公开(公告)号：JP2002305193A

公开(公告)日：2002-10-18

申请号：JP2001107505

申请日：2001-04-05

Applicant: SONY CORP

Inventor： KITO HIDEYOSHI ,  HASEGAWA TOSHIAKI

IPC: C23C16/42 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To solve the problems of deterioration in the characteristics or peeling occurs in an insulating film or metal wiring in a semiconductor device having an insulating film structure, in which a silicon oxide film and an organic insulating film are laminated, etc. SOLUTION: This semiconductor device has an insulation layer, obtained by laminating a first insulating film 1, made of a silicon oxide film and a second insulating film 2 made of an organic insulating film. The silicon oxide film is that subjected to moisture absorption suppression, which has a characteristic that a ratio SI/SII of area integrals SI and SII of degas spectra is between 1 and 1.5 inclusive by ion current measurement in temperature-programmed desorption mass spectrometry, based on masses 18 of the laminated layer structure of the silicon oxide film and the organic insulating film and a single-layer structure of a silicon oxide film.

公开(公告)号：JP2002270606A

公开(公告)日：2002-09-20

申请号：JP2001062837

申请日：2001-03-07

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/28 ,  H01L21/318 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, using an insulating film whose etching selection ratio with reference to silicon oxide film is high, and to provide the semiconductor device. SOLUTION: The method of manufacturing the semiconductor device, using a silicon carbonitride film (an SiCN film 12a), is one in which the SiCN film 12a is chemical-vapor deposited by a reaction gas containing at least Si(CH3 )n H(4-n) . The semiconductor device 1 uses the SiCN film 12a as the insulation film.

公开(公告)号：JP2001077196A

公开(公告)日：2001-03-23

申请号：JP25376999

申请日：1999-09-08

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  IKEDA KOICHI ,  KITO HIDEYOSHI

IPC: H01L21/32 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing by using a structure of a mask in which the recycling of a resist film is enabled and using a material having a low permittivity in the lowermost layer of the mask when a wiring structure is formed on an interlayer dielectric including a low organic film having a low permittivity. SOLUTION: This semiconductor device comprises the step of forming a 3-layer mask of different materials consisting of a first mask 24, a second mask 22, and a third mask 21 from the bottom layer on an interlayer dielectric 12 including first and second low dielectric constant films 13, 15. The second mask 22 is formed with a film of a material that protects a first film 16 which forms the first mask 24 when the third mask 21 is formed, and the first film 16 is formed with a low permittivity material.

公开(公告)号：JP2000294633A

公开(公告)日：2000-10-20

申请号：JP9959399

申请日：1999-04-07

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in mechanical strength, moisture resistance, adhesive strength, etc., and has a highly reliable interlayer insulation film structure and its manufacturing method, by solving a problem of xerogel possible to obtain a relative permittivity of 0.2 or less without reducing greatly the effective relative permittivity of the entire interlayer insulation film. SOLUTION: In the semiconductor device which is provided with such an interlayer insulation film including a xerogel film, the interlayer insulation film comprises a first insulation film 13 made of xerogel film, a first organic insulation film 14, and a second insulation film 15 made of xerogel film. A wiring groove 31 is formed in the second insulation film 15, and a connection hole 32 is made from the first organic insulation film 14 to the first insulation film 13.

公开(公告)号：JP2000058540A

公开(公告)日：2000-02-25

申请号：JP21942298

申请日：1998-08-03

Applicant: SONY CORP

Inventor： IKEDA KOICHI ,  HASEGAWA TOSHIAKI ,  KOMAI HISANORI

IPC: B05D5/12 ,  C01B33/12 ,  C09D183/06 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To make a composition for forming low-permittivity insulating film containing the polymer of an alkoxy silane compound having a prescribed molecular weight distribution of a small capacity between wirings and a uniform particle size, by applying the composition to the surface of a substrate and drying the applied surface at a specific temperature, and then, baking the composition at another specific temperature. SOLUTION: A film having a thickness of 500 nm is formed on a substrate which is formed by forming a conductive film composed of aluminum, etc., on a silicon wafer by applying a composition for forming low-permittivity insulating film containing the oligomer of alkoxy silane having a prescribed molecular weight distribution to the substrate. Then, after the applied surface is dried at 50-200 deg.C, the composition is annealed (baked) at 300-500 deg.C. After annealing, a connecting hole is formed through the obtained oxide silicon film and the connecting hole is filled up with tungsten 3. The silicon oxide has a uniform particle size and no void is formed between the sidewall of the silicon oxide film and tungsten film. Therefore, a highly reliable insulating film can be obtained.

