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公开(公告)号：JP2002220213A
公开(公告)日：2002-08-09
申请号：JP2001010168
申请日：2001-01-18
Applicant: SONY CORP
Inventor： NAKAO ISAMU , KOJIMA SHIGERU
IPC: C01B21/06
Abstract: PROBLEM TO BE SOLVED: To provide a method for easily synthesizing an IIIB family nitrogen compound at a reduced manufacturing cost. SOLUTION: This method is to synthesize gallium nitride by thermal cracking of Tris (dimethylamino) Gallium in trioctylamine. The obtained gallium nitride is a fine particle whose size is smaller than 4 times the Bohr radius of an exciton.
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公开(公告)号：JP2000196192A
公开(公告)日：2000-07-14
申请号：JP37657198
申请日：1998-12-24
Applicant: SONY CORP
Inventor： SHIRAI KATSUYA , KOJIMA SHIGERU , TODA ATSUSHI , MORI YOSHIFUMI
Abstract: PROBLEM TO BE SOLVED: To provide a fine particle structure body for preventing aggregation, a light-emitting device using it, and a method for manufacturing the fine particle structure body. SOLUTION: A fine particle structure body is provided with a plurality of fine particles 11, made of ZnO or the like, and each of the fine particles 11 is connected to one another in a network form by a crosslinking part 12. More specifically, the crosslinking part 12 that exists among particles becomes a support part, thus preventing the fine particles 11 from being aggregated. Each of the fine particles 11 is composed of a fine crystal with a crystal particle diameter of 100 nm or less and has an inter-band luminous function and a donor acceptor pair luminous function. This sort of fine particle structure body is used as a material for composing the luminous part of a light-emitting device. The fine particle structure body is manufactured by applying a voltage between positive and negative electrodes with pure water as an electrolyte, a highly pure Zn plate as the positive electrode, and a semiconductor substrate as the negative electrode.
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公开(公告)号：JPH09120593A
公开(公告)日：1997-05-06
申请号：JP6569796
申请日：1996-03-22
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO , MACHIDA AKIO , KOJIMA SHIGERU
IPC: G01Q60/10 , G01Q60/30 , G01Q80/00 , G11B9/00 , G11B9/02 , G11B9/06 , G11B9/08 , G11B9/14 , G11B11/08
Abstract: PROBLEM TO BE SOLVED: To obtain an excellent high density recording and reproducing device by reproducing information recorded by a head under the state of noncontact with a recording medium in a prescribed area in detecting a changing quantity of electric charge or capacitance or surface potential. SOLUTION: A recording head HR is composed of a leaf spring in a narrowplate shape or the like formed with an acicular electrode 21 in a conical shape, a triangular pyramidal shape or prismatic shape having a cross section of a triangle, etc., at the tip, capable of point contact or microarea contact with the recording medium, and is constituted of a cantilever 22 whose one end is fixed. This cantilever 22 consists of Si of a spring constant 0.01 to 10N/m or SiN, and high electric conductivity is imparted to the cantilever by coating its surface with a metal layer or metal layers in a single layer or multilayer structure of Au, Pt, Co, Ni, Ir, Cr, etc. The recording medium 10 is placed on a placing base 30, and is moved, for instance, in the directions of x-axis y-axis, which are orthogonal to each other or is rotated, while the placing base 30 is controllable of moving in the direction of z-axis which is perpendicular to the surface direction of the recording medium 10, so as to adjust a state of contact with the acicular electrode 21.
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公开(公告)号：JPS63184319A
公开(公告)日：1988-07-29
申请号：JP24108986
申请日：1986-10-09
Applicant: SONY CORP
Inventor： TOMITA TAKASHI , KOJIMA SHIGERU , USUI SETSUO
IPC: H01L21/20 , H01L21/263
Abstract: PURPOSE:To suppress an aggregating phenomenon during recrystallization through good wettability between SiO2 film and a semiconductor thin film by forming an SiO2 film on the surface of the semiconductor thin film and conducting heat treatment in an oxygen atmosphere or a nitrogen atmosphere prior to recrystallization by energy irradiation. CONSTITUTION:A polycrystaline silicon thin film 22 is formed by the CVD method on a quartz substrate 21 and an SiO2 film 25 is then formed by the CVD method thereon. Next, an SiO2 film 26 is formed by the plasma CVD method on the CVD SiO2 film 25 to prepare a sample 27. This sample 7 is then annealed at 1000 deg.C for 200 minutes in an oxygen atmosphere and the polycrystal silicon thin film 22 is melted for recrystallization by the zone melting method using a graphite strip heater. According to this method, in the zone melt recrystallization in an SiO2 film/Si thin film/SiO2 film (thermal oxidation) or a quartz substrate structure, the aggregation phenomenon of silicon film can be suppressed, and as a result a so-called SOI substrate of high quality can be prepared.
