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公开(公告)号：CN101996919B
公开(公告)日：2012-07-25
申请号：CN201010262547.0
申请日：2010-08-24
Applicant: 佳能安内华股份有限公司
CPC classification number: H01L21/682 , C23C14/042 , H01J37/3405 , H01J37/3447 , H01J37/3485
Abstract: 本发明提供基板保持设备、掩模定位方法以及真空处理设备，以及能够减少粒子的产生并且以高精度定位掩模的掩模定位机构，其中，真空处理设备包括该掩模定位机构。根据本发明的一个实施方式的掩模定位机构包括：基板保持件，当基板被传送时，该基板保持件能上下移动，并且在该基板保持件上形成有四个锥状销；和掩模，在该掩模中形成有槽。锥状销能够分别被插入槽中。锥状销包括一对长锥状销和一对短锥状销。每一对锥状销都被布置成隔着基板彼此面对。形成于长锥状销的锥状面和形成于短锥状销的锥状面被定位在不同的高度。
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公开(公告)号：CN101996919A
公开(公告)日：2011-03-30
申请号：CN201010262547.0
申请日：2010-08-24
Applicant: 佳能安内华股份有限公司
CPC classification number: H01L21/682 , C23C14/042 , H01J37/3405 , H01J37/3447 , H01J37/3485
Abstract: 本发明提供基板保持设备、掩模定位方法以及真空处理设备，以及能够减少粒子的产生并且以高精度定位掩模的掩模定位机构，其中，真空处理设备包括该掩模定位机构。根据本发明的一个实施方式的掩模定位机构包括：基板保持件，当基板被传送时，该基板保持件能上下移动，并且在该基板保持件上形成有四个锥状销；和掩模，在该掩模中形成有槽。锥状销能够分别被插入槽中。锥状销包括一对长锥状销和一对短锥状销。每一对锥状销都被布置成隔着基板彼此面对。形成于长锥状销的锥状面和形成于短锥状销的锥状面被定位在不同的高度。
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公开(公告)号：CN108728809A
公开(公告)日：2018-11-02
申请号：CN201810230437.2
申请日：2018-03-20
Applicant: SPTS科技有限公司
IPC: C23C14/35
CPC classification number: H01J37/3408 , C23C14/345 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3452 , H01J37/3467 , H01J37/347 , H01J37/3485 , H01L21/2855 , H01L21/76877
Abstract: 本发明公开了一种控制脉冲直流物理气相沉积(PVD)形成的材料层中应力变化的方法及设备。该方法包以下步骤：设置一腔室，其包括形成材料层的靶和在其上能够形成材料层的衬底；以及向腔室内引入气体。该方法还包括在腔室内生成等离子体并且将第一磁场施加到靶附近以将所述等离子体基本上定位成邻近该靶。RF偏压被施加到衬底上以将来自等离子体的气体离子吸引到衬底上，并且第二磁场被施加在衬底附近以将来自等离子体的气体离子引导到形成在衬底上的材料层上的选择性区域。
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公开(公告)号：CN104272429B
公开(公告)日：2016-08-24
申请号：CN201280069085.8
申请日：2012-11-23
Applicant: 欧瑞康表面解决方案股份公司 , 普费菲孔
Inventor： S·克拉斯尼策尔
CPC classification number: C23C14/3485 , C23C14/0094 , H01J37/3467 , H01J37/3485
Abstract: 本发明涉及一种用于反应溅射的方法，其中借助离子轰击，材料从第一靶子的表面脱离并且过渡到气相，其中在该靶子上如此以脉冲方式施加负电压，使得在靶子表面上产生电流密度大于0.5A/cm2的电流，以便过渡到气相的材料至少部分被离子化并且其中构建反应气体流，并且反应气体与靶子表面的材料反应，其特征在于，如此选择电压脉冲的持续时间，使得在电压脉冲期间靶子表面在电流流动的一个或者多个位置大部分时间至少部分地用由反应气体和靶子材料组成的化合物覆盖，并且因此靶子表面处于第一中间状态，以及该覆盖在电压脉冲结束时小于电压脉冲开始时，因此靶子表面在电压脉冲结束时处于第二中间状态。
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公开(公告)号：CN104272429A
公开(公告)日：2015-01-07
申请号：CN201280069085.8
申请日：2012-11-23
Applicant: 欧瑞康贸易股份公司(特吕巴赫)
Inventor： S·克拉斯尼策尔
CPC classification number: C23C14/3485 , C23C14/0094 , H01J37/3467 , H01J37/3485
Abstract: 本发明涉及一种用于反应溅射的方法，其中借助离子轰击，材料从第一靶子的表面脱离并且过渡到气相，其中在该靶子上如此以脉冲方式施加负电压，使得在靶子表面上产生电流密度大于0.5A/cm2的电流，以便过渡到气相的材料至少部分被离子化并且其中构建反应气体流，并且反应气体与靶子表面的材料反应，其特征在于，如此选择电压脉冲的持续时间，使得在电压脉冲期间靶子表面在电流流动的一个或者多个位置大部分时间至少部分地用由反应气体和靶子材料组成的化合物覆盖，并且因此靶子表面处于第一中间状态，以及该覆盖在电压脉冲结束时小于电压脉冲开始时，因此靶子表面在电压脉冲结束时处于第二中间状态。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180308670A1
