公开(公告)号：JPH0554095B2

公开(公告)日：1993-08-11

申请号：JP16839383

申请日：1983-09-14

Applicant: IMAI YOSHIO

Inventor： IMAI YOSHIO ,  SHONO HIROO

IPC: B41J2/525 ,  B41J3/00 ,  G03B27/73 ,  G03B33/08 ,  H04N1/393 ,  H04N1/40 ,  H04N1/46 ,  H04N1/60

公开(公告)号：JPH03287626A

公开(公告)日：1991-12-18

申请号：JP9057590

申请日：1990-04-05

Applicant: IMAI YOSHIO ,  MITSUBISHI CHEM IND

Inventor： IMAI YOSHIO ,  KAKIMOTO MASAAKI ,  MORIKAWA ATSUSHI ,  IYOKU YOSHITAKE

IPC: C08K3/36 ,  C08G73/10 ,  C08L79/08

Abstract: PURPOSE:To obtain a polyimide composition having a finely dispersed silica and excellent tensile modulus by mixing a polyamic acid with a specified compound in an organic polar solvent and cyclizing the polyamic acid through dehydration. CONSTITUTION:A polyamic acid [e.g. a polyamic acid obtained from bis(4- aminophenyl) ether and pyromellitic anhydride], an alkoxysilane and/or its partial hydrolytic condensate (e.g. tetraethoxysilane) and optionally water are mixed in an organic polar solvent (e.g. dimethylacetamide), and the polyamic acid is cyclized through dehydration.

公开(公告)号：JPH02237972A

公开(公告)日：1990-09-20

申请号：JP5802789

申请日：1989-03-13

Applicant: IMAI YOSHIO ,  SONKIYON IND LTD

Inventor： IMAI YOSHIO ,  KAKIMOTO MASAAKI ,  TEI KAZUCHIN

IPC: C07D207/335 ,  C07D207/323

公开(公告)号：JPH01242630A

公开(公告)日：1989-09-27

申请号：JP7072188

申请日：1988-03-24

Applicant: MITSUBISHI CHEM IND ,  IMAI YOSHIO ,  KAKIMOTO MASAAKI

Inventor： IMAI YOSHIO ,  KAKIMOTO MASAAKI ,  NISHIKATA YASUNARI ,  MORIKAWA ATSUSHI

IPC: H01L21/368 ,  C08G73/10 ,  C08J5/18 ,  C09K3/00 ,  G02F1/35 ,  G02F1/355 ,  G02F1/361

Abstract: PURPOSE:To form a monomolecular film or monomolecular built-up film having functions such as photoelectric transduction and magnetism or gas sensing and excellent in mechanical strengths, heat resistance and chemical resistance, by using a polyimide having a porphyrin structure as a constituting component. CONSTITUTION:This monomolecular film or monomolecular built-up film is prepared by using a polyimide having recurring units of formula I {wherein R is a tetravalent aromatic organic group (e.g., a group of formula II or III), R is porphyrin ring-containing bivalent aromatic organic group [e.g., a group of formula IV or V (wherein M is a metal such as Fe, Mg or Pb)]}. This film has functions such as photoelectric transduction and magnetism or gas sensing, excels in mechanical strengths, heat resistance and chemical resistance, and can be applied to, for example, a photoelectric transducing element, a memory and recording element or a gas sensor.

公开(公告)号：JPH01242584A

公开(公告)日：1989-09-27

申请号：JP7072288

申请日：1988-03-24

Applicant: IMAI YOSHIO ,  KAKIMOTO MASAAKI ,  MITSUBISHI CHEM IND

Inventor： IMAI YOSHIO ,  KAKIMOTO MASAAKI ,  NISHIKATA YASUNARI ,  MORIKAWA ATSUSHI

IPC: C07D487/22 ,  C08G73/10

Abstract: NEW MATERIAL:5,15-Di(4-aminophenyl)-diphenylporphyrin expressed by formula I or a porphyrin ring-containing diamine expressed by formula II. USE:A raw material for polyimides, polyamidimides, polyamides, etc., containing porphyrin. PREPARATION:For example, pyrrole is added dropwise into a solution containing p-nitrobenzaldehyde or m-nitrobenzaldehyde and benzaldehyde and refluxed to initially form a corresponding dinitro compound [example; 5,15-di(4- nitrophenyl) 10,20-diphenyl porphyrin]. Then the nitro group thereof is reduced with stannous chloride, etc.

