Abstract:
A multi-band radio module for selectively supplying received signals in a plurality of frequency bands to a low noise amplifier via an input impedance matching circuit by switching over the operation mode of the low noise amplifier is comprised of : a pre-stage amplification unit including a plurality of fundamental amplifiers connected to one another in parallel, the fundamental amplifiers sharing a load impedance connected to a source voltage and a grounded degeneration impedance and having input signal lines commonly connected to an input impedance matching circuit; a post-stage amplifier to which the output signals of the plurality of fundamental amplifiers are commonly inputted; and a bias control unit for selectively turning on the fundamental amplifiers, wherein the input impedance of the low noise amplifier is selectively optimized for the matching circuit depending on the RF band to be received.
Abstract:
A method of cleaning in a CVD device capable of efficiently removing by-products such as SiO2 and Si3N4 attached to and deposited on the inner wall of a reaction chamber and the surfaces of an electrode when forming films, being very low in cleaning gas exhaust amount, affecting very little environments such as global warming, and contributing to cost reduction. After films are formed on a substrate by a CVD device, a fluorine-containing compound-containing fluorine-based cleaning gas is turned into plasma by a remote plasma generator , the plasma-based cleaning gas is introduced into a reaction chamber, and by-products deposited on the inside of the reaction chamber are removed.
Abstract:
An adapter for a memory card having a frame metal fitting to which an end portion of the card is inserted, whereby the card is detachably fitted, and a resin-molded body core assembled in the frame metal fitting by insertion, wherein an entire thickness of the adapter being approx. the same as that of the card, the frame metal fitting having a pair of holding portions in an approx. ⊐ shape in both end portions on the side of the card attached to hold both sides of the card, a hook portion between a pair of the holding portions being detachably engaged with the end portion of the card by spring force to prevent the card from coming off, a caulking projection fixing the core by caulking to the core, and an insulative coating film formed on the outer surface of the frame metal fitting.
Abstract:
A semiconductor integrated circuit has over one semiconductor substrate a nonvolatile memory and a logic circuit which uses information stored in the nonvolatile memory to perform logical operation. The nonvolatile memory comprises bit lines (bl and blb), word lines (wl_n), and memory cells (20). The memory cell comprises MOS transistors (M1 and M2) whose gate electrodes are connected with a word line. Information storage is carried out according to whether one source/drain electrode of the MOS transistors is connected with a source line (cs) or floated. During the other periods than a predetermined period in the operation of accessing the memory cell, the potential difference between the source/drain electrodes of the MOS transistors constituting the memory cell is zeroed. Therefore, subthreshold leakage current is prevented from being passed through the memory cell on standby. During the predetermined period in accessing operation, a potential difference is produced between the source/drain electrodes of the MOS transistors. Therefore, the bit line potential can be varied by word line selection.
Abstract:
A communication semiconductor integrated circuit device (200) includes an amplifier circuit (330) including a plurality of variable-gain amplifiers (PGA1-PGA3) for amplifying a received signal and a plurality of filter circuits (LPF1-LPF3), the amplifiers and the filter circuits being connected to each other in a multi-stage configuration, and a last amplifier (FFGA) having a gain set regardless of a level of a received signal and a filter circuit, the last amplifier and the filter circuit are disposed at the last stage of the amplifier circuit. The amplifier circuit has an amplification factor variable according to a level of a received signal. The communication semiconductor integrated circuit device further includes a plurality of offset correction circuits (OFC1-0FC4) for correcting direct-current offset.corresponding to the variable-gain amplifiers and the last amplifiers. respectively.The offset correction circuit (OFC4) corresponding to the last amplifierconducts an offset correction at a timing different from timing for the other offset correction circuits (OFCl-OFC3).
Abstract:
A semiconductor integrated circuit capable of protection from card hacking, by which erroneous actions are actively induced by irradiation with light and protected secret information is illegitimately acquired, is to be provided. Photodetectors, configured by a standard logic process, hardly distinguishable from other circuits and consumes very little standby power, are mounted on a semiconductor integrated circuit, such as an IC card microcomputer. Each of the photodetectors, for instance, has a configuration in which a first state is held in a static latch by its initializing action and reversal to a second state takes place when semiconductor elements in a state of non-conduction, constituting the static latch of the first state, is irradiated with light. A plurality of photodetectors are arranged in a memory cell array. By incorporating the static latch type photodetector into the memory array, they can be arranged inconspicuously. Reverse engineering by irradiation with light can be effectively prevented.
Abstract:
A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit line electrode (16) connected to a bit line, and a control gate electrode (18) connected to a control gate control line. The first transistor section has a source line electrode (10) connected to a source line, a memory gate electrode (14) connected to a memory gate control line, and a charge storage region (11) disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc
Abstract:
A method for manufacturing a semiconductor device is disclosed which enables to eliminate impurities in a gate insulating film as much as possible which impurities deteriorate the film properties of the gate insulating film. In this method, a step for forming an insulating film with a thickness of 0.3-2 nm and a step for removing impurities in the insulating film are repeated a plurality of times, thereby forming an insulating film having a certain thickness.
Abstract:
A memory card is used by selecting a plurality of interfaces. The memory card (100) is provided with a storage section (22) embedded in a holder (20); a controller (24) embedded in the holder; a plurality of first contacts (2-10) connected to the controller; a switching signal generating section (26) embedded in the holder; and two second contacts (11, 12) connected to the switching signal generating section. The switching signal generating section supplies an interface section (2402) with a switching signal (S1) corresponding to interface selection signals (D1, D2) fed through the second contact. Based on the interface selection signal (S1) fed through the second contact, one interface is selected from two types of interfaces and data communication is performed.
Abstract:
The RF power amplifier apparatus has an RF power amplifier (RFPA) and a power-supply circuit (Pwr_Cnt). The power-supply circuit controls the level of a source voltage (V LDO ) supplied to the RF power amplifier in response to the level of a power-control signal (Vapc). A sensing resistance (Rsen) produces a sense signal (Vsen) corresponding to a source current (I LDO ) with respect to a source voltage. A current-control unit (Cmp1,Cmp2,FF1,NAND3 and Qp4) controls the source current (I LDO ) in response to the sense signal (Vsen). When Vsen coincides with an allowable sense signal level (Vsh) corresponding to a source current allowable level I LDO (Max), the current-control unit controls the source current (I LDO ) to a limit current smaller than the allowable level I LDO (Max). Preferably, the limit current is a shutdown current when a shutdown switch is in OFF state. Thus, the drain of the battery of a mobile-phone terminal can be reduced even when an impedance mismatch condition lasts for a long time.