公开(公告)号：EP2019415A1

公开(公告)日：2009-01-28

申请号：EP08450110.5

申请日：2008-07-21

Applicant: IMS Nanofabrication AG

Inventor： Platzgummer, Elmar, Dr.

IPC: H01J37/317 ,  H01J37/12 ,  H01J37/30

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/3045

Abstract: A multi-beam source (101) for generating a plurality of beamlets (112) of energetic electrically charged particles, the multi-beam source comprising an illumination system (102) generating an illuminating beam of charged particles and a beam-forming system (103) being arranged after the illumination system as seen in the direction of the beam and adapted to form a plurality of telecentric or homocentric beamlets (112) out of the illuminating beam, said beam forming system (103) comprising a beam-splitting means and an electrical zone device (109), said electrical zone comprising a composite electrode (110) being composed of a number of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.

Abstract translation: 一种用于产生能量带电粒子的多个子束（112）的多光束源（101），所述多光束源包括产生带电粒子照明束的照明系统（102）和束形成系统（103 ）设置在所述照明系统之后，沿着所述光束的方向观察并且适于在所述照明光束中形成多个远心或同心的小射束（112），所述光束形成系统（103）包括光束分离装置和 电区设备（109），所述电区包括复合电极（110），所述复合电极由多个基本上平面的部分电极构成，适于施加不同的静电电势并因此影响所述子束。

公开(公告)号：EP1046185A1

公开(公告)日：2000-10-25

申请号：EP99947294.7

申请日：1999-09-07

Applicant: Koninklijke Philips Electronics N.V.

Inventor： KRIJN, Marcellinus, P., C., M.

IPC: H01J37/317 ,  H01J37/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: According to a known projection lithography method an object (14) is imaged on an imaging surface (16) by means of a telescopic system of rotationally symmetrical electron lenses (10, 12). The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is subject to a limit which is imposed by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas (18) with a high current concentration are avoided. To this end, the imaging system includes two quadrupoles, each of which coincides with one of the two round lenses (10, 12), so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system remains telescopic to a high degree and the imaging remains stigmatic.

公开(公告)号：EP0344646A2

公开(公告)日：1989-12-06

申请号：EP89109553.1

申请日：1989-05-26

Applicant: IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. ,  Österreichische Investitionskredit Aktiengesellschaft

Inventor： Stengl, Gerhard, Dr. ,  Glavish, Hilton F., Dr.

IPC: H01J37/317 ,  H01J37/30 ,  H01J37/304

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04928 ,  H01J2237/1207 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

Abstract translation: 描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。 所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。 通过协调选择光学柱的参数，同时使透镜失真和色彩模糊最小化。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有 被处理扭曲了。 计量系统可以方便地对设备进行校准和调整。

公开(公告)号：JP5415720B2

公开(公告)日：2014-02-12

申请号：JP2008188557

申请日：2008-07-22

Applicant: イーエムエス ナノファブリカツィオン アーゲー

Inventor： プラッツグマー エルマー

IPC: H01J37/305 ,  G03F7/20 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/3045

公开(公告)号：JP3678749B2

公开(公告)日：2005-08-03

申请号：JP51872795

申请日：1995-01-12

Applicant: アイエムエス イオネン マイクロファブルカティオンズ システメ ゲーエムベーハー

Inventor： ゲルハルト シュテンクル ,  アルフレット チャルプカ ,  ヘルベルト フォナハ

IPC: H01J37/12 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027

CPC classification number: H01J37/3007 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/04928 ,  H01J2237/31755

公开(公告)号：JP2009032691A

公开(公告)日：2009-02-12

申请号：JP2008188557

申请日：2008-07-22

Applicant: Ims Nanofabrication Ag ,  イーエムエス ナノファブリカツィオン アーゲー

Inventor： PLATZGUMMER ELMAR

IPC: H01J37/305 ,  G03F7/20 ,  H01L21/027

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/3045

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam source generating a set of particle beamlets having low emittance and a uniform current distribution. SOLUTION: This multi-beam source 101 for generating a plurality of beamlets 112 of energetic electrically charged particles comprises: an illumination system 102 generating an illuminating beam of charged particles; and a beam-forming system 103 being arranged behind the illumination system as seen in the direction of the beam, and adapted to form a plurality of telecentric or homocentric beamlets 112 out of the illuminating beam. The beam forming system 103 comprises a beam-splitting means and an electrical zone device 109. The electrical zone device comprises a composite electrode 110 being composed of a plurality of substantially planar partial electrodes adapted to have different electrostatic potentials applied thereto and thus influence the beamlets. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种产生具有低发射度和均匀电流分布的一组粒子束的多光束源。 解决方案：用于产生能量带电粒子的多个子束112的该多光束源101包括：产生带电粒子的照射束的照明系统102; 以及在沿着光束的方向观察的照明系统后面设置的束形成系统103，并且适于在照明光束中形成多个远心或同心的子束112。 波束形成系统103包括分束装置和电区装置109.电区装置包括复合电极110，其由多个基本上平面的部分电极组成，其适用于施加到其上的不同的静电电位并因此影响小束 。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006032123A

