公开(公告)号：US07682452B2

公开(公告)日：2010-03-23

申请号：US11783358

申请日：2007-04-09

Applicant: John O. Outwater

Inventor： John O. Outwater

IPC: C30B15/34

CPC classification number: C30B15/34 ,  C30B29/20 ,  Y10T117/1036

Abstract: A method and apparatus for eliminating voids and improving crystal quality in shaped ceramic product, e.g. sapphire fiber or silicon sheet, from a melt by using a sloped die tip. The sloped die tip or array thereof comprises an outer sidewall which is sloped outwardly at an angle of 5° to 40° from the vertical.

Abstract translation: 一种用于消除成型陶瓷产品中的空隙和改善晶体质量的方法和装置，例如。 蓝宝石纤维或硅片，通过使用倾斜的模头从熔体中获得。 倾斜的模尖或其阵列包括外侧壁，其以与垂直方向成5°至40°的角度向外倾斜。

公开(公告)号：US07473317B2

公开(公告)日：2009-01-06

申请号：US11884836

申请日：2006-03-09

Applicant: Yoshiaki Hagi

Inventor： Yoshiaki Hagi

IPC: C30B35/00

CPC classification number: C30B11/002 ,  C30B29/42 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1036

Abstract: A crystal growth crucible made of boron nitride includes a cylindrical tip portion for accommodating a seed crystal, and a cylindrical straight-body portion for growing a crystal, which is formed above the tip portion and has a diameter larger than that of the tip portion. Thickness T1 of the tip portion and thickness T2 of the straight-body portion satisfy a condition of 0.1 mm≦T2

Abstract translation: 由氮化硼制成的晶体生长坩埚包括用于容纳晶种的圆柱形尖端部分和用于生长晶体的圆柱形直体部分，其形成在尖端部分上方并且具有比尖端部分的直径更大的直径。 直线部分的厚度T1和直体部分的厚度T2满足0.1mm <= T2

公开(公告)号：US20080282972A1

公开(公告)日：2008-11-20

申请号：US12219801

申请日：2008-07-29

Applicant: Neil J. D'Souza ,  Philip A. Jennings ,  Keerthi Devendra

Inventor： Neil J. D'Souza ,  Philip A. Jennings ,  Keerthi Devendra

IPC: C30B28/10

CPC classification number: C30B11/14 ,  C30B29/52 ,  F01D5/28 ,  F05D2230/211 ,  F05D2300/606 ,  F05D2300/607 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1036

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilisation of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2. In such circumstances, a connector channel can be provided with a radius r=R/4 in an area between the periphery of the seed and the locus of the stray grain maximum ingress distances d. In situations where it is found d exceeds the crystal radius R, it will be understood that the actual crystal diameter R used may be increased or adjustment made with regard to the melt-back length LM in order to alter the maximum ingress distance d.

Abstract translation: 以前已经使用许多技术来形成单晶或预定的晶体学组件和制品。 这些技术中的每一种都有自己的特殊问题，包括对误差的敏感性。 通过利用双晶实验来确定熔体回缩长度LM，并且考虑到晶种周边上潜在的起始成核点的入口距离d，可以确定最大入口长度d。 通过确保最大入口长度d小于或等于籽晶直径R，可以将位点从潜在成核点C 1，C 2 2投影到 杂散粒子传播的潜在半径条件。 由于晶种将具有已知的晶体取向，所以可以考虑晶体的两个发散生长曲线，就是从点C 1，C 2 2传播的杂散晶粒， / SUB>。 在这种情况下，连接器通道可以在种子周边与杂散颗粒最大进入距离d的轨迹之间的区域中具有半径r = R / 4。 在发现d超过晶体半径R的情况下，可以理解，为了改变最大入口距离d，所使用的实际晶体直径R可以增加或相对于熔体返回长度LM进行调整。

公开(公告)号：US20080196209A1

公开(公告)日：2008-08-21

申请号：US11916898

申请日：2006-05-10

Applicant: Kenneth Friestad

Inventor： Kenneth Friestad

IPC: B01D9/02

CPC classification number: C30B29/06 ,  C30B11/003 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1036 ,  Y10T117/1044 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088

Abstract: A method for the directional solidification of silicon or other materials. A cooled plate is lowered into a silicon melt and an ingot of solid silicon is solidified downwards

Abstract translation: 硅或其他材料的定向固化的方法。 冷却的板被降低成硅熔体，固体硅锭向下固化

公开(公告)号：US20070062571A1

公开(公告)日：2007-03-22

申请号：US11508161

申请日：2006-08-23

Applicant: Takahiro Hayashi

Inventor： Takahiro Hayashi

IPC: H01L35/34

CPC classification number: H01L35/34 ,  Y10T117/10 ,  Y10T117/1036

Abstract: A method of preparing a thermoelectric material includes the following steps. A thermoelectric raw material can be filled into a cavity of a first mold so that the thermoelectric raw material filled in the cavity has first and second dimensions. The first dimension can be defined in a first direction. The second dimension can be defined in a second direction. The second direction can be perpendicular to the first direction. The first dimension can be equal to or greater than the second dimension. The thermoelectric raw material filled in the cavity can be cooled in a uniaxial direction that is parallel to the second direction at a cooling rate of at least 600° C./min.

