公开(公告)号：EP2009135A1

公开(公告)日：2008-12-31

申请号：EP07708033.1

申请日：2007-02-05

Applicant: Imai, Yoshio

Inventor： SAWABE, Atsuhito ,  MAEDA, Shintaro

IPC: C23C16/02 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

Abstract: The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al 2 O 3 ) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

Abstract translation: 本发明提供一种用于基础衬底上的外延金刚石薄膜能够外延生长高质量金刚石的大区域中，通过使用CVD法，制备方法，其直径为1英寸（2.5厘米）或更大，铱基体的一个 外延金刚石基础基板薄膜外延金刚石薄膜产生具有外延金刚石膜及其制造外延金刚石成膜的方法基础基板。 的铱（Ir）膜是通过外延生长形成在单晶氧化镁（MgO）基板或单晶蓝宝石（±的Al 2 O 3）通过真空沉积法或溅射法底物，和偏置 形成外延金刚石晶核的核生成处理是通过曝光直流等离子体以形成为膜的铱（Ir）基体的表面以含离子施加到所述铱形成为膜（Ir）的基体的表面。

公开(公告)号：EP0161829A2

公开(公告)日：1985-11-21

申请号：EP85302776.1

申请日：1985-04-19

Applicant: Imai, Yoshio

Inventor： Imai, Yoshio ,  Sawabe, Atsuhito ,  Inuzuka, Tadao

IPC: C30B25/02 ,  C30B29/04

CPC classification number: C23C16/278 ,  C23C16/271 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/905

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nucleuses are caused to form and grow to a thin film on a plate substrate (24), maintained at a temperature of in excess of 400°C, under electron bombardments in an atmosphere of a mixed gas of a hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

公开(公告)号：EP2009135B1

公开(公告)日：2016-05-18

申请号：EP07708033.1

申请日：2007-02-05

Applicant: Imai, Yoshio ,  Sawabe, Atsuhito

Inventor： SAWABE, Atsuhito ,  MAEDA, Shintaro ,  NOGUCHI, Hitoshi

IPC: C30B25/10 ,  C30B23/02 ,  H01L21/02 ,  C23C16/27 ,  C23C16/02 ,  H01J37/32 ,  H01J37/34 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

公开(公告)号：EP2009135A4

公开(公告)日：2010-12-29

申请号：EP07708033

申请日：2007-02-05

Applicant: IMAI YOSHIO

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO ,  NOGUCHI HITOSHI

IPC: C23C16/02 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

公开(公告)号：EP0161829A3

公开(公告)日：1986-12-30

申请号：EP85302776

申请日：1985-04-19

Applicant: IMAI, YOSHIO

Inventor： IMAI, YOSHIO ,  SAWABE, ATSUHITO ,  INUZUKA, TADAO

IPC: C30B25/00 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

CPC classification number: C23C16/278 ,  C23C16/271 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/905

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

公开(公告)号：EP0161829B1

公开(公告)日：1990-09-12

申请号：EP85302776.1

申请日：1985-04-19

Applicant: Imai, Yoshio

Inventor： Imai, Yoshio ,  Sawabe, Atsuhito ,  Inuzuka, Tadao

IPC: C30B25/02 ,  C30B29/04

CPC classification number: C23C16/278 ,  C23C16/271 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/905

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

公开(公告)号：DE3579621D1

公开(公告)日：1990-10-18

申请号：DE3579621

申请日：1985-04-19

Applicant: IMAI YOSHIO

Inventor： IMAI YOSHIO ,  SAWABE ATSUHITO ,  INUZUKA TADAO

IPC: C30B25/00 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nucleuses are caused to form and grow to a thin film on a plate substrate (24), maintained at a temperature of in excess of 400°C, under electron bombardments in an atmosphere of a mixed gas of a hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

公开(公告)号：DE3639380A1

公开(公告)日：1987-05-21

申请号：DE3639380

申请日：1986-11-18

Applicant: MITSUBISHI CHEM IND ,  IMAI YOSHIO ,  HINO TARO

Inventor： IMAI YOSHIO ,  HINO TARO ,  IWAMOTO MITSUMASA ,  KAKIMOTO MASAAKI ,  SUZUKI MASAAKI ,  KONISHI TORU

IPC: B01D69/12 ,  B01D71/64 ,  B05D1/20 ,  C01B3/50 ,  C08G73/10 ,  C08G73/14 ,  C08G73/16 ,  C08J5/18 ,  H01B3/30 ,  H01L21/312 ,  C08L79/08

Abstract: A film comprised of at least one monomolecular layer composed essentially of a polyimide having repeating units of the formula: wherein R1 is a tetravalent organic group and R2 is a bivalent organic group.

公开(公告)号：DE3152516A1

公开(公告)日：1982-12-02

申请号：DE3152516

申请日：1981-11-18

Applicant: MASUHARA HIDEKAZU ,  IMAI YOSHIO ,  KADOMA YOSHINORI ,  UEDA MITSURU

Inventor： MASUHARA EIICHI ,  IMAI YOSHIO ,  KADOMA YOSHINORI ,  UEDA MITSURU

IPC: A61C5/00 ,  C08F20/02

公开(公告)号：DE3639380C2

公开(公告)日：1999-05-27

申请号：DE3639380

申请日：1986-11-18

Applicant: MITSUBISHI CHEM CORP ,  IMAI YOSHIO ,  HINO TARO

Inventor： IMAI YOSHIO ,  HINO TARO ,  IWAMOTO MITSUMASA ,  KAKIMOTO MASAAKI ,  SUZUKI MASAAKI ,  KONISHI TORU

IPC: B01D69/12 ,  B01D71/64 ,  B05D1/20 ,  C01B3/50 ,  C08G73/10 ,  C08G73/14 ,  C08G73/16 ,  C08J5/18 ,  H01B3/30 ,  H01L21/312 ,  C08L79/08

Abstract: A film comprised of at least one monomolecular layer composed essentially of a polyimide having repeating units of the formula: wherein R1 is a tetravalent organic group and R2 is a bivalent organic group.