公开(公告)号：US20030064653A1

公开(公告)日：2003-04-03

申请号：US10254507

申请日：2002-09-26

Inventor： Tsuyoshi Takegami ,  Hisaaki Kawade ,  Takahiro Oguchi ,  Kazuhiro Jindai

IPC: H01J009/02

CPC classification number: H01J9/027

Abstract: It relates to a method of manufacturing an electron source. In an activation process, a set value of an activation gas partial pressure is switched at multi-stages and an application of a compensation voltage is not conducted for a predetermined period after switching of the set value. Alternatively, the activation is repeated plural times while a row wiring or a column wiring is switched, and the application of the compensation voltage is not conducted for the predetermined period after switching of the row wiring or the column wiring. Thus, activation processing can be uniformly performed for all electron emitting devices.

Abstract translation: 它涉及一种制造电子源的方法。 在激活过程中，激活气体分压的设定值以多级切换，并且在切换设定值之后，在预定时间段内不进行补偿电压的施加。 或者，在切换行布线或列布线的同时重复多次激活，并且在切换行布线或列布线之后的预定周期内不施加补偿电压。 因此，可以对所有电子发射器件均匀地执行激活处理。

公开(公告)号：US20030039767A1

公开(公告)日：2003-02-27

申请号：US10212758

申请日：2002-08-07

Inventor： Hironobu Mizuno ,  Masaharu Naka ,  Koki Nukanobu

IPC: B05D005/12 ,  H01J009/02

CPC classification number: H01J9/027

Abstract: To provide a method for manufacturing an electron source having electron-emitting devices with excellent electron-emitting property arranged on a substrate and enabling an image-forming apparatus capable of displaying an image with high brightness and uniformity to be enhanced in terms of screen size and production scale. The method for manufacturing the electron source includes a step of disposing a plurality of units and a plurality of wirings connected to the plurality of units on a substrate, each unit including a polymer film and a pair of electrodes with the polymer film interposed therebetween, and a step of forming electron-emitting devices from the plurality of units by repeatedly performing a process including a selecting substep of selecting a desired number of units from the plurality of units, a resistance-reducing substep of reducing resistance of the polymer films of the selected units and a gap-forming substep of forming a gap in each of the films formed by the resistance-reducing substep.

Abstract translation: 为了提供一种制造具有电子发射器件的电子源的方法，该电子源具有优良的电子发射特性，该电子发射器件具有优良的电子发射特性，该电子发射器件具有优良的电子发射特性，其布置在基片上， 生产规模。 制造电子源的方法包括将多个单元和连接到多个单元的多个布线布置在基板上的步骤，每个单元包括聚合物膜和一对电极，聚合物膜插入其间，并且 通过重复执行包括从多个单元中选择期望数量的单元的子步骤的选择的方法从多个单元形成电子发射器件的步骤，降低所选择的聚合物膜的电阻的电阻减少子步骤 单元和形成间隙的间隙形成子步骤，在由阻力减小子步骤形成的每个膜中形成间隙。

公开(公告)号：US20030027478A1

公开(公告)日：2003-02-06

申请号：US10209937

申请日：2002-08-02

Applicant: Samsung SDI Co., Ltd.

Inventor： Shang-Hyeun Park ,  Deuk-Seok Chung ,  Hang-Woo Lee

IPC: H01J009/02

CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: A method of fabricating a field emission display employing carbon nanotubes (CNTs) as electron emitters is provided. The method includes forming a cathode on a substrate; forming a gate insulation layer having a plurality of gate holes on the cathode; forming a gate electrode having a plurality of via-holes corresponding to the gate holes, respectively, on the gate insulation layer; forming a plurality of conductive columns higher than the gate electrode on the cathode within the respective gate holes; adhering the CNTs to the bottom of a plate template which is separately provided; bringing the bottom of the template having the CNTs to contact the tops of the conductive columns to adhere the CNTs to the tops of the conductive columns; and firing the conductive columns to lower the levels thereof. Accordingly, the problems of conventional methods, such as sinking of CNTs caused by screen printing, residual CNTs remaining within a gate when a lift-off method is used and short circuiting between gate and cathode due to the residual CNTs, can be solved. In addition, CNTs are applied to only a part for field emission, that is, only the top of a conductive column, thereby requiring fewer CNTs and decreasing fabrication cost.Moreover, the method uses stamping in order to form CNTs, so it is very advantageous in mass production.

