公开(公告)号：JP2002254248A

公开(公告)日：2002-09-10

申请号：JP2001056027

申请日：2001-02-28

Applicant: SONY CORP

Inventor： SATO SHUZO ,  YASUDA YOSHIYA ,  ISHIHARA SHIGEO ,  OTORII SUGURU ,  NOGAMI TAKESHI ,  KOMAI HISANORI

IPC: B23H3/00 ,  B24B7/22 ,  B24B21/04 ,  B24B37/04 ,  B24B57/02 ,  C25F7/00 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide an electrochemical machining device capable of readily easing or smoothing initial ruggedness and controlling damage to a metal film with excellent removal efficiency for extra metal films. SOLUTION: The electrochemical machining device is the one that performs electrolytic removal machining to a workpiece W having a metal film on a side to be machined, and comprises, a workpiece holding means 42 that holds the workpiece W, a wiper 24 wiping out the workpiece surface, an electrolyte solution supply means supplying an electrolyte solution EL onto the workpiece surface, a first electrode 23 arranged at a position opposed to the workpiece surface, a second electrode 27 arranged at the peripheral part of the workpiece surface and a power supply 61 supplying a current between the second electrode and the first electrode on the workpiece surface.

公开(公告)号：JP2001244236A

公开(公告)日：2001-09-07

申请号：JP2000056010

申请日：2000-02-28

Applicant: SONY CORP

Inventor： SATO SHUZO ,  YUBI HIROSHI

IPC: C25F3/00 ,  C25F3/12 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/3205 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for removing a conductor by using a charged particle beam that can remove a conductor layer without generating dishing or the like, and can be applied also to a low-dielectric material as an insulation film material since no high pressure is applied to the insulation film on the lower of the conductor layer. SOLUTION: A substrate to be treated where one portion of conductor layers (30, 32) such as a barrier metal layer 30 is exposed at least on a surface to be treated is dipped into treatment liquid containing a charged fine particle 49, and an electrode 44 is arranged so that it opposes the surface in the treatment liquid. Then, a specific voltage such as a DC pulse voltage is applied between the electrode 44 and a conductor layer so that the conductor layer is brought to a high potential or a low potential when a fine particle magnetized negatively and positively is used, thus allowing the fine particle to hit against the conductor layer and removing at least one portion (battier metal layer 30) of the conductor layer of collusion.

公开(公告)号：JPH10294357A

公开(公告)日：1998-11-04

申请号：JP10451497

申请日：1997-04-22

Applicant: SONY CORP

Inventor： SATO SHUZO ,  OTORII SUGURU ,  OKAWA KOJI

IPC: H01L21/683 ,  H01L21/027 ,  H01L21/304 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To support a semiconductor wafer so that its surface may be a master by correcting asperities on the surface. SOLUTION: An opening of a chamber 3 is covered with a supporting plate 7. The chamber 3 is filled with vibration-liquefiable substance 8 consisting of particles 8a and liquid (liquid resin) 8b. A wafer 9 is adhered to the surface of the supporting plate 7. In normal times, the vibration-liquefiable substance 8 is maintained in a solid state and supports the supporting plate 7. When the vibration-liquefiable substance 8 is subjected to vibration, it is liquefied and flows. The flat surface 1 as master of a pressing part 10 is pressed onto the surface of the wafer 9 and vibration is stopped.

公开(公告)号：JPH10244468A

公开(公告)日：1998-09-14

申请号：JP4878597

申请日：1997-03-04

Applicant: SONY CORP

Inventor： SATO SHUZO ,  OTORII SUGURU

IPC: B24B57/02 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To perform uniform polishing by a small quantity of abrasive by supplying the abrasive in an atomized state to a work object surface in a fixed injection quantity. SOLUTION: A surface plate 11 is rotated, and an abrasive 16 is supplied in an atomized state onto a polisher 12 from an abrasive supply part 15. A workpiece 13 is pressed against the polisher 12 under prescribed pressure, and is polished. A first negative pressure generating part 25 sucks the abrasive 16 is a tank 18 through a suction nozzle 21 and a first flow regulating value 22. It is mixed with the atmosphere taken in through a section flow regulating value 27, and is formed as a lean atomized abrasive 16, and is outputted to a second negative pressure generating part 30. The second negative pressure generating part 30 similarly mixes it with a constant quantity of high pressure air from a third flow regulating valve 32, and makes it leaner, and injects it into the polisher 12. By this constitution, uniform polishing can be performed.

公开(公告)号：JPH10156707A

公开(公告)日：1998-06-16

申请号：JP31473896

申请日：1996-11-26

Applicant: SONY CORP

Inventor： SATO SHUZO

IPC: B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To make dry machining possible so as to dispense with slurry waste disposal and chemical resistance treatment of a device by forming pellet of powder that is softer than a workpiece and can generate solid phase reaction to the workpiece, and sticking this pellet to a polishing base to polish the work piece with the powder as abrasive grains. SOLUTION: In the case of executing this method to a dry polishing wheel for a silicon wafer or the like, fine grain of SiO2 , CeO2 , or the like which is softer powder than silicon dioxide (SiO2 ) to be flattened is used as powder to be pellet. Pellet 1 formed of powder used as abrasive grains is arranged in segment shape on the polishing face of a polishing base 2, and the polishing base 2 is stuck to a wheel base metal 3. Accordingly, even though there is a large swell on the wafer face, the polished surface of a workpiece 10, this swell can be absorbed by deformation of the soft polishing base 2, so that uniform polishing force is applied to the wafer, and the whole surface can be flattened satistactorily.

