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    Relative and absolute pressure sensor combined on chip
    42.
    发明授权
    Relative and absolute pressure sensor combined on chip 有权

    公开(公告)号：US10031003B2

    公开(公告)日：2018-07-24

    申请号：US14956770

    申请日：2015-12-02

    Applicant: Melexis Technologies NV ,  X-FAB Semiconductor Foundries AG

    Inventor： Appolonius Jacobus Van Der Wiel ,  Uwe Schwarz ,  Rudi De Winter

    IPC: H01L21/00 ,  G01F1/34 ,  G01L9/00 ,  G01L15/00 ,  B81B7/04 ,  B81C1/00 ,  G01F15/14

    Abstract: A method for manufacturing a system in a wafer for measuring an absolute and a relative pressure includes etching a shallow and a deep cavity in the wafer. A top wafer is applied and the top wafer is thinned for forming a first respectively second membrane over the shallow respectively deep cavity, and for forming in the top wafer first respectively second bondpads at the first respectively second membrane resulting in a first respectively second sensor. Back grinding the wafer results in an opened deep cavity and a still closed shallow cavity. The first bondpads of the first sensor measure an absolute pressure and the second bondpads of the second sensor measure a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.

    INFRARED SENSOR FOR MEASURING AMBIENT AIR TEMPERATURE
    45.
    发明申请
    INFRARED SENSOR FOR MEASURING AMBIENT AIR TEMPERATURE 审中-公开

    公开(公告)号：US20180106681A1

    公开(公告)日：2018-04-19

    申请号：US15785779

    申请日：2017-10-17

    Applicant: Melexis Technologies NV

    Inventor： Luc BUYDENS

    IPC: G01J5/08 ,  G01J5/00 ,  G01J5/02

    Abstract: An electronic device for measuring an ambient temperature (Tair) of the environment of an electronic device is described. It comprises at least one integrated infrared sensor, a blinded window preventing infrared radiation to directly impinge on the integrated infrared sensor and being in thermal contact with the environment as well as with a cover of the device resulting in the blinded window being at a surface temperature (Tsurface). The at least one integrated infrared sensor is adapted for sensing the temperature of the blinded window (Tsurface). The device also comprises at least one absolute temperature sensor for measuring a temperature of the at least one infrared sensor (Tsensor) itself, and a processing means for determining a temperature difference (ΔT) between the sensed surface temperature (Tsurface) and the temperature of the infrared sensor (Tsensor) and for calculating based thereon the ambient temperature (Tair).

    PRESSURE SENSOR WITH BUILT IN STRESS BUFFER
    46.
    发明申请
    PRESSURE SENSOR WITH BUILT IN STRESS BUFFER 审中-公开
    压力传感器内置应力缓冲器

    公开(公告)号：US20170016790A1

    公开(公告)日：2017-01-19

    申请号：US15184139

    申请日：2016-06-16

    Applicant: Melexis Technologies NV

    Inventor： Appolonius Jacobus VAN DER WIEL

    IPC: G01L19/06 ,  G01L19/04 ,  G01L9/00

    CPC classification number: G01L19/0618 ,  G01L9/0048 ,  G01L9/0055 ,  G01L19/04 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: A semiconductor pressure sensor comprising: a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.

    Abstract translation: 一种半导体压力传感器，包括：半导体衬底，具有从衬底的顶表面延伸到底表面的通孔，所述通孔在所述衬底的内部和外部之间形成空间; 压力响应结构，布置在所述内部部分上; 许多柔性元件从所述内部部分延伸到所述外部部分，用于将所述内部部分悬置在所述通孔内; 所述通孔至少部分地填充有非弹性材料。 一种制造这种半导体压力传感器的方法。

    INFRARED THERMAL SENSOR WITH BEAM WITHOUT THERMOCOUPLE
    47.
    发明申请
    INFRARED THERMAL SENSOR WITH BEAM WITHOUT THERMOCOUPLE 有权
    红外热传感器，带有无热电偶的光束

    公开(公告)号：US20170003172A1

    公开(公告)日：2017-01-05

    申请号：US15107065

    申请日：2014-12-13

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Ben MAES ,  Carl VAN BUGGENHOUT ,  Appolonius Jacobus VAN DER WIEL

    IPC: G01J5/02 ,  G01J5/14

    CPC classification number: G01J5/023 ,  G01J5/0225 ,  G01J5/12 ,  G01J5/14 ,  G01J5/16 ,  G01J2005/123

    Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

    Abstract translation: 公开了一种用于感测红外辐射的红外热传感器。 红外热敏传感器包括一个基片和盖结构，一起形成一个密封的空腔，一个隔膜，布置在所述空腔中，用于通过窗口或孔口接收红外辐射（IR）和多个用于悬挂膜片的光束。 至少一个光束具有布置在其中或其上的热电偶，用于测量膜和基板之间的温度差（ΔT），多个光束。 此外，至少一个梁机械地支撑膜，而不存在其中或之上的热电偶。

