公开(公告)号：JPH1070082A

公开(公告)日：1998-03-10

申请号：JP24407996

申请日：1996-08-27

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/285 ,  H01L21/203 ,  H01L21/22 ,  H01L21/223 ,  H01L21/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00

Abstract: PROBLEM TO BE SOLVED: To provide method of forming a P-type nitride based III-V compound semiconductor layer which can bring an electrode into ohmic contact of low resistance with a P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer. SOLUTION: After a P-type nitride based III-V compound semiconductor layer, e.g. P-type GaN layer 3 is grown by an organic metal chemical vapor deposition method or the like, group II elements such as Mg and Zn are diffused on the surface of the layer 3 by a vapor diffusion method or a solid diffusion method, and a P type diffusion layer 4 is formed. The diffusion of group II elements is performed at, e.g. 500-700 deg.C. Thereby an electrode can be brought into ohmic contact of low resistance with the P-type nitride based III-V compound semiconductor layer, while restraining generation of surface roughness, cracks, and deterioration of crystallinity of the semiconductor layer.

公开(公告)号：JPH0855371A

公开(公告)日：1996-02-27

申请号：JP19162794

申请日：1994-08-15

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  UMETSU NOBUHIKO ,  TAKEMOTO SADAHIRO

IPC: G11B7/26

Abstract: PURPOSE:To effectively perform optical wavelength-multiple recording and reproduction by vapor-depositing MFX:R whose vapor deposition can be effected at room temp. or a temp. close to room temp. on a substrate set at a temp. within a specified range and stably forming an optical recording medium excel lent in S-N ratio. CONSTITUTION:A reflecting layer 2 is formed on a quartz substrate 1 by vapor- depositing Al in about 500nm thickness at 200-250 deg.C temp. of the substrate. A recording layer 3 is then formed on the reflecting layer 2 by vapor-depositing SrFCl0.5Br0.5:Sm in about 1mum thickness at 250-350 deg.C temp. of the substrate to produce the objective optical recording medium 4. Pressure during this vapor deposition is regulated to about 10 -10 Torr. The medium 4 is irradiated with laser light for recording and reproduction from the side opposite to the substrate 1. In this case, a transparent substrate is not necessarily required as the substrate 1. Since the optical recording medium excellent in S-N ratio in its light absorption spectrum is stably formed, optical wavelength-multiple recording and reproduction can be effectively performed.

公开(公告)号：JPH07272277A

公开(公告)日：1995-10-20

申请号：JP7989294

申请日：1994-03-26

Applicant: SONY CORP

Inventor： TAKEMOTO SADAHIRO ,  UMETSU NOBUHIKO ,  ASAZUMA YASUNORI

IPC: G11B20/00 ,  G11B7/00 ,  G11B7/004 ,  G11B7/14

Abstract: PURPOSE:To improve recording density and a data transmitting rate and to simplify system configuration by recording plural bits of digital data on a recording medium in parallel. CONSTITUTION:A recording layer and a reflecting layer indicating a PHB phenomenon are provided in a disk type recording medium 7. Selection light having wavelengths of lambda1-lambdan generated in a multi-wavelength laser beam source section 1 and gate light from a laser beam source section 2 are superimposed, and projected to a recording medium 7 through a polarizing beam splitter 4, a lambda/4 plate 5 and lens 6. A reflected light is supplied to a spectroscope unit 8 from the polarizing beam splitter 4, and divided into colors having plural wavelengths, and received by a detector 9. Multiplicity (n) of a wavelength of the selection light and (n) bits of data are made correspondent, and '0', '1' of data and ON/OFF of the selection light are made correspondent. ON/OFF of the selection light is performed by controlling a light source section 1 by a system control circuit 12 receiving data from a data bus 11. Reproduced data is supplied to the system control circuit 12 from the detector 9 through a detector control circuit 13.

公开(公告)号：JPH07129996A

公开(公告)日：1995-05-19

申请号：JP27857193

申请日：1993-11-08

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  TAKEMOTO SADAHIRO ,  UMETSU NOBUHIKO

