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公开(公告)号：US20130277213A1
公开(公告)日：2013-10-24
申请号：US13922353
申请日：2013-06-20
Applicant: CANON ANELVA CORPORATION
Inventor： Yohsuke SHIBUYA
IPC: C23C14/35
CPC classification number: H01J37/3476 , B08B7/00 , C23C14/3407 , C23C14/3414 , C23C14/35 , C23C14/564 , H01J37/3405 , H01J37/3455 , H01J37/3461 , H01J37/3482 , H01J37/3485
Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
Abstract translation: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括：能够在目标表面上形成磁场的磁体单元; 能够驱动所述磁体单元以改变所述磁场图案的旋转系统; 以及电流计，被配置为当由磁体单元形成磁场时测量目标电流，并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置，并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁，从而可以仅对必需的部分执行清洁。
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32.发明申请Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus 有权基板保持装置，掩模对准方法和真空处理装置公开(公告)号：US20110051115A1
公开(公告)日：2011-03-03
申请号：US12850706
申请日：2010-08-05
Applicant: Yoshimitu Shimane , Nobuo Yamaguchi
Inventor： Yoshimitu Shimane , Nobuo Yamaguchi
CPC classification number: H01L21/682 , C23C14/042 , H01J37/3405 , H01J37/3447 , H01J37/3485
Abstract: The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights.
Abstract translation: 本发明提供一种掩模对准机构，其减少了颗粒的发生并且高精度地对准掩模，以及包括这种掩模对准机构的真空处理装置。 根据本发明的一个实施方式的掩模对准机构包括：基板保持器，当基板被转印并且其上形成有四个锥形销时可上下移动，并且形成有凹槽的掩模。 锥形销可以分别插入槽中。 锥形销包括一对长锥形销和一对短锥销。 每对中的锥形销设置成跨越衬底彼此面对。 形成在长锥销中的锥形表面和形成在短锥销中的锥形表面位于不同的高度。
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公开(公告)号：WO2013083238A1
公开(公告)日：2013-06-13
申请号：PCT/EP2012/004848
申请日：2012-11-23
Applicant: OERLIKON TRADING AG, TRÜBBACH
Inventor： KRASSNITZER, Siegfried
CPC classification number: C23C14/3485 , C23C14/0094 , H01J37/3467 , H01J37/3485
Abstract: Die Erfindung betrifft ein Verfahren zum reaktiven Sputtern bei dem mittels lonenbeschuss Material aus der Oberfläche eines ersten Targets herausgeschlagen wird und in die Gasphase übergeht, wobei an das Target pulsweise negative Spannung dergestalt angelegt wird dass es an der Targetoberfläche zu einem elektrischen Strom mit einer Stromdichte von grösser als 0.5A/cm 2 kommt so dass das in die Gasphase übergehende Material zumindest teilweise ionisiert ist und bei dem ein Reaktivgasfluss aufgebaut wird und Reaktivgas mit dem Material der Targetoberfäche reagiert, dadurch gekennzeichnet, dass die Dauer eines Spannungspulses so gewählt wird dass während des Spannungspulses die Targetoberfläche an der oder den Stellen an denen der Strom fliesst die meiste Zeit zumindest teilweise mit einer Verbindung aus Reaktivgas und Targetmaterial bedeckt ist und somit die Targetoberfläche in einem ersten Zwischenzustand ist und diese Bedeckung am Ende des Spannungspulses geringer ist als am Anfang des Spannungspulses und somit die Targetoberfläche am Ende des Spannungspulses in einem zweiten Zwischenzustand ist.
Abstract translation: 本发明涉及一种在其中它被敲除的第一靶的表面的反应性溅射装置的方法的离子轰击的材料并进入气相中，在其中目标脉冲式的负电压是这样设计，使得其在目标表面具有的电流密度的电流 大于0.5A / cm 2时，使得在气相中材料的越过至少部分离子化，并在其中反应性气流被建立，并且反应气体与Targetoberfäche的材料发生反应，其特征在于电压脉冲的持续时间被选择为使得所述电压脉冲期间 靶表面到所述一个或多个位置，其中电流流过的大部分时间是至少部分地覆盖有由反应性气体中选择的化合物和靶材料，因此所述目标表面是在第一中间状态，该盖是较少在电压脉冲作为一个的端部 是t时的电压脉冲的开始，从而在目标表面处的电压脉冲在第二中间状态的端部。
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公开(公告)号：WO2011029096A3
公开(公告)日：2011-05-05
申请号：PCT/US2010047994
申请日：2010-09-07
Applicant: GEN PLASMA INC , MADOCKS JOHN
Inventor： MADOCKS JOHN
IPC: C23C16/50 , C23C16/455 , C23C16/458
CPC classification number: C23C16/448 , C23C16/45514 , C23C16/50 , H01J37/3408 , H01J37/3485
Abstract: PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.
Abstract translation: 提供用于将材料沉积到移动基板上的PECVD设备，其包括处理室，处理室的前体气体入口，泵送出口和布置在处理室内的等离子体源。 等离子体源产生一个或多个负辉光区域和一个或多个正柱。 至少一个正极柱朝向基板设置。 等离子体源和前体气体入口相对于彼此和衬底布置，使得前体气体被注入到邻近衬底的正柱中。 提供装置以将前体气体引导到阳极柱中远离负辉光区。
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公开(公告)号：WO2016180452A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060250
申请日：2015-05-08
Applicant: APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank
Inventor： SCHNAPPENBERGER, Frank
CPC classification number: C23C14/3407 , H01J37/32853 , H01J37/3405 , H01J37/3417 , H01J37/3485
Abstract: A method for protecting a target during handling of the target is described. The method includes covering the target with a protection member and sealing the inside of the protection member in an airtight manner, such that a seal is provided between the protection member and the target.