公开(公告)号：JPS6320566B2

公开(公告)日：1988-04-28

申请号：JP9844978

申请日：1978-08-11

Applicant: IMAI YOSHIO

Inventor： IMAI YOSHIO

IPC: B01F7/02 ,  A23K1/00 ,  B01F7/00 ,  B01F15/00

公开(公告)号：JPS6385094A

公开(公告)日：1988-04-15

申请号：JP22623786

申请日：1986-09-26

Applicant: IMAI YOSHIO

Inventor： INUZUKA TADAO ,  SAWABE ATSUHITO ,  SUZUKI KAZUHIRO

IPC: H01L21/205 ,  C30B29/04

Abstract: PURPOSE:To readily obtain a diamond film at a low cost, by reacting a mixed gas of a hydrocarbon and hydrogen under a given pressure while discharging in a glow.arc transfer region and depositing the diamond film on a substrate provided on the anode. CONSTITUTION:The cathode 5 and anode 6 are placed in a vacuum reaction vessel 2 and a substrate for depositing diamond is placed on the anode 6. Air is excluded from an evacuation system 3 to keep the reaction vessel 1 in a vacuum and a mixed gas of a hydrocarbon gas, e.g. methane gas, and hydrogen gas is introduced from an inlet pipe 2 and kept under >=100Torr, preferably 100-1,000Torr pressure. A DC high voltage is applied from an electric power source 9 across the cathode 5 and anode 6 to react the mixed gas while discharging in a glow.arc transfer region. Thereby a diamond film is formed on the substrate provided on the anode 6. The resultant diamond film is useful for producing semiconductors, etc., related to electronics.

公开(公告)号：JPS53122865A

公开(公告)日：1978-10-26

申请号：JP3567477

申请日：1977-03-29

Applicant: IMAI YOSHIO

Inventor： IMAI YOSHIO

IPC: D03D27/00

公开(公告)号：JP2007270272A

公开(公告)日：2007-10-18

申请号：JP2006097697

申请日：2006-03-31

Applicant: Imai Yoshio ,  今井 淑夫

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO

IPC: C23C16/02 ,  C23C14/06 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

Abstract: PROBLEM TO BE SOLVED: To provide an epitaxial diamond film underlaying substrate and its manufacturing method in which a diamond of high quality having a large area of ≥1 inch (2.5 cm) in diameter on an iridium substrate can be subjected to the epitaxial growth by using the CVD method, and an epitaxial diamond film manufactured by the epitaxial diamond film underlaying substrate and its manufacturing method. SOLUTION: An iridium (Ir) film is deposited by the epitaxial growth by the vacuum vapor deposition method or the sputtering method on a substrate of a single crystal magnesium oxide (MgO) or a single crystal sapphire (α-Al 2 O 3 ). The bias nucleus generation of forming an epitaxial diamond nucleus is performed by exposing DC plasma containing ions to a surface of the film-deposited iridium (Ir) substrate. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种外延金刚石膜底层衬底及其制造方法，其中在铱衬底上具有直径≥1英寸（2.5cm）的大面积的高品质金刚石可以经受 通过使用CVD法的外延生长和由外延金刚石膜衬垫基板制造的外延金刚石膜及其制造方法。 解决方案：通过真空气相沉积法或溅射法将外延生长沉积在单晶氧化镁（MgO）或单晶蓝宝石（α-Al 2 0 3 ）。 通过将含有离子的等离子体等离子体暴露于膜沉积的铱（Ir）衬底的表面来进行形成外延金刚石核的偏置核生成。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2002337491A

公开(公告)日：2002-11-27

申请号：JP2001142988

申请日：2001-05-14

Applicant: IMAI YOSHIO

Inventor： ONOUCHI SAKYO ,  IMAI YOSHIO

IPC: B42F7/00

Abstract: PROBLEM TO BE SOLVED: To provide a filing implement which has self-supporting properties, durability, multi-functionality and safety required as the implement, a rigid structure in a simple constitution, which can be worked at a low cost and which is suitable for housing, storing and carrying various type sheets, cards, disc or the like susceptible to a fault due to an electromagnetic wave by using a file raw material having an electromagnetic wave shielding function and to provide a method for manufacturing the same. SOLUTION: The filing implement comprises a cover part 10 made in a rectangular shape of a predetermined dimension of one file raw material F, folding pieces 11a, 11b, 12a and 12b of a required shape extended from the peripheral sides of the cover part 10, and a backbone part 14 double-folded at a center of the part 10. In this implement, the pieces 11a, 11b, 12a and 12b are folded at insides and the part 14 is folded.