公开(公告)号：JPH11340321A

公开(公告)日：1999-12-10

申请号：JP14553898

申请日：1998-05-27

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor device which prevents the burying defect of a material layer into a via hole or a wiring groove which is formed in an organic low-permittivity film or an inorganic insulating film on it due to a desorbed gas generated from the organic low-permittivity film. SOLUTION: In a semiconductor device, an inorganic insulating film 17 (or 23) is provided on a low-permittivity film 16 (or 22),and opening patterns 18 (or 24) which are composed of via holes or wiring grooves which are passed through at least the inorganic insulating film 17 (or 23) are formed. In the semiconductor device, a dummy opening pattern 19 (or 25) which is formed in a state of passing through the inorganic insulating film 17 (or 23) is provided. The dummy opening pattern 19 (or 25) is formed in a region in which the pattern density of the opening patterns 18 (or 24) is low.

公开(公告)号：JPH1167906A

公开(公告)日：1999-03-09

申请号：JP22528097

申请日：1997-08-21

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L23/522 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide an optimum interlayer insulating film so as to reduce the interwiring capacity and ensure a heat dissipating path, by making low dielectric constant insulating film thinner on a region where the wiring interval is large than that on a region where the wiring interval is small. SOLUTION: On a semiconductor substrate 1, a lower layer insulating film 2 and a line-and-space shaped wiring group 3 having a height H are formed. The wiring group 3 is covered with a low dielectric constant insulating film 4, and an upper layer insulating film 5 is formed to cover the low dielectric constant insulating film 4, preferably, with a planarized surface. The film thickness T of the wiring group 3 is preferably selected within a range of; (1-S)H

公开(公告)号：JPH09275102A

公开(公告)日：1997-10-21

申请号：JP8258696

申请日：1996-04-04

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/50 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To lower the dielectric constant and improve long-term reliability at the same time for the interlayer insulating film of a semiconductor device. SOLUTION: After forming an SiOF film 5, at least F atoms, which unstably combine with Si atoms and have high reactivity with H2 O, are removed by hydrogen plasma process or hydrogeneration annealing. The F atom cuts the Si-O bond which has five or six electrons on the outermost shell with high lattice vibration among the network structures of normal SiOx film, the combining hand free of Si atom is terminated, and a structure which has four electrons on the outermost shell, which is energitically most stable, is increased. The dielectric constant of the SiOx film reduces by containing the F atom, since the ionic polarization of a film reduces by the increase of the structure which has four electrons on the outermost shell, and it is considered not by the effects of the F atom itself. Therefore, the F atom after film formation is not needed. The quality improved SiOF film 5m obtained in this method is provided with a low dielectric constant and high moisture resistance.

公开(公告)号：JPH09213690A

公开(公告)日：1997-08-15

申请号：JP2082696

申请日：1996-02-07

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C08L79/08 ,  C08L101/00 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain a dielectric material, which is enhanced in the heat resistance and is low suppressed in the thermal expansion coefficient, and a dielectric film by a method wherein a resin having a benzene ring structure is mixed into a phlorocarbon polymer having an annular structure. SOLUTION: A dielectric material obtainable by mixing a resin, which functions as a reinforcing material and has a benzene ring structure, into a fluorocarbon polymer having an annular structure is used. An insulating film 4 is formed and a silicon oxide film 5 is formed on the film 4. Moreover, a silicon oxide film 6 is formed on the upper layer of the film 5 by a plasma CVD method and a semiconductor device 7 is obtained. As the dielectric material, which has a heat resistance and has a thermal expansion coefficient which is low suppressed, is used for the formation of the film 4, the film 4, which is not decomposed in a heat treatment and is suppressed the production of a void, can be obtained.

公开(公告)号：JPH098030A

公开(公告)日：1997-01-10

申请号：JP15758695

申请日：1995-06-23

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768

Abstract: PURPOSE: To keep ability for embedding a stage with an aspect ratio of approximately 4 and also improve global flattening ability. CONSTITUTION: A silicon oxide film (insulation film 14) which is formed by liquefying material gas on a substrate surface (a surface of a protection film 13) is manufactured by means of chemical vapor phase epitaxy using the material gas including at least monosilane or polysilane and alcohol. In addition, material gas including at least rnonosilane or polysilane and gas being acid in aqueous solution may be used.