    Phase current regulation in BLDC motors
    48.
    发明授权
    Phase current regulation in BLDC motors 有权
    BLDC电机的相电流调节

    公开(公告)号：US09479096B2

    公开(公告)日：2016-10-25

    申请号：US14531224

    申请日：2014-11-03

    Applicant: Melexis Technologies NV

    Inventor： Jan Heynlein ,  Thomas Freitag ,  Christian Paintz

    IPC: H02P1/00 ,  H02P6/18

    CPC classification number: H02P6/18 ,  H02P6/182

    Abstract: A method is provided for determining a phase current direction and a zero-crossing moment of the phase current in a sinusoidally controlled brushless direct current motor. The brushless direct current motor comprises a coil per phase and the phase of the brushless direct current motor is driven by a half bridge driver. The half bridge driver comprises a high side field effect transistor and a low side field effect transistor. The method comprising the following steps: measuring the drain source voltage over the high side field effect transistor and low side field effect transistor, and determining the zero crossing moment of the phase current by determining the current direction based on the measured drain source voltages and by determining the moment the current changes direction.

    Abstract translation: 提供一种用于确定正弦控制的无刷直流电动机中的相电流方向和相电流的零交叉力矩的方法。 无刷直流电动机每相包括线圈，无刷直流电动机的相位由半桥驱动器驱动。 半桥驱动器包括高边场效应晶体管和低边场效应晶体管。 该方法包括以下步骤：测量高侧场效应晶体管和低侧场效应晶体管上的漏极电压，并且通过基于测量的漏极源电压和通过测量的漏极源电压确定电流方向来确定相电流的过零点 确定当前改变方向的时刻。

    Method and electronic circuit for motor stall detection
    49.
    发明授权
    Method and electronic circuit for motor stall detection 有权
    电机失速检测方法及电路

    公开(公告)号：US09461571B2

    公开(公告)日：2016-10-04

    申请号：US14714426

    申请日：2015-05-18

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Marcel Jakobus Gerardus Braat ,  Marc Lambrechts

    IPC: H02H7/08 ,  H02P8/36 ,  H02P8/38 ,  H02P8/22

    CPC classification number: H02P8/38 ,  H02P8/22 ,  H02P8/36 ,  H02P29/0241

    Abstract: A method of detecting stall of a multi-phase motor operated in a micro-stepped mode, the method comprising: a) applying at least two phase-shifted micro-stepped waveforms to the phase windings of the motor; b) determining a sum of currents flowing through the phase windings, and taking samples of the sum of currents synchronously with the application of the micro-stepped waveforms; c) calculating a moving average or moving sum of the samples over one or more “full steps” of the phase-shifted waveforms; d) calculating an adaptive threshold based on the samples; e) detecting stall of the motor when the moving average is larger than the adaptive threshold. An electrical circuit and a computer program are arranged to perform the method.

    Abstract translation: 一种检测以微步进模式操作的多相电动机的失速的方法，所述方法包括：a）将至少两个相移的微步进波形施加到所述电动机的相绕组; b）确定流过相绕组的电流之和，并与微步波形的应用同步地获取电流之和; c）通过相移波形的一个或多个“全步”来计算样本的移动平均或移动和; d）基于样本计算自适应阈值; e）当移动平均值大于自适应阈值时，检测电机的失速。 布置电路和计算机程序来执行该方法。

    STATIC DATA BUS ADDRESS ALLOCATION
    50.
    发明申请
    STATIC DATA BUS ADDRESS ALLOCATION 审中-公开
    静态数据总线地址分配

    公开(公告)号：US20160261426A1

    公开(公告)日：2016-09-08

    申请号：US15061010

    申请日：2016-03-04

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Peter VANDERSTEEGEN

    IPC: H04L12/40 ,  G06F13/40 ,  G06F13/42

    CPC classification number: H04L12/40039 ,  G06F13/404 ,  G06F13/4282 ,  H04L12/40006 ,  H04L12/40195 ,  H04L61/2038 ,  H04L61/6027

    Abstract: The present invention relates to a data bus node integrated circuit comprising at least one static address selection terminal and a detecting circuit for detecting a state of the address selection terminal. The IC also comprises a communication circuit for data communication over a data bus. This circuit is adapted for determining a node address identifier taking the detected state of the at least one static address selection terminal into account. The detecting circuit is adapted for detecting the state of the address selection terminal by determining whether the address selection terminal is in a floating state, a power supply voltage state or a ground voltage state.

    Abstract translation: 数据总线节点集成电路技术领域本发明涉及一种包括至少一个静态地址选择终端和用于检测地址选择终端的状态的检测电路的数据总线节点集成电路。 IC还包括用于通过数据总线进行数据通信的通信电路。 该电路适用于考虑至少一个静态地址选择终端的检测状态来确定节点地址标识符。 检测电路适于通过确定地址选择端是处于浮置状态，电源电压状态还是接地电压状态来检测地址选择端的状态。

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