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公开(公告)号：JPH0851100A
公开(公告)日：1996-02-20
申请号：JP20434394
申请日：1994-08-05
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA , ABE MISUZU
IPC: G03F1/76 , H01L21/302 , H01L21/3065 , G03F1/08
Abstract: PURPOSE:To enable a fine structure to be easily formed high in controllability by a method wherein an etching selection ratio of an etching mask to a work is set higher than a specific value when a work is processed into a fine structure by dry-etching. CONSTITUTION:When a fine pillar-structure 67 is formed, etching masks 79 which are t in thickness and w in width and whose etching selection ratio to a board 14 is above 12 are provided at the same interval with the pillars of the pillar-structure 67 on a plan view are provided onto the upside of the board 14 which is large in thickness T and serves as a head board. A reactive ion etching operation or a reactive sputtering operation is carried out using the etching masks 79 and etching gas 70, whereby a region of the board 14 where no etching masks 79 are present is selectively removed as deep as h by etching. By this setup, upright pillars 67 w in width and h in height are formed at a prescribed interval under the masks 79, and thus a dip-dyeing layer 71 composed of the fine pillar-structure 67 and the board 14 can be obtained.
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公开(公告)号：JPH07297486A
公开(公告)日：1995-11-10
申请号：JP19495194
申请日：1994-07-27
Applicant: SONY CORP
Inventor： MARUTANI YUKITOSHI , KOBAYASHI TOSHIMASA , KONDO KENJI , NEMOTO KAZUHIKO , HIGUCHI YOSHINOBU
Abstract: PURPOSE:To provide a manufacturing method which excels in controllability so that a ridge wave guide semiconductor laser of high output, low threshold and high reliability which has uniform characteristics by self-alignment can be obtained. CONSTITUTION:On an n-type GaAs substrate 1, a first clad layer 2 composed of an n-type AlGaAs, an active layer 3 composed of intrinsic AlGaAs and a second clad layer 4 composed of p-type AlGaAs are formed in order, and further thereon, a light guide layer 5 and a third clad layer 6 are formed, which are composed of p-type Alx Ga1-x As at both sides of which current obstructing layers 7 are formed in a ridge-like form. A contact layer 8 is provided on top of a ridge and the whole surface of the current obstructing layers 7. Thus, a ridge wave guide semiconductor laser is made. When the thickness of the light guide layer 5, the distance between the light guide layer and the active layer 3 and the composition of the current obstructing layers 7 are optimized, the laser characteristic of the ridge wave guide semiconductor laser is further improved.
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公开(公告)号：JPH05335685A
公开(公告)日：1993-12-17
申请号：JP16336292
申请日：1992-06-01
Applicant: SONY CORP
Inventor： NAKAYAMA NORIKAZU , KOBAYASHI TOSHIMASA
Abstract: PURPOSE:To provide a independently-driven type semiconductor laser which does not require such lead wire connection to a common electrode that causes a electrical connection fault between an independent electrode and the independent electrode fitting section of a conductor line. CONSTITUTION:This laser 1 is provided with a plurality of light emitting sections 12 formed on a substrate 10 and the sections 12 are respectively and electrically connected with independent electrodes 20 and common electrodes 20. In addition, the electrodes 20 and 22 are nearly arranged in a plane of the same substrate.
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公开(公告)号：JP2006156509A
公开(公告)日：2006-06-15
申请号：JP2004341348
申请日：2004-11-26
Inventor： KOBAYASHI TOSHIMASA
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that can optimize the whole structure of a semiconductor light emitting element by effectively utilizing a high defective density region in forming the semiconductor light emitting element or electron traveling layer, by using a nitride-based group III-V compound semiconductor layer having a low defective density region and the high defective density region. SOLUTION: In the semiconductor device, nitride-based group III-V compound semiconductor layers 4, 5, and 6 forming an element structure are grown on a nitride-based group III-V compound semiconductor substrate 1 having a second region 2 with a second mean defective density higher than a first mean defective density, in a first region 3 composed of a crystal having the first mean defective density. The first region 3 is used for an active region and the second region 2 is used for a electrode wiring region or heat exhausting structure region. The semiconductor device is a semiconductor laser, light emitting diode, transistor, etc. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种半导体器件，其可以通过在形成半导体发光元件或电子传播层中有效利用高缺陷密度区域来优化半导体发光元件的整体结构， 具有低缺陷密度区域和高缺陷密度区域的III-V族化合物半导体层。 解决方案：在半导体器件中，形成元素结构的基于氮化物的III-V族化合物半导体层4,5和6在具有第二区域2的氮化物基III-V族化合物半导体衬底1上生长 在由具有第一平均缺陷密度的晶体构成的第一区域3中具有高于第一平均缺陷密度的第二平均缺陷密度。 第一区域3用于有源区域，第二区域2用于电极布线区域或排热结构区域。 半导体器件是半导体激光器，发光二极管，晶体管等。版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2001358082A
公开(公告)日：2001-12-26
申请号：JP2000184522
申请日：2000-06-14
Applicant: SONY CORP
Inventor： NAKAJIMA HIROSHI , KOBAYASHI TOSHIMASA , KIJIMA SATORU
Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer such as a GaN layer grown in excellent crystal having a small number of through dislocations and a semiconductor light emitting device formed through the same. SOLUTION: A groove G having an inner side nearly vertical to the main surface of a substrate is provided to the III-V compound semiconductor substrate such as a GaN substrate, extending in a prescribed direction such as a direction or a direction, and a III-V compound semiconductor layer such as a GaN layer is made to grow through a vapor growth method under conditions that a growth rate in the direction of the main surface of the substrate 30 is set faster than that in the direction vertical to the main surface of the substrate 30. Before a vapor growth is carried out, mask layers (33a and 33b) may be formed on the surface of the substrate 30 except the base of the groove G and a groove G forming region.
