Abstract:
A measuring apparatus comprises a detector device for detecting a variable to be measured, and a controller operative to control the detector device and generate an output signal indicative of the magnitude of the variable being measured. The detector device comprises a housing on which are mounted two Peltier-Seebeck detectors, the detectors being arranged on the housing such that only the first Peltier-Seebeck detector is exposed, in use, to the variable to be measured. The controller is operative to generate the output signal based on the output of the first Peltier-Seebeck detector and the output of the second Peltier-Seebeck detector so as to account for the effect of the ambient heat on each Peltier-Seebeck detector.
Abstract:
A temperature control apparatus comprises a light-emitting device, a light-emitting device controller, a Peltier device for controlling the temperature of the light-emitting device to a target temperature, a temperature detector for the light-emitting device, a first reference voltage holding unit for holding a voltage corresponding to the target temperature, a reference voltage controller for outputting a holding signal and a switching signal, a second reference voltage holding unit for holding the output voltage of the temperature detector on the basis of the holding signal, a reference voltage switching unit for selecting either the output of the first reference voltage holding unit or the output of the second reference voltage holding unit as a reference voltage, and a Peltier controller for controlling the Peltier device so as to minimize a difference between the output voltage of the temperature detector and the output voltage of the reference voltage switching unit.
Abstract:
The radiation clinical thermometer of the present invention is provided with a light guide tube 15 to guide the infrared radiation from the temperature-measured object, a first infrared sensor 10 for detecting the infrared radiation from the light guide tube 15, a temperature sensitive sensor 12 which generates a reference temperature signal, a reference cavity 17 which has approximately the same temperature condition as the light guide tube 15 and is sealed so as to shut out infrared radiation from outside, a second infrared sensor 11 for detecting the infrared radiation from the reference cavity 17, a temperature computing means 13 for calculating temperature in accordance with the signals from the first infrared sensor 10 and the second infrared sensor 11, a temperature sensitive sensor 12, and a display unit 14 for displaying temperature in accordance with the signal from the temperature computing means 13; and at least either the light guide tube 15 or the reference cavity 17 is tapered off toward the emission inlet of the light guide tube 15 from the first or second infrared sensor 10 or 11 side.
Abstract:
Method and apparatus for measuring the radiation originating from one side of a wafer of semiconductor material using a pyrometer, wherein non-blackbody compensation radiation is projected onto that side to compensate for the reflectivity of the wafer of material and wherein the intensity of the non-blackbody compensation radiation is controlled subject to the amount of radiation measured by the pyrometer.
Abstract:
An interferometric sensor (10) employs a sensing optical fiber (12) and a reference optical fiber (14). The sensing fiber (12) has a coating 16 thereon responsive to radiated thermal energy while the reference fiber is shielded therefrom. Both the sensing and reference fibers are subjected to the same ambient environment so that both fibers are subjected to heating by convection or conduction in essentially the same amounts. As a result, the sensor (10) is substantially nonresponsive to convected or conducted thermal energy while being highly responsive to radiated energy, particularly in the 6-30 micron wavelength region.
Abstract:
A method for contactlessly establishing a temperature of a surface includes determining the temperature measurement values of the plurality of blind pixels and determining temperature measurement values of the plurality of measurement pixels. The method further includes determining a temperature measurement value and a temperature measurement values by subtracting the temperature measurement value of the first blind pixel of the plurality of blind pixels from a temperature measurement value of a second blind pixel of the plurality of blind. The method further includes correcting the temperature measurement values by pixel-associated temperature drift components in each case, wherein the temperature drift components are determined using the temperature measurement value and/or the temperature measurement value.
Abstract:
A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.
Abstract:
An infrared sensor assembly for sensing infrared radiation from an object is disclosed. The infrared sensor assembly comprises a sensor array comprising a plurality of sensing elements, provided on or embedded in a substrate extending in a substrate plane. The sensor array comprises at least two infrared sensing elements, each infrared sensing element having a radiation responsive element providing a proportionate electrical signal in response to infrared radiation incident thereto and at least two blind sensing elements, at least one blind sensing element being interspersed among the at least two sensing elements, each blind sensing element being shielded from incident infrared radiation from the object and providing a proportionate electrical signal in response to parasitic thermal fluxes. The output of the sensor array is a function of the infrared sensing elements and of the blind sensing elements such that parasitic thermal fluxes are at least partly compensated for.
Abstract:
A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.
Abstract:
Provided is an infrared image sensor for detecting infrared rays. The infrared image sensor includes a light-receiving unit including a pixel region in which a plurality of pixels are arranged and at least one reference pixel; a difference circuit for acquiring a first differential signal that is a differential signal between a signal of one pixel contained in the pixel region and a signal of the reference pixel and a second differential signal that is a differential signal between signals of two predetermined pixels out of the pixels contained in the pixel region; and a pixel signal calculating unit that calculates a signal of each of the pixels on the basis of the first differential signal and the second differential signal.