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公开(公告)号：JP2005146308A
公开(公告)日：2005-06-09
申请号：JP2003382343
申请日：2003-11-12
Inventor： YOKOYAMA YASUAKI , YONEKURA ISAMU , OKADA SACHIKO , SAKAI TATSUYA , MATSUKI YASUO
IPC: B32B15/01 , C23C18/08 , C23C18/10 , C23C18/14 , H01L21/288 , H01L21/3205 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide an electroconductive laminated film which is simply and inexpensively usable for the electric wiring and electrode of many electron devices, and to provide a forming method therefor.
SOLUTION: The electroconductive laminated film is made of layered metallic aluminum films and ruthenium-containing electroconductive films. The electroconductive laminated film is formed by forming the electroconductive film by applying an organometal complex of ruthenium onto a substrate and subsequently heat-treating it, and forming the metallic aluminum film through applying the complex of an amine compound and an alane onto the electroconductive film and subsequently heating and/or optically treating it, or by sputtering or vapor-depositing aluminum.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种简单廉价地用于许多电子器件的电线和电极的导电层压膜，并提供其形成方法。 解决方案：导电层压膜由层状金属铝膜和含钌导电膜制成。 导电性层叠膜通过将钌的有机金属配合物涂布在基材上并随后进行热处理而形成导电膜而形成，并通过将胺化合物和丙烯的配合物涂布在导电膜上而形成金属铝膜， 随后加热和/或光学处理，或通过溅射或气相沉积铝。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2005139090A
公开(公告)日：2005-06-02
申请号：JP2003375241
申请日：2003-11-05
Inventor： SAKAI TATSUYA , YONEKURA ISAMU , YOKOYAMA YASUAKI , MATSUKI YASUO
Abstract: PROBLEM TO BE SOLVED: To provide a tungsten compound which can give good filmy metal tungsten in a safe process, can easily be handled in air, and is used for chemical gas phase growth, and to provide a method for producing a metal tungsten film from the same.
SOLUTION: This tungsten compound represented by formula (1): W(RCN)
n (CO)
6-n [R is a 1 to 10C hydrocarbon group or a 1 to 10C halogenated hydrocarbon group; (n) is an integer of 0 to 6, wherein a plurality of R groups may be identical to or different from each other, when (n) is an integer of 2 to 6], and the method for producing the metal tungsten film from the tungsten compound by a chemical gas phase growth method.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：为了提供在安全的工艺中可以得到良好的金属钨的钨化合物，可以容易地在空气中处理，并且用于化学气相生长，并且提供一种生产金属的方法 钨膜从同一个。 ＆lt; P＆gt;解决方案：由式（1）表示的钨化合物：W（RCN）（CO）6-n [R是1至10个烃基或 1〜10个卤代烃基; （n）为0〜6的整数，其中，当（n）为2〜6的整数时，多个R基彼此可以相同或不同，所述金属钨膜的制造方法为 钨化合物通过化学气相生长法。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004273597A
公开(公告)日：2004-09-30
申请号：JP2003059542
申请日：2003-03-06
Inventor： YOKOYAMA YASUAKI , BESSHO NOBUO
IPC: H01L21/304 , H01L21/301
Abstract: PROBLEM TO BE SOLVED: To provide a process for machining a wafer in which the wafer is held tightly on a substrate when the surface of the wafer is polished, elements on the surface are not broken when the rear surface is processed, the wafer being processed can be stripped easily, a fixing agent layer adhering to the wafer can be removed and/or cleaned easily, and the wafer being processed can be protected against fracture and/or deformation. SOLUTION: A wafer is pasted to a substrate by heating a wafer fixing agent containing a compound having liquid crystal properties at a temperature not lower than the melting point of the compound. After the non-pasting surface is polished and before the wafer is stripped from the substrate, a dicing tape is pasted to the polished surface. Subsequently, the wafer fixing agent is heated at a temperature not lower than the melting point of the compound and the polished wafer is removed from the substrate together with the dicing tape. Finally, the wafer fixing agent is cleaned and the wafer pasted with the dicing tape is diced. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2004177772A
公开(公告)日：2004-06-24
申请号：JP2002345526
申请日：2002-11-28
Inventor： YASUDA YOSHITOMO , YOKOYAMA YASUAKI , BESSHO NOBUO
Abstract: PROBLEM TO BE SOLVED: To provide a novel photosetting composition which can be cured by light of a wide range of wavelength regions including UV light or visible light, is high in sensitivity, can make sufficient curing obtainable with little exposure, can adequately form minute patterns when used as a resist, and forms cured matter having excellent heat resistance and insulation characteristics, and a negative photoresist composition using the same.