Abstract translation: 描述了在处理目标期间保护目标的方法。 该方法包括用保护构件覆盖目标物并以气密的方式密封保护构件的内部，从而在保护构件和目标之间提供密封。
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Patent Agency Ranking36.发明申请
公开(公告)号：WO2008049634A1
公开(公告)日：2008-05-02
申请号：PCT/EP2007/009326
申请日：2007-10-26
Applicant: HAUZER TECHNO COATING BV , TIETEMA, Roel , PAPA, Frank , SESINK, Geert , THOMASITA, René
Inventor： TIETEMA, Roel , PAPA, Frank , SESINK, Geert , THOMASITA, René
IPC: H01J37/34
CPC classification number: H01J37/3405 , H01J37/3299 , H01J37/3444 , H01J37/3485
Abstract: A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being a means for supplying a flow of reactive gas to each of said first (1) and second (4) cathodes via first (12) and second (14) flow control valves each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feed-back signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode. Also claimed is a magnetron sputtering apparatus in combination with such a power supply.
Abstract translation: 一种双磁控溅射电源，其与具有至少第一和第二溅射阴极的磁控溅射装置一起使用，用于在双磁控溅射模式下操作，存在用于将反应性气体流供应到所述第一（1）和 第二（4）阴极经由第一（12）和第二（14）个流量控制阀，每个与所述第一和第二阴极中的相应一个相关联，并且每个阴极适于控制到分别相关联的阴极的反应气体的流动，所述电源具有 ，对于所述第一和第二阴极中的每一个，用于导出与在该阴极处存在的电压相关的反馈信号的装置，控制电路，用于通过控制相应的流量控制阀来控制反应气体流向相应的阴极， 适于调节相应的流量控制阀以从相应阴极获得对应于为该阴极设定的设定值的电压反馈信号。 还要求保护的是与这种电源组合的磁控溅射装置。
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公开(公告)号：WO2011029096A2
公开(公告)日：2011-03-10
申请号：PCT/US2010/047994
申请日：2010-09-07
Applicant: GENERAL PLASMA, INC. , MADOCKS, John
Inventor： MADOCKS, John
IPC: C23C16/50 , C23C16/455 , C23C16/458
CPC classification number: C23C16/448 , C23C16/45514 , C23C16/50 , H01J37/3408 , H01J37/3485
Abstract: PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.
Abstract translation: 提供了用于将材料沉积到移动的基底上的PECVD装置，其包括处理室，处理室的前体气体入口，泵送出口和设置在处理室内的等离子体源。 等离子体源产生一个或多个负辉光区和一个或多个正列。 向衬底设置至少一个正极柱。 等离子体源和前体气体入口相对于彼此和基底设置，使得前体气体被注入邻近基底的正极柱中。 提供了将前体气体引导到远离负辉光区域的正柱中的装置。
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38.发明申请
公开(公告)号：WO2009052874A1
公开(公告)日：2009-04-30
申请号：PCT/EP2008/003525
申请日：2008-04-30
Applicant: HAUZER TECHNO COATING BV , TIETEMA, Roel , PAPA, Frank , SESINK, Geert , THOMASITA, René
Inventor： TIETEMA, Roel , PAPA, Frank , SESINK, Geert , THOMASITA, René
IPC: H01J37/34
CPC classification number: H01J37/3405 , H01J37/3299 , H01J37/3429 , H01J37/3444 , H01J37/3467 , H01J37/3485
Abstract: A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes (1, 4) for operation in the dual magnetron sputtering mode, there being a means (9, 10) for supplying a flow of reactive gas to each of said first and second cathodes via first and second flow control valves (12, 14) each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feedback signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode. Also claimed is a magnetron sputtering apparatus in combination with such a power supply.
Abstract translation: 一种双磁控溅射电源，其用于具有至少第一和第二溅射阴极（1,4）的磁控溅射装置，用于在双磁控溅射模式下操作，存在用于提供反应性流动的装置（9,10） 经由第一和第二流量控制阀（12,14）分别与所述第一和第二阴极中的相应一个相连接，并且各自适于控制到分别相关联的阴极的反应气体的流动， 对于所述第一和第二阴极中的每一个，电源具有用于导出与在该阴极处存在的电压相关的反馈信号的装置，用于通过控制相应的流量控制阀来控制反应气体流向相应的阴极的控制电路 并且适于调节相应的流量控制阀以从相应的阴极获得对应于为该阴极设定的设定值的电压反馈信号 即 还要求保护的是与这种电源组合的磁控溅射装置。
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公开(公告)号：EP2789006B1
公开(公告)日：2018-10-31
申请号：EP12810067.4
申请日：2012-11-23
Applicant: Oerlikon Surface Solutions AG, Pfäffikon
Inventor： KRASSNITZER, Siegfried
CPC classification number: C23C14/3485 , C23C14/0094 , H01J37/3467 , H01J37/3485
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公开(公告)号：EP2473650A4
公开(公告)日：2015-09-02
申请号：EP10814629
申请日：2010-09-07
Applicant: GEN PLASMA INC
Inventor： MADOCKS JOHN
IPC: C23C16/50 , C23C16/448 , C23C16/455 , C23C16/458 , H01J37/34
CPC classification number: C23C16/448 , C23C16/45514 , C23C16/50 , H01J37/3408 , H01J37/3485
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