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公开(公告)号：JPH1197423A
公开(公告)日：1999-04-09
申请号：JP25683597
申请日：1997-09-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , OKA NAOMASA , NAKAMURA TAKURO , ISHIDA TAKUO , YOSHIDA HITOSHI
IPC: G01P15/12 , H01L21/302 , H01L21/3065 , H01L41/08 , H01L49/00
Abstract: PROBLEM TO BE SOLVED: To make it possible to suppress the formation of an inverted layer by automatic doping and diffusion of impurities into an epitaxial layer. SOLUTION: A field oxide film 2 is formed on an n-type silicon substrate 1. With photoresist which is patterned in the specified shape as a mask, an opening part 2a is formed by etching the field oxide film 2. The photoresist is removed. Then, with the field oxide film 2 wherein the opening part 2a is formed as a mask, p-type impurities are deposited. A p+ type embedded sacrifice layer 3 is formed by performing thermal diffusion in nitrogen atmosphere. Then, a silicon oxide film 4 is formed at the formed part of the opening part 2a by performing wet oxidation or pyrogenic oxidation. Then, the field oxide film 2 and the silicon oxide film 4 are completely etched and removed along the entire surface. An n-type epitaxial layer 5 is deposited on the formed side of the p+ type embedded sacrifice layer 3 of the silicon substrate 1. At this time, p-type impurities are diffused from the p+ type embedded sacrifice layer 3 through the interface with the silicon substrate 1, and a final p-type embedded sacrifice layer 6 is formed.
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公开(公告)号：JPH10242453A
公开(公告)日：1998-09-11
申请号：JP4359397
申请日：1997-02-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMII KAZUYUKI , SUGIURA YOSHIYUKI , NAGAHAMA HIDEO , HAGIWARA YOSUKE
IPC: H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device with no lowered breakdown voltage between drain sources even in the case of wiring a high-potential drain electrode over an element separation region. SOLUTION: An n+ type drain region 5 is formed approximately in the center inside an element formation region 4, a p-type channel region 6 excepting the lower part of a drain electrode 12 and its neighborhood in contact with a p+ type element separation region 3 so as to enclose an n+ type drain region 5 inside the element formation region 4, and an n+ type source region 7 is formed for being involved inside the p-type channel region 6 and the p+ type element separation region. A p-type impurity region 8 is formed between the p-type channel region and the n+ type drain region, and inside the element formation region 4 under the drain electrode 12 and its neighborhood, and a conductor layer 14 is formed inside an insulation layer 11 on the p-type impurity layer 8. Then, a capacitive coupling formed by the lower part of the drain electrode 12 and the conductor layer 14 of its neiborhood is made shifted approximately to the center layer 14.
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公开(公告)号：JP2002219694A
公开(公告)日：2002-08-06
申请号：JP2001013656
申请日：2001-01-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAWADA HIROSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI , SAITO KIMIAKI
Abstract: PROBLEM TO BE SOLVED: To allow a moving element to be displaceably without being inclined, and reduce electric power consumption compared with that in the prior art. SOLUTION: A pressing part 32 is arranged to be displaceably thickness- directionally inside the second frame part 31 of a rectangular frame shape. The pressing part 32 is connected to the second frame part 31 via one arm piece 33 for displacing thickness-directionally the pressing part 32 by thermal expansion and shrinkage. The arm piece 33 has a flexible part 38 wherein a flexible layer 37 is layered with a flexible layer 36, and a flexible layer 38 is deflected by heating accompanied to electrification to the flexible layer 37 to displace the pressing part 32. The first frame part 21 of a rectangular shape is joined to the second frame part 31. The needle 22 displaced thickness- directionally is arranged inside the first member 21. The needle 22 is connected to the first frame part 21 by two connection pieces 23. A supporting part is constituted of the first frame part 21 and the second frame part 31.
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公开(公告)号：JP2001304454A
公开(公告)日：2001-10-31
申请号：JP2000128112
申请日：2000-04-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YOSHIDA HITOSHI , TOMONARI SHIGEAKI , KAWADA HIROSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , KAWAHITO KEIKO , TOYODA KENJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-valve of normally open type capable of securing accurately the gap between the micro-valve base part and a valve element through a simple procedure without any complicated process which requires accuracy. SOLUTION: The semiconductor micro-valve 60 of normally open type is formed by joining together a second base board 50 having a through hole 51 in a specified position, valve element 5 to open and close the hole 51 formed from a silicon substrate and a first base substrate 1 to make displacement with changing temperature and form a flexible region 2 to displace the valve element and a frame part 3 supporting the flexible region 2, wherein the first substrate 1 and second substrate 50 are joined together through a spacer layer 53 of 10-30 μm thick.
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公开(公告)号：JP2001235056A
公开(公告)日：2001-08-31
申请号：JP2000047342
申请日：2000-02-24
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOYODA KENJI
Abstract: PROBLEM TO BE SOLVED: To provide a micro valve that has desirable sealing performance. SOLUTION: The micro valve has a valve seat 3 and a valve element 4 opposed to the valve seat, and controls the flow of a fluid by opening and closing the opening between the valve seat and the valve element via displacement of the valve element. At least either of the valve seat and the valve element has a plurality of projecting shapes. The projecting shapes are triangular or rectangular. Alternatively, both valve seat and valve element have a plurality of such projecting shapes so that the projecting shapes of the valve seat and those of the valve element can fit with each other, and gaps are defined in the fitting region.
