公开(公告)号：WO1993015186A1

公开(公告)日：1993-08-05

申请号：PCT/US1993000706

申请日：1993-01-26

Applicant: MIDWEST RESEARCH INSTITUTE ,  HIMMEL, Michael, E. ,  ADNEY, William, S. ,  TUCKER, Melvin, P. ,  GROHMANN, Karel

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: C12N07/02

CPC classification number: C12N9/2437 ,  C07K2319/02 ,  C12Y302/01004 ,  Y10S435/814 ,  Y10S435/822

Abstract: A purified low molecular weight cellulase enzyme endoglucanase I from Acidothermus cellulolyticus (ATCC 43068). The enzyme is water soluble, possesses both C1 and Cx types of enzyme activity, a high degree of stability toward heat, and exhibits optimum temperature activity at about 80 DEG C at pH's from about 2 to about 9, and an inactivation temperature of about 110 DEG C at pH's from about 2 to about 9.

Abstract translation: 来自Acidothermus cellulolyticus（ATCC 43068）的纯化的低分子量纤维素酶内切葡聚糖酶I. 该酶是水溶性的，具有C1和Cx类型的酶活性，对热量具有高度的稳定性，并且在约80℃和约2至约9的pH下显示最佳温度活性，并且灭活温度为约110 DEG在约2至约9的pH值。

公开(公告)号：WO1992017909A1

公开(公告)日：1992-10-15

申请号：PCT/US1992002281

申请日：1992-03-23

Applicant: MIDWEST RESEARCH INSTITUTE ,  OLSON, Jerry, M. ,  KURTZ, Sarah, R.

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: H01L29/88

CPC classification number: H01L31/0687 ,  H01L31/0725 ,  H01L33/0016 ,  H01L33/0025 ,  Y02E10/544

Abstract: A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

公开(公告)号：WO1988006718A1

公开(公告)日：1988-09-07

申请号：PCT/US1988000715

申请日：1988-03-01

Applicant: MIDWEST RESEARCH INSTITUTE ,  HULSTROM, Roland, L. ,  CANNON, Theodore, W.

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: G01J03/30

CPC classification number: G01W1/18 ,  G01J1/0488 ,  G01J1/42 ,  G01J2001/428 ,  G01J2001/4285 ,  G01N21/538 ,  G01N2021/354 ,  Y02A90/14

Abstract: An atmospheric optical calibration system is provided to compare actual atmospheric optical conditions to standard atmospheric optical conditions on the basis of aerosol optical depth, relative air mass, and diffuse horizontal skylight to global horizontal photon flux ratio. An indicator can show the extent to which the actual conditions vary from standard conditions. Aerosol scattering and absorption properties, diffuse horizontal skylight to global horizontal photon flux ratio, and precipitable water vapor determined on a real-time basis for optical and pressure measurements are also used to generate a computer spectral model and for correcting actual performance response of a photovoltaic device to standard atmospheric optical condition response on a real-time basis as the device is being tested in actual outdoor conditions.

公开(公告)号：WO1998047702A1

公开(公告)日：1998-10-29

申请号：PCT/US1997021090

申请日：1997-11-18

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  WU, Xuanzhi ,  COUTTS, Timothy, J. ,  SHELDON, Peter ,  ROSE, Douglas, H.

IPC: B32B15/00

CPC classification number: C23C14/5806 ,  C03C17/00 ,  C23C14/0629 ,  C23C14/086 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543

Abstract: A photovoltaic device having a substrate, a layer of Cd2SnO4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd2SnO4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd2SnO4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd2SnO4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Abstract translation: 具有基板的光电器件，设置在作为前触点的所述基板上的Cd2SnO4层，设置在所述Cd2SnO4层上的两层或更多层半导体材料的薄膜和设置在所述半导体薄膜上的导电膜 材料以形成与所述薄膜的后电接触。 该器件通过将Cd 2 SnO 4层溅射到衬底上而形成，在半导体材料薄膜上沉积半导体材料薄膜到Cd2SnO4层上，并将导电膜沉积在半导体材料薄膜上。

公开(公告)号：WO1997045767A1

公开(公告)日：1997-12-04

申请号：PCT/US1997008773

申请日：1997-05-27

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  BECHINGER, Clemens, S. ,  GREGG, Brian, A.

IPC: G02F01/15

CPC classification number: G02F1/163 ,  G02F1/1533

Abstract: A photoelectrochemical-electrochromic device is provided. The device comprises a first transparent electrode (12) and a second transparent electrode (14) in parallel, spaced relation to each other. The first transparent electrode (12) is electrically connected to the second transparent electrode (14). An electrochromic material (16) is applied to the first transparent electrode (12) and a semiconductor coating (18) is applied to the second transparent electrode (14). An electrolyte layer (22) contacts the electrochromic material (16) and the semiconductor coating (18). The electrolyte layer (22) has a redox couple whereby upon application of light, the semiconductor coating (18) absorbs the light and the redox couple oxidizes producing an electric field across the device modulating the effective light transmittance through the device.