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公开(公告)号：JPS61289617A
公开(公告)日：1986-12-19
申请号：JP13076485
申请日：1985-06-18
Applicant: SONY CORP
Inventor： KANO YASUO , KOJIMA SHIGERU , USUI SETSUO
IPC: H01L21/20 , C30B13/00 , C30B13/24 , C30B13/28 , H01L21/263
Abstract: PURPOSE:To detect the fused state of a semiconductor layer by a method wherein, when the semiconductor layer is fused by projecting an energy beam, the radiant light to be emitted from the semiconductor layer is imaged. CONSTITUTION:The incident angles of two beams of an energy beam (melting beam) 21 and a preheating beam 22 are respectively changed and the two beams 21 and 22 are made to incide in a lens 6 and are projected on a sample 1. As the polycrystalline silicon film, which is made its temperature rise, emits radiant light, the radiant light is enlarged by a microscope 4, is imaged by a TV camera, which is the imaging means, and is displayed on a monitoring TV 5. At this time, as laser beam having a powerful intensity also incides in the imaging means 3 (TV camera) through the microscope 4, an Ar laser beam cutting filter 32 is set in before the imaging means 3 so that the radiant light only comes into the TV camera 3. Moreover, for viewing simultaneously the pattern configuration and the part heated with the beam 22, a high-speed shutter 31, which synchronizes with the imaging means 3, is set in before the microscope 4. By this constitution, the radiant light to be emitted from the part heated with the laser beam 22 is intensified along with the temperature of the heated part, but once the part fuses, the intensity of the radiant light drops and the boundary between the solid phase part and the liquid phase part is distinctly identified.
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Patent Agency Ranking
公开(公告)号：JPS61288413A
公开(公告)日：1986-12-18
申请号：JP13046985
申请日：1985-06-15
Applicant: SONY CORP
Inventor： KANO YASUO , KOJIMA SHIGERU , USUI SETSUO
IPC: H01L21/20 , H01L21/263 , H01L21/84
Abstract: PURPOSE:To obtain the title thin film having the (100) plane direction and excellent flatness and to prevent the generation of cracks therein by a method wherein, after a film layer is formed on the polycrystalline semiconductor film in which specific impurities are introduced, the polycrystalline semiconductor film is fused by heating, and a recrystallizing process is performed. CONSTITUTION:The oxygen (O) atoms, which are introduced while a film is being grown, of 5X10 cm are distributed in the average density of the entire film on the crystal grain boundary 2b between the crystal grains 2a located in the polycrystalline Si film 2 formed on a quartz substrate 1. Then, an SiO2 film 3 of 3000Angstrom or thereabout in thickness, which constitutes a cap layer, is formed on the polycrystalline Si film by performing a CVD method. Subsequently, the polycrystalline Si film 2 is fused and recrystallized by scanningly projecting a laser beam 4 emitted from an Ar laser on the substrate. As a result, a single crystal Si film 5 is formed. The single crystal Si film 5 formed as above-mentioned has the (100) plane direction. Also, as a recrystallising process is performed under the condition wherein the SiO2 film 3 is formed as a cap layer, the obtained single crystal Si film 5 has a flat surface, and almost no cracks are generated thereon.
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公开(公告)号：JP2003323150A
公开(公告)日：2003-11-14
申请号：JP2002128609
申请日：2002-04-30
Inventor： KOJIMA SHIGERU
IPC: G09G3/294 , G09G3/20 , G09G3/288 , G09G3/291 , G09G3/296 , G09G3/298 , H01J11/12 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/38 , H01J11/50 , H04N5/66 , G09G3/28 , H01J11/02
Abstract: PROBLEM TO BE SOLVED: To provide the driving method of a plasma display device capable of stabilizing discharge.
