公开(公告)号：JPH11317511A

公开(公告)日：1999-11-16

申请号：JP12462298

申请日：1998-05-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OTAGAKI TOMOKO ,  SANO YOSHIKAZU ,  ICHIKAWA MICHIYO ,  TSUKAMOTO AKIRA ,  TERAKAWA SUMIO ,  WATANABE HISASHI ,  SHIMOMURA KOJI ,  OKUDA YOSHIMITSU

IPC: H01L27/14 ,  H04N5/335 ,  H04N5/365 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

Abstract: PROBLEM TO BE SOLVED: To restrain lenses from coming into contact with each other so as not to be deformed, by a method wherein a synthetic resin layer is divided into synthetic resin parts corresponding to photodetective parts, and the synthetic resin parts are partially heated together with a covering overcoat layer to transform the synthetic resin parts into the shapes of convex lenses for the formation of micro lenses. SOLUTION: First, a flattened layer 2 is spin-coated with a synthetic resin layer 21 which serves as a micro lens material. Then, the synthetic resin layer 21 is patterned with an ultraviolet stepper 23 to be divided into synthetic resin parts 22 which correspond to photodetective parts in a one-to-one correspondence. Furthermore, the divided synthetic resin parts 22 are breached. Thereafter, the synthetic resin parts 22 which are each rectangular in cross section are covered with an overcoat layer 25 by spin-coating or the like. The synthetic resin parts 22 coated with the overcoat layer 25 are heated to be softened, whereby the resin parts 22 are transformed into domed lenses which are convex in cross section. The overcoat layer 25 is formed when the resin parts 22 are transformed, so that the synthetic resin parts 22 are hardly brought into contact with each other.

公开(公告)号：JPH08304297A

公开(公告)日：1996-11-22

申请号：JP10497495

申请日：1995-04-28

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： SUGIURA EMIKO ,  WATANABE HISASHI

IPC: G01N21/88 ,  G01N21/956 ,  G03F1/84 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PURPOSE: To detect the defect of a mask stably through inspection of a transferred resist pattern by transferring the pattern using a negative resist. CONSTITUTION: A negative resist 7 is employed in an existing equipment for detecting the defect of a wafer pattern, and the defect of mask is inspected using a resist pattern transferred with lower quantity of exposure than an appropriate level. Since a signal from a pattern being transferred using a positive resist 3 contains only a weak signal from the bottom part of resist, presence of a signal from the end part of resist can not be determined and thereby a decision can not be made whether the hole pattern is detective or not. When the pattern is transferred using a negative resist 7, detection light from the end part and surface of the resist 7 and from the surface of a substrate 8 has sufficiently high reflection intensity and the profile of transfer pattern can be detected sufficiently. With such method, the defect of a mask can be detected stably by inspecting a transferred resist pattern.

公开(公告)号：JP2548268B2

公开(公告)日：1996-10-30

申请号：JP809988

申请日：1988-01-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/26 ,  G03C1/00 ,  G03C5/00 ,  G03C5/16 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JP2506801B2

公开(公告)日：1996-06-12

申请号：JP19296687

申请日：1987-07-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/027 ,  H01L21/30 ,  H01L21/3205 ,  H01L23/52

公开(公告)号：JPH0644551B2

公开(公告)日：1994-06-08

申请号：JP17796185

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027

公开(公告)号：JPH04218046A

公开(公告)日：1992-08-07

申请号：JP9388991

申请日：1991-04-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To allow the stable and accurate transfer of fine patterns approximate to the resolution limit by forming a phase shift mask having high stability by one time of pattern exposing and using such photomask. CONSTITUTION:The transmission type phase shift mask is formed so as to apply a phase difference between the light passing through the pattern of the phase shifters 2 and the light passing a photomask 2. The light transmitted through the phase shifters 2 is given the phase difference from 90 deg. to 270 deg.. Such phase difference can be controlled by the film thickness of the phase shifters 2. The phase shifters 2 are most preferably set at such a film thickness at which the phase difference attains 180 deg. (pi) from the distribution state of the light intensity transferred by the exposing.

