가변 저항체, 이를 이용한 비휘발성 메모리 장치 및 이들의 제조 방법
    42.
    发明公开
    가변 저항체, 이를 이용한 비휘발성 메모리 장치 및 이들의 제조 방법 审中-实审
    可变电阻器,使用其的非易失性存储器件及其制造方法

    公开(公告)号:KR1020130060089A

    公开(公告)日:2013-06-07

    申请号:KR1020110126388

    申请日:2011-11-29

    Abstract: PURPOSE: A variable resistor, a nonvolatile memory device using the same, and a method for fabricating the same are provided to secure reproducibility and reliability by forming a uniform layer on the entire structure. CONSTITUTION: A variable resistor(Rw2) includes an anode electrode(TE) laminated on a substrate(10), a cathode electrode(BE), and a solid electrolyte interface layer(SE). The solid electrolyte interface layer includes a thin film made of CdS nanoscale particles. The anode electrode or the cathode electrode is a transparent electrode. The anode electrode includes a metal ion supply layer(IP) touching the solid electrolyte interface layer. The metal ion supply layer includes the source of ions(MI) forming a conductive bridge(CB) in the solid electrolyte interface layer.

    Abstract translation: 目的:提供可变电阻器,使用该可变电阻器的非易失性存储器件及其制造方法,以通过在整个结构上形成均匀的层来确保再现性和可靠性。 构成:可变电阻器(Rw2)包括层叠在基板(10),阴极电极(BE)和固体电解质界面层(SE)上的阳极电极(TE)。 固体电解质界面层包括由CdS纳米级颗粒制成的薄膜。 阳极电极或阴极是透明电极。 阳极包括接触固体电解质界面层的金属离子供给层(IP)。 金属离子供给层包括在固体电解质界面层中形成导电桥(CB)的离子源(MI)。

    자성 특성과 발광 특성을 동시에 갖는 나노복합체 및 그 제조 방법
    43.
    发明公开
    자성 특성과 발광 특성을 동시에 갖는 나노복합체 및 그 제조 방법 有权
    磁性荧光纳米复合材料和纳米复合材料的合成

    公开(公告)号:KR1020120085362A

    公开(公告)日:2012-08-01

    申请号:KR1020110006624

    申请日:2011-01-24

    Inventor: 김웅 정진후

    CPC classification number: C09K11/883 B82Y5/00 B82Y15/00 C09K11/025 C09K11/565

    Abstract: PURPOSE: A nanocomposite with simultaneous magnetic and fluorescent properties and a manufacturing method thereof is provided to display high luminous efficiency even in an aqueous solution and have high magnetic properties. CONSTITUTION: A nanocomposite comprises an S-H combined cadmium selenide/zinc sulfide core-shell quantum dot and an iron oxide colloidal nanocluster. A ratio of cadmium to selenium to zinc sulfide in the cadmium selenide/zinc sulfide core-shell quantum dot is 0.1:0.2:4:3. A coupling ratio of the cadmium selenide/zinc sulfide core-shell quantum dot to the iron oxide colloidal nanocluster is between 1:20 and 1:40, by weight. A manufacturing method of the nanocomposite comprises the following steps: coupling the iron oxide(Fe3O4) colloidal nanocluster coated with poly(acrylic acid)(PAA) with N-3-dimethylaminopropyl-N'-ethylcarbodiimide hydrochloride(EDC)/N-hydroxysulfosuccinimide sodium salt(Sulfo-NHS); replacing the surface with thiol groups by adding cysteamine; dispersing the iron oxide colloidal nanocluster of which the surface is substituted with thiol groups in a solution; adding the cadmium selenide/zinc sulfide (CdSe/ZnS) nanoparticle solution; and forming the nanocluster by using a magnet while stirring and washing the solution.

    Abstract translation: 目的:提供具有同时的磁性和荧光性质的纳米复合材料及其制造方法,即使在水溶液中也能显示出高的发光效率并且具有高磁性。 构成:纳米复合材料包括S-H组合的硒化镉/硫化锌核壳量子点和氧化铁胶体纳米团簇。 硒化镉/硫化锌核壳量子点中镉与硒与硫化锌的比例为0.1:0.2:4:3。 硒化镉/硫化锌核壳量子点与氧化铁胶体纳米团簇的重量比为1:20〜1:40。 纳米复合材料的制造方法包括以下步骤:将涂覆有聚(丙烯酸)(PAA)的氧化铁(Fe 3 O 4)胶体纳米团与N-3-二甲基氨基丙基-N'-乙基碳二亚胺盐酸盐(EDC)/ N-羟基磺基琥珀酰亚胺钠 盐(磺基-NHS); 通过加入半胱胺用硫醇基代替表面; 将表面被巯基取代的氧化铁胶体纳米团簇分散在溶液中; 加入硒化镉/硫化锌(CdSe / ZnS)纳米颗粒溶液; 并在搅拌和洗涤溶液的同时使用磁体形成纳米团簇。

    염화은 기반 나노큐브 및 나노응집체의 제조 방법
    44.
    发明公开
    염화은 기반 나노큐브 및 나노응집체의 제조 방법 有权
    基于AGCL的纳米银和纳米颗粒聚集体的制备