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Patent Agency Ranking
公开(公告)号：JP2000307184A
公开(公告)日：2000-11-02
申请号：JP11545199
申请日：1999-04-22
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA , NAGANUMA KO
IPC: H01L21/302 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/3065 , H01L21/336 , H01L29/78 , H01L33/00 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/028 , H01S5/042 , H01S5/323
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element by which adhesion between a semiconductor layer and an electrode can be improved and, at the same time, the contact resistance between them can be reduced. SOLUTION: After an insulating layer 18 is formed by vapor deposition, etc., and a resist film 19 is formed on the whole surface of the layer 18, an opening is formed through the resist film 19 correspondingly to the pattern of a p-side electrode. Since the residue of the resist tends to adhere to the opening at the time of forming the opening, the residue is removed by performing a light ashing treatment by using oxygen while a p-side contact layer 17 is protected by means of the insulating layer 18. Thereafter, the opening 18a of the insulating layer 18 and the p-side electrode are formed in a self- aligning way by using the resist film 19 as a mask. Therefore, the damage to the surface of the contact layer 17 can be reduced and the p-side electrode can be formed on the clean surface of the layer 17.
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公开(公告)号：JPH11126947A
公开(公告)日：1999-05-11
申请号：JP29303597
申请日：1997-10-24
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA , MIYAJIMA TAKAO , OZAWA MASABUMI
IPC: H01L33/32 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/042 , H01S5/323 , H01S5/343 , H01S3/18 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element in which the adhesion of electrodes can be improved. SOLUTION: An n-side contact layer 13, an n-type clad layer 14, an active layer 15, a p-type clad layer 16, and a p-side contact layer 17 which are respectively made of III nitride compound semiconductors are successively laminated upon a sapphire substrate 10. In addition, a P-side electrode 19 is formed on the p-side contact layer 17 through the opening 18a of an insulating film 18 and an electrode 20 for contact is formed on the p-side electrode 19 and insulating layer 18 so as to cover the entire surface of the electrode 19. The electrode 19 is composed of a metal containing Ni and the electrode 20 is composed of another metal containing Ti. An ohmic contact is secured by means of the electrode 19 and the adhesibility of the electrode 19 is reinforced by means of the electrode 20.
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公开(公告)号：JPH08197760A
公开(公告)日：1996-08-06
申请号：JP3138595
申请日：1995-01-27
Applicant: SONY CORP
Inventor： SATO SHUJI , KOBAYASHI TOSHIMASA
Abstract: PURPOSE: To easily position a substrate material and an evaporation structure to certainly attach them by a recording apparatus formed of a frame member in such a state that the bottom surface of a recording material housing part is positioned at the height level equal to the surface of the substrate material provided to the recording material housing part. CONSTITUTION: Since a printing head 70 is constituted so that the bottom surface of a dye housing part is positioned at the height level equal to the surface of a heat insulating material provided with a porous structure 81 and three lateral sides of the heat insulating material 66 provided with the porous structure especially excepting a dye introducing port are in close contact with or integrated with a spacer 62, even when the size of an evaporation part 17 becomes small, the porous structure is lowered in height itself to be provided within a frame member. Especially, the side surface of the heat insulating material 66 is supported by the spacer 62 to be set to a positionally prescribed state. Therefore, the heat insulating material 66 is easily positioned at the time of attachment and can be certainly attached. Even if the heat insulating material becomes small, the height of the porous structure is reduced and, in such a state that the heat insulating material 66 is supported by the spacer 62, yield and reliability are enhanced and cost reduction is achieved.
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公开(公告)号：JPH08142359A
公开(公告)日：1996-06-04
申请号：JP31596594
申请日：1994-11-25
Applicant: SONY CORP
Inventor： SATO SHUJI , KOBAYASHI TOSHIMASA
Abstract: PURPOSE: To eliminate damage during handling or processing and to increase the strength of a processed part to enhance reliability by integrally providing a recording material flying structure on a recording material supply structure part. CONSTITUTION: Heat of 50-500 deg.C is generated in a heating element 75 by the supply of a current and a liquefied dye 22 is heated by this heat to be evaporated. Since a spacer 82 composed of quartz glass is integrally provided under an insulating plate 73, the spacer 82 acts as a heat insulating material and the heat due to the heating element 75 is hardly dissipated. The supply passage 84 of the liquefied dye 22 is formed to the spacer 82 and opened to the bottom surface of a dye housing part 87 as a dye introducing port 84'. Since an insulating plate 73 is integrated on the spacer 82, this integrated structure becomes thick to be increased in mechanical strength. Therefore, mechanical strength at the time of the processing of the dye housing part 87, a small pillar element 80 and the dye passage 84 becomes sufficient and a crack or destruction is not generated and handling properties, processability or reliability can be enhanced.
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公开(公告)号：JPH07211989A
公开(公告)日：1995-08-11
申请号：JP2219894
申请日：1994-01-21
Applicant: SONY CORP
Inventor： KOBAYASHI TOSHIMASA , MATSUDA OSAMU
Abstract: PURPOSE:To provide a multi-beam laser which can be improved in fraction non-defective and a laser beam printer using the laser. CONSTITUTION:A multi-beam laser 1 is constituted by arranging light emitting bodies 11, 12, 13,..., n, of which at least one is composed of a plurality of light emitting elements 21, on one platy substrate 10 or mounting the substrate 10 on one holding substrate. In addition, the light emitting elements 21 constituting the light emitting bodies 11, 12, 13,..., n are caused to emit light in the unit of light emitting elements corresponding to two independent exciting electrodes. A laser beam printer uses the laser 1 as a light source.
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