IPC: G11B7/00 ,  G11B7/005 ,  G11B7/14

Abstract: PURPOSE:To make recording and reproducing possible with simple constitution and to reduce the size and cost of the device by constituting an optical member of a specific combination. CONSTITUTION:The recording light from a light source section 1 is reflected by a deflection beam splitter 2, is passed through a quarter-wave plate 24 and is cast to an optical wavelength multiplex recording medium 4 and recording is conducted by a two photon recording method at the time of recording. The reflected light is again passed through the quarter-wave plate 24, is rotated 90 deg. in the plane of polarization and is transmitted through the deflection beam splitter 2 to avert the return beam to the light source 1 section. At this time, the return beam is partly reflected by a polarization beam splitter 23 and is supplied to a detecting section 28, by which a servo signal is obtd. The linearly polarized light from the light source section 1 is cast to the recording medium and the return beam is again passed through the quarter-wave plate 24 to rotate the plane of polarization by 90 deg. and is made incident on the photodetecting part 3 through the deflection beam splitter 2, by which recording information is obtd. at the time of reproducing. The device is simply constituted and the size, weight and cost of the device are reduced by combining the light source lens, the beam splitters and the quarter-wave plate.

公开(公告)号：JP2010045165A

公开(公告)日：2010-02-25

申请号：JP2008207863

申请日：2008-08-12

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  TAMAMURA KOJI ,  TASAI KUNIHIKO ,  ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  NAKAMURA HITOSHI ,  FUJISAKI SUMIKO ,  KIKAWA TAKESHI

IPC: H01S5/327 ,  H01S5/22 ,  H01S5/347

CPC classification number: H01S5/327 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3216

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element including an n-type clad layer having characteristics required for an n-type clad layer or a p-type clad layer having characteristics required for a p-type clad layer.
SOLUTION: An n-type first clad layer 12A has higher n-type carrier density than an n-type second clad layer 12B, and is also made thicker than the n-type second clad layer 12B to thereby secure the carrier conductivity of the whole n-type clad layer 12. The n-type second clad layer 12B has a higher conduction band sub-level lower end than an active layer 14 to thereby secure a sufficient electron barrier for carrier confinement and also suppress type II light emission.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决问题的方案：提供一种具有n型覆盖层的半导体元件，所述n型覆盖层具有n型覆盖层所需的特性或具有p型覆盖层所需特性的p型覆盖层。 解决方案：n型第一覆盖层12A具有比n型第二覆盖层12B更高的n型载流子密度，并且也比n型第二覆盖层12B更厚，从而确保载流子导电性 n型第二覆盖层12B具有比有源层14更高的导带子级下端，从而确保用于载流子限制的足够的电子势垒，并且还抑制II型发光 。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010040924A

公开(公告)日：2010-02-18

申请号：JP2008204401

申请日：2008-08-07

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  NAKAJIMA HIROSHI ,  ASAZUMA YASUNORI ,  NAKAMURA HITOSHI

IPC: H01S5/04 ,  H01S5/14

Abstract: PROBLEM TO BE SOLVED: To provide semiconductor laser equipment that can reduce or eliminate a sum-wavelength noise and speckle noise, does not require any high position precision, and can be miniaturized.
SOLUTION: The semiconductor laser equipment has: a current drive type semiconductor laser 2 utilizing emission light generated by current injection to an active layer 23 for laser oscillation as a pumping light source; and an optically pumped semiconductor laser 3 utilizing emission light generated by application of laser beams radiated from the current drive type semiconductor laser 2 to the active layer 34 for laser oscillation, as an optically pumped laser. There is a cylindrical lens 6, which reduces a divergence angle in a fast axis direction of laser beams L1 emitted from the current drive type semiconductor laser 2, on an optical axis AX1 of the current drive type semiconductor laser 2 and between the current drive type semiconductor laser 2 and the optically pumped semiconductor laser 3.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供可以减少或消除和波长噪声和斑点噪声的半导体激光设备，不需要任何高位置精度，并且可以小型化。 解决方案：半导体激光设备具有：电流驱动型半导体激光器2，利用通过电流注入产生的发射光作为激光振荡的有源层23作为泵浦光源; 以及光泵浦半导体激光器3，其利用从当前驱动型半导体激光器2辐射的激光束产生的发射光作为激光振荡用作激光振荡用活性层34。 存在一个柱面透镜6，其减小了从当前驱动型半导体激光器2发射的激光束L1在当前驱动型半导体激光器2的光轴AX1上的当前驱动类型 半导体激光器2和光泵浦半导体激光器3.版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010040923A

公开(公告)日：2010-02-18

申请号：JP2008204400

申请日：2008-08-07

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  TASAI KUNIHIKO ,  TAMAMURA KOJI ,  ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  NAKAMURA HITOSHI ,  FUJISAKI SUMIKO ,  KIKAWA TAKESHI