Abstract translation: 提供了光电化学电致变色装置。 该装置包括彼此间隔开的并联的第一透明电极（12）和第二透明电极（14）。 第一透明电极（12）与第二透明电极（14）电连接。 将电致变色材料（16）施加到第一透明电极（12），并将半导体涂层（18）施加到第二透明电极（14）。 电解质层（22）与电致变色材料（16）和半导体涂层（18）接触。 电解质层（22）具有氧化还原对，由此在施加光时，半导体涂层（18）吸收光并且氧化还原对氧化，从而在器件上产生电场，从而调节通过器件的有效透光率。

公开(公告)号：WO1996010171A1

公开(公告)日：1996-04-04

申请号：PCT/US1995012453

申请日：1995-09-28

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  SOPORI, Bhushan, L.

IPC: G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/474 ,  G01N21/9505 ,  G01N21/9506 ,  G01N2021/8477 ,  G01N2021/8864 ,  G01N2201/065

Abstract: Apparatus for detecting and mapping defects in the surfaces of polycrystalline material (14') in a manner that distinguishes dislocation pits from grain boundaries includes a first laser (16') of a first wavelength for illuminating a wide spot on the surface (20') of the material (14'), a second laser (302) of a second relatively shorter wavelength for illuminating a relatively narrower spot on the surface (20) of the material (14'), a light integrating sphere (22') for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices (40', 50', 316) for detecting and measuring intensities of the respective intermediate and near specular scattered light. In the case where the piece of material (14') includes a photovoltaic device, the current included in the device by the illuminating light can be measured with a current sensing amplifier (332).

Abstract translation: 用于以区别位错坑与晶界的方式检测和映射多晶材料（14'）表面中的缺陷的装置包括用于照亮表面（20'）上的宽光斑的第一波长的第一激光（16'）， 的材料（14'）的第二激光器（302），用于照射材料（14'）的表面（20）上的相对较窄的点的第二相对较短波长的第二激光器（302），用于捕获的光积分球 光学检测装置（40'，50'，316）用于检测和测量光学检测装置（40'，50'，316），并且通过蚀刻位错凹坑在远离镜面反射的中间范围内散射，同时允许由镜面反射近似范围内的蚀刻晶界散射的光通过; 各自的中间和近镜面散射光的强度。 在材料片（14'）包括光电器件的情况下，可以用电流感测放大器（332）测量由照明光包含在器件中的电流。

公开(公告)号：WO1996009900A1

公开(公告)日：1996-04-04

申请号：PCT/US1995012956

申请日：1995-09-28

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  SOPORI, Bhushan, L.

IPC: B05D03/06

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/31654 ,  H01L21/31658

Abstract: A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm to about 6 watts/cm for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm for growth of 100 ANGSTROM - 300 ANGSTROM film at a resultant temperature of about 400 DEG C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO2/Si interface to be very low.

Abstract translation: 一种在硅衬底的表面上生产二氧化硅膜的方法。 该方法包括以大约3瓦特/平方厘米至约6瓦特/平方厘米的光功率密度的大范围的可见光和红外光在基本上纯的氧气氛中照射硅衬底一段时间 足以在硅衬底的表面上产生二氧化硅膜。 在约400℃的最终温度下生长100个ANGSTROM-300 ANGSTROM膜的最佳光功率密度约为4瓦/厘米2。深层瞬态光谱分析在氧化硅中检测不到引入硅衬底的可测量杂质 并且显示出在SiO 2 / Si界面处的界面状态密度非常低。

公开(公告)号：WO1996006454A1

公开(公告)日：1996-02-29

申请号：PCT/US1995009809

申请日：1995-08-03

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  ALBIN, David, S. ,  CARAPELLA, Jeffrey, J. ,  TUTTLE, John, R. ,  CONTRERAS, Miguel, A. ,  GABOR, Andrew, M. ,  NOUFI, Rommel ,  TENNANT, Andrew, L.