公开(公告)号：JPH0487146A

公开(公告)日：1992-03-19

申请号：JP19944990

申请日：1990-07-27

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: C23F1/26 ,  H01J37/06

Abstract: PURPOSE:To improve the work efficiency of cleaning and eliminate damage to the Wehnelt itself by composing solution for removing deposited matter from an electron gun of a Wehnelt for a tungsten electron gun including hydrogen peroxide. CONSTITUTION:Properties expected of wet etching liquid shall preferably be dissolving only deposited matter without giving effects on the main body of a Wehnelt, being a solution having little risk which can be handled easily, and being easy to acquire and store. For a solution satisfying these conditions, hydrogen peroxide (H2O2) is used for cleaning solution for a Wehnelt for a tungsten electron gun, and water solution of tetramethyl ammonium hydroxide (TMAH) is used for cleaning solution for a Wehnelt for an LaB6 electron gun in cleaning. Deposited matter can thus be removed easily without effecting the Wehnelt 8.

公开(公告)号：JPH03242648A

公开(公告)日：1991-10-29

申请号：JP4000690

申请日：1990-02-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/29 ,  G03F1/68 ,  G03F1/70 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To regulate patternwise exposure to only once at the time of forming a mask to eliminate registering error and to enable a fine pattern to be stably transferred in high precision by forming on a phase shift layer a light shielding film smaller in width than the layer. CONSTITUTION:This photomask is formed by successively laminating on the whole surface of a transparent substrate 1 the phase shift layer 3 and the light shielding film 2 smaller in width than the layer 3 and a resist 4, then, exposing it to light passed through a prescribed pattern, followed by developing it to form a resist pattern, using its pattern as a mask, successively etching the film 2, and the layer 3, performing side etching the layer 3, and removing the resist 4. It is preferred to form the film 2 in the prescribed region of the sub strate 1 and to form the layer 3 between the film 2 and thus to form the mask.

公开(公告)号：JPH03230165A

公开(公告)日：1991-10-14

申请号：JP2542690

申请日：1990-02-05

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/32 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enhance operation safety at the time of using an organic developing solution and to enable a good pattern to be formed even in a small exposure amount. CONSTITUTION:The surface of a Si substrate 1 is coated with a radiation- decomposable resist of polymethyl methacrylate 2 in a thickness of 1 mum, and undergoes heat treatment at a temperature of 200 deg.C, then, electron beam exposure treatment having a prescribed pattern in an exposure amount of 30muC/cm , and the exposed resist film 2 is immersed into an aqueous solution of acetic acid 5 in a developing bath 4 to dissolve only the exposed parts of the resist film 2 and thus to obtain the resist pattern 6.

公开(公告)号：JPH02301764A

公开(公告)日：1990-12-13

申请号：JP12139489

申请日：1989-05-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To realize the decrease of a proximity effect by a single electron beam exposure without using an exposure correction executed by a computer by applying an ultraviolet ray absorbing film by which an ultraviolet ray absorption is increased by irradiating with an electron beam, and executing a full exposure by ultraviolet rays after the electron beam exposure. CONSTITUTION:On the surface of an Si substrate 1, a thin film of PMMA (poly methyl methacrylate) is applied to film thickness of 0.5mum as an electron beam resist 2, and a heat treatment is executed at a temperature of 170 deg.C for 30 minutes. Subsequently, dialkyl-phenacyl sulbonium salt is applied to film thickness of 0.2mum as an ultraviolet ray absorbing film 3, and by performing a heat treatment at a temperature of 80 deg.C for 30 minutes, a resist film of a double-layer structure is formed. This resist film is brought to exposure of an electron beam 4 by 80muC/cm exposure quantity, and thereafter, by using a light source of ultraviolet rays 5 of 250nm center wavelength, an ultraviolet ray full irradiation is executed by 200mJ/cm exposure quantity. In such a way, the decrease of a proximity effect can be realized by a single electron beam exposure without using an exposure correction executed by a computer.