中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

37 records (took 0.023 seconds)

    SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    31.
    发明专利
    SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效

    公开(公告)号：JPH11126947A

    公开(公告)日：1999-05-11

    申请号：JP29303597

    申请日：1997-10-24

    Applicant: SONY CORP

    Inventor： KOBAYASHI TOSHIMASA ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI

    IPC: H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element in which the adhesion of electrodes can be improved. SOLUTION: An n-side contact layer 13, an n-type clad layer 14, an active layer 15, a p-type clad layer 16, and a p-side contact layer 17 which are respectively made of III nitride compound semiconductors are successively laminated upon a sapphire substrate 10. In addition, a P-side electrode 19 is formed on the p-side contact layer 17 through the opening 18a of an insulating film 18 and an electrode 20 for contact is formed on the p-side electrode 19 and insulating layer 18 so as to cover the entire surface of the electrode 19. The electrode 19 is composed of a metal containing Ni and the electrode 20 is composed of another metal containing Ti. An ohmic contact is secured by means of the electrode 19 and the adhesibility of the electrode 19 is reinforced by means of the electrode 20.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    33.
    发明专利
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效

    公开(公告)号：JPH09129983A

    公开(公告)日：1997-05-16

    申请号：JP31007895

    申请日：1995-11-02

    Applicant: SONY CORP

    Inventor： OZAWA MASABUMI ,  HIEI FUTOSHI

    IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/44 ,  H01L33/60 ,  H01S5/00 ,  H01S5/028 ,  H01S5/327 ,  H01S3/18 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To reduce the light absorbing quantity of a reflectivity control film containing at least one II-VI compound semiconductor film so as to suppress the generation of heat from a semiconductor light emitting element by providing the control film in a light emitting section on the light emitting surface of the element. SOLUTION: A reflectivity control film is constituted in a multilayered film composed of dielectric films and II-VI compound semiconductor films. The dielectric films are made of SiO2 , Al2 O3 , etc., having a low refractive index and respectively form coating materials 1, 5, and 7. The II-VI compound semiconductor films are made of ZnSe, etc., having a high refractive index and respectively form coating materials 2, 4, and 6. In order to reduce the laminating cycle of the multilayered film as much as possible and to obtain high reflectivity, the material having a high refractive index is used. Therefore, the characteristics and reliability of a semiconductor light emitting element are improved by suppressing the heat generation caused by absorbed light by preventing the useless light absorption of the reflectivity control film.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    34.
    发明专利
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效

    公开(公告)号：JPH09121073A

    公开(公告)日：1997-05-06

    申请号：JP29891495

    申请日：1995-10-24

    Applicant: SONY CORP

    Inventor： TOMITANI SHIGETAKA ,  OZAWA MASABUMI ,  ITO SATORU ,  IKEDA MASAO

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a low operating voltage and a long service life using a highly reliable II-VI compound semiconductor. SOLUTION: A p-type Alx Ga1-x As buffer layer 2 and a p-type (Alx Ga1-x )y In1-y buffer layer 3 are formed sequentially on a p-type GaAs substrate 1 and then II-VI compound semiconductor layers, i.e., a p-type ZnSe buffer layer 5, a p-type ZnMeSSe clad layer 7, a p-type ZnSSe optical waveguide layer 8, a ZnCdSe active layer 9, an n-type ZnSSe optical waveguide layer 10, an n-type ZnMgSSe clad layer 11, etc., are formed thereon to constitute a semiconductor light emitting element. In this regard, a p-type GaAs crystal defect suppression layer 4 is provided between the p-type (Alx Ga1-x )y In1-y buffer layer 3 and p-type ZnSe buffer layer 5.

    MANUFACTURE OF II-VI COMPOUND SEMICONDUCTOR ELEMENT
    36.
    发明专利
    MANUFACTURE OF II-VI COMPOUND SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JPH06310811A

    公开(公告)日：1994-11-04

    申请号：JP9783793

    申请日：1993-04-23

    Applicant: SONY CORP

    Inventor： OZAWA MASABUMI ,  NAKAYAMA NORIKAZU ,  KOBAYASHI TOSHIMASA ,  MIYAJIMA TAKAO ,  NARUI FUMIYO

    IPC: H01L33/04 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

    Abstract: PURPOSE:To make it possible to manufacture a target II-VI compound semiconductor element reliably and stably by a method wherein a treatment temperature accompanied by a heating in a process of manufacturing the II-VI compound semiconductor element is selected at a specified or lower temperature. CONSTITUTION:A first clad layer 2 consisting of a ZnMgSSe layer of the same conductivity type as that of a first conductivity type substrate 1, an active layer 3 consisting of an undoped or low-impurity concentration Zn(Cd)Se layer, a second clad layer 4 consisting of a second conductivity type ZnMgSSe layer and a cap layer 5 consisting of a superlattice structure, which consists of a thin ZnSe layer and a thin ZnTe layer, are epitaxially grown in order on the first conductivity type substrate 1, such as a GaAs substrate, by an MBE method. In this case, a heating treatment temperature accompanied by the manufacture of a laser is restricted to 400 deg.C or lower. The blue light laser obtained in such a way can be formed in prescribed characteristics stably and reliably.

Patent Agency Ranking