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    Ion beam lithography
    1.
    发明授权
    Ion beam lithography 失效
    离子束光刻

    公开(公告)号：US4985634A

    公开(公告)日：1991-01-15

    申请号：US226275

    申请日：1988-07-29

    Applicant: Gerhard Stengl ,  Hilton F. Glavish

    Inventor： Gerhard Stengl ,  Hilton F. Glavish

    IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04928 ,  H01J2237/1207 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

    Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

    Abstract translation: 描述了用于投影离子束光刻的装置和方法，其允许使用实际尺寸的光学柱在晶片平面处形成掩模图案的低失真，大场，缩小图像。 所示的列包括加速的Einzel透镜，随后是间隙透镜，具有许多合作特征。 通过协调选择光学柱的参数，同时最小化透镜失真和色彩模糊。 在新场景的曝光之前和期间都采用相对于晶片上的现有图案的图像场的位置的实时测量，并且提供了将新场与现有图案相匹配的装置，即使后者具有 被处理扭曲了。 计量系统使仪器方便校准和调整。

    PARTICLE BEAM, IN PARTICULAR IONIC OPTIC REPRODUCTION SYSTEM
    4.
    发明申请
    PARTICLE BEAM, IN PARTICULAR IONIC OPTIC REPRODUCTION SYSTEM 审中-公开
    粒子，特别是离子型光学系统图像

    公开(公告)号：WO1995019637A1

    公开(公告)日：1995-07-20

    申请号：PCT/AT1995000003

    申请日：1995-01-12

    Applicant: IMS IONEN MIKROFABRIKATIONS SYSTEME GESELLSCHAFT MBH ,  STENGL, Gerhard ,  CHALUPKA, Alfred ,  VONACH, Herbert

    Inventor： IMS IONEN MIKROFABRIKATIONS SYSTEME GESELLSCHAFT MBH

    IPC: H01J37/30

    CPC classification number: H01J37/3007 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/04928 ,  H01J2237/31755

    Abstract: A particle beam, in particular an ionic optic reproduction system, preferably for lithographic purposes, has a particle source, in particular an ion source for reproducing on a wafer a structure designed in a masking foil as one or several transparent spots, in particular openings, through at least two electrostatic lenses arranged upstream of the wafer. One of the lenses is a so-called grating lens constituted by one or two tubular electrodes (R1, R2) and by a perforated plate arranged in the path of the beam perpendicularly to the optical axis D. The plate is formed by a masking foil M which forms the central or first electrode of the grating lens, in the direction of propagation of the beam.

    Abstract translation: 本发明涉及一种颗粒，尤指离子光学成像系统中，优选用于光刻的目的，包括粒子，尤指离子源用于在一个或位于上形成掩蔽箔更透明体的形式的至少两个在射束方向在晶片的正面成像的结构，特别是开口 在晶片上设置的静电透镜，透镜的其中一个是，R 2和，设置在与一个或两个管电极R1的开口部形成的光束路径板，所述板被布置成垂直于光轴D.所谓的光栅透镜 所述板由掩模膜M，其形成中间或者在光栅透镜的光束方向上的第一电极的形成。

    Method of forming a quadrupole device for projection lithography by means of charged particles
    5.
    发明授权
    Method of forming a quadrupole device for projection lithography by means of charged particles 失效
    通过带电粒子形成用于投影光刻的四极装置的方法

    公开(公告)号：US06365903B2

    公开(公告)日：2002-04-02

    申请号：US09824620

    申请日：2001-04-02

    Applicant: Marcellinus P. C. M. Krijn

    Inventor： Marcellinus P. C. M. Krijn

    IPC: H01J37153

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Method of forming a quadrupole device for projection lithography by means of charged particles
    6.
    发明申请
    Method of forming a quadrupole device for projection lithography by means of charged particles 失效
    通过带电粒子形成用于投影光刻的四极装置的方法

    公开(公告)号：US20010023926A1

    公开(公告)日：2001-09-27

    申请号：US09824620

    申请日：2001-04-02

    Applicant: PHILIPS CORPORATION

    Inventor： Marcellinus P.C.M. Krijn

    IPC: G21K001/08

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Quadrupole device for projection lithography by means of charged particles
    7.
    发明授权
    Quadrupole device for projection lithography by means of charged particles 失效
    用于通过带电粒子进行投影光刻的四极杆装置

    公开(公告)号：US06236052B1

    公开(公告)日：2001-05-22

    申请号：US09392686

    申请日：1999-09-09

    Applicant: Marcellinus P. C. M. Krijn

    Inventor： Marcellinus P. C. M. Krijn

    IPC: H01J37153

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

    Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

    Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

    Multi-beam source
    10.
    发明授权
    Multi-beam source 有权
    多光束源

    公开(公告)号：US08183543B2

    公开(公告)日：2012-05-22

    申请号：US12178153

    申请日：2008-07-23

    Applicant: Elmar Platzgummer

    Inventor： Elmar Platzgummer

    IPC: A61N5/00 ,  G21G5/00

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/12 ,  H01J37/3007 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/04928 ,  H01J2237/1205 ,  H01J2237/1501 ,  H01J2237/151 ,  H01J2237/3045

    Abstract: A multi-beam source for generating a plurality of beamlets of energetic electrically charged particles. The multi-beam source includes an illumination system generating an illuminating beam of charged particles and a beam-forming system being arranged after the illumination system as seen in the direction of the beam, adapted to form a plurality of telecentric or homocentric beamlets out of the illuminating beam. The beam forming system includes a beam-splitter and an electrical zone device, the electrical zone having a composite electrode composed of a plurality of substantially planar partial electrodes, adapted to be applied different electrostatic potentials and thus influencing the beamlets.

    Abstract translation: 一种用于产生能量带电粒子的多个子束的多光束源。 多光束源包括产生带电粒子的照明光束的照明系统，以及沿着光束的方向被布置在照明系统之后的束形成系统，适于在多个远心或同心圆的子束之外形成 照明光束。 束形成系统包括分光器和电区装置，电区具有由多个基本上平面的部分电极组成的复合电极，其适于施加不同的静电电势并因此影响子束。

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