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公开(公告)号：US20210359146A1
公开(公告)日：2021-11-18
申请号：US17288828
申请日：2019-10-25
Applicant: University of Houston System
Inventor： Venkat Selvamanickam , Yongkuan Li , Ying Gao
IPC: H01L31/0392 , H01L39/24 , C30B25/18 , H01L21/02
Abstract: A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost.
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公开(公告)号：US10991836B2
公开(公告)日：2021-04-27
申请号：US16085422
申请日：2017-03-15
Applicant: University of Houston System
Inventor： Venkat Selvamanickam
IPC: H01L31/0392 , C30B23/02 , C30B29/06 , C30B29/08 , C30B29/42 , H01L31/0224 , B32B19/00 , B32B9/04 , C30B25/18 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/0216 , H01L31/028 , H01L31/0304 , H01L31/18
Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a polycrystalline or amorphous substrate. An electrically conductive Ion Beam-Assisted Deposition (IBAD) template layer is positioned above the substrate. At least one electrically conductive hetero-epitaxial buffer layer is positioned above the IBAD template layer. The at least one buffer layer has a resistivity of less than 100 μΩcm. The semiconductor device and method foster the use of bottom electrodes thereby avoiding complex and expensive lithography processes.
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公开(公告)号：US20200350100A1
公开(公告)日：2020-11-05
申请号：US16930529
申请日：2020-07-16
Applicant: The University of Houston System
Inventor： Goran Majkic , Venkat Selvamanickam
IPC: H01B12/06 , H01B13/00 , C23C16/02 , H01L39/24 , C23C16/40 , C23C16/54 , C23C16/448 , H01B13/008
Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.
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公开(公告)号：US10777408B2
公开(公告)日：2020-09-15
申请号：US16060878
申请日：2016-12-08
Applicant: University of Houston System
Inventor： Venkat Selvamanickam , Pavel Dutta , Ying Gao
Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm−3.
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公开(公告)号：US10453590B2
公开(公告)日：2019-10-22
申请号：US13907356
申请日：2013-05-31
Applicant: University of Houston System
Inventor： Venkat Selvamanickam
Abstract: Disclosed is a superconducting article comprising a silver overlayer consisting of no more than about 20% of grains over about 1 μm, having a minimum Vickers micro-hardness value of about 100, and a porosity of less than about 1%. A method of manufacturing a superconducting tape is disclosed as comprising, deposition of silver, oxygenation at about 400° C. for about 30 minutes, slitting, deposition of silver at a temperature of less than about 250° C., and application of copper.
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Patent Agency Ranking
公开(公告)号：US20180130575A1
公开(公告)日：2018-05-10
申请号：US15866233
申请日：2018-01-09
Applicant: The University of Houston System
Inventor： Goran Majkic , Venkat Selvamanickam
IPC: H01B12/06 , H01B13/008 , H01B13/00 , C23C16/448 , C23C16/54 , H01L39/24 , C23C16/02 , C23C16/40
CPC classification number: H01B12/06 , C23C16/0209 , C23C16/408 , C23C16/448 , C23C16/545 , H01B13/00 , H01B13/0026 , H01B13/008 , H01L39/2441
Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.
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公开(公告)号：US20160111188A1
公开(公告)日：2016-04-21
申请号：US13935033
申请日：2013-07-03
Applicant: University of Houston System
Inventor： Venkat Selvamanickam
CPC classification number: H01B12/06 , H01B13/0036 , H01L39/143 , H01L39/2464 , H01L39/2467
Abstract: A configuration and a method of constructing a high-temperature superconductor tape including a plurality superconducting filaments sandwiched between a substrate and an overlayer, and having a compliant material extending between the substrate and the overlayer and isolating each superconducting filament.
Abstract translation: 一种构造和包括夹在基底和覆盖层之间的多根超导细丝的高温超导体带的构造和方法，并且具有在衬底和覆盖层之间延伸的顺应性材料并隔离每个超导细丝。
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公开(公告)号：US12256649B2
公开(公告)日：2025-03-18
申请号：US18509125
申请日：2023-11-14
Applicant: University of Houston System
Inventor： Goran Majkic , Venkat Selvamanickam
Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.
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公开(公告)号：US20240172567A1
公开(公告)日：2024-05-23
申请号：US18509125
申请日：2023-11-14
Applicant: University of Houston System
Inventor： Goran Majkic , Venkat Selvamanickam
CPC classification number: H10N60/0632 , H10N60/0464 , H10N60/203 , H10N60/857 , Y02E40/60
Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.
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公开(公告)号：US11881328B2
公开(公告)日：2024-01-23
申请号：US17719317
申请日：2022-04-12
Applicant: University of Houston System , SuperPower, Inc.
Inventor： Venkat Selvamanickam , Yimin Chen
CPC classification number: H01B12/02 , H01B1/026 , H01B9/006 , H10N60/0828 , H10N60/203 , H10N60/857 , H10N60/0632
Abstract: A method and composition for doped HTS tapes having directional flux pinning and critical current.
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