公开(公告)号：US5747862A

公开(公告)日：1998-05-05

申请号：US124624

申请日：1993-09-22

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L31/0304

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：WO1996009626A1

公开(公告)日：1996-03-28

申请号：PCT/US1995011991

申请日：1995-09-21

Applicant: TERASTORE, INC.

Inventor： TERASTORE, INC. ,  HURT, Thomas, D. ,  HALPINE, Scott, A.

IPC: G11B11/10

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, the electron having a wavelength "characteristic" of unpaired electrons in the data storage layer which cause the magnetic moment of the material, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at a second wavelength at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Abstract translation: 一种数据存储装置，包括基板，基板上的数据存储层和自旋极化电子源。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子，数据存储在数据存储层中，该电子磁场具有与第一和第二数据值中的一个数据值相对应的极化方向，电子具有波长“特征”的不成对电子 数据存储层，其引起材料的磁矩，并将自旋极化电子引导到数据磁场，以将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导第二波长的自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：WO1995020814A1

公开(公告)日：1995-08-03

申请号：PCT/US1995001013

申请日：1995-01-26

Applicant: TERASTORE, INC.

Inventor： TERASTORE, INC. ,  HURT, Thomas, D. ,  HALPINE, Scott, A.

IPC: G11B11/10

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

Abstract translation: 一种数据存储介质，包括形成在基板上的基板和数据存储层。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到 将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

公开(公告)号：KR100312102B1

公开(公告)日：2001-11-03

申请号：KR1019997000802

申请日：1995-09-21

Applicant: 테라스토어 인코포레이티드

Inventor： 토마스디.허트 ,  스코트에이.핼파인

IPC: G11B11/10

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: 본발명의데이터기억장치는기판과, 기판상의데이터기억층및, 스핀분극화전자원을포함한다. 데이터기억층은데이터기억층의표면과직교하는자기이방성을데이터기억층에제공하는자성재의고정된수의원자층을구비하여구성된다. 데이터자기장은데이터기억층에서생성된다. 데이터자기장은제1데이터값에대응하는제1방향또는제2데이터값에대응하는제2방향으로분극된다. 데이터는제1 및제2데이터값중 하나의값에대응하는분극방향과같이전자자기장을갖는스핀분극화전자를제공함으로써데이터기억층에기억되고, 전자는재료의자기모멘트를발생시키는데이터기억층에서쌍을이루지않는전자의파장특성을가지며, 데이터자기장으로스핀분극화전자를진행시켜전자자기장의분극방향을데이터자기장으로전달한다. 데이터자기장에의해스핀분극화전자의편향또는흡인을검출하고데이터자기장에서제2파장으로스핀분극화전자를진행시킴으로써데이터기억층으로부터데이터가독출된다. 한편, 자기매체가 2차전자를생성하도록데이터자기장으로스핀분극화전자를진행시키고, 2차전자의소정특성을검출함으로써데이터기억층으로부터독출된다.

公开(公告)号：JP5527680B2

公开(公告)日：2014-06-18

申请号：JP2009073929

申请日：2009-03-25

Applicant: 国立大学法人名古屋大学 ,  学校法人大同学園 ,  大同特殊鋼株式会社

Inventor： 徹 宇治原 ,  秀光 金 ,  美和 竹田 ,  彊 中西 ,  尚人 山本 ,  貴 坂 ,  俊宏 加藤

IPC: H01J1/34 ,  G21K1/00 ,  H01J37/073

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

公开(公告)号：JP2009266809A

公开(公告)日：2009-11-12

申请号：JP2009073929

申请日：2009-03-25

Applicant: Daido Gakuen ,  Daido Steel Co Ltd ,  Univ Nagoya ,  国立大学法人名古屋大学 ,  大同特殊鋼株式会社 ,  学校法人大同学園

Inventor： UJIHARA TORU ,  KIN HIDEMITSU ,  TAKEDA YOSHIKAZU ,  NAKANISHI TSUTOMU ,  YAMAMOTO NAOHITO ,  SAKA TAKASHI ,  KATO TOSHIHIRO