Abstract translation: 提供了使用碳纳米管（CNT）作为电子发射体制造场致发射显示器的方法。 该方法包括在基板上形成阴极; 在所述阴极上形成具有多个栅极孔的栅极绝缘层; 在所述栅极绝缘层上分别形成具有与所述栅极孔对应的多个通孔的栅电极; 在各个门孔内形成比阴极上的栅电极高的多个导电柱; 将CNT粘附到单独提供的板模板的底部; 使具有CNT的模板的底部接触导电柱的顶部以将CNT粘附到导电柱的顶部; 并且烧制导电柱以降低其水平。 因此，可以解决常规方法的问题，例如由丝网印刷引起的CNT的沉没，使用剥离方法时残留在栅极内的残留CNT以及由于残留CNT而引起的栅极和阴极之间的短路。 此外，CNT仅用于场发射的一部分，即只有导电柱的顶部，从而需要更少的CNT并降低制造成本。此外，该方法使用冲压以形成CNT，因此它是非常 有利于批量生产。

公开(公告)号：US20020081931A1

公开(公告)日：2002-06-27

申请号：US09941782

申请日：2001-08-30

Inventor： Takashi Iwaki ,  Hironobu Mizuno ,  Masaaki Shibata ,  Kazuya Miyazaki

IPC: H01J009/02

CPC classification number: H01J9/027

Abstract: The present invention provides a method for manufacturing an electron-emitting device, comprising a step for forming a polymer film between a pair of electrodes formed on a substrate, a step for giving conductivity to the polymer film by heating, and a step for providing potential difference between the pair of electrodes.

Abstract translation: 本发明提供了一种制造电子发射器件的方法，包括在形成在衬底上的一对电极之间形成聚合物膜的步骤，通过加热使聚合物膜导电的步骤和提供电位的步骤 一对电极之间的差异。

公开(公告)号：US20020050776A1

公开(公告)日：2002-05-02

申请号：US09985654

申请日：2001-11-05

Inventor： Shinji Kubota ,  Kazuo Kikuchi ,  Hiroshi Sata

IPC: H01J009/02 ,  H01J001/304

CPC classification number: H01J9/025 ,  H01J2329/00

Abstract: A cold cathode field emission device comprising; (A) a cathode electrode formed on a support, (B) an insulating layer formed on the support and the cathode electrode, (C) a gate electrode formed on the insulating layer, (D) an opening portion which penetrates through the gate electrode and the insulating layer, and (E) an electron emitting portion which is positioned at a bottom portion of the opening portion and has a tip portion having a conical form and being composed of a crystalline conductive material, the tip portion of the electron emitting portion having a crystal boundary nearly perpendicular to the cathode electrode.

Abstract translation: 一种冷阴极场致发射器件，包括： （A）形成在支撑体上的阴极，（B）形成在支撑体和阴极上的绝缘层，（C）形成在绝缘层上的栅电极，（D）穿过栅电极 和（E）电子发射部分，其位于开口部分的底部并且具有圆锥形的尖端部分并且由结晶导电材料构成，电子发射部分的尖端部分 具有几乎垂直于阴极的晶体边界。

公开(公告)号：US20020030438A1

公开(公告)日：2002-03-14

申请号：US09990267

申请日：2001-11-23

Inventor： Takeo Ito ,  Sadao Miki ,  Kazuo Sakai

IPC: H01J001/304 ,  H01J009/02

CPC classification number: H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J2329/00

Abstract: Phosphor layers are formed on the inner surface of a face plate. An electron source device that emits electrons to excite the phosphor layers is provided on the inner surface of a base plate. The electron source device comprises an alumina substrate that has a number of small through holes. Electron-emitting material is buried in the through holes. A reference electrode is formed on the lower surface of the alumina substrate and contacts the electron-emitting material. A gate electrode is formed on the upper surface of the substrate and insulated from the electron-emitting material. The gate electrode is configured to concentrate an electron field of the electron-emitting material by virtue of an voltage applied between the reference electrode and the gate electrode, thereby to cause the electron-emitting material to emit electrons toward the phosphor layers.