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Patent Agency Ranking
公开(公告)号：JP2001150393A
公开(公告)日：2001-06-05
申请号：JP33506199
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO KIMIAKI , KATAYAMA HIRONORI , TOYODA KENJI , FUJII KEIKO , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a compact semiconductor micro-actuator capable of being driven with low power consumption. SOLUTION: An end part of each flexible part 3 connected to a frame body 6 through a first connecting part 11 at the other end, is connected to a movable element 4 through a second connecting part 12. When each flexible part 3 is heated, it is deflected by the difference in the coefficients of thermal expansion between the flexible part 3 and a thin film 5, whereby displacing the movable element 4. A distance to a valve seat 7a is changed by the displacement of the movable element 4, and a flow rate of the fluid flowing in a through hole 7 is controlled. The connecting part 11 for connecting the flexible part 3 and the movable element 4 has the flexural rigidity lower than that of the second connecting part 12 for connecting the frame body 6 and the flexible part 3.
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公开(公告)号：JP2001150391A
公开(公告)日：2001-06-05
申请号：JP33355499
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO KIMIAKI , KATAYAMA HIRONORI , TOYODA KENJI , FUJII KEIKO , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-actuator capable of being driven by low power. SOLUTION: This semiconductor micro-actuator is composed of a first base 1 having a through-hole 10 on a predetermined position, a valve element 11 mounted on a position corresponding to the through-hole 10, an flexible part 3 formed by bonding a thin film part 6 and a metallic thin film 7 made of two kinds of materials different in coefficients of thermal expansion, and displacing by the heat generation caused by the electric action as a driving source, and a second base 2 provided with the valve element 11 connected to a frame part 5 through the flexible part 3, and bonded to the first base 1. The thin film part 6 and the metallic thin film 7 forming the flexible part 3 are provided with a clearance 8 for dividing the thin film part 6 and the metallic thin film 7 into two areas in the direction approximately perpendicular to the direction connecting the valve element 11 and the frame part 5.
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公开(公告)号：JP2000309000A
公开(公告)日：2000-11-07
申请号：JP2000034077
申请日：2000-02-10
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , OGIWARA ATSUSHI , NAGAO SHUICHI , KAMAKURA MASAARI , SAITO KIMIAKI , NOBUTOKI KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that is low in electric power consumption and simple in manufacture, a semiconductor micro-actuator, semiconductor micro-valve and semiconductor micro-relay that use the above device, and a manufacturing method of semiconductor devices and a manufacturing method of semiconductor micro- actuators. SOLUTION: Flexible regions 2 are each connected at one end to a semiconductor board 3 as a frame via a heat insulating region 7, and at the other to a movable element 5. Each heat insulating region 7 consists of a heat insulating material of such a resin as a polyimide and a fluorine-contained resin. Each flexible region 2 is constituted of a thin portion 2S and a thin film 2M differing in the coefficient of thermal expansion. When a diffused resistor 6 formed on the obverse side of each thin portion 2S is heated up, the differential thermal expansion between the thin portion 2S and the thin film 2M displaces the flexible region 2 with the result that the movable element 5 is displaced relative to the semiconductor board 3.
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公开(公告)号：JP2000243198A
公开(公告)日：2000-09-08
申请号：JP4559199
申请日：1999-02-23
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAMAKURA MASAARI , KAWADA HIROSHI
IPC: H01H37/52
Abstract: PROBLEM TO BE SOLVED: To realize size reduction, increase the speed of response, enhance work accuracy, and accurately control working temperatures. SOLUTION: This switch has a fixed substrate 10 made of silicon equipped with fixed contacts 11a, 11b and a support substrate 20 made of silicon equipped with a movable contact 23, A movable piece 22 is formed on the support substrate 20, and the movable contact 23 is installed on an end face of a contact hold part 22 provided on an end part of the movable piece 22. A bimetallic element film 24 or a metallic thin film of aluminum is layered on the movable piece 22, and when the ambient temperature varies, the movable piece 22 is deflected by a difference in coefficients of thermal expansion between the movable piece 22 and the bimetallic element film 24, and the movable contact 23 makes contact with and parts from the fixed contacts 11a, 11b.
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公开(公告)号：JPH10242455A
公开(公告)日：1998-09-11
申请号：JP4513997
申请日：1997-02-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUGIURA YOSHIYUKI , HAGIWARA YOSUKE , KAMAKURA MASAARI
IPC: H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having no lowering of breakdown voltage between a drain and a source, even in the case of wiring a high-potential drain electrode over an element separation region. SOLUTION: An n+ type drain region 5 is formed approximately in the center inside an element formation region 4, a p-type channel region 6 is formed inside the element formation region 4 explusive of a lower part of a drain electrode 11 and its neighborhood in contact with a p+ type element separation region 3 so as to enclose the n+ type drain region 5, and an n+ type drain region 5, and an n+ type source region 7 is formed inside an element formation region 4 so as to be involved inside the p-type channel region 6 and the p+ type element separation region 3. In the lower part of the drain electrode 11 and in an insulating layer 10 in its neighborhood, an electrode 13 of the long shape is formed approximately in the vertical direction with respect to the longitudinal direction of the drain electrode 11 for being connected to the element formation region 4 through an n+ type impurity region 14.
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