公开(公告)号：US11417519B2

公开(公告)日：2022-08-16

申请号：US17020441

申请日：2020-09-14

Applicant: University of Houston System

Inventor： Venkat Selvamanickam ,  Pavel Dutta ,  Ying Gao

IPC: H01L21/02 ,  H01L29/16

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm−3.

公开(公告)号：US10777408B2

公开(公告)日：2020-09-15

申请号：US16060878

申请日：2016-12-08

Applicant: University of Houston System

Inventor： Venkat Selvamanickam ,  Pavel Dutta ,  Ying Gao

IPC: H01L21/02 ,  H01L29/16

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm−3.