公开(公告)号：US20030022515A1

公开(公告)日：2003-01-30

申请号：US10199328

申请日：2002-07-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Seiji Nakagawa

IPC: H01L021/302 ,  B05D003/04 ,  B05D003/12

CPC classification number: H01L21/02282 ,  B05D1/005 ,  B05D3/0406 ,  B05D3/0466 ,  B05D3/107 ,  H01L21/02337 ,  H01L21/312

Abstract: A material film forming method is provided which comprises coating a liquid material on a surface of a substrate to form a material film of the liquid material the on the surface of the substrate, while rotating the substrate, and drying the material film, while rotating the substrate and letting air or nitrogen gas blow onto a predetermined area of the material film.

Abstract translation: 提供了一种材料膜形成方法，其包括在基板的表面上涂覆液体材料，以在旋转基板的同时在基板的表面上形成液体材料的材料膜，并且在旋转所述材料膜的同时， 衬底并使空气或氮气吹到材料膜的预定区域上。

公开(公告)号：US20020155224A1

公开(公告)日：2002-10-24

申请号：US10057569

申请日：2002-01-25

Applicant: MacDermid Colorspan, Incorporated

Inventor： Peter D. Schmidt ,  Uyen Q. Thai

IPC: B05D003/04 ,  C09D011/02

CPC classification number: C09D11/40 ,  D06P1/60 ,  D06P1/613 ,  D06P1/65118 ,  D06P5/30

Abstract: A dye-based, thermal ink jet printer ink is formulated by combining a water miscible organic solvent, water, and a dye, and blending the water miscible organic solvent, the water, and the dye together. The ink has the ability to form printed images on a variety of textile media and can be used to achieve acceptable results on both coated silk and coated cotton substrates. Also included is a method of making the ink jet ink and a method of applying the ink to a recording medium.

Abstract translation: 通过组合水混溶性有机溶剂，水和染料，并将水混溶的有机溶剂，水和染料混合在一起来配制染料基热喷墨打印机油墨。 油墨具有在各种纺织品介质上形成印刷图像的能力，并且可以用于在涂覆的丝和涂布的棉基材上获得可接受的结果。 还包括制备喷墨油墨的方法和将油墨施加到记录介质的方法。

公开(公告)号：US20020148563A1

公开(公告)日：2002-10-17

申请号：US10076250

申请日：2002-02-11

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson ,  Paul B. Comita ,  Norma B. Riley ,  Dale R. Du Bois

IPC: C23C016/00 ,  C23F001/00 ,  B05D003/04

CPC classification number: H01L21/67167 ,  C01B13/10 ,  C30B29/06 ,  C30B33/005 ,  H01L21/67017 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S414/139

Abstract: According to one aspect of the invention, a method of processing a wafer is provided. The wafer is located in a wafer processing chamber of a system for processing a wafer. A silicon layer is then formed on the wafer while the wafer is located in the wafer processing chamber. The wafer is then transferred from the wafer processing chamber to a loadlock chamber of the system. Communication between the processing chamber and the loadlock chamber is closed off. The wafer is then exposed to ozone gas while located in the loadlock chamber, whereafter the wafer is removed from the loadlock chamber out of the system.

Abstract translation: 根据本发明的一个方面，提供了一种处理晶片的方法。 晶片位于用于处理晶片的系统的晶片处理室中。 然后在晶片上形成硅层，同时晶片位于晶片处理室中。 然后将晶片从晶片处理室转移到系统的负载锁定室。 处理室和负载锁定室之间的通信被关闭。 然后将晶片暴露于臭氧气体，同时位于负载锁定室中，此后将晶片从负载锁定室移出系统外。

公开(公告)号：US20020132052A1

公开(公告)日：2002-09-19

申请号：US09903114

申请日：2001-07-11

Inventor： Devendra Kumar ,  Jeffrey D. Womack ,  Vuong P. Nguyen ,  Jack S. Kasahara ,  Sokol Ibrani