SOLUTION: The photosetting composition contains (A): a carbon cluster having a photosensitizing effect and/or its derivative, (B): a compound having a plurality of heterocycles within the molecule, and if necessary, (C): a non-photosensitive resin. Also, the composition preferably contains a compound having a siloxane bond within the molecule. The photosetting composition which is adequately usable as the negative photoresist composition, can form the minute patterns with high sensitivity characteristics and can manufacture a cured film having excellent heat resistance, chemical resistance and insulation characteristics is obtained. If such photosetting composition is used, the manufacture of semiconductor elements, liquid crystal elements, etc., and the manufacture of photosensitive insulating films usable in the field of packaging of the respective elements with a little heat history/photoirradiation history are made possible.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2002087809A
公开(公告)日：2002-03-27
申请号：JP2000275233
申请日：2000-09-11
Applicant: JSR CORP , SEIKO EPSON CORP
Inventor： MATSUKI YASUO , YOKOYAMA YASUAKI , TAKEUCHI YASUMASA , FURUSAWA MASAHIRO , YUDASAKA KAZUO , MIYASHITA SATORU , SHIMODA TATSUYA
IPC: C01B33/02 , C23C16/24 , H01L21/205
Abstract: PROBLEM TO BE SOLVED: To provide a method of depositing a silicon film on a base body at a high yield and depositing rate with a simple operation or a device difference from the CVD process or a plasma CVD process. SOLUTION: The silicon film is deposited on the base body by thermally decomposing a silicon compound of at least one kind selected from a group composed of cyclopentasilane and silylcyclopentasilane in the presence of inert organic medium vapor under the atmospheric pressure.
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Patent Agency Ranking
公开(公告)号：JP2000066211A
公开(公告)日：2000-03-03
申请号：JP22934699
申请日：1999-08-13
Applicant: JSR CORP
Inventor： NISHIKAWA MICHINORI , MIYAMOTO TAKESHI , SANO KIMIYASU , YOKOYAMA YASUAKI
IPC: G02F1/1337 , C08G73/10 , C08L79/08
Abstract: PROBLEM TO BE SOLVED: To provide a new liquid crystal alignment agent which can form a liquid crystal alignment layer for excellently aligning a liquid crystal by incorporating a soluble polyimide having a specified structural unit. SOLUTION: This liquid crystal alignment agent contains a soluble polyimide having the structural unit expressed by formula I. The structural unit expressed by formula I is produced by the reaction of tetracarboxylic acid dianhydride expressed by formula II and 4,4'-diaminodiphenylmethane as the starting material. The reaction of the tetracarboxylic acid dianhydride expressed by formula II and 4,4'-diaminodiphenylmethane is carried out by bringing the both compds. into contact with an org. solvent to produce polyamic acid, and then heating the polyamic acid as produced in the org. solvent or treating in the presence of a dehydrating agent and basic catalyst to imidize. In the formula, R1 is a fluorine atom or univalent org. group and a is an integer 0 to 4.