公开(公告)日：2018-10-25
申请号：US15899634
申请日：2018-02-20
Applicant: SPTS Technologies Limited
Inventor： ANTHONY WILBY , STEVE BURGESS , IAN MONCRIEFF , CLIVE WIDDICKS , SCOTT HAYMORE , RHONDA HYNDMAN
IPC: H01J37/34 , C23C14/35 , C23C14/34 , H01L21/285 , H01L21/768
CPC classification number: H01J37/3408 , C23C14/345 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3485 , H01L21/2855 , H01L21/76877
Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US20180269044A1
公开(公告)日：2018-09-20
申请号：US15463159
申请日：2017-03-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Stephen L. Brown , Bruce B. Doris , Mark C. Reuter
CPC classification number: H01J37/3485 , C23C14/24 , C23C14/3414 , H01J37/32 , H01J37/3426 , H01J37/3447 , H01J2237/0203 , H01J2237/081 , H01J2237/3322
Abstract: A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
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公开(公告)号：US11961722B2
公开(公告)日：2024-04-16
申请号：US18074496
申请日：2022-12-04
Applicant: SPTS Technologies Ltd.
Inventor： Anthony Wilby , Steve Burgess , Ian Moncrieff , Clive Widdicks , Scott Haymore , Rhonda Hyndman
IPC: H01J37/34 , B81B3/00 , C23C14/34 , C23C14/35 , C23C14/50 , H01J37/32 , H01L21/02 , H01L21/285 , H01L21/768
CPC classification number: H01J37/3408 , B81B3/0072 , C23C14/345 , C23C14/3471 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3452 , H01J37/3467 , H01J37/347 , H01J37/3485 , H01L21/02178 , H01L21/02266 , H01L21/2855 , H01L21/76877 , B81C2201/017 , B81C2201/0181
Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US20160247667A1
公开(公告)日：2016-08-25
申请号：US15045639
申请日：2016-02-17
Applicant: CANON ANELVA CORPORATION
Inventor： Yohsuke Shibuya
CPC classification number: H01J37/3476 , B08B7/00 , C23C14/3407 , C23C14/3414 , C23C14/35 , C23C14/564 , H01J37/3405 , H01J37/3455 , H01J37/3461 , H01J37/3482 , H01J37/3485
Abstract: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
Abstract translation: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括：能够在目标表面上形成磁场的磁体单元; 能够驱动磁体单元来改变磁场图形的旋转系统; 以及电流计，被配置为当由磁体单元形成磁场时测量目标电流，并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置，并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁，从而可以仅对必需的部分执行清洁。
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公开(公告)号：EP2473650A2
公开(公告)日：2012-07-11
申请号：EP10814629.1
申请日：2010-09-07
Applicant: General Plasma, Inc.
Inventor： MADOCKS, John
IPC: C23C16/50 , C23C16/455 , C23C16/458
CPC classification number: C23C16/448 , C23C16/45514 , C23C16/50 , H01J37/3408 , H01J37/3485
Abstract: PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region.
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