Abstract:
본 발명은 카드뮴셀레나이드/황화아연 코어쉘 양자점과 산화철 콜로이달 나노클러스터가 결합되어 자성 특성과 발광 특성을 동시에 갖는 나노복합체 및 그 제조방법에 관한 것으로서, 높은 자성과 수용액에서도 높은 발광효율을 나타내어 FACS와 MACS를 동시에 이용한 세포분리에 적용할 수 있다.
Abstract:
PURPOSE: A variable resistor, a nonvolatile memory device using the same, and a method for fabricating the same are provided to secure reproducibility and reliability by forming a uniform layer on the entire structure. CONSTITUTION: A variable resistor(Rw2) includes an anode electrode(TE) laminated on a substrate(10), a cathode electrode(BE), and a solid electrolyte interface layer(SE). The solid electrolyte interface layer includes a thin film made of CdS nanoscale particles. The anode electrode or the cathode electrode is a transparent electrode. The anode electrode includes a metal ion supply layer(IP) touching the solid electrolyte interface layer. The metal ion supply layer includes the source of ions(MI) forming a conductive bridge(CB) in the solid electrolyte interface layer.
Abstract:
PURPOSE: A nanocomposite with simultaneous magnetic and fluorescent properties and a manufacturing method thereof is provided to display high luminous efficiency even in an aqueous solution and have high magnetic properties. CONSTITUTION: A nanocomposite comprises an S-H combined cadmium selenide/zinc sulfide core-shell quantum dot and an iron oxide colloidal nanocluster. A ratio of cadmium to selenium to zinc sulfide in the cadmium selenide/zinc sulfide core-shell quantum dot is 0.1:0.2:4:3. A coupling ratio of the cadmium selenide/zinc sulfide core-shell quantum dot to the iron oxide colloidal nanocluster is between 1:20 and 1:40, by weight. A manufacturing method of the nanocomposite comprises the following steps: coupling the iron oxide(Fe3O4) colloidal nanocluster coated with poly(acrylic acid)(PAA) with N-3-dimethylaminopropyl-N'-ethylcarbodiimide hydrochloride(EDC)/N-hydroxysulfosuccinimide sodium salt(Sulfo-NHS); replacing the surface with thiol groups by adding cysteamine; dispersing the iron oxide colloidal nanocluster of which the surface is substituted with thiol groups in a solution; adding the cadmium selenide/zinc sulfide (CdSe/ZnS) nanoparticle solution; and forming the nanocluster by using a magnet while stirring and washing the solution.
Abstract:
PURPOSE: A manufacturing method of nano-aggregate and silver chloride based nano-cube are provided to control morphology, size, and composition of the AgCl nano aggregate by adjusting molar ratio of AgNO3 and HCl. CONSTITUTION: A silver chloride(AgCl) nano-aggregate is manufactured by reacting silver nitrate(AgNO3) with hydrochloric acid(HCl). The morphology and structure of the silver chloride(AgCl) nano aggregate are changed in accordance with reaction molar ratio of the silver nitrate and hydrochloric acid. If the reaction molar ratio of the hydrochloric acid to silver nitrate is 1:2-1:30, silver chloride(AgCl) nano cube will be formed. If the reaction molar ratio of the silver nitrate to hydrochloric acid is 1:1-1:0.06, silver chloride(AgCl) nano particle aggregate containing silver (Ag) nano particle will be formed. If reaction molar ratio of the silver nitrate to hydrochloric acid is 1:0.05-1:0.01, silver (Ag) nanowire will be formed. A manufacturing method of the silver chloride nano aggregate additionally includes a step of reducing the AgCl aggregate using a reducing agent after AgCl aggregate formation.
Abstract:
PURPOSE: A super capacitor electrode based on manganese dioxide/carbon nano tube/paper and a manufacturing method thereof are provided to deposit manganese dioxide on the paper coated with the carbon nano tube through an electrochemical method. CONSTITUTION: A carbon nano tube and a surfactant are dispersed in solvents. Ink of the carbon nano tube is obtained. A paper member is coated with the ink of the carbon nano tube. A carbon nano tube/paper electrode is obtained. Manganese dioxide is attached to the carbon nano tube/paper electrode.
Abstract:
PURPOSE: A carbon nano tube thin film transistor is provided to increase an aperture ratio of a pixel by allowing all conductive materials and a semiconductor material to include CNT and having a flexible structure while being transparent. CONSTITUTION: A CNT thin film transistor comprises a channel layer, a source / drain electrode, a gate layer, a gate isolation layer, and a transparency flexible substrate. The channel layer by the semiconductor CNT forms an electrical path associated with the transparent organic material and the organic material. The source / drain electrodes(21, 22) is connected with both side of the channel electrically by the conductivity CNT. The source / drain electrode by the conductivity CNT forms an electrical path associated with the organic material and the transparency organic material. A gate layer by the conductivity CNT corresponds to the channel layer, and a gate layer by the conductivity CNT is connected with both sides of the channel electrically.