IPC: B05D003/04 ,  B05D003/02

CPC classification number: H01L21/02282 ,  H01L21/02 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02337 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/67109

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract translation: 用于制造具有低k特性和低折射率的膜的单晶片处理方法和系统。 该方法包括处理站，其中固化和后固化，原位气体冷却发生。

公开(公告)号：US20020081396A1

公开(公告)日：2002-06-27

申请号：US09371826

申请日：1999-08-11

Inventor： CHIEN-WEI LI ,  DEREK RAYBOULD ,  MILTON ORTIZ ,  THOMAS EDWARD STRANGMAN

IPC: C23C016/00 ,  B05D003/02 ,  B05D003/04 ,  B05D001/02 ,  B05D001/28

CPC classification number: C23C16/405 ,  C04B35/584 ,  C04B35/6263 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2235/3213 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3826 ,  C04B2235/483 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/77 ,  C23C26/00 ,  F01D5/284 ,  F01D5/288 ,  C04B41/0072 ,  C04B41/4517 ,  C04B41/4539 ,  C04B41/4578 ,  C04B41/4582 ,  C04B41/4596 ,  C04B41/5066 ,  C04B41/4515 ,  C04B41/4535 ,  C04B41/4554 ,  C04B41/457 ,  C04B41/5059 ,  C04B41/4519 ,  C04B41/4529 ,  C04B41/455 ,  C04B41/5027 ,  C04B41/4523 ,  C04B41/522

Abstract: A turbomachine component includes a silicon nitride substrate and a multi-layer coating bonded to the substrate. The coating includes an interlayer of porous fibrous silicon nitride having a density of between 85-98%. The coating also includes an outer layer formed of an oxide compound, preferably tantalum oxide, that is applied by Electron Beam-Physical Vapor Deposition. The combination of the silicon nitride interlayer and tantalum oxide outer layer serves to protect the substrate from the adverse affects of oxidation, impact by foreign objects and extreme operating temperatures.

Abstract translation: 涡轮机组件包括氮化硅衬底和结合到衬底的多层涂层。 涂层包括密度在85-98％之间的多孔纤维状氮化硅夹层。 该涂层还包括由氧化物化合物形成的外层，优选氧化钽，其通过电子束物理气相沉积施加。 氮化硅中间层和氧化钽外层的组合用于保护衬底免受氧化的不利影响，异物的冲击和极端的工作温度。

公开(公告)号：US20020034585A1

公开(公告)日：2002-03-21

申请号：US09948572

申请日：2001-09-10

Applicant: JSR CORPORATION

Inventor： Yasuo Matsuki ,  Yasuaki Yokoyama ,  Yasumasa Takeuchi ,  Masahiro Furusawa ,  Ichio Yudasaka ,  Satoru Miyashita ,  Tatsuya Shimoda

IPC: B05D003/04 ,  B05D003/02 ,  C23C016/00

CPC classification number: C23C16/24

Abstract: A process capable of forming a silicon film on a substrate efficiently, for example, at a high yield and a high forming rate with simple operation and device unlike CVD and plasma CVD. A process for forming a silicon film on a substrate by thermally decomposing at least one silicon compound selected from the group consisting of cyclopentasilane and silylcyclopentasilane in the presence of an inert organic medium vapor under atmospheric pressure.

Abstract translation: 与CVD和等离子体CVD不同，能够以简单的操作和装置，例如以高产率和高成形速率有效地在衬底上形成硅膜的工艺。 在大气压下，在惰性有机介质蒸气的存在下，通过热分解至少一种选自环戊硅烷和甲硅烷基环戊硅烷的硅化合物，在基板上形成硅膜的方法。

公开(公告)号：US20010051281A1

公开(公告)日：2001-12-13

申请号：US09923218

申请日：2001-08-06

Applicant: Paper Technology Foundation Inc.

