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公开(公告)号：US20130300207A1
公开(公告)日：2013-11-14
申请号：US13888301
申请日：2013-05-06
Applicant: LOCKHEED MARTIN CORPORATION
Inventor： Li Leah WANG
IPC: H04B5/00
CPC classification number: H04B5/0037 , B81B7/00 , B81B2201/00 , H04B5/0087
Abstract: Various aspects of the subject technology include a wireless power transmission design based on extended range near-field resonance coupling induction, where magnetic near-field range may be extended by several orders of magnitude. One element that may help to accomplish the near-field extension, in one aspect, is the addition of a transformational magnetic lens to the transmitter. The magnetic lens may be made of metamaterials with refractive index of for example, −1. It may recover and collimate the near-field evanescent, magnetic flux, effectively extending the near-field coupling distance by several orders of magnitude.
Abstract translation: 主题技术的各个方面包括基于扩展范围近场共振耦合感应的无线电力传输设计，其中磁场近场范围可以扩展几个数量级。 在一个方面，可以帮助实现近场延伸的一个元件是向变送器添加变换磁性透镜。 磁性透镜可以由折射率为例如-1的超材料制成。 它可以恢复和准直近场ev逝，磁通量，有效地将近场耦合距离延伸几个数量级。
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公开(公告)号：WO2013169708A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/039845
申请日：2013-05-07
Applicant: LOCKHEED MARTIN CORPORATION
Inventor： WANG, Li Leah
IPC: H04B5/00
CPC classification number: H04B5/0037 , B81B7/00 , B81B2201/00 , H04B5/0087
Abstract: Various aspects of the subject technology include a wireless power transmission design based on extended range near-field resonance coupling induction, where magnetic near-field range may be extended by several orders of magnitude. One element that may help to accomplish the near-field extension, in one aspect, is the addition of a transformational magnetic lens to the transmitter. The magnetic lens may be made of metamaterials with refractive index of, for example, -1. It may recover and collimate the near-field evanescent magnetic flux, effectively extending the near-field coupling distance by several orders of magnitude.
Abstract translation: 主题技术的各个方面包括基于扩展范围近场共振耦合感应的无线电力传输设计，其中磁场近场范围可以扩展几个数量级。 在一个方面，可以帮助实现近场延伸的一个元件是向变送器添加变换磁性透镜。 磁性透镜可以由折射率例如为-1的超材料制成。 它可以恢复和准直近场ev逝磁通，有效地将近场耦合距离延伸几个数量级。
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公开(公告)号：WO2009024762A3
公开(公告)日：2009-07-16
申请号：PCT/GB2008002772
申请日：2008-08-15
Applicant: WOLFSON MICROELECTRONICS PLC , TRAYNOR ANTHONY BERNARD , LAMING RICHARD IAN , HOEKSTRA TSJERK HANS
Inventor： TRAYNOR ANTHONY BERNARD , LAMING RICHARD IAN , HOEKSTRA TSJERK HANS
IPC: B81B3/00
CPC classification number: H04R19/04 , B81B3/0021 , B81B3/0072 , B81B3/0094 , B81B2201/00 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , H01L27/00 , H04R19/00 , H04R19/005 , H04R23/00 , H04R31/00 , H04R2499/11
Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane (5) on a substrate (3), and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion (7a) and a second back-volume portion (7b), the first back-volume portion (7a) being separated from the second back-volume portion (7b) by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion (7b) can be made greater than the cross-sectional area of the membrane (5), thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane (5). The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.
Abstract translation: 一种制造微机电系统（MEMS）换能器的方法包括以下步骤：在衬底（3）上形成膜（5）;以及在衬底中形成回流体积。 在衬底中形成后体积的步骤包括形成第一后体积部分（7a）和第二后体积部分（7b）的步骤，第一后体积部分（7a）与第二后体积部分 后体积部分（7b）通过后体积的侧壁中的台阶。 第二后体积部分（7b）的横截面积可以大于膜（5）的横截面积，由此使得后体积能够增加而不受横截面积的限制 的膜（5）。 后部空间可以包括第三后部空间部分。 第三后部容积部分能够更精确地形成膜的有效直径。
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Patent Agency Ranking
公开(公告)号：WO2013181540A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/043627
申请日：2013-05-31
Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Inventor： AIZENBERG, Joanna , WONG, Tak, Sing , KANG, Sung, Hoon , HE, Ximin
CPC classification number: B42D25/351 , B32B27/08 , B42D25/00 , B42D25/23 , B42D25/24 , B42D25/29 , B42D25/324 , B42D25/342 , B42D2033/30 , B42D2035/20 , B42D2035/24 , B42D2035/34 , B81B3/0083 , B81B2201/00 , G02B5/1828 , G07D7/003
Abstract: A document and an Anti-counterfeiting method for use in such documents are described. Said document and Anti-counterfeiting method include introducing a plurality of raised nanoscopic to microscopic structures, here referred to as reconfigurable structures, formed over a polymer substrate to induce optical changes, such as structural color and/or optical fuzziness. Dynamic changes using liquids provide the anti-counterfeiting measures.
