公开(公告)号：US6013986A

公开(公告)日：2000-01-11

申请号：US884702

申请日：1997-06-30

Applicant: N. Johan Knall ,  Duane A. Haven ,  Swayambu Ramani

Inventor： N. Johan Knall ,  Duane A. Haven ,  Swayambu Ramani

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.

Abstract translation: 电子发射器件采用多层电阻（46）。 电阻器的下层（48）覆盖发射电极（42）。 一组电子发射元件（54）覆盖电阻器的上层（50）。 每个电阻层从每个电子发射元件下方的位置连续延伸到彼此电子发射元件下方的位置。 两个电阻层的化学成分不同。 上电阻层通常由金属陶瓷形成。 下电阻层通常由硅 - 碳化合物形成。

公开(公告)号：US6011356A

公开(公告)日：2000-01-04

申请号：US70398

申请日：1998-04-30

Applicant: John L. Janning ,  Robert L. Clark

Inventor： John L. Janning ,  Robert L. Clark

IPC: H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J2201/319 ,  H01J2329/00

Abstract: For use in cathodoluminescent field emission display devices, a cathode emitter can comprise an inverted field effect transistor having a diamond film or other low effective work function material deposited onto the channel layer of the transistor, such that the diamond film provides a source of primary electron emissions. A variable voltage source is applied to the gate of the transistor creating an electric field that controls the conductivity of the channel layer, thereby activating or deactivating electron emissions from this cathode emitter structure. In addition, electron blocking junctions can be incorporated into the emitter structure to inhibit current flow through the device during a deactivated state. In a variation, the transistor of the cathode emitter has the diamond film being deposited onto an electrically conductive pad that is electrically connected to, and extending outwardly from, the transistor. Alternatively, a sideways laterally gated transistor structure can be used with the emitter surface being applied to the transistor's drain. A near mono-molecular oxide film of high secondary electron emission material can also be included on the emitter surface for enhanced electron emissions.

Abstract translation: 为了用于阴极发光场发射显示装置，阴极发射器可以包括具有沉积在晶体管的沟道层上的金刚石膜或其它低有效功函数材料的反向场效应晶体管，使得金刚石膜提供初级电子源 排放。 可变电压源被施加到晶体管的栅极，产生控制沟道层的导电性的电场，从而激活或去激活来自该阴极发射极结构的电子发射。 此外，电子阻挡接头可以结合到发射极结构中，以在去激活状态期间阻止电流流过器件。 在一个变型中，阴极发射器的晶体管具有金刚石膜，该金刚石膜被沉积到与晶体管电连接并从晶体管向外延伸的导电焊盘上。 或者，可以使用侧向横向门控晶体管结构，其中发射极表面被施加到晶体管的漏极。 高二次电子发射材料的近单分子氧化膜也可以包括在发射体表面上以增强电子发射。

公开(公告)号：US6011291A

公开(公告)日：2000-01-04

申请号：US803933

申请日：1997-02-21

Applicant: Stephen D. Russell ,  Randy L. Shimabukuro

Inventor： Stephen D. Russell ,  Randy L. Shimabukuro

IPC: H01J9/02 ,  H01J31/12 ,  H01L27/01 ,  H01J1/02 ,  H01J9/00 ,  H01J23/16

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/319

Abstract: A video display with integrated control circuitry formed on a single dielectric substrate, includes a dielectric substrate; emitter cathodes formed on the dielectric substrate for emitting electrons; a window plate mounted a fixed distance from the substrate to define a vacuum chamber therebetween; phosphors mounted to the window plate which generate light when irradiated with the electrons; and field effect transistors mounted to the substrate which are electrically interconnected to the emitter cathodes for selectively controlling light emissions from the phosphors.

Abstract translation: 具有集成控制电路的视频显示器，其形成在单个电介质基板上，包括电介质基板; 在电介质基板上形成的用于发射电子的发射极阴极; 安装在距基板一定距离的窗板，以在其间限定真空室; 安装在窗口板上的荧光体，其在用电子照射时产生光; 以及安装到衬底的场效应晶体管，其与发射极阴极电互连，用于选择性地控制来自磷光体的光发射。

公开(公告)号：US5973444A

公开(公告)日：1999-10-26

申请号：US191269

申请日：1998-11-12

Applicant: Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

Inventor： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/939

Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

公开(公告)号：US5910704A

公开(公告)日：1999-06-08

申请号：US723125

申请日：1996-09-30

Applicant: Dae-ho Choo

Inventor： Dae-ho Choo

IPC: H01J9/02 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01J29/467 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display includes a substrate with a plurality of cathode layers provided thereon. A plurality of micro tips are provided on each of the cathode layers. A plurality of gate insulating layers are also provided on the cathode layers, each of the gate insulating layers having a plurality of holes for accommodating each unit of the micro tips. A plurality of gate electrodes are provided on the gate insulating layers, each of the gate electrodes having a plurality of holes corresponding to each hole of the plurality of gate insulating layers, each of the plurality of gate insulating layers and each of the plurality of gate electrodes being alternately provided on each other.