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公开(公告)号：JP2000001614A
公开(公告)日：2000-01-07
申请号：JP10471299
申请日：1999-04-13
Applicant: JSR CORP
Inventor： NISHIKAWA MICHINORI , MIYAMOTO TAKESHI , SANO KIMIYASU , YOKOYAMA YASUAKI
IPC: G02F1/1337 , C08G73/10 , C08L79/08
Abstract: PROBLEM TO BE SOLVED: To obtain a liquid crystal orientating agent useful for providing a liquid crystal orientated film for a liquid crystal display element having a TN type sequence cell by including a specific soluble polyimide. SOLUTION: This liquid crystal orientating agent contains a soluble polyimide having a structural unit of formula I (R1 is a bifunctional organic group; R2 is fluorine or a monofunctional organic group; (a) is 0-2). The structural unit of formula I is obtained by bringing preferably 0.6-2.4 mols of a tetracarboxylic acid dianhydride of formula II into contact with 1 mol of a diamine compound of the formula H2N-R1-NH2 (e.g. paraphenylenediamine or the like) in an organic solvent preferably at 0-100 deg.C to form a polyamic acid and then heating the formed polyamic acid in an organic solvent preferably at 100-170 deg.C or imidating the polyamic acid in the presence of both a dehydrating agent (e.g. acetic anhydride or the like) and a basic catalyst (e.g. pyridine or the like) preferably at 60-150 deg.C.
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公开(公告)号：JP2004273723A
公开(公告)日：2004-09-30
申请号：JP2003061793
申请日：2003-03-07
Inventor： YOKOYAMA YASUAKI , BESSHO NOBUO
IPC: H01L21/683 , H01L21/304 , H01L21/68
Abstract: PROBLEM TO BE SOLVED: To provide a method for carrying a wafer in which the wafer is held tightly on organic polymer after the surface thereof is polished, especially when the polished wafer is thin, so that an element on the surface is not broken and the wafer is protected against fracture and/or deformation. SOLUTION: After a silicon wafer is polished while being held tightly on a substrate, e.g. a hard plate and/or a resilient carrier (backing material) and/or a wafer, using a wafer fixing agent containing a compound having liquid crystal properties and after or before the processed surface is cleaned, an organic polymer film is pasted to the polished surface, the substrate is heated at a temperature not lower than the melting point of the compound having liquid crystal properties, the wafer pasted with the organic polymer film is removed together with the organic polymer film and then transferred to a different place. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2004115682A
公开(公告)日：2004-04-15
申请号：JP2002282307
申请日：2002-09-27
Inventor： BESSHO NOBUO , YOKOYAMA YASUAKI
IPC: C09J5/00 , C09J5/06 , C09J11/06 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a fixing agent capable of strongly fixing one solid material to the other solid material and of separating easily the solid materials from each other after fixing, and also to provide a method for fixing and separating the solid materials using the fixing agent.
SOLUTION: The fixing agent comprises a liquid crystal compound. The fixing method comprises (1) locating the fixing agent between one solid material and the other solid material and (2) melting the fixing agent by heating to fix the one solid material to the other solid material. The separation method comprises separating the two solid materials fixed by the above method under a temperature higher than the melting point of the fixing agent.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2004006197A
公开(公告)日：2004-01-08
申请号：JP2002211236
申请日：2002-07-19
Applicant: JSR CORP , SHARP KK , KOKUSAI KIBAN ZAIRYO KENKYUSHO
Inventor： YOKOYAMA YASUAKI , MATSUKI YASUO , SAKONO IKUO , KOBAYASHI KAZUKI , TAKEUCHI YASUMASA
IPC: C23C18/08 , C23C18/10 , C23C18/14 , C23C18/16 , H01B5/14 , H01B13/00 , H01J9/02 , H01L21/288 , H01L21/768 , H01L23/498 , H05K3/10 , H05K3/24
Abstract: PROBLEM TO BE SOLVED: To provide a conductive film forming composition capable of easily forming a wire or an electrode suitably usable for a lot of electronic devices at low costs, to provide a film forming method using it, to provide a conductive film formed by the forming method, and to provide the wire or the electrode formed of the film. SOLUTION: This conductive film forming composition containing a complex of an amine compound and aluminum hydride, and an organic solvent is prepared. By applying it to a substrate and by heat-treating it and/or irradiating it with light, this conductive film, for instance, the electrode or the wire is manufactured. COPYRIGHT: (C)2004,JPO
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