公开(公告)号：JP2003168750A

公开(公告)日：2003-06-13

申请号：JP2002007085

申请日：2002-01-16

Applicant: SONY CORP

Inventor： NAKAMURA AKIHIRO ,  NOMOTO KAZUMASA ,  FUJIWARA ICHIRO ,  TERANO TOSHIO ,  KOBAYASHI TOSHIO

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide an isolation structure between word lines, which permits the lines to be arranged close. SOLUTION: The semiconductor device is provided with a plurality of memory transistors arranged in lines and a plurality of word lines WL1, WL2,..., being gate electrodes of the memory transistors in the same line and long in the direction of the lines and repeated in the direction of a row, while two word lines, neighbored in the direction of the row among the plurality of word lines, are separated by a dielectric film GD2 interposed so that the size in the separating direction of them becomes the thickness of the film. The dielectric film GD2 is constituted of a plurality of dielectric films BTM, CHS, TOP, for example, and is a charge accumulation film having charge retaining ability. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002261175A

公开(公告)日：2002-09-13

申请号：JP2001187794

申请日：2001-06-21

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO

IPC: C23C16/42 ,  H01L21/318 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To suppress the unevenness of the structure and characteristics of a device by reducing an incubation time in charge accumulation film formation while preventing the lowering of a memory device characteristic. SOLUTION: The nonvolatile semiconductor memory has a plurality of dielectric films GD layered on a semiconductor SUB, and a gate electrode GE on the plurality of the dielectric films GD. The plurality of the dielectric films GD includes a bottom dielectric film BTM on the semiconductor SUB, a charge accumulation film CHS having charge accumulation ability, and a buffer layer BUF formed between the bottom dielectric film BTM and the charge accumulation film CHS and comprising. a dielectric substance having a composition between them. The lattice matching of the charge accumulation film CHS and a substrate face in its formation is improved, and the incubation time is reduced.

公开(公告)号：JPH11186421A

公开(公告)日：1999-07-09

申请号：JP35791497

申请日：1997-12-25

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO

IPC: G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To attain high speed reading and low voltage program operation by increasing Vth shift amounts without deteriorating a writing erasing speed and data holding characteristics. SOLUTION: This device includes a gate insulating film 6 between a channel formation area 1a and a gate electrode 20, tunnel insulating film 10 in the gate insulating film, and plural small particle diameter conductors 14 flatly or spatially made discrete on the tunnel insulating film as a charge storing means. Each small particle diameter conductor 14 is obtained as a bi-polar trap in a state in which an electron is stored, a state in which a hole is stored, and a neutral state in which neither the electron nor the hole is stored at the time of writing erasing. At least, the part brought into contact with the small particle diameter conductors of the tunnel insulating film 10 is composed of silicon nitride and oxide. Also, at least the part brought into contact with the gate insulating film of the gate electrode 20 is made of semiconductor materials in the same conductive type as the channel formation area 1a.

公开(公告)号：JPH10172187A

公开(公告)日：1998-06-26

申请号：JP32569396

申请日：1996-12-05

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO

IPC: G01N37/00 ,  G01Q60/24 ,  G01Q60/30 ,  G01Q60/46 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/06 ,  G11B9/14

Abstract: PROBLEM TO BE SOLVED: To enable fast and high-density recording and reproducing by using a combination of SPM and a charge accumulating layer having two or more heterolayers so that information with three or more values pet one recording bit can be recorded. SOLUTION: This recording medium 10 is produced by successively forming a SiO2 silicon oxide film, a SiN silicon nitride film and a SiO2 silicon oxide film on a Si substrate 11 and forming an active layer 13 comprising a heterolayer adjacent to them. Information with three or more values per one recording bit is recorded by applying voltage from a head having a needle electrode so as to move charges of electrons or hole trap to a specified region. The information with three or more values recorded in a contact or noncontact state in the recording medium 10 is reproduced by detecting changes in the charge, surface potential or electrostatic capacity in a specified region.

