公开(公告)号：KR1020100102380A

公开(公告)日：2010-09-24

申请号：KR1020090020726

申请日：2009-03-11

Applicant: 삼성모바일디스플레이주식회사

Inventor： 신대범 ,  서민철 ,  한동원 ,  이동규 ,  곽진호 ,  강동훈 ,  김효진

IPC: H05B33/04 ,  H05B33/22 ,  H01L51/50

CPC classification number: H01L51/5253 ,  G02B5/201 ,  H01L27/322 ,  H01L51/5284 ,  H01L21/56 ,  H01L33/52

Abstract: PURPOSE: An organic light emitting display device is provided to prevent damage to a color filter layer by interposing a protection layer between a color filter layer and a black matrix when the black matrix is patterned. CONSTITUTION: A display unit(120) is formed on a substrate and includes an organic light emitting device. An encapsulation layer(130) is formed on the display unit to encapsulate the display unit. A color filter layer(140) is formed on the encapsulating layer. A protection layer(150) is formed on the color filter layer. The protection layer includes an inorganic material. A black matrix(160) is formed on the protection layer. The cover layer is formed on the black matrix.

Abstract translation: 目的：提供一种有机发光显示装置，用于当黑矩阵被图案化时，通过在滤色器层和黑矩阵之间插入保护层来防止对滤色器层的损坏。 构成：显示单元（120）形成在基板上并且包括有机发光器件。 在显示单元上形成封装层（130）以封装显示单元。 在封装层上形成滤色器层（140）。 保护层（150）形成在滤色器层上。 保护层包括无机材料。 在保护层上形成黑矩阵（160）。 覆盖层形成在黑色矩阵上。

公开(公告)号：KR1020090028592A

公开(公告)日：2009-03-18

申请号：KR1020090008392

申请日：2009-02-03

Applicant: 삼성모바일디스플레이주식회사

Inventor： 서민철

IPC: H01L29/786 ,  G02F1/167

CPC classification number: G02F1/167 ,  H01L51/0512

Abstract: An electrophoretic display device and a manufacturing method thereof are provided to improve productivity and to perform a full color by easily forming a color filter by a control of a laser irradiation position. An electrophoretic display device includes a first substrate(1), a second substrate(2), and a third substrate(3). The second substrate is coupled in one surface of the first substrate. The third substrate is coupled in one surface of the second substrate. The first substrate includes a first base substrate(11), thin film transistors(12, 13, 14a, 14b, 15), an insulating layer(16), and a pixel electrode(17). The thin film transistors are formed on the first base substrate. The insulating layer is positioned in one surface of the first base substrate, and covers the thin film transistors. The pixel electrode is positioned in one surface of the insulating layer, and is connected to the thin film transistors. The second substrate includes a second base substrate(21), a common electrode(22), and an electrophoretic layer(23). The electrophoretic layer includes an electrophoretic particle(24b, 24c) and an electrophoretic dispersing medium(24a). The third substrate includes a third base substrate(31) and a color filter(32). The third base substrate is made of transparent material. The color filter is formed on the third base substrate.

Abstract translation: 提供电泳显示装置及其制造方法，以通过控制激光照射位置容易地形成滤色器来提高生产率并进行全色。 电泳显示装置包括第一基板（1），第二基板（2）和第三基板（3）。 第二衬底耦合在第一衬底的一个表面中。 第三衬底耦合在第二衬底的一个表面中。 第一基板包括第一基板（11），薄膜晶体管（12,13,14a，14b，15），绝缘层（16）和像素电极（17）。 薄膜晶体管形成在第一基底基板上。 绝缘层位于第一基底基板的一个表面上并覆盖薄膜晶体管。 像素电极位于绝缘层的一个表面，并连接到薄膜晶体管。 第二基板包括第二基板（21），公共电极（22）和电泳层（23）。 电泳层包括电泳颗粒（24b，24c）和电泳分散介质（24a）。 第三基板包括第三基底（31）和滤色器（32）。 第三基底由透明材料制成。 滤色器形成在第三基底上。

公开(公告)号：KR1020070041129A

公开(公告)日：2007-04-18

申请号：KR1020050096938

申请日：2005-10-14

Applicant: 삼성모바일디스플레이주식회사

Inventor： 안택 ,  서민철 ,  박진성 ,  모연곤

IPC: H01L29/786

Abstract: 본 발명은 하부층의 손상이 방지되면서도 용이하게 패터닝된 게이트 전극을 구비하는 박막 트랜지스터 제조방법을 위하여, 기판 상에 소스 전극 및 드레인 전극을 형성하는 단계와, 상기 소스 전극 및 상기 드레인 전극에 각각 접하도록 반도체층을 형성하는 단계와, 상기 반도체층 상에 절연막을 형성하는 단계와, 상기 절연막 상에 제 1 도전층을 형성하는 단계와, 상기 제 1 도전층에 레이저빔을 조사하여 게이트 전극으로 패터닝하는 단계를 구비하는 것을 특징으로 하는 박막 트랜지스터 제조방법을 제공한다.

公开(公告)号：KR1020060112866A

公开(公告)日：2006-11-02

申请号：KR1020050035553

申请日：2005-04-28

Applicant: 삼성모바일디스플레이주식회사

Inventor： 서민철 ,  이헌정

IPC: H01L29/786

CPC classification number: H01L51/10 ,  H01L51/0002 ,  H01L51/0512 ,  H01L51/107

Abstract: An OTFT(organic thin film transistor) is provided to avoid a leakage current caused by accumulation of carriers while an organic semiconductor layer is formed to separate channel regions of adjacent thin film transistors by a simple process by forming an organic semiconductor layer by a CMP process while using a channel separation layer as a polishing stop layer. A source/drain electrode(121) is formed on a substrate(110). A channel separation layer(120) is formed on the substrate, including an opening part. A semiconductor layer(135) is formed in the opening part of the channel separation layer, coming in contact with the source/drain electrode. A gate(150) is formed on the substrate. A gate insulation layer(140) is formed between the source/drain electrode and the gate. The semiconductor layer includes an organic semiconductor layer.

Abstract translation: 提供了一种OTFT（有机薄膜晶体管），以避免由于载流子的积聚引起的漏电流，同时通过简单的工艺形成有机半导体层来分离相邻薄膜晶体管的沟道区域，通过CMP工艺形成有机半导体层 同时使用通道分离层作为抛光停止层。 源极/漏极（121）形成在衬底（110）上。 在基板上形成沟道分离层（120），包括开口部分。 在沟道分离层的开口部分形成半导体层（135），与源/漏电极接触。 在基板上形成栅极（150）。 在源/漏电极和栅极之间形成栅极绝缘层（140）。 半导体层包括有机半导体层。