IPC: H01L21/208

CPC classification number: H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se2 on a substrate (12) for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se2:CuxSe on the substrate (12) in solid form followed by exposure of the Cu(In,Ga)Se2:CuxSe solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se2:CuxSe solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550 DEG C) at which Cu(In,Ga)Se2 is solid and CuxSe is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the CuxSe with the (In,Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cux(In,Ga)ySez. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se2:CuxSe can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In,Ga), on the substrate (12) at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450 DEG C) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100 DEG C can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

Abstract translation: 在用于半导体器件应用的衬底（12）上制造Cu（In，Ga）Se2的略微Cu不良薄膜的方法包括以下步骤：初始形成稍微富Cu的相分离的Cu（In， Ga）Se2：固体形式的衬底（12）上的CuSee，然后将Cu（In，Ga）Se 2：CuxSe固体混合物暴露于Se蒸气和（In，Ga）蒸气的过压，沉积在Cu ，Ga）Se 2：CuxSe固体混合物，同时将固体混合物的温度同时升高至重结晶温度（约550℃），Cu（In，Ga）Se 2为固体，CuxSe为液体。 （In，Ga）通量终止，同时保持Se超压通量和再结晶温度，以在温度转变期间沉积的（In，Ga）和Se蒸气重结晶CuxSe，形成薄膜 轻微Cu-Cux（In，Ga）ySez。 Cu（In，Ga）Se2：CuxSe的初始富Cu相分离的大晶粒混合物可以通过在基底（12）上依次沉积或共沉积金属前体Cu和（In，Ga） 室温下，在Se过压的情况下将薄膜温度升高至适度退火温度（约450℃），并保持该温度和Se超压退火。 在硒化，中等温度退火之前，也可以在约100℃下进行非硒化低温退火，以使基板上的前体均匀化。

公开(公告)号：WO1996002628A1

公开(公告)日：1996-02-01

申请号：PCT/US1995009067

申请日：1995-07-13

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  HIMMEL, Michael, E. ,  TUCKER, Melvin, P. ,  ADNEY, William, S. ,  NIEVES, Rafael, A.

IPC: C12N01/00

CPC classification number: C12Y302/01021 ,  C07K2319/02 ,  C12N9/2445 ,  C12P7/10 ,  C12Y302/01004 ,  Y02E50/16 ,  Y10S435/822

Abstract: A purified low molecular weight beta -D-glucosidase is produced from Acidothermus cellulolyticus ATCC 43068. The enzyme is water soluble, possesses activity against pNP- beta -D-glucopyranoside, has a high degree of stability toward heat, and exhibits optimal temperature activity at about 65 DEG C at a pH range of from about 2 to about 7, has an inactivation temperature of about 80 DEG C at a pH range of from about 2 to about 7 and has a molecular weight of about 50.5-54.5 as kD determined by SDS-PAGE.

Abstract translation: 纯化的低分子量β-D-葡萄糖苷酶是从嗜热纤维梭菌ATCC 43068产生的。该酶是水溶性的，具有抗pNP-β-D-吡喃葡萄糖苷的活性，对热量具有高度的稳定性，并且表现出最佳的温度活性 在约2-约7的pH范围内约65℃，在约2-约7的pH范围内具有约80℃的失活温度，分子量约为50.5-54.5，由 SDS-PAGE。

公开(公告)号：WO1996002473A1

公开(公告)日：1996-02-01

申请号：PCT/US1995009068

申请日：1995-07-13

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  TRACY, C., Edwin ,  BENSON, David, K.

IPC: C03B23/203

CPC classification number: C03C27/06 ,  C03B23/245 ,  E06B3/6612 ,  Y02A30/25 ,  Y02B80/24

Abstract: A method of welding and sealing the edges of two juxtaposed glass sheets (12, 14) together to seal a vacuum space between the sheets comprises the steps of positioning a radiation absorbant material (110), such as FeO, VO2, or NiO, between the radiation transmissive glass sheets adjacent the edges and then irradiating the absorbant material, preferably with a laser beam, through at least one of the glass sheets (12, 14). Heat produced by the absorbed radiation in the absorbant material melts glass in the portions of both glass sheets (12, 14) that are adjacent the absorbant material, and the melted glass from both sheets flows together to create the weld (216) when the melted glass cools and hardens. The absorbant material can be dissolved and diffused into the melted glass to the extent that it no longer absorbs enough energy to keep the glass melted, thus, with appropriate proportioning of absorbant material to source energy power and welding heat needed, the process can be made self-stopping.

Abstract translation: 将两个并置的玻璃板（12,14）的边缘焊接和密封在一起以密封片材之间的真空空间的方法包括以下步骤：将放射线吸收剂材料（例如FeO，VO2或NiO）放置在 所述辐射透射玻璃板与所述边缘相邻，然后通过所述玻璃板（12,14）中的至少一个照射所述吸收材料，优选用激光束照射所述吸收材料。 由吸收材料中的吸收辐射产生的热量在两个玻璃板（12,14）的与吸收材料相邻的部分中熔化玻璃，并且来自两个片材的熔融玻璃在熔融时形成焊接（216） 玻璃冷却和硬化。 吸收剂材料可以溶解并扩散到熔融玻璃中，使其不再吸收足够的能量以保持玻璃熔化，从而通过适当的吸收材料配比对源能量和所需的焊接热量进行处理， 自停止。