Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2017204525B2

    公开(公告)日:2018-08-23

    申请号:AU2017204525

    申请日:2017-06-30

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    Dispositivos de película fina y fabricación

    公开(公告)号:ES2657115T3

    公开(公告)日:2018-03-01

    申请号:ES12857376

    申请日:2012-12-10

    Applicant: VIEW INC

    Abstract: Un método para fabricar un dispositivo óptico que comprende una o más capas de material que comprende al menos un material ópticamente cambiable intercalado entre una primera y una segunda capa conductora, donde el método comprende: (i) recibir un sustrato que comprende la primera capa conductora sobre su superficie de trabajo; (ii) eliminar la primera capa conductora de una primera área en la periferia del sustrato, donde la primera área tiene un primer ancho a lo largo del perímetro del sustrato y que se extiende entre el 10% y el 90% del perímetro del sustrato; (iii) depositar dichas una o más capas de material del dispositivo óptico y la segunda capa conductora de manera que cubran la primera capa conductora y se extiendan más allá de la primera capa conductora alrededor del perímetro de la primera capa conductora en la primera área en la periferia del sustrato; (iv) eliminar el material hasta el sustrato o una barrera de difusión, si está presente, desde una segunda área en la periferia del sustrato, la segunda área dentro de la primera área, la extracción a lo largo de un segundo ancho, más estrecho que el primer ancho, y sustancialmente a lo largo de todo el perímetro del sustrato; (v) fabricar una parte expuesta de la primera capa conductora eliminando la segunda capa conductora y la una o más capas de material del dispositivo óptico debajo de la misma, que revela así la parte expuesta de la primera capa conductora; y (vi) aplicar una primera barra colectora a la segunda capa conductora en una parte que no cubre la primera capa conductora y aplicar una segunda barra colectora a la parte expuesta de la primera capa conductora, en la que al menos una de la primera y segunda capas conductoras es transparente.

    Defect-mitigation layers in electrochromic devices

    公开(公告)号:AU2017204525A1

    公开(公告)日:2017-07-20

    申请号:AU2017204525

    申请日:2017-06-30

    Applicant: VIEW INC

    Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

    THIN-FILM DEVICES AND FABRICATION
    37.
    发明专利

    公开(公告)号:CA2935687A1

    公开(公告)日:2015-07-09

    申请号:CA2935687

    申请日:2014-12-31

    Applicant: VIEW INC

    Abstract: Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

    THIN-FILM DEVICES AND FABRICATION
    40.
    发明专利

    公开(公告)号:CA2859023A1

    公开(公告)日:2013-06-20

    申请号:CA2859023

    申请日:2012-12-10

    Applicant: VIEW INC

    Abstract: Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

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