公开(公告)号：JPH09212926A

公开(公告)日：1997-08-15

申请号：JP1790596

申请日：1996-02-02

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO ,  KOJIMA SHIGERU

IPC: G11B9/06 ,  G01Q60/24 ,  G01Q80/00 ,  G11B9/14

Abstract: PROBLEM TO BE SOLVED: To obtain a recording and reproducing apparatus which is excellent in a high-speed and high-density recording operation by a method wherein a specific voltage is applied from a head so as to record or erase information and recorded information is reproduced by detecting the change amount of a capacitance. SOLUTION: A recording medium 10 is arranged on a moving and mounting base 30. While a needle-shaped electrode 21 at a recording head HR is being scanned relatively on an SiO2 film on the surface of the recording medium 10, a pulse voltage, based on recording information, at 20V or lower is applied while a conductive cantilever 22 is made negative, and a strong electric field is applied to the recording medium 10. At this time, carriers (electrons) are injected into respective carrier traps in a heterointerface from the needle-shaped electrode 21 according to the recording information, and information is recorded. When recorded information is read out from the recording medium 10, electrons are injected locally from the needle-shaped electrode 21 at the cantilever 22 into a trap in an SiO2 /SiN interface and into a trap in an SiN silm. A difference in the amount of an electric charge generated locally is detected by the distribution of a capacitance.

公开(公告)号：JPH09153235A

公开(公告)日：1997-06-10

申请号：JP6854696

申请日：1996-03-25

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO

IPC: G11B9/02 ,  G01Q60/24 ,  G01Q80/00 ,  G11B9/14 ,  H01L49/00

Abstract: PROBLEM TO BE SOLVED: To achieve a high speed and high density recording and to realize a low voltage driving. SOLUTION: The device records and reproduces information by a head HR which consists of a needle shaped electrode 21. The information is recorded or erased by the polarization reversal of a prescribed region of a recording medium 10 by applying a voltage of less than 20V from the head HR. The reproducing operation of the information recorded in a minute region by the polarization reversal is conducted by detecting the amount of the changes of the electric charges or the capacitance or the amount of the changes in the piezoelectric distortion in the minute region while the head HR contacts the medium 10.

公开(公告)号：JPH0887744A

公开(公告)日：1996-04-02

申请号：JP22466194

申请日：1994-09-20

Applicant: SONY CORP

Inventor： TANAKA KOICHI ,  KAMEI TAKAHIRO ,  FUJIWARA ICHIRO ,  KAWAKADO KOICHI

IPC: C10M105/80 ,  C10N10/08 ,  C10N30/08 ,  C10N40/18 ,  G11B5/64 ,  G11B5/71 ,  G11B5/72 ,  G11B5/725

Abstract: PURPOSE: To improve wear resistance and durability by sticking a lubricant made of a Ti compd. having benzenesulfonyl groups represented by a specified structural formula on a carbon protective film. CONSTITUTION: A lubricant made of a Ti compd. having benzenesulfonyl groups represented by the structural formula is stuck on a carbon protective film on the magnetized layer of a magnetic recording medium. The coefft. of friction is reduced by the Ti compd. and the objective magnetic recording medium having improved wear resistance and durability is obtd.

公开(公告)号：JPH07220266A

公开(公告)日：1995-08-18

申请号：JP897894

申请日：1994-01-31

Applicant: SONY CORP

Inventor： FUJIWARA ICHIRO ,  KAMEI TAKAHIRO ,  TANAKA KOICHI ,  KAWAKADO KOICHI

IPC: G11B5/66 ,  C10M105/10 ,  C10M105/24 ,  C10M105/58 ,  C10M105/80 ,  C10N10/08 ,  C10N40/18 ,  G11B5/72 ,  G11B5/725

Abstract: PURPOSE:To ensure superior lubricating performance by forming a magnetic layer and a protective layer on a nonmagnetic substrate and sticking a mixture of a coupling agent with a partially fluorinated alkylamine having a prescribed structure on the protective layer. CONSTITUTION:A magnetic layer 2 and a protective layer 3 are formed on a nonmagnetic substrate 1 and a mixture of a coupling agent with a partially fluorinated alkylamine represented by the formula CF3-(CF2)y-(CH2)x-NH2 is stuck on the protective layer 3 to obtain the objective magnetic recording medium having satisfactory running performance, wear resistance and durability independently of service environment. In the formula, (x) is an integer of 2-29, (y) is an integer of 1-28 and (x+y) is an integer of 8-30.