    公开(公告)号:KR1020120035245A

    公开(公告)日:2012-04-16

    申请号:KR1020100096601

    申请日:2010-10-05

    Inventor: 김웅 김승욱

    Abstract: PURPOSE: A manufacturing method of nano-aggregate and silver chloride based nano-cube are provided to control morphology, size, and composition of the AgCl nano aggregate by adjusting molar ratio of AgNO3 and HCl. CONSTITUTION: A silver chloride(AgCl) nano-aggregate is manufactured by reacting silver nitrate(AgNO3) with hydrochloric acid(HCl). The morphology and structure of the silver chloride(AgCl) nano aggregate are changed in accordance with reaction molar ratio of the silver nitrate and hydrochloric acid. If the reaction molar ratio of the hydrochloric acid to silver nitrate is 1:2-1:30, silver chloride(AgCl) nano cube will be formed. If the reaction molar ratio of the silver nitrate to hydrochloric acid is 1:1-1:0.06, silver chloride(AgCl) nano particle aggregate containing silver (Ag) nano particle will be formed. If reaction molar ratio of the silver nitrate to hydrochloric acid is 1:0.05-1:0.01, silver (Ag) nanowire will be formed. A manufacturing method of the silver chloride nano aggregate additionally includes a step of reducing the AgCl aggregate using a reducing agent after AgCl aggregate formation.

    Abstract translation: 目的:提供纳米骨料和氯化银基纳米立方体的制备方法,通过调整AgNO3和HCl的摩尔比来控制AgCl纳米骨料的形貌,大小和组成。 构成:通过使硝酸银(AgNO 3)与盐酸(HCl)反应制造氯化银(AgCl)纳米骨料。 氯化银(AgCl)纳米骨料的形态和结构根据硝酸银和盐酸的反应摩尔比而变化。 如果盐酸与硝酸银的反应摩尔比为1:2-1:30,则将形成氯化银(AgCl)纳米立方体。 如果硝酸银与盐酸的反应摩尔比为1:1〜0.06,则将形成含有银(Ag)纳米粒子的氯化银(AgCl)纳米粒子聚集体。 如果硝酸银与盐酸的反应摩尔比为1:0.05-1:0.01,则形成银(Ag)纳米线。 另外,氯化银纳米骨料的制造方法还包括在AgCl集合体形成后使用还原剂还原AgCl骨料的工序。

    이산화망간/탄소나노튜브/종이를 기반으로 하는 수퍼캐패시터 전극 및 그 제조 방법
    45.
    发明公开
    이산화망간/탄소나노튜브/종이를 기반으로 하는 수퍼캐패시터 전극 및 그 제조 방법 有权
    基于MNO2 / CNT / PAPER的超级电容器电极和电极合成

    公开(公告)号:KR1020120032286A

    公开(公告)日:2012-04-05

    申请号:KR1020100093859

    申请日:2010-09-28

    CPC classification number: Y02E60/13 H01G11/86 H01G11/36

    Abstract: PURPOSE: A super capacitor electrode based on manganese dioxide/carbon nano tube/paper and a manufacturing method thereof are provided to deposit manganese dioxide on the paper coated with the carbon nano tube through an electrochemical method. CONSTITUTION: A carbon nano tube and a surfactant are dispersed in solvents. Ink of the carbon nano tube is obtained. A paper member is coated with the ink of the carbon nano tube. A carbon nano tube/paper electrode is obtained. Manganese dioxide is attached to the carbon nano tube/paper electrode.

    Abstract translation: 目的:提供一种基于二氧化锰/碳纳米管/纸的超级电容器电极及其制造方法,通过电化学方法在涂覆有碳纳米管的纸上沉积二氧化锰。 构成:将碳纳米管和表面活性剂分散在溶剂中。 得到碳纳米管的油墨。 用碳纳米管的油墨涂覆纸构件。 得到碳纳米管/纸电极。 二氧化锰附着在碳纳米管/纸电极上。

    가요성 투명 박막 트랜지스터
    46.
    发明公开
    가요성 투명 박막 트랜지스터 失效
    碳纳米管薄膜晶体管

    公开(公告)号:KR1020090121677A

    公开(公告)日:2009-11-26

    申请号:KR1020080047693

    申请日:2008-05-22

    Abstract: PURPOSE: A carbon nano tube thin film transistor is provided to increase an aperture ratio of a pixel by allowing all conductive materials and a semiconductor material to include CNT and having a flexible structure while being transparent. CONSTITUTION: A CNT thin film transistor comprises a channel layer, a source / drain electrode, a gate layer, a gate isolation layer, and a transparency flexible substrate. The channel layer by the semiconductor CNT forms an electrical path associated with the transparent organic material and the organic material. The source / drain electrodes(21, 22) is connected with both side of the channel electrically by the conductivity CNT. The source / drain electrode by the conductivity CNT forms an electrical path associated with the organic material and the transparency organic material. A gate layer by the conductivity CNT corresponds to the channel layer, and a gate layer by the conductivity CNT is connected with both sides of the channel electrically.

    Abstract translation: 目的:提供一种碳纳米管薄膜晶体管,通过允许所有导电材料和半导体材料包括CNT并且具有柔性结构同时透明化以增加像素的孔径比。 构成:CNT薄膜晶体管包括沟道层,源极/漏极,栅极层,栅极隔离层和透明柔性基板。 由半导体CNT形成的沟道层形成与透明有机材料和有机材料相关联的电路径。 源极/漏极(21,22)通过导电性CNT电连接于沟道的两侧。 源极/漏极通过导电CNT形成与有机材料和透明有机材料相关联的电路径。 通过导电性CNT的栅极层对应于沟道层,并且通过导电性CNT的栅极层与沟道的两侧电连接。

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