Inventor： Blair Alex Owens ,  Dimitris Ioannis Collias ,  Andrew Julian Wnuk

IPC: B32B029/00 ,  B05D003/10 ,  B05D003/04

CPC classification number: C08H6/00 ,  C08G73/02 ,  C08G73/022 ,  C08G73/0226 ,  C08G73/0286 ,  C08G73/0293 ,  D21H17/23 ,  D21H17/56 ,  Y10T428/31993

Abstract: The bleeding of lignosulfonates from lignosulfonate-treated substrates when contacted under humid conditions is reduced by rendering the lignosulfonates water-insoluble via reacting them with an amine polymer-epichlorohydrin adduct containing at least one quaternary ammonium group under acidic conditions.

公开(公告)号：US20010046565A1

公开(公告)日：2001-11-29

申请号：US09899923

申请日：2001-07-09

Inventor： Cyprian E. Uzoh ,  Peter S. Locke

IPC: B05D003/00 ,  B05D003/04 ,  B05D003/10 ,  B05D001/18 ,  H01L027/095 ,  B21C001/00 ,  B32B001/00 ,  B21F001/00 ,  H01F001/16 ,  H01B001/00 ,  B22D003/00 ,  H01F003/00 ,  H01F003/02 ,  H01F003/04 ,  H01F003/06 ,  B22D005/00 ,  B22D007/00 ,  B22D009/00 ,  B22D011/00 ,  B22D023/00 ,  B22D025/00 ,  H01L029/12 ,  B22D021/00

CPC classification number: H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/12 ,  Y10T428/12528 ,  Y10T428/239 ,  Y10T428/24917

Abstract: A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80null C. to about 130null C. Metal is plated on the seedlayer.

Abstract translation: 在亚微米结构中电镀金属的方法。 种子层沉积在亚微米结构的表面上。 种子层在约80℃至约130℃的温度下退火。将金属镀在种子层上。

公开(公告)号：US20010041223A1

公开(公告)日：2001-11-15

申请号：US09233273

申请日：1999-01-19

Inventor： CHARLES JOHN GILFERT ,  DIMITRIS IOANNIS COLLIAS ,  STEVEN MICHAEL SCHENNUM

IPC: B05D003/02 ,  B05D003/12 ,  B05D003/04

CPC classification number: D21H25/06 ,  D21H17/23 ,  D21H17/66 ,  D21H21/18

Abstract: The present invention relates to a process of using steam to achieve simultaneous impregnation and drying of lignocellulosic material to improve the strength of lignocellulosic material and to reduce the number of serial processing steps. The steam may be either indigenously generated by way of a heated press or heated nip, or the steam may be externally applied.

Abstract translation: 本发明涉及使用蒸汽来实现木质纤维素材料的同时浸渍和干燥以提高木质纤维素材料的强度并减少串联加工步骤的数量的方法。 蒸汽可以通过加热压力机或加热辊隙本征产生，或者蒸汽可以在外部施加。

公开(公告)号：US20010010837A1

公开(公告)日：2001-08-02

申请号：US09726552

申请日：2000-12-01

Inventor： Kuniaki Horie ,  Akira Fukunaga

IPC: B05D003/02 ,  B05D003/04 ,  B05C011/00

CPC classification number: C23C24/087 ,  C23C8/02 ,  C23C24/106

Abstract: A thin film of metal or metal compound is produced by preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least partly made of metal into a given organic solvent, applying the ultrafine particle dispersion liquid to a substrate, drying the ultrafine particle dispersion liquid to leave metal or metal compound particles on the substrate, heating the metal or metal compound particles to join the metal or metal compound particles, and annealing the metal or metal compound particles into a thin film.

Abstract translation: 通过将至少部分由金属制成的超微粒子分散在规定的有机溶剂中，通过将特细微粒分散液分散在基材上，将超细粒子分散液干燥，将超细粒子分散液干燥，得到金属或金属化合物的薄膜 在基板上留下金属或金属化合物颗粒，加热金属或金属化合物颗粒以接合金属或金属化合物颗粒，并将金属或金属化合物颗粒退火成薄膜。