Abstract translation: 场发射显示器包括其上设置有多个阴极层的衬底。 在每个阴极层上提供多个微尖端。 多个栅极绝缘层也设置在阴极层上，每个栅极绝缘层具有多个孔，用于容纳微单元的每个单元。 在栅极绝缘层上设置多个栅电极，每个栅电极具有与多个栅极绝缘层的每个孔对应的多个孔，多个栅绝缘层和多个栅极中的每一个 交替地设置电极。

公开(公告)号：US5851669A

公开(公告)日：1998-12-22

申请号：US446392

申请日：1995-05-22

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  D02C3/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.

Abstract translation: 适用于大面积平板电视的场致发射结构围绕位于位于支撑衬底的绝缘材料上的下导电区域的绝缘多孔层的周围。 电子发射细丝占据贯穿多孔层的孔。 导电栅极层，通过该导电栅极层在多孔层上覆盖位于中心的位置处的开口延伸。 通常在多孔层中沿其上表面设置同样以细丝为中心的位置。

公开(公告)号：US5847408A

公开(公告)日：1998-12-08

申请号：US824016

申请日：1997-03-21

Applicant: Seigo Kanemaru ,  Junji Itoh

Inventor： Seigo Kanemaru ,  Junji Itoh

IPC: H01J3/02 ,  H01L29/06

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes. An extraction voltage is applied to one of these electrodes closest to the emitter, another electrode is connected to an X selection line and another to a Y selection line, thereby controlling emission current.

Abstract translation: 具有简单结构的场致发射器件可实现场发射电流的稳定和控制。 发射电流由多个控制电压系统控制。 通过处理p型半导体衬底制造具有尖锐尖端的发射极，并且在与发射极横向分离的位置处在p型半导体衬底表面上设置n型源极区。 具有面向发射极顶点的孔的电极层设置在绝缘层上，电极层延伸到n型源极区域的上方。 电压施加到电极层，以将提取器场施加到发射极的顶点，并在p型半导体衬底的发射极表面和表面处诱导反转层。 电极层被分成多个电极。 将提取电压施加到最靠近发射极的这些电极之一，另一个电极连接到X选择线，而另一个电极连接到Y选择线，从而控制发射电流。

公开(公告)号：US5844250A

公开(公告)日：1998-12-01

申请号：US483853

申请日：1995-06-07

Applicant: Shigeo Itoh ,  Isao Yamada

Inventor： Shigeo Itoh ,  Isao Yamada

IPC: H01J9/02 ,  H01L29/12 ,  H01J1/14 ,  H01J1/48 ,  H01J9/12

CPC classification number: H01J9/025 ,  H01J2201/319 ,  H01J2209/015 ,  H01J2237/0812 ,  H01J2237/31732

Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.

Abstract translation: 提供一种制造场致发射元件的方法，该场致发射元件包括基片，以及各自布置在基片上的发射极和栅极。 发射极在其至少顶端形成电子放电部，该电子放电部由金属或半导体形成为单晶结构，或者通过沉积在至少沿垂直于衬底的方向优先取向的多晶结构。

公开(公告)号：US5838103A

公开(公告)日：1998-11-17

申请号：US865179

申请日：1997-05-29

Applicant: Nam-sin Park

Inventor： Nam-sin Park

IPC: H01J17/48 ,  H01J3/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission display and a method therefor, which can substantially improve uniformity of electrons emitted from numerous micro-tips formed to be applied to a flat panel display, by etching the edges of cathodes which are shaped into stripes and forming resistance portions in the etched areas, thereby improving an excessive etching and roughness made in etching a hole in an area for forming a micro-tip. Thus, the display is free of the decrease in tip-adhesion, so that the process efficiency can be increased up to 90% and the uniformity difference between the electrons emitted from a plurality of micro-tips can be maintained at .+-.5% in the edge and center of the cathode.

Abstract translation: 一种场致发射显示器及其方法，其通过蚀刻形成条纹的阴极的边缘并在蚀刻后的电阻部分中形成电阻部分，可以显着改善由形成为施加到平板显示器的多个微型尖端发射的电子的均匀性 从而改善在用于形成微尖端的区域中蚀刻孔中的过度蚀刻和粗糙度。 因此，显示器没有尖端附着力的降低，使得工艺效率可以提高高达90％，并且从多个微尖端发射的电子之间的均匀性差可以保持在+/- 5％ 在阴极的边缘和中心。

公开(公告)号：US5828163A

公开(公告)日：1998-10-27

申请号：US781289

申请日：1997-01-13

Applicant: Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

Inventor： Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.

Abstract translation: 场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。 在绝缘基板上沉积宽的列导体。 绝缘体放置在列导体上。 高电阻层被放置在绝缘体上并与柱导体物理隔离。 高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。 一组微尖端电子发射体放置在高电阻层上。 低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。 一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。 一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。 阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。