公开(公告)号：JPH10135316A

公开(公告)日：1998-05-22

申请号：JP28450396

申请日：1996-10-28

Applicant: SONY CORP

Inventor： SATO SHUZO ,  OTORII SUGURU ,  KOMURO YOSHIAKI

IPC: B23Q3/08 ,  H01L21/304 ,  H01L21/68 ,  H01L21/683

Abstract: PROBLEM TO BE SOLVED: To obtain a vacuum chuck table apparatus capable of chucking a thin substrate at a high accuracy, without edge deforming or swelling of the periphery of the substrate such as semiconductor wafer. SOLUTION: A vacuum chuck table apparatus 1A comprises a porous vacuum sucking part 21 buried in a central portion of a stage 22, having an annular groove 24 at a periphery 23. While feeding pure water through a feed pipe 25 from a feed tank 31 into the annular groove 24, a semiconductor wafer S mounted on the stage 22 is sucked, chucked and held by the sucking part 21. The periphery of the wafer S is sealed with pure water overflowing from the annular groove 24 to prevent a working liq. E from flowing between the wafer S and sucking part 21, thereby vacuum chucking the wafer S at a high accuracy.

公开(公告)号：JPH1076439A

公开(公告)日：1998-03-24

申请号：JP23073596

申请日：1996-08-30

Applicant: SONY CORP

Inventor： SATO SHUZO ,  OTORII SUGURU

IPC: B23Q3/08 ,  H01L21/304 ,  H01L21/68 ,  H01L21/683

Abstract: PROBLEM TO BE SOLVED: To improve uniformity of height within a surface on the surface of a semiconductor wafer. SOLUTION: A device comprises a chuck table 2 having plural blocks of vacuum suction stages 3 disposed on an elastic vacuum stage base 4, and a fine displacement adjusting table 11 having plural fine displacement adjusting units 13 disposed on a fine displacement adjusting base 12 which are provided to correspond to the respective vacuum suction stages 3 to vertically move separately from each other for pushing the stage base 4 from the back surface.

公开(公告)号：JPH0970750A

公开(公告)日：1997-03-18

申请号：JP22974195

申请日：1995-09-07

Applicant: SONY CORP

Inventor： SATO SHUZO ,  KOMURO YOSHIAKI

IPC: B24B37/04 ,  B24B37/30 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a substrate polishing device which can improve uniformity in a face and prolong the service life of a polishing pad simultaneously when a substrate is polished. SOLUTION: It is a substrate polishing device which performs polishing treatment by pressing a substrate 31 which is attached adhesively and held by a chuck plate 24 of a polishing head 3 against a surface of a polishing pad which is stretched on a polishing plate with the predetermined polishing pressurizing force. It is provided with a chuck face compensation mechanism consisting of a chamber 26 formed on the opposite side to a substrate hold face of the chuck plate 24 and an air supply and exhaust device 30 which changes air pressure in the chamber 26 through an air supply and exhaust port 28 communicating with the chamber 26 so that the chuck plate 24 is elastically and forcedly deformed in the direction of polishing and pressurization in accordance with the shape of the surface of the polishing pad.

公开(公告)号：JPH05318215A

公开(公告)日：1993-12-03

申请号：JP15608392

申请日：1992-05-22

Applicant: SONY CORP

Inventor： SATO SHUZO

IPC: B23B47/26

Abstract: PURPOSE:To provide a vertical shaft device in which the weight of the vertical shaft moving parts is always balanced with the weight of a counterweight by means of a simple constitution. CONSTITUTION:The weight of a counterweight is fine adjusted by a deadweight for adjustment 18 in accordance with the weight of the vertical shaft moving parts 2, 3, 4, 7, 8 so as to cancel the weight of the shaft moving parts, and thereby the weight of the counterweight is always balanced with these moving parts 2, 3, 4, 7, 8.

公开(公告)号：JP2006133723A

公开(公告)日：2006-05-25

申请号：JP2005049885

申请日：2005-02-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HORIKOSHI HIROSHI ,  SATO SHUZO ,  OTORII SUGURU ,  OTANI EIJI ,  UENO SHUNEI

IPC: G02B6/122 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide an easy manufacturing method of a light guide module and an optoelectric hybrid device, and also provide a highly reliable light guide module and an optoelectric hybrid device realized by this manufacturing method. SOLUTION: This manufacturing method of a light guide module has a step of forming a light guide layer 3 on a silicon substrate 2, a step of forming a recess 6 by partly removing the light guide layer 3, and a step of forming a photodetector constituting layer in the recess 6. The light guide module 1 is obtained by this manufacturing method. The manufacturing method of an optoelectric hybrid device forms a semiconductor layer 13 on a substrate 2 including a light guide layer 3 and a photodetector 4 through an insulation film 12 in a light guide module 1 obtained by the above manufacturing method. The optoelectric hybrid device 14 is obtained by this manufacturing method. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供导光模块和光电混合装置的简单制造方法，并且还提供通过该制造方法实现的高可靠性导光模块和光电混合装置。 解决方案：这种导光模块的制造方法具有在硅基板2上形成导光层3的步骤，通过部分去除导光层3形成凹部6的步骤，以及形成 通过该制造方法得到光导模块1。 光电混合器件的制造方法通过上述制造方法得到的光导模块1中的绝缘膜12在包括导光层3和光电检测器4的基板2上形成半导体层13。 通过该制造方法获得光电混合装置14。 版权所有（C）2006，JPO＆NCIPI