公开(公告)号：DE69621017D1

公开(公告)日：2002-06-06

申请号：DE69621017

申请日：1996-10-04

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  MARANGON MARIA SANTINA

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L29/66 ,  H01J1/30

公开(公告)号：DE69325809T2

公开(公告)日：1999-12-09

申请号：DE69325809

申请日：1993-11-24

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  PIO FEDERICO

IPC: G11C17/00 ,  G11C16/06 ,  G11C16/12 ,  G11C16/30 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: A method for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device provides for charging a capacitor (C;C1-Cn) to a positive high voltage by connecting, through first switching means (TX,TY;TE1-TEn,TF1-TFn), a first plate (A;A1-An) of the capacitor (C;C1-Cn) to a positive high-voltage supply (Vpp) and connecting, through second switching means (TB;TZ;TD1-TDn), a second plate (B;B';B1-Bn) of the capacitor (C;C1-Cn), which is also operatively connected to the control gate of at least one memory cell, to a reference voltage supply (GND), and for successively connecting, through said first switching means (TX,TY;TE1-TEn,TF1-TFn) the first plate (A;A1-An) of the capacitor (C;C1-Cn) to the reference voltage supply (GND) and disconnecting the second plate (B;B';B1-Bn) of the capacitor (C;C1-Cn) from the reference voltage supply (GND) to obtain a negative voltage on said second plate (B;B';B1-Bn) voltage.

公开(公告)号：DE69230025D1

公开(公告)日：1999-10-28

申请号：DE69230025

申请日：1992-11-10

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/485