IPC: H01J37/073 ,  G21K1/00 ,  H01J1/34 ,  H01J37/28

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

Abstract: PROBLEM TO BE SOLVED: To achieve a spin polarized electron generating element having high spin polarization degree and external quantum efficiency while providing flexibility in selecting materials of a substrate, a buffer layer, and a distorted superlattice layer. SOLUTION: In the spin polarized electron generating element consisting of a substrate, a buffer layer, and a distorted superlattice layer formed on the buffer layer, an intermediate layer is interposed between the substrate and the buffer layer, the intermediate layer being made of crystal having a lattice constant larger than that of crystal constituting the buffer layer. With this, cracks in a direction perpendicular to the substrate are generated in the buffer layer due to tensile distortion, so that the buffer layer becomes mosaic-like. As a result, since a glide dislocation in an oblique direction is not introduced into the distorted superlattice layer grown on the buffer layer, the crystalline property of the distorted superlattice layer is improved. Consequently, the spin polarization degree of excited electrons and the external quantum efficiency of polarized electrons are improved. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了获得具有高自旋极化度和外部量子效率的自旋极化电子发生元件，同时在选择衬底，缓冲层和畸变超晶格层的材料方面提供灵活性。 解决方案：在由衬底，缓冲层和形成在缓冲层上的变形超晶格层组成的自旋极化电子发生元件中，在衬底和缓冲层之间插入中间层，中间层被制成 的晶格常数大于构成缓冲层的晶体的晶格常数。 由此，由于拉伸变形，在缓冲层中产生与基板垂直的方向上的裂纹，使得缓冲层变成马赛克状。 结果，由于在倾斜方向上的滑移位错不被引入到在缓冲层上生长的失真的超晶格层中，所以改善了超晶格层的结晶特性。 因此，激发电子的自旋极化度和极化电子的外部量子效率得到改善。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：ZA9500654B

公开(公告)日：1995-12-07

申请号：ZA9500654

申请日：1995-01-27

Applicant: TERA STORE INC

Inventor： HURT THOMAS D ,  HALPINE SCOTT A

IPC: G11B5/00 ,  G11B5/64 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11C

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J2203/0296 ,  H01J2237/06383

公开(公告)号：EP2605266A2

公开(公告)日：2013-06-19

申请号：EP12197283.0

申请日：2012-12-14

Applicant: Consiglio Nazionale delle Ricerche

Inventor： Grillo, Vincenzo ,  Marrucci, Lorenzo ,  Karimi, Ebrahim ,  Santamato, Enrico

IPC: H01J37/06 ,  H01J3/02

CPC classification number: H01J37/26 ,  G21K1/16 ,  H01J3/02 ,  H01J37/06 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: Apparatus for spin polarizing a particle beam, which is adapted to process an input particle beam (Bi) in such a way as to generate an at least partially spin polarized output particle beam (Bo), and comprises:
- a vortex beam generator (1) for imparting orbital angular momentum to the input particle beam;
- an electromagnetic field generator (5) for generating a transverse magnetic field, space-variant and symmetric with respect to the (z) axis of the input particle beam, in such a way as to change the spin of the particles and attach thereto a plurality of different values of orbital angular momentum in dependence on their input spin values; and
- a beam component separating group (7, 9) for spatially separating the particles in dependence on their orbital angular momentum values, in such a way as to obtain the at least partially spin polarized output particle beam.

Abstract translation: 用于自旋极化粒子束的装置，其适于以这样的方式处理输入粒子束（Bi），以产生至少部分自旋极化输出粒子束（Bo），并且包括： - 涡流发生器（1） ），用于将轨道角动量传递给输入粒子束; - 用于产生相对于输入粒子束的（z）轴的空间变化和对称的横向磁场的电磁场发生器（5），以改变粒子的旋转并附着于其上 多个不同的轨道角动量值取决于它们的输入自旋值; 和 - 用于根据其轨道角动量值空间分离颗粒的束分量分离组（7,9），以获得至少部分旋转极化的输出粒子束。

公开(公告)号：EP2270832A1

公开(公告)日：2011-01-05

申请号：EP09724694.6

申请日：2009-03-24

Applicant: National University Corporation Nagoya University

Inventor： UJIHARA, Toru ,  JIN, Xiuguang ,  TAKEDA, Yoshikazu ,  NAKANISHI, Tsutomu ,  YAMAMOTO, Naoto ,  SAKA, Takashi ,  KATOU, Toshihiro

IPC: H01J37/073 ,  G21K1/00 ,  H01J1/34

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

Abstract: To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.
In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

Abstract translation: 提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

公开(公告)号：EP0867907A3

公开(公告)日：1998-12-23

申请号：EP98109206.7

申请日：1995-09-21

Applicant: TERASTORE, INC.

Inventor： Hurt, Thomas D. ,  Halpine, Scott A.

IPC: H01J1/30 ,  H01J37/06 ,  G11B11/10

CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emission device for generating and emitting spin-polarized electrons comprising: a first conducting material; a magnetic ultrathin film magnetically coupled to the first conducting material; an electrically insulative and magnetically permeable medium being located between the first conducting material and the magnetic ultrathin film; a second conducting material formed into a structure that emits electrons when impinged by an electric field and electrically coupled to the magnetic ultrathin film; and an anode, electrically coupled to the structure that emits electrons, for generating the electric field that impinges on the structure that emits electrons.