Abstract translation: 描述了用于这些文件的文件和防伪方法。 所述文件和防伪方法包括将多个凸起的纳米尺寸引入到在聚合物基底上形成的微结构（这里称为可重构结构）以引起光学变化，例如结构颜色和/或光学模糊性。 使用液体的动态变化提供防伪措施。
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公开(公告)号：WO2009024762A2
公开(公告)日：2009-02-26
申请号：PCT/GB2008/002772
申请日：2008-08-15
Applicant: WOLFSON MICROELECTRONICS PLC , TRAYNOR, Anthony, Bernard , LAMING, Richard, Ian , HOEKSTRA, Tsjerk, Hans
IPC: B81B3/00
CPC classification number: H04R19/04 , B81B3/0021 , B81B3/0072 , B81B3/0094 , B81B2201/00 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , H01L27/00 , H04R19/00 , H04R19/005 , H04R23/00 , H04R31/00 , H04R2499/11
Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane (5) on a substrate (3), and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion (7a) and a second back-volume portion (7b), the first back-volume portion (7a) being separated from the second back-volume portion (7b) by a step in a sidewall of the back-volume. The cross-sectional area of the second back-volume portion (7b) can be made greater than the cross-sectional area of the membrane (5), thereby enabling the back-volume to be increased without being constrained by the cross-sectional area of the membrane (5). The back-volume may comprise a third back-volume portion. The third back-volume portion enables the effective diameter of the membrane to be formed more accurately.
Abstract translation: 制造微机电系统（MEMS）换能器的方法包括以下步骤：在衬底（3）上形成膜（5），并在衬底中形成后体积。 在衬底中形成背部体积的步骤包括形成第一后部容积部分（7a）和第二后部体积部分（7b）的步骤，第一后部体积部分（7a）与第二后部体积部分 后体积部分（7b）通过后体积的侧壁中的台阶。 第二后部容积部分（7b）的横截面面积可以大于膜（5）的横截面面积，从而能够增加后部体积而不受横截面积的约束 的膜（5）。 背部容积可以包括第三后部体积部分。 第三后部体积部分能够更准确地形成膜的有效直径。
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公开(公告)号：KR101901809B1
公开(公告)日：2018-11-05
申请号：KR1020157029236
申请日：2014-03-13
Applicant: 인벤센스, 인크.
IPC: G01R33/028 , G01P15/08
CPC classification number: G01R33/02 , B81B2201/00 , G01P15/08 , G01R33/0286 , H01L21/00 , H01L2221/00
Abstract: MEMS 디바이스는제 1 프루프매스, 제 1 프루프매스의표면상에부분적으로증착된제 1 자화된자기물질, 제 1 프루프매스를지지하기위해기판에고정된제 1 스프링, 및제 1 프루프매스에결합되고주변가속도에의해야기된제 1 프루프매스의움직임을감지하도록동작가능한제 1 감지요소를포함한다. MEMS 디바이스는제 1 프루프매스에결합되고주변자기장에의해야기된제 1 프루프매스의움직임을감지하도록동작가능한제 2 감지요소를더 포함한다.
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公开(公告)号：KR1020150132411A
公开(公告)日：2015-11-25
申请号：KR1020157029236
申请日：2014-03-13
Applicant: 인벤센스, 인크.
IPC: G01R33/028 , G01R33/02 , G01P15/08
CPC classification number: G01R33/02 , B81B2201/00 , G01P15/08 , G01R33/0286 , H01L21/00 , H01L2221/00
Abstract: MEMS 디바이스는제 1 프루프매스, 제 1 프루프매스의표면상에부분적으로증착된제 1 자화된자기물질, 제 1 프루프매스를지지하기위해기판에고정된제 1 스프링, 및제 1 프루프매스에결합되고주변가속도에의해야기된제 1 프루프매스의움직임을감지하도록동작가능한제 1 감지요소를포함한다. MEMS 디바이스는제 1 프루프매스에결합되고주변자기장에의해야기된제 1 프루프매스의움직임을감지하도록동작가능한제 2 감지요소를더 포함한다.
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公开(公告)号：TW200918446A
公开(公告)日：2009-05-01
申请号：TW097131381
申请日：2008-08-18
Applicant: 歐勝微電子 WOLFSON MICROELECTRONICS PLC
Inventor： 崔諾 安東尼 波納 TRAYNOR, ANTHONY BERNARD , 拉敏 理查 伊安 LAMING, RICHARD IAN , 霍克史特拉 提茲德克 漢斯 HOEKSTRA, TSJERK HANS
CPC classification number: H04R19/04 , B81B3/0021 , B81B3/0072 , B81B3/0094 , B81B2201/00 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , H01L27/00 , H04R19/00 , H04R19/005 , H04R23/00 , H04R31/00 , H04R2499/11
Abstract: 一種形成MEMS換能器的方法,包括形成一薄膜於一基板上,以及形成一背腔於基板上。形成背腔於基板上的步驟包括形成一第一背腔部與一第二背腔部,並且該第一背腔部係藉由一形成於該背腔側壁上的階梯狀結構而與該第二背腔部分隔。第二背腔部的截面係安排大於薄膜的截面,因而能在不受到薄膜截面的限制下,增加背腔的空間。背腔可更包括一第三背腔部。第三背腔部可幫助薄膜上的可運作區域得以精確地設置。
Abstract in simplified Chinese: 一种形成MEMS换能器的方法,包括形成一薄膜于一基板上,以及形成一背腔于基板上。形成背腔于基板上的步骤包括形成一第一背腔部与一第二背腔部,并且该第一背腔部系借由一形成于该背腔侧壁上的阶梯状结构而与该第二背腔部分隔。第二背腔部的截面系安排大于薄膜的截面,因而能在不受到薄膜截面的限制下,增加背腔的空间。背腔可更包括一第三背腔部。第三背腔部可帮助薄膜上的可运作区域得以精确地设置。
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