Abstract translation: 制备热电材料的方法包括以下步骤。 可以将热电原料填充到第一模具的空腔中，使得填充在空腔中的热电原材料具有第一和第二尺寸。 可以在第一方向上定义第一尺寸。 第二维度可以在第二个方向上定义。 第二方向可以垂直于第一方向。 第一维度可以等于或大于第二维度。 填充在空腔中的热电原料可以以至少600℃/分钟的冷却速度在与第二方向平行的单轴方向上冷却。

公开(公告)号：US06562132B2

公开(公告)日：2003-05-13

申请号：US09826073

申请日：2001-04-04

Applicant: Brian H. Mackintosh ,  Marc Ouellette

Inventor： Brian H. Mackintosh ,  Marc Ouellette

IPC: C30B1534

CPC classification number: C30B29/06 ,  C30B15/20 ,  C30B15/34 ,  Y10T117/10 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1056 ,  Y10T117/1068

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

公开(公告)号：US5370078A

公开(公告)日：1994-12-06

申请号：US983776

申请日：1992-12-01

Applicant: Sindo Kou ,  Ming-Hsien Lin

Inventor： Sindo Kou ,  Ming-Hsien Lin

IPC: C30B15/24 ,  C30B15/22

CPC classification number: C30B15/24 ,  Y10T117/1032 ,  Y10T117/1036

Abstract: Growth of monocrystalline rods from a bulk melt is carried out by a modified Czochralski process using a float which floats on the bulk melt held in a crucible. Melt flows through a passageway in the float to a crystal growth zone at a rate which prevents diffusion of dopant from the growth zone to the bulk melt. The shape of the crystal may be determined by a shaper wall in the float which defines the growth zone, in which case the crystal body is pulled from the float as it grows without rotating the crystal. The temperature of the float near the shaper wall may be monitored and controlled to control the crystallization process.

Abstract translation: 来自大块熔体的单晶棒的生长通过使用漂浮在保持在坩埚中的体积熔体上的浮子的改进的Czochralski工艺进行。 熔体以防止掺杂剂从生长区扩散到主体熔体的速率流过浮子中的通道到晶体生长区。 晶体的形状可以通过限定生长区的浮子中的整形墙来确定，在这种情况下，当浮体在不旋转晶体的情况下，晶体从浮子中拉出。 可以监测和控制靠近整形器壁的浮子的温度以控制结晶过程。

公开(公告)号：US4317799A

公开(公告)日：1982-03-02

申请号：US248819

申请日：1981-03-30

Applicant: John B. Serafino ,  William A. Kmetz

Inventor： John B. Serafino ,  William A. Kmetz

IPC: C30B15/30 ,  C30B15/34 ,  C30B29/64 ,  C30B35/00

CPC classification number: C30B15/34 ,  C30B15/30 ,  Y10T117/102 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1044 ,  Y10T117/1072

Abstract: A belt-roller crystal pulling mechanism is described. The belt-roller comprises a single driven belt having a vertical run, and a set of pivotally mounted follower rollers for urging the growing crystal in contact with the belt. The pivot mount enables bends or buckles in the crystal to go through the belt and rollers without causing wiggle at the growth interface which might otherwise cause the growing crystal to break free from the meniscus.

Abstract translation: 描述了带辊式晶体拉动机构。 带辊包括具有垂直行程的单个从动带，以及一组可枢转地安装的从动辊，用于促使生长的晶体与带接触。 枢轴支架使得晶体中的弯曲或带扣能够穿过带和辊而不会在生长界面处发生摆动，否则可能会使生长的晶体从弯月面脱离。

公开(公告)号：US4310492A

公开(公告)日：1982-01-12

申请号：US151877

申请日：1980-05-21

Applicant: Masae Nakanishi ,  Kiyoshi Nakamura ,  Syozo Kawasaki

Inventor： Masae Nakanishi ,  Kiyoshi Nakamura ,  Syozo Kawasaki

IPC: C04B35/584 ,  C30B15/24 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208 ,  C30B15/34 ,  C30B35/00

CPC classification number: C30B27/02 ,  C30B15/24 ,  Y10S117/90 ,  Y10T117/1036

Abstract: An apparatus for making a single crystal which includes a sealed vessel, a crucible received in the sealed vessel to hold a molten liquid and a floating member having an opening for defining the cross sectional outline of a single crystal while being grown and floating on the molten liquid. The floating member is made from a sintered body consisting essentially of at least one of the oxides of yttrium and the lanthanum series elements, aluminum oxide, aluminum nitride and silicon nitride each in a prescribed amount.

Abstract translation: 一种用于制造单晶的装置，其包括密封容器，容纳在密封容器中以保持熔融液体的坩埚和具有用于限定单晶的横截面轮廓的开口的浮动部件，同时生长并漂浮在熔融 液体。 浮动构件由基本上由钇和镧系元素的氧化物，氧化铝，氮化铝和氮化硅中的至少一种组成的烧结体制成，各自为规定量。

公开(公告)号：US3915656A

公开(公告)日：1975-10-28

申请号：US38617673

申请日：1973-08-06

Applicant: TYCO LABORATORIES INC

Inventor： MLAVSKY ABRAHAM I ,  PANDISCIO NICHOLAS A

IPC: C30B15/00 ,  C30B15/34 ,  B01J17/18

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B15/005 ,  C30B29/60 ,  Y10S117/902 ,  Y10S117/911 ,  Y10T117/102 ,  Y10T117/1036 ,  Y10T117/104 ,  Y10T117/1072

Abstract: The invention is an improved apparatus for producing monocrystalline bodies of alumina (or other materials) that are characterized by varying cross-sections, for example, a sapphire tube having an internal flange. The apparatus comprises a novel die arrangement adapted to support a thin film of melt from which the crystalline body is grown, the die being adjustable to change the configuration of the film and thereby vary the shape of the body being grown.

Abstract translation: 本发明是用于生产以不同横截面为特征的氧化铝（或其它材料）的单晶体的改进装置，例如具有内凸缘的蓝宝石管。 该装置包括适于支撑结晶体生长的熔体薄膜的新型管芯装置，该模具可调整以改变膜的构型，从而改变正在生长的身体的形状。