公开(公告)日：2006-02-02

申请号：JP2004209429

申请日：2004-07-16

Applicant: Ebara Corp ,  Nikon Corp ,  株式会社ニコン ,  株式会社荏原製作所

Inventor： NIN TAKEAKI

IPC: H01J37/29 ,  H01J37/09 ,  H01J37/141 ,  H01L21/66

CPC classification number: H01J37/04 ,  H01J37/26 ,  H01J2237/04928 ,  H01J2237/262

Abstract: PROBLEM TO BE SOLVED: To provide a mapping type electron microscope composed by relaxing restriction of a condition of a projection electron optical system to design of an illumination electron optical system to increase the degree of freedom of design of the illumination electron optical system. SOLUTION: Generated electrons 6b (main light ray) emitted in parallel with an optical axis from a sample 5 are focused by a cathode lens and intersect with the optical axis 3 at one point. The point becomes a first crossover. The generated electrons 6b are set parallel with the optical axis by the cathode lens 74a and focused at the position of an electromagnetic prism 2, enters a zoom lens 8a through a stigmetor 7, and focused again to intersect with the optical axis 3 at one point. The position becomes a second crossover. An aperture stop 11 is formed at the second crossover position. Thereby, the need to form an aperture stop at the first crossover position is obviated, whereby the design of the illumination electro-optical system is facilitated. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种映射型电子显微镜，其通过放宽对投影电子光学系统的条件的限制来设计照明电子光学系统，以增加照明电子光学系统的设计自由度 。 解决方案：从样品5与光轴平行发射的产生的电子6b（主光线）被阴极透镜聚焦，并在一点与光轴3相交。 该点成为第一个交叉。 所生成的电子6b通过阴极透镜74a与光轴平行设置并聚焦在电磁棱镜2的位置，通过标称器7进入变焦透镜8a，并再次聚焦，以一点与光轴3相交 。 该位置成为第二个交叉。 在第二交叉位置处形成孔径光阑11。 因此，避免了在第一交叉位置处形成孔径光阑的需要，从而便于照明电光系统的设计。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：KR100582813B1

公开(公告)日：2006-05-24

申请号：KR1020007004958

申请日：1999-09-07

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 크리즌마셀리누스피씨엠

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: 알려져 있는 투사 리소그래피 방법에 따라서, 물체(14)는 회전 대칭 전자 렌즈(10, 12)의 텔레스코픽형 시스템에 의해 결상면(16)에 결상된다. 투사 리소그래피에 의해 집적 회로를 제조하는 동안 작업 처리량은 결상 전자빔에서의 전류 량에 의해 결정되는데, 상기 전류는 전자의 해상도 제한 작용(쿨롱 작용)에 의해 제한된다. 본 발명은 높은 전류 밀도를 갖는 영역(18)이 회피되는 보다 큰 빔 전류를 허용한다. 이러한 목적으로, 결상 시스템은 상호 수직 4극자(32, 34, 46, 38, 40)을 포함하여, 전자가 (작은) 원형 교차(18) 대신 라인 모양의 초점 스포트에 수렴된다. 시스템은 텔레스코픽형이고, 결상은 xz 면과 yz 면에서 동일한 확대율로 오점이 있다.

公开(公告)号：KR1020010024587A

公开(公告)日：2001-03-26

申请号：KR1020007004958

申请日：1999-09-07

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 크리즌마셀리누스피씨엠

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: 알려져있는투사형리소그래피방법에따라서, 물체(14)는회전대칭전자렌즈(10, 12)의망원경시스템에의해이미징표면(16)에이미징된다. 투사형리소그래피에의해집적회로를제조하는동안작업처리량은이미징전자빔에서의전류량에의해결정되는데, 상기전류는전자의해상도제한작용(쿨롱작용)에의해제한된다. 본발명은높은전류밀도를갖는영역(18)이회피되는보다큰 빔전류를허용한다. 이러한목적으로, 이미징시스템은상호수직 4중극(32, 34, 46, 38, 40)을포함하여, 전자가 (작은) 원형교차(18) 대신라인모양의초점스포트에수렴된다. 시스템은망원경이고, 이미징은 x-z 면과 y-z 면에서동일한확대율로오점이있다.

公开(公告)号：KR1020010031926A

公开(公告)日：2001-04-16

申请号：KR1020007005031

申请日：1999-09-07

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 크리진마르셀리누스페.체.엠.

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: 공지된투사형리소그래피방법에따라원형대칭적인전자렌즈들(10,12)의텔리스코픽시스템에의해대상(14)가이미지표면(16) 상에이미지화된다. 투사형리소그래피에의한집적회로들의제조동안의처리량은이미지화전자빔의전류량에의해결정되며, 이러한전류는전자들의해상-제한상호작용(쿨롱상호작용)에의해부과된제한을받게된다. 본발명은높은전류집중을갖는영역들18)이방지된다는점에서보다큰 빔전류를가능하게한다. 이러한목적을위하여, 이미지시스템은두 개의사극자들을포함하며, 이들각각은두 원형렌즈들(10,12)중한 렌즈와일치하여, 전자들이 (작은) 원형크로스-오버(18) 대신에선-형상의초점으로집중된다. 시스템은고도의텔리스코픽을유지하며, 이미지는반점을유지한다.