公开(公告)号：DE69131658D1

公开(公告)日：1999-11-04

申请号：DE69131658

申请日：1991-06-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/075 ,  C08L83/04

Abstract: The present invention provides a composition having sensitivity to light or radiation. The composition comprises a polymer having a siloxane-bond structure which undergoes polymerization reaction when irridiated with light or radiation, and a sensitizing agent. The present invention also provides a process for forming a pattern, preparing a photomask and a semiconductor device by using the composition of the present invention.

公开(公告)号：DE69131497D1

公开(公告)日：1999-09-09

申请号：DE69131497

申请日：1991-06-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/00 ,  G03F1/26 ,  G03F1/28 ,  G03F1/34 ,  G03F7/20 ,  G03F1/14

Abstract: A photomask used by photolithography and a process for producing same which allows a single exposure to make a photomask, thereby simplifying the photomask making process, and facilitating the inspection and correction of photomasks. In addition, the phase shifter using a slanting pattern prevents a pattern from being formed outside a predetermined area. The use of a phase shifter which does not resolve under an optical projection system shields a large size area against an irradiated light, thereby allowing the formation of fine, intricate patterns suitable for use in LSIs.

公开(公告)号：DE69131497T2

公开(公告)日：2000-03-30

申请号：DE69131497

申请日：1991-06-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/00 ,  G03F1/26 ,  G03F1/28 ,  G03F1/34 ,  G03F7/20 ,  G03F1/14

Abstract: A photomask used by photolithography and a process for producing same which allows a single exposure to make a photomask, thereby simplifying the photomask making process, and facilitating the inspection and correction of photomasks. In addition, the phase shifter using a slanting pattern prevents a pattern from being formed outside a predetermined area. The use of a phase shifter which does not resolve under an optical projection system shields a large size area against an irradiated light, thereby allowing the formation of fine, intricate patterns suitable for use in LSIs.

公开(公告)号：DE69131658T2

公开(公告)日：2000-04-27

申请号：DE69131658

申请日：1991-06-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/075 ,  C08L83/04

Abstract: The present invention provides a composition having sensitivity to light or radiation. The composition comprises a polymer having a siloxane-bond structure which undergoes polymerization reaction when irridiated with light or radiation, and a sensitizing agent. The present invention also provides a process for forming a pattern, preparing a photomask and a semiconductor device by using the composition of the present invention.

公开(公告)号：JP2583986B2

公开(公告)日：1997-02-19

申请号：JP17956988

申请日：1988-07-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JPH0619119A

公开(公告)日：1994-01-28

申请号：JP17403292

申请日：1992-07-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G01N21/88 ,  G01N21/956 ,  G03F1/84 ,  H01L21/027 ,  H01L21/30 ,  H01L21/66 ,  G03F1/08

Abstract: PURPOSE:To enhance the accuracy of inspecting the transparent defect on a photomask to be used in photolithography. CONSTITUTION:This inspection device of a chip comparison type for photomask defects is constituted to compare the difference in the pattern between two chips having the same pattern on the photomask 5 and to recognize the part where the patterns vary between both as a defect if there is such part. The prescribed positions of the photomask 5 on a sample base 6 are irradiated with two beams of the partially coherent light from a light source unit 1 constituted of a mercury lamb, a wavelength selection filter 2 and a condenser lens 3. The sample base 6 is positioned by a laser interferometer and can be moved with high accuracy. The light transmitted through the photomask 5 is condensed through an objective lens 7 and forms the image of the photomask pattern on a solid-state image pickup device (CCD) 9.

公开(公告)号：JPH03142918A

公开(公告)日：1991-06-18

申请号：JP27990089

申请日：1989-10-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/38 ,  H01L21/027

Abstract: PURPOSE:To make it possible to form a good resist pattern even in the case a thick resist film is used by a method wherein after an exposure of a prescribed pattern is performed on the resist containing an alkali soluble resin, a dissolution inhibitor and an acid generator, ultra-violet rays are irradiated on the whole surface of the resist. CONSTITUTION:A resist (1) 2 consisting of an alkali soluble resin, a dissolution inhibitor and an acid generator is applied on an Si substrate 1 in a prescribed thickness and a heat treatment is performed. Then, an electron beam exposure treatment is performed, subsequently far ultraviolet rays 4 from a low-pressure mercury-arc lamp are exposed on the whole surface of the resist and after a heat treatment is performed, an unexposed part only in the resist film is dissolved. Via this process, a line and space pattern having almost vertical sidewalls can be formed. On the other hand, in the case the entire surface irradiation of far ultraviolet rays is not performed, a resist pattern is formed into a triangle. Thereby, even in the case a thick resist film is used, a good resist pattern 5 can be formed.

公开(公告)号：JPS6237928A

公开(公告)日：1987-02-18

申请号：JP17796285

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI ,  TAKASU YASUHIRO ,  YAMASHITA HIROSHI

IPC: H01L21/28

Abstract: PURPOSE:To form easily a fine metal electrode by applying a lift-off method, by irradiating with the plasma containing F or Cl the resist pattern on a substrate, until the amount of resist film reduction reaches the predefined value. CONSTITUTION:A resist pattern 2 is formed on a substrate 1. The plasma irradiation containing F or Cl is continued until the amount of resist film reduction becomes less than 0.1mum. A metal 4 is deposited and a metal electrode 4 is formed by a lift-off method. Thus the heat resistance of pattern 2 increases as compared with the cose where the plasma containing F or Cl is not made to irradiate. Thereby a fine metal electrode is easily formed by the lift-off method.

公开(公告)号：JP2001007018A

公开(公告)日：2001-01-12

申请号：JP2000106116

申请日：2000-04-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： SAITO TAKU ,  WATANABE HISASHI

IPC: G03F7/20 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a resist pattern having a prescribed shape by preventing the deformation of the resist pattern, caused by connection errors between partial exposure regions when a charged particle beam is used. SOLUTION: First, design data corresponding to a designed pattern are divided into a first stripe region group 61 composed of three stripe regions 61a-61c in a data arrange region 10. Then, the design data in matching with one of the stripe regions 61a-61c are extracted from a plurality of design data as a first design data group, and the group is prepared as first lithography pattern data. Then design data which spread over a plurality of regions of the first stripe region group 61 are extracted as a second design data group. Thereafter, a second strip region 62 which matches design data 16 and is different from the first stripe region group 61 is provided in the data arrange region 10.

公开(公告)号：JPH11102061A

公开(公告)日：1999-04-13

申请号：JP26143997

申请日：1997-09-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/44 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a photomask pattern for projection exposure, a photomask for projection exposure, a focusing position detecting method, a focusing position control method, and the manufacture of a semiconductor device capable of detecting the deviation of a focusing position with one exposure even though a complicated photomask which produces phase difference is not used. SOLUTION: A central light shielding part 20 is arranged inside a peripheral light shielding part 10 as the photomask pattern for focusing position detection. Plural wedge-shaped fine protruding patterns 22 and 24 are formed on the respective sides of the part 20. This pattern is asymmetric right and left (asymmetric up and down), a light shielding part 22 is wedge-shaped on the left side (lower side) of the pattern, but an aperture part positioned between adjacent light shielding parts 24 is wedge-shaped on the right side (upper side). The deviation of the focusing position in the case of exposure is detected as the positional deviation of the transfer pattern of the part 20 in a horizontal direction.