Abstract:
A conversion LED with high color rendition index has a luminophore mixture comprising a first luminophore of the LuAGaG type and a second luminophore of the calsine type, allowing a very high color rendition index for warm white color temperatures.
Abstract:
The invention relates to a method for roughening a surface of a body (1), comprising the following steps: coating the surface with a mask layer (2); applying pre-shaped mask bodies (3) to the mask layer (2); etching though the mask layer at locations that are not covered by mask bodies (3), and; etching the body (1) at locations of its surface that are not covered by the mask layer (2). The invention also relates to an optoelectronic component. By using the mask layer (2) as an additional auxiliary mask, methods having a low selectivity with regard to polystyrene balls can be used for etching.
Abstract:
According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.
Abstract:
The invention relates to a radiation-emitting body, comprising a layer sequence, having an active layer (10) for producing electromagnetic radiation, a reflection layer (50), which reflects the radiation produced, and at least one intermediate layer (40), which is disposed between the active layer (10) and the reflection layer (50). To this end, the active layer (10) on an interface (15) directed toward the reflection layer (50) comprises a rough region, and the reflection layer (50) is substantially planar on an interface (45) directed toward the active layer (10). The invention further relates to a method for producing a radiation-emitting body, wherein a layer sequence is configured on a substrate having an active layer (10) for producing electromagnetic radiation. To this end, an interface (15) is roughened on the active layer (10) and at least one intermediate layer (40) and a reflection layer (50) are configured.
Abstract:
In at least one embodiment of the lamp (1), said lamp comprises at least one optoelectronic semiconductor component (2), which during operation with at least one first wavelength (L1) and at least one second wavelength (L2) emits electromagnetic radiation, wherein the first wavelength (L1) and the second wavelength (L2) differ from each other and are below 500 nm, in particular between 200 nm and 500 nm. The lamp (1) furthermore comprises at least one conversion means (3), which converts the first wavelength (L1) at least partially into radiation having a different frequency. The radiation spectrum emitted by the lamp (1) during operation is metameric with respect to a black body spectrum. Using such a lamp, it is possible to select the first wavelength and the second wavelength such that at the same time a high color rendition quality and high efficiency of the lamp can be achieved.
Abstract:
Disclosed is a radiation receptor (1) comprising a semiconductor body (2) that has a first active region (210) and a second active region (220) which are used for detecting radiation. The first active region (210) and the second active region (220) are located at a distance from each other in a vertical direction. A tunnel region (24) is arranged between the first active region (210) and the second active region (220). The tunnel region (24) is connected in an electrically conducting manner to a connecting surface (31) which is used for externally contacting the semiconductor body (2) in an electrical manner between the first active region (210) and the second active region (220). A method for producing a radiation receptor is also disclosed.
Abstract:
An optoelectronic arrangement (1) comprises a power light emitting diode (10) and an adjusting light emitting diode (20). A first radiation (SL) can be emitted with a first emission spectrum (EL) from the first power light emitting diode (10). A second radiation (SE) with a second emission spectrum (EE) can be emitted from the adjusting light emitting diode (20). An overall radiation (SO) of the optoelectronic arrangement (1) comprises the first radiation (SL) and the second radiation (SE).