公开(公告)号：JP2004310121A

公开(公告)日：2004-11-04

申请号：JP2004145260

申请日：2004-05-14

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YAMACHIKA MIKIO ,  NICHIMA YUKITOMO ,  KOBAYASHI YASUTAKA ,  TSUJI AKIRA

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive or negative chemically amplified radiation-sensitive resin composition for exposure by a KrF excimer laser or an ArF excimer laser, the composition which can accurately reproduce a fine resist pattern even on a substrate having a high reflectance such as an aluminum substrate and which has excellent storage stability.
SOLUTION: The positive chemically amplified radiation-sensitive resin composition contains (1) (a) a resin containing an acid dissociating group and (b) a radiation-sensitive acid generating agent, or (2) (a) an alkali-soluble resin, (b) a radiation-sensitive acid generating agent and (c) a solubility controlling agent. The negative chemically amplified radiation-sensitive resin composition contains (3) (a) an alkali-soluble resin, (b) a radiation-sensitive acid generating agent and (c) a crosslinking agent. Each resin composition further contains an anthracene derivative represented by anthracene-9-methanol.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004191386A

公开(公告)日：2004-07-08

申请号：JP2002325402

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  KONNO KEIJI ,  KOBAYASHI YASUTAKA ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08L83/02 ,  C08L83/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability for obtaining a resist underlayer film which ensures no resist peeling, improves pattern reproducibility, and has alkali resistance and resistance to oxygen ashing in resist removal when disposed under a resist. SOLUTION: The composition for a resist underlayer film comprises (A) a hydrolysis-condensation product of an alkoxysilane mixture including a compound represented by the formula (1): Si(OR 2 ) 4 and a compound represented by the formula (2): R 1 n Si(OR 2 ) 4-n and (B) a hydrolysis-condensation product of at least a compound represented by the above formula (2). In the formula (1), symbols R 2 may be the same or different and each represents a monovalent organic group. In the formula (2), symbols R 1 may be the same or different and each represents a monovalent organic group or H; symbols R 2 may be the same or different and each represents a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2002207295A

公开(公告)日：2002-07-26

申请号：JP2001341740

申请日：2001-11-07

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  KAWAGUCHI KAZUO ,  TANAKA MASATO ,  KOBAYASHI YASUTAKA ,  HAYASHI AKIHIRO ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI

IPC: G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film having preferable gas permeability, excellent adhesiveness with a resist film and excellent durability against a developer for the development of the resist film and to provide the resist lower layer film and a method of manufacturing the film. SOLUTION: The composition for a resist lower layer film contains a film forming component consisting of a hydrolyzed product and/or condensed product of a specified silane compound and contains a heat volatile substance which is gasified by heating. When the composition is heated, the film forming component is hardened while the heat volatile substance is gasified to form a porous silica film. The heat volatile substance preferably has 200 to 450 deg.C boiling point or decomposition temperature. The density of the resist lower film to be formed is preferably 0.7 to 1.8 g/cm3. The resist lower film is formed by heating the thin film of the above composition at a temperature equal to or higher than the boiling point or the decomposition temperature of the heat volatile substance.

公开(公告)号：JP2002207296A

公开(公告)日：2002-07-26

申请号：JP2001341741

申请日：2001-11-07

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  KAWAGUCHI KAZUO ,  TANAKA MASATO ,  KOBAYASHI YASUTAKA ,  HAYASHI AKIHIRO ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI

IPC: G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film having preferable gas permeability, excellent adhesiveness with a resist film and excellent durability against a developer for the development of the resist film and to provide a method for manufacturing the composition, the resist lower layer film and a method for manufacturing the film. SOLUTION: The composition for a resist lower layer film contains a film forming component consisting of a specified silane compound and a hydrolyzed product and/or condensed product of anther specified silane compound containing heat decomposable organic groups. When the composition is heated, the film forming component is hardened while the heat decomposable organic groups produce gas to form a porous silica film. The decomposition temperature of the heat decomposable organic groups is preferably 200 to 400 deg.C. The density of the resist lower film to be formed is preferably 0.7 to 1.8 g/cm3. The resist lower film is formed by heating the thin film of the above composition at a temperature equal to or higher than the decomposition temperature of the heat decomposable organic groups.