Abstract translation: 荧光体层形成在面板的内表面上。 在基板的内表面上设置有发射电子以激发荧光体层的电子源装置。 电子源装置包括具有多个小通孔的氧化铝基板。 电子发射材料被埋在通孔中。 参考电极形成在氧化铝基板的下表面上并与电子发射材料接触。 栅电极形成在衬底的上表面上并与电子发射材料绝缘。 栅电极被配置为通过施加在参考电极和栅电极之间的电压来集中电子发射材料的电子场，从而使电子发射材料向荧光体层发射电子。

公开(公告)号：US20020006761A1

公开(公告)日：2002-01-17

申请号：US09939888

申请日：2001-08-27

Inventor： Ammar Derraa

IPC: H01J009/02

CPC classification number: H01J9/025

Abstract: A method for fabricating row lines and pixel openings of a field emission array that employs only two masks. A first mask is disposed over electrically conductive material and semiconductive material and includes apertures that are alignable between rows of pixels of the field emission array. Row lines of the field emission array are defined through the first mask. A passivation layer is then disposed over at least selected portions of the field emission array. A second mask, including apertures alignable over the pixel regions of the field emission array, is disposed over the passivation layer. The second mask is used in defining openings through the passivation layer and over the pixel regions of the field emission array. Conductive material exposed through the apertures of the second mask may also be removed to expose the underlying semiconductive grid and to further define the pixel openings.

公开(公告)号：US20010035706A1

公开(公告)日：2001-11-01

申请号：US09888125

申请日：2001-06-22

Inventor： Kanwal K. Raina ,  Ammar Derraa

IPC: H01J001/304 ,  H01J009/02

CPC classification number: H01J1/3044 ,  H01J9/025

Abstract: In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.

Abstract translation: 一方面，电子发射器件包括衬底和由衬底支撑的第一层。 第一层包括导电材料。 电子发射显示装置还包括与第一层电连接的电子发射尖端，以及电气设置在第一层和电子发射尖端之间的第二层。 第二层包括微晶硅。 另一方面，本发明包括形成电子发射装置的方法。 提供衬底，并且在衬底上形成导电层。 在导电层上形成微晶硅层，在微晶硅层上形成电阻层。 发射极尖端形成在电阻层上。 在其它方面，本发明包括场发射显示装置，以及形成场致发射显示装置的方法。

公开(公告)号：US20010016463A1

公开(公告)日：2001-08-23

申请号：US09847926

申请日：2001-05-03

Inventor： Ammar Derraa

IPC: H01J009/02

CPC classification number: H01J9/025

Abstract: A method of fabricating a field emission array that employs a single mask to define the emitter tips thereof and their corresponding resistors. A layer of conductive material is disposed over a substrate of the field emission array. A plurality of substantially mutually parallel conductive lines is defined from the layer of conductive material. At least one layer of semiconductive material or conductive material is disposed over the conductive lines and over the regions of the substrate exposed between adjacent conductive lines. A mask material is disposed over the layer of semiconductive material or conductive material, substantially above each of the conductive lines. Portions of the layer of semiconductive material or conductive material exposed through the mask material may be removed to expose substantially longitudinal center portions of the conductive lines. Other portions of the layer of semiconductive material or conductive material may remain over peripheral lateral edges of the conductive lines. The mask material may be removed and the layer of semiconductive material or conductive material planarized. A mask is disposed over the field emission array and portions of the layer of semiconductive material or conductive material removed therethrough to define emitter tips and their corresponding resistors. The substantially longitudinal center portion of each of the conductive lines may be removed to electrically isolate adjacent columns of pixels of the field emission array from each other. Field emission arrays fabricated by the method of the present invention are also within the scope of the present invention.

公开(公告)号：US20010015605A1

公开(公告)日：2001-08-23

申请号：US09784125

申请日：2001-02-16

Inventor： Masayuki Yoshiki

IPC: H01J001/30 ,  H01J009/02

CPC classification number: H01J1/304 ,  H01J9/025

Abstract: In a field emission film used for a field emission cathode, a filamentous structure layer is formed in the vicinity of tops of acicular projections to emit electrons. The filamentous structure layer serves to remarkably increase emission points and, as a result, to improve an emission current density. The filamentous structure layer may be composed of a carbon and is obtained by carrying out plasma processing within a hydrogen gas and/or an oxygen gas for a long time.

Abstract translation: 在用于场发射阴极的场致发射膜中，在针状突起的顶部附近形成丝状结构层，发射电子。 丝状结构层用于显着增加发射点，结果是提高发射电流密度。 丝状结构层可以由碳组成，并且通过在氢气和/或氧气中长时间进行等离子体处理而获得。