公开(公告)号：EP2009135A4

公开(公告)日：2010-12-29

申请号：EP07708033

申请日：2007-02-05

Applicant: IMAI YOSHIO

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO ,  NOGUCHI HITOSHI

IPC: C23C16/02 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

公开(公告)号：DE3579621D1

公开(公告)日：1990-10-18

申请号：DE3579621

申请日：1985-04-19

Applicant: IMAI YOSHIO

Inventor： IMAI YOSHIO ,  SAWABE ATSUHITO ,  INUZUKA TADAO

IPC: C30B25/00 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nucleuses are caused to form and grow to a thin film on a plate substrate (24), maintained at a temperature of in excess of 400°C, under electron bombardments in an atmosphere of a mixed gas of a hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

公开(公告)号：JP2007270272A

公开(公告)日：2007-10-18

申请号：JP2006097697

申请日：2006-03-31

Applicant: Imai Yoshio ,  今井 淑夫

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO

IPC: C23C16/02 ,  C23C14/06 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

Abstract: PROBLEM TO BE SOLVED: To provide an epitaxial diamond film underlaying substrate and its manufacturing method in which a diamond of high quality having a large area of ≥1 inch (2.5 cm) in diameter on an iridium substrate can be subjected to the epitaxial growth by using the CVD method, and an epitaxial diamond film manufactured by the epitaxial diamond film underlaying substrate and its manufacturing method. SOLUTION: An iridium (Ir) film is deposited by the epitaxial growth by the vacuum vapor deposition method or the sputtering method on a substrate of a single crystal magnesium oxide (MgO) or a single crystal sapphire (α-Al 2 O 3 ). The bias nucleus generation of forming an epitaxial diamond nucleus is performed by exposing DC plasma containing ions to a surface of the film-deposited iridium (Ir) substrate. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种外延金刚石膜底层衬底及其制造方法，其中在铱衬底上具有直径≥1英寸（2.5cm）的大面积的高品质金刚石可以经受 通过使用CVD法的外延生长和由外延金刚石膜衬垫基板制造的外延金刚石膜及其制造方法。 解决方案：通过真空气相沉积法或溅射法将外延生长沉积在单晶氧化镁（MgO）或单晶蓝宝石（α-Al 2 0 3 ）。 通过将含有离子的等离子体等离子体暴露于膜沉积的铱（Ir）衬底的表面来进行形成外延金刚石核的偏置核生成。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPS60221395A

公开(公告)日：1985-11-06

申请号：JP7750784

申请日：1984-04-19

Applicant: IMAI YOSHIO

Inventor： SAWABE ATSUHITO ,  INUZUKA TADAO ,  IMAI YOSHIO

IPC: C30B25/00 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

Abstract: PURPOSE:To manufacture the titled diamond thin film by impressing a DC voltage so that a substrate arranged in a high-vacuum vessel may be positively charged and a heating element which is brought close to and opposed to the substrate may be negatively charged, bringing the substrate and the element into contact with a mixed gas of hydrogen and hydrocarbon, and thermally cracking. CONSTITUTION:A substrate 24 and a heating element 28 which is brought close to and opposed to the substrate are provided in a vessel 10, and the inside of the vessel 10 is evacuated to about 10 Torr. The substrate 24 is kept at 800-900 deg.C by a heater 18, a DC voltage is impressed from an external electric power source to charge the substrate 24 positively and the heating element 28 negatively, and an electron shower is generated at 1-50mA/cm electron current density. Then when a mixed gas having 1/1-1/50 volume ratio of hydrocarbon to hydrogen is introduced from a conduit 30 into the vessel 10, a diamond thin film is formed on the substrate 24 by thermal cracking.

公开(公告)号：JPS61236113A

公开(公告)日：1986-10-21

申请号：JP7667585

申请日：1985-04-12

Applicant: IMAI YOSHIO

Inventor： INUZUKA TADAO ,  SAWABE ATSUHITO

IPC: H01L21/205 ,  H01L21/263

Abstract: PURPOSE:To form a boron-doped P-type diamond thin film on the upper surface of a substrate in high productivity by a method wherein a substrate, having the upper surface maintained at 400-800 deg.C, is supported in a vacuum chamber, the mixture gas of hydrogen and hydrocarbon is introduced into the vacuum chamber, and an electron beam is made to irradiate thereon. CONSTITUTION:A quartz glass substrate 12 is placed on a holder 14 located in a vacuum chamber 10. After the vacuum chamber 10 is evacuated to approximately 10 Torr through the intermediary of an exhaust port 16, the electron beam 22 of the acceleration voltage of 800V and the current density of 100mA/cm or below is made to irradiate on the surface of the substrate using the electron gun 20 provided in an electron gun chamber 18, and the surface of the substrate is maintained at approximately 600 deg.C using a heater 24. The mixed gas of the volumetric ratio of 1:20 of methane and hydrogen is introduced close to and in parallel with the upper surface of the substrate, and the internal pressure of the chamber is maintained at 10 Torr. On the other hand, an excess surface electron removing means is constituted with a capacitor 30 and a high frequency generator 32, it is connected to the holder 14, and the excessive electrons on the surface of the quartz glass substrate is removed by giving the high frequency of 1MHz. As a result, a diamond thin film of approximately 5mum is obtained on the surface of the substrate.

公开(公告)号：JPS6385094A

公开(公告)日：1988-04-15

申请号：JP22623786

申请日：1986-09-26

Applicant: IMAI YOSHIO

Inventor： INUZUKA TADAO ,  SAWABE ATSUHITO ,  SUZUKI KAZUHIRO

IPC: H01L21/205 ,  C30B29/04

Abstract: PURPOSE:To readily obtain a diamond film at a low cost, by reacting a mixed gas of a hydrocarbon and hydrogen under a given pressure while discharging in a glow.arc transfer region and depositing the diamond film on a substrate provided on the anode. CONSTITUTION:The cathode 5 and anode 6 are placed in a vacuum reaction vessel 2 and a substrate for depositing diamond is placed on the anode 6. Air is excluded from an evacuation system 3 to keep the reaction vessel 1 in a vacuum and a mixed gas of a hydrocarbon gas, e.g. methane gas, and hydrogen gas is introduced from an inlet pipe 2 and kept under >=100Torr, preferably 100-1,000Torr pressure. A DC high voltage is applied from an electric power source 9 across the cathode 5 and anode 6 to react the mixed gas while discharging in a glow.arc transfer region. Thereby a diamond film is formed on the substrate provided on the anode 6. The resultant diamond film is useful for producing semiconductors, etc., related to electronics.

公开(公告)号：JPH0556649B2

公开(公告)日：1993-08-20

申请号：JP7667585

申请日：1985-04-12

Applicant: IMAI YOSHIO

Inventor： INUZUKA TADAO ,  SAWABE ATSUHITO

IPC: H01L21/205 ,  H01L21/263