IPC: H01S5/327 ,  H01S5/347

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving luminous efficiency by suppressing type II emission. SOLUTION: A spacer layer 14 is provided between an n-type cladding layer 12 (n-type graded layer 13) and an active layer 16 (guide layer 15). The spacer layer 14 has a band structure, where the lower end of a conduction band has a level higher than that of the lower end of the conduction band of the n-type cladding layer 12, the n type graded layer 13, the guide layer 15, and the active layer 16, and is composed of a material and by a thickness for suppressing the type II emission of the n-type cladding layer 12 and the active layer 16. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供能够通过抑制II型发射来提高发光效率的半导体发光元件。 解决方案：间隔层14设置在n型包覆层12（n型梯度层13）和有源层16（引导层15）之间。 间隔层14具有带状结构，其中导带的下端具有比n型包覆层12的导带的下端，n型分级层13，引导层 15和有源层16，并且由用于抑制n型包层12和有源层16的II型发射的材料和厚度组成。版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006269988A

公开(公告)日：2006-10-05

申请号：JP2005089809

申请日：2005-03-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of stabilizing a luminescence at an end in the widthwise direction of a current injection region, and capable of making the uniformity of an NFP improved.
SOLUTION: An n-type semiconductor layer 20, an active layer 30 and a p-type semiconductor layer 40 are laminated successively, and a current constriction region 50 is formed to the p-type semiconductor layer 40. A recess 70 is formed at a place displaced on the inside, in the widthwise direction from a border line 52 in the current passage region 51 of the p-type semiconductor layer 40, and a refractive index in the recess 70 is made lower than the p-type semiconductor layer 40. The effective refractive index of a region 30B directly under the recess of the active layer 30 is lowered, and the gain in the end region 30D between the region 30B directly under the recess and a current non-injection region 30C is improved relatively, and the light intensity is increased.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够稳定电流注入区域的宽度方向的端部的发光并能够提高NFP的均匀性的半导体激光器。 解决方案：依次层叠n型半导体层20，有源层30和p型半导体层40，并且向p型半导体层40形成电流收缩区域50.凹部70为 形成在从p型半导体层40的电流通过区域51中的边界线52沿宽度方向从内侧移位的位置，使凹部70的折射率低于p型半导体 有源层30的凹部正下方的区域30B的有效折射率降低，在凹部正下方的区域30B和电流非注入区域30C之间的端部区域30D的增益相对提高 ，并且光强度增加。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005129604A

公开(公告)日：2005-05-19

申请号：JP2003361420

申请日：2003-10-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/343 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To equalize an NFP in the semiconductor laser of a broad area type.
SOLUTION: For constitution of the semiconductor laser wherein a waveguide of light is formed by using an n-type cladding layer 2, an n-type separated confinement heterostructure 3, an activity layer 4, a p-type separated confinement heterostructure 5 and a p-type cladding layer 6, a diffraction portion 10 which carries out diffraction of light which is guided in the waveguide into a direction different from an X direction in a field parallel to the activity layer 4 is formed in the vicinity of one laser end surface 9B out of laser end surfaces 9A, 9B which are arranged at both ends of the X direction which becomes an axial direction of the waveguide.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了均衡广域型半导体激光器中的NFP。 解决方案：对于通过使用n型包覆层2形成光波导的半导体激光器的结构，n型分离的限制异质结构3，活性层4，p型分离限制异质结构5 并且在一个激光器附近形成有p型包覆层6，在与激活层4平行的场中，将在波导管内被引导到与X方向不同的方向进行衍射的衍射部10 端面9B设置在成为波导的轴向的X方向的两端的激光端面9A，9B。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004128521A

公开(公告)日：2004-04-22

申请号：JP2003417116

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device includes a step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region and extending rectilinearly are regularly arranged in parallel with each other in the first crystal region. In the above manufacturing method, the second regions are arranged at an interval of 50 μm or above, one or more rows of the second regions are included, and a device region is demarcated on the nitride III-V compound semiconductor substrate so as not to enable the second regions to be included in the light emitting region of the semiconductor light emitting device. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有优异发光特性的半导体发光器件，非常可靠，使用寿命长。 解决方案：一种制造半导体发光器件的方法包括使形成发光器件结构的氮化物III-V化合物半导体层能够在氮化物III-V化合物半导体衬底上生长的步骤，其中多个第二区域 具有比第一晶体区域所具有的第一平均位错密度高且直线延伸的第二平均位错密度在第一晶体区域中彼此平行地规则排列。 在上述制造方法中，第二区域以50μm以上的间隔配置，包含一行以上的第二区域，在氮化物III-V化合物半导体衬底上划分器件区域， 使得第二区域能够被包括在半导体发光器件的发光区域中。 版权所有（C）2004，JPO