公开(公告)号：JP2011155248A

公开(公告)日：2011-08-11

申请号：JP2010270334

申请日：2010-12-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIKUCHI YOSHIAKI ,  TSUGAWA EISHIN ,  FUJIWARA ICHIRO

IPC: H01L27/146 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/14

Abstract: PROBLEM TO BE SOLVED: To provide: a solid-state imaging device that suppresses deterioration in pixel characteristics due to a crystal defect caused in a silicon layer; a method of manufacturing the same; and a camera. SOLUTION: The solid-state imaging device includes: a photodiode sectioned by pixels of a light-receiving surface, formed by integrating a plurality of pixels, of a semiconductor substrate; and a signal read portion for reading signal charges generated and stored in the photodiode or a voltage corresponding to the signal charges. The photodiode includes: a first semiconductor layer 13 of a first conductivity type, formed on the semiconductor substrate 10; a second semiconductor layer 24a of the first conductivity type, formed on the first semiconductor layer while projecting from the semiconductor substrate to be in a shape that decreases in area of a section on a plane parallel with a surface of the semiconductor substrate as it goes away from the semiconductor substrate; and a third semiconductor layer 25 of a second conductivity type, formed on a surface of the second semiconductor layer, wherein the first and second semiconductor layers are formed apart from a transfer gate electrode 22a of the signal read portion. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供：抑制由硅层引起的晶体缺陷引起的像素特性劣化的固体摄像器件; 其制造方法; 和相机。 解决方案：固态成像装置包括：由半导体衬底的多个像素集成形成的由光接收表面的像素分割的光电二极管; 以及用于读取生成并存储在光电二极管中的信号电荷或与信号电荷相对应的电压的信号读取部分。 光电二极管包括：形成在半导体衬底10上的第一导电类型的第一半导体层13; 第一导电类型的第二半导体层24a，形成在第一半导体层上，同时从半导体衬底突出，以使其在与半导体衬底的表面平行的平面上的截面积减小的形状，因为它消失 从半导体衬底; 以及形成在所述第二半导体层的表面上的第二导电类型的第三半导体层25，其中所述第一和第二半导体层与所述信号读取部分的传输栅电极22a分开形成。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011035278A

公开(公告)日：2011-02-17

申请号：JP2009182036

申请日：2009-08-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAGAWA KEIEI ,  MIZUGUCHI TETSUYA ,  FUJIWARA ICHIRO ,  KOUCHIYAMA AKIRA ,  SASAKI SATOSHI ,  YAMADA NAOMI

IPC: H01L27/10 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1633

Abstract: PROBLEM TO BE SOLVED: To strike a balance between the reduction in thickness of a memory layer and the suppression of variations among elements, in a resistance change type semiconductor memory device.
SOLUTION: Resistance change type memory cells are arranged in an array. Each of the memory cells includes a first electrode 15 formed on a semiconductor substrate 10, an ion source layer 17 formed on an upper layer of the first electrode, and a second electrode 19 formed on an upper layer of the ion source layer, and a resistance change type memory layer 16 is formed on an interfacial surface between the first electrode and the ion source layer by oxidization of the surface of the first electrode or the surface of the ion source layer.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了在电阻变化型半导体存储器件中平衡存储层的厚度的减小和元件之间的变化的抑制。 解决方案：电阻变化型存储单元排列成阵列。 每个存储单元包括形成在半导体衬底10上的第一电极15，形成在第一电极的上层上的离子源层17和形成在离子源层的上层上的第二电极19， 通过氧化第一电极的表面或离子源层的表面，在第一电极和离子源层之间的界面上形成电阻变化型存储层16。 版权所有（C）2011，JPO＆INPIT