公开(公告)号：US20230173613A1

公开(公告)日：2023-06-08

申请号：US18062706

申请日：2022-12-07

Applicant: Melexis Technologies NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: B23K26/364 ,  B23K26/40 ,  B23K26/38

CPC classification number: B23K26/364 ,  B23K26/40 ,  B23K26/38 ,  B23K2103/172

Abstract: A method for creating an electrical contact between semiconductor layers which are separated by an isolating connection layer. The method comprising: providing a layered stack comprising at least a first semiconductor layer, an isolating connection layer, and a second semiconductor layer, wherein the isolating connection layer is between first semiconductor layer and the second semiconductor layer; laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer; cutting the remainder of the second semiconductor layer.

公开(公告)号：US20200075466A1

公开(公告)日：2020-03-05

申请号：US16557224

申请日：2019-08-30

Applicant: Melexis Technologies NV

Inventor： Jian CHEN ,  Appolonius Jacobus VAN DER WIEL ,  Laurent OTTE

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/13 ,  G01L9/00 ,  G01L19/00

Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

公开(公告)号：US20200231432A1

公开(公告)日：2020-07-23

申请号：US16744593

申请日：2020-01-16

Applicant: Melexis Technologies NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: B81B7/00 ,  B81C1/00 ,  G01L9/00

Abstract: A method of manufacturing a sensor device comprising: configuring a moulding support structure and a packaging mould so as to provide predetermined pathways to accommodate a moulding compound, the moulding support structure defining a first notional volume adjacent a second notional volume. An elongate sensor element and the moulding support structure are configured so that the moulding support structure fixedly carries the elongate sensor element and the elongate sensor element resides substantially in the first notional volume and extends towards the second notional volume, the elongate sensor element having an electrical contact electrically coupled to another electrical contact disposed within the second notional volume. The moulding support structure carrying (102) the elongate sensor element is disposed within the packaging mould (106). The moulding compound is then introduced (110) into the packaging mould during a predetermined period of time (112) so that the moulding compound fills the predetermined pathways, thereby filling the second notional volume and surrounding the elongate sensor element within the second notional volume without contacting the elongate sensor element.

公开(公告)号：US20180218984A1

公开(公告)日：2018-08-02

申请号：US15882073

申请日：2018-01-29

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: H01L23/552 ,  H01L29/84 ,  H01L29/45 ,  H01L29/06 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00 ,  H01L21/768

Abstract: A sensor device for use in harsh media, comprising a silicon die comprises a lowly doped region, and a contact layer, contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact to the silicon die via a silicide of the refractory metal. A noble metal layer is provided over the contact layer such that the contact layer is completely covered by the noble metal layer. The noble metal layer comprises palladium, platinum or a metal alloy of palladium and/or platinum. The noble metal layer is patterned to form an interconnect structure and a contact connecting via the contact layer to the ohmic contact. The noble metal layer is adapted for providing a shield to prevent modulation of the lowly doped region by surface charges. The noble metal layer may advantageously protect the contact layer against harsh media in an external environment of the sensor device.

公开(公告)号：US20170247250A1

公开(公告)日：2017-08-31

申请号：US15445096

申请日：2017-02-28

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： Laurent OTTE ,  Jian CHEN ,  Appolonius Jacobus VAN DER WIEL

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0058 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/098 ,  B81B2207/115 ,  B81C1/0023 ,  B81C2203/0792 ,  G01L9/0054 ,  G01L19/0645 ,  G01L19/147 ,  G01L23/24 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

Abstract: A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

公开(公告)号：US20160153815A1

公开(公告)日：2016-06-02

申请号：US14956770

申请日：2015-12-02

Applicant: X-FAB Semiconductor Foundries AG ,  Melexis Technologies NV

Inventor： Appolonius Jacobus VAN DER WIEL ,  Uwe SCHWARZ ,  Rudi DE WINTER

IPC: G01F1/34 ,  B81B7/04 ,  G01F15/14 ,  B81C1/00

CPC classification number: G01F1/34 ,  B81B7/04 ,  B81B2201/0264 ,  B81C1/00214 ,  G01F15/14 ,  G01L9/008 ,  G01L15/00

Abstract: A method for manufacturing a system in a wafer for measuring an absolute and a relative pressure includes etching a shallow and a deep cavity in the wafer. A top wafer is applied and the top wafer is thinned for forming a first respectively second membrane over the shallow respectively deep cavity, and for forming in the top wafer first respectively second bondpads at the first respectively second membrane resulting in a first respectively second sensor. Back grinding the wafer results in an opened deep cavity and a still closed shallow cavity. The first bondpads of the first sensor measure an absolute pressure and the second bondpads of the second sensor measure a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.