SOLUTION: A sustaining pulse 31 which has a rising time t
0 and which rises steeply is applied on a scanning line 17Y as a first pulse. It is favorable to make the sustaining pulse 31 rise steeply as much as possible and the rising time t
0 is made to be equal to or smaller than 200 ns. Continually, a sustaining pulse 32 which rises in a rising time t
1 (t
1 >t
0 ) which is longer than that of the sustaining pulse 31 is alternatively supplied on electrodes 17X, 17Y. The value of the rising time t
1 is set so as to prolong a discharge delay time to the extent to which the recovering of electric power is sufficiently possible.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：提供能够稳定放电的等离子体显示装置的驱动方法。 解决方案：具有上升时间t
0 且急剧上升的维持脉冲31作为第一脉冲施加在扫描线17Y上。 有利的是使维持脉冲31尽可能地急剧上升，使上升时间t 0 等于或小于200ns。 持续地，在维持时间长的上升时间t 1（t SB> 1 > t 0 ）上升的维持脉冲32。 脉冲31交替地供给在电极17X，17Y上。 上升时间t 1 的值被设定为将放电延迟时间延长到能够充分恢复电力的程度。 版权所有（C）2004，JPO -
公开(公告)号：JP2003130821A
公开(公告)日：2003-05-08
申请号：JP2002204071
申请日：2002-07-12
Applicant: SONY CORP
Inventor： MAEKAWA ITARU , KUDO YOSHIHIRO , KOJIMA SHIGERU , KAWATO SEIJI
Abstract: PROBLEM TO BE SOLVED: To measure a strain in a crystal at high positional resolution. SOLUTION: A positional change in intensity of a diffracted X-ray from the sample crystal 6 is detected via an X-ray image magnifying crystal 10 fixed within a diffraction angle range, using an optical system of an X-ray topograhpy arranged with the X-ray image magnifying crystal 10 in a rear stage of the sample crystal 6 of which the strain is measured. The positional change of the diffracted X-ray intensity found based on a X-ray topograph provided by the X-ray image magnifying crystal 10 is converted into a shift of a Bragg angle in the sample crystal 6.
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公开(公告)号：JPH10289495A
公开(公告)日：1998-10-27
申请号：JP9598997
申请日：1997-04-14
Applicant: SONY CORP
Inventor： KOJIMA SHIGERU
Abstract: PROBLEM TO BE SOLVED: To provide a recording and reproducing device capable of prolonging the service life of a head without wearing an acicular electrode and performing high density recording at high speed. SOLUTION: In this recording and reproducing device for recording or reproducing information by a head HR consisting of the acicular electrode 21, information is recorded by electric charges movement of the prescribed region of an information recording medium 10 of inversion of polarization by applying voltage from the head HR in a state where the head HR is in non-contact with the information recording medium 10, and a reproducing head reproduces information recorded in the prescribed region in a state where the head is in non- contact with the information recording medium 10.
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公开(公告)号：JPH06229954A
公开(公告)日：1994-08-19
申请号：JP25948093
申请日：1993-09-22
Applicant: SONY CORP
Inventor： MAEKAWA ITARU , KUDO YOSHIHIRO , KOJIMA SHIGERU , KAWATO SEIJI
IPC: G01N23/207
Abstract: PURPOSE:To accurately and easily measure distortion in a crystal and with a high position resolution. CONSTITUTION:The diffraction X-ray intensity curve of a sample crystal 6 is measured by using the optical system of an X-ray topography, the part of the low-angle side is approximated by an exponential function, and then the original diffraction X-ray intensity curve is plotted again by using the logarithmic function which is the inverse function of the function, thus enabling the relationship between the X-ray incidence angle and the change in the diffraction X-ray intensity to be linear. Then, the change rate of the change in the diffraction X-ray intensity which is linear to the X-ray incidence angle is obtained from the inclination of the plotted curve and then two constituents (DELTAd/d, DELTAalpha) of distortion in a sample crystal 6 are obtained by calculated using the change rate. An X-ray topography optical system where a crystal for enlarging an X-ray image is laid out at the later stage of the sample crystal 6 is used to enhance the position resolution for measuring distortion.
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