Abstract translation: 用于制造用于测量绝对压力和相对压力的晶片中的系统的方法包括蚀刻晶片中的浅层和深空腔。 施加顶部晶片并且顶部晶片被薄化以在浅的分别的深空腔上形成第一分别为第二膜，并且在顶部晶片中首先分别在第一分开的第二膜处分别形成第二粘合垫，从而产生第一分别为第二传感器。 背面研磨晶圆导致开放的深腔和仍然闭合的浅腔。 第一传感器的第一粘合垫测量绝对压力，并且第二传感器的第二粘合垫测量相对压力。 在第一步骤中的蚀刻分别限定由浅层和深腔形成的传感器中的第一膜和第二膜的边缘。

公开(公告)号：US20130285167A1

公开(公告)日：2013-10-31

申请号：US13870209

申请日：2013-04-25

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： Laurent OTTE ,  Appolonius Jacobus VAN DER WIEL

IPC: H01L29/84

CPC classification number: H01L29/84 ,  B81B2201/0264 ,  B81C1/00158 ,  G01L19/0069 ,  G01L19/0092 ,  G01L19/04 ,  G01L19/0627 ,  G01L19/141 ,  G01L19/143 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A pressure sensor system comprising a pressure sensor chip is disclosed. The pressure sensor chip comprises a sensing side where pressure sensing is performed and one or more interconnections where electrical connections are made at the other side of the chip. The pressure sensor comprising an integrated circuit (1) forming a substrate, the substrate comprising a membrane shaped portion adapted for being exposed to the pressure, the integrated circuit (1) comprising both pressure signal sensing components and pressure signal processing components.

Abstract translation: 公开了一种包括压力传感器芯片的压力传感器系统。 压力传感器芯片包括执行压力感测的感测侧和在芯片的另一侧进行电连接的一个或多个互连。 所述压力传感器包括形成衬底的集成电路（1），所述衬底包括适于暴露于所述压力的膜状部分，所述集成电路（1）包括压力信号感测部件和压力信号处理部件。

公开(公告)号：US20190385923A1

公开(公告)日：2019-12-19

申请号：US16441743

申请日：2019-06-14

Applicant: Melexis Technologies NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: H01L23/31 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00 ,  H01L23/29 ,  H01L23/532 ,  H01L21/768 ,  H01L29/40 ,  H01L29/84 ,  H01L21/02 ,  H01L37/02

Abstract: A semiconductor device comprises a first doped semiconductor layer, a second doped semiconductor layer, an oxide layer covering the first doped semiconductor layer and the second doped semiconductor layer, and an interconnect. The first doped semiconductor layer is electrically connected with the second doped semiconductor layer by means of the interconnect which crosses over a sidewall of the second doped semiconductor layer. The interconnect comprises a metal filled slit in the oxide layer. At least one electronic component is formed in the first and/or second semiconductor layer. The semiconductor device moreover comprises a passivation layer which covers the first and second doped semiconductor layers and the oxide layer.

公开(公告)号：US20170016790A1

公开(公告)日：2017-01-19

申请号：US15184139

申请日：2016-06-16

Applicant: Melexis Technologies NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: G01L19/06 ,  G01L19/04 ,  G01L9/00

CPC classification number: G01L19/0618 ,  G01L9/0048 ,  G01L9/0055 ,  G01L19/04 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A semiconductor pressure sensor comprising: a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.

Abstract translation: 一种半导体压力传感器，包括：半导体衬底，具有从衬底的顶表面延伸到底表面的通孔，所述通孔在所述衬底的内部和外部之间形成空间; 压力响应结构，布置在所述内部部分上; 许多柔性元件从所述内部部分延伸到所述外部部分，用于将所述内部部分悬置在所述通孔内; 所述通孔至少部分地填充有非弹性材料。 一种制造这种半导体压力传感器的方法。

公开(公告)号：US20170003172A1

公开(公告)日：2017-01-05

申请号：US15107065

申请日：2014-12-13

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： Ben MAES ,  Carl VAN BUGGENHOUT ,  Appolonius Jacobus VAN DER WIEL

IPC: G01J5/02 ,  G01J5/14

CPC classification number: G01J5/023 ,  G01J5/0225 ,  G01J5/12 ,  G01J5/14 ,  G01J5/16 ,  G01J2005/123

Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

Abstract translation: 公开了一种用于感测红外辐射的红外热传感器。 红外热敏传感器包括一个基片和盖结构，一起形成一个密封的空腔，一个隔膜，布置在所述空腔中，用于通过窗口或孔口接收红外辐射（IR）和多个用于悬挂膜片的光束。 至少一个光束具有布置在其中或其上的热电偶，用于测量膜和基板之间的温度差（ΔT），多个光束。 此外，至少一个梁机械地支撑膜，而不存在其中或之上的热电偶。