Abstract:
본 발명은 저저항 금속패턴 형성 방법에 관한 것으로, 보다 상세하게(ⅰ) 광촉매 화합물을 기판에 코팅하여 광촉매 필름을 형성하는 단계; (ⅱ) 상기 광촉매 필름 상에 수용성 고분자 화합물을 코팅하여 수용성 고분자 층을 형성하는 단계; (ⅲ) 상기 광촉매 필름 및 수용성 고분자 층을 선택적으로 노광하여 결정성장용 핵의 잠재적 패턴을 수득하는 단계; 및 (ⅳ) 상기 결정성장용 핵의 잠재적 패턴을 도금처리하여 금속결정을 성장시켜 금속패턴을 수득하는 단계를 포함하는 금속패턴 형성방법에 관한 것이다. 본 발명에 따른 방법에 의할 경우, 저저항 금속을 포함한 다층 배선 패턴을 비교적 간단한 공정을 통해 형성할 수 있고, 각 층을 구성하는 금속도 필요에 따라 자유롭게 택할 수 있으며, 제조 단가도 저렴하여 LCD, PDP, EL과 같은 평판 표시 소자에 쉽게 적용할 수 있다.
Abstract:
PURPOSE: Provided are a siloxane-based resin with superior solubility in an organic solvent and good fluidity, and an interlayer insulating film formed therefrom having excellent mechanical physical properties. CONSTITUTION: The siloxane-based resin is prepared by hydrolysis and condensation of a monomer represented by the formula 1 and a monomer selected from the group consisting of compounds represented by the formula 2 to 6 in the presence of an organic solvent using an acid or a basic catalyst, and water. In the formula 1-6, R, R1 and R2 are independently a hydrogen atom, a C1-C3 alkyl group, a C6-C10 cycloalkyl group, or a C6-C15 aryl group, X1-X6 are independently a halogen atom or a C1-C5 alkoxy group, m is an integer of 1-5, n and s is an integer of 1-3, p and q are each an integer of 0-1, r is an integer of 0-10, and t is an integer of 3-8. The interlayer insulating film is formed by dissolving such siloxane-based resin in an organic solvent and coating the solution onto a silicone substrate, followed by heat-curing.
Abstract:
PURPOSE: Provided is a siloxane resin, which has excellent physical properties and a low dielectric constant, and is useful for an interlayer dielectric film for semiconductors having excellent physical properties, thermal stability and cracking resistance. CONSTITUTION: The siloxane resin is obtained by carrying out hydrolysis and condensation of a monomer represented by the following formula 1 and a monomer represented by the following formula 2 by using an acid or base catalyst in the presence of an organic solvent. In formula 1, R1 is H, a C1-C3 alkyl or C6-C15 aryl; each of X1, X2 and X3 independently represents a C1-C3 alkyl, C1-C10 alkoxy or a halogen atom, at least one of X1, X2 and X3 being a hydrolyzable functional group; m is an integer of 0-10; and p is an integer of 3-8. In formula 2, each R2 independently represents H, a C1-C3 alkyl or C6-C15 aryl; X4 is a C1-C10 alkoxy; Y is a C1-C3 alkyl or C1-C10 alkoxy; and n is an integer of 1-10.
Abstract:
A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows:wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.
Abstract:
PURPOSE: A composition for the formation of a conjugated polymer pattern and a method for forming a conjugated polymer pattern by using the composition are provided, to allow a conjugated polymer to be patterned effectively and simply. CONSTITUTION: The composition comprises a precursor polymer represented by the formula 1; and a photobase generator, wherein R is an aromatic monocyclic hydrocarbon group, a aromatic polycyclic hydrocarbon group, an acyclic unsaturated hydrocarbon group, or a monocyclic unsaturated hydrocarbon group having at least one hetero atom; and X is Br, Cl or I. Preferably the photobase generator is represented by the formula 2, wherein R1 is H, an alkyl or alkoxy group of C1-C10, a halogen atom, or an alkyl or alkoxy group having at least Si; R2 is a nitro group substituted at one or both ortho position; R3 is a phenyl group, a naphthalenyl group, a linear or cyclic alkyl group of C1-C10, a halogen atom, or an alkyl group of C1-C10 having N, O or S; and i is 1 or 2.
Abstract:
PURPOSE: Provided are a photosensitive polymer having improved resist properties necessary to form a submicron pattern size, and a resist composition comprising the same. CONSTITUTION: The photosensitive polymer has monomers represented by formula 3. Particularly, the photosensitive polymer has a structure represented by formula 4(wherein R1 is hydrogen or C1-C20 hydrocarbon group, n is a value of 1-7, m/(m+n) is 0,1-0.6), and has a weight average molecular weight of 3,000-50,000. The resist composition comprises (a) the photosensitive polymer, and (b) 1-15 wt% photoacid generator(based on weight of the photosensitive polymer). The composition further comprises 0.01-2 wt% of organic base(based on weight of the photosensitive polymer).
Abstract:
본 발명은 플렉서블 전기변색 소자 및 그 제조방법에 관한 것으로, 더욱 상세하게는 감광성 절연막을 프린팅하여 절연층을 형성하고, 전기영동을 이용하여 소정의 패턴으로 정착된 반도체층을 가압하여 압축함으로써 표시소자의 콘트라스트 및 구동특성이 향상된 플렉서블 전기변색 소자 및 그 제조방법에 관한 것이다. 전기변색 소자, 감광성 절연막, 프린팅, 절연층, 전기영동, 가압, 반도체층
Abstract:
An electroless copper plating solution is provided to form a copper plating film having excellent adhesive force and low electrical resistance, a method for preparing the electroless copper plating solution is provided, and an electroless copper plating method is provided to form an electroless copper plating film having stable and improved adhesive force and low electrical resistance by using the electroless copper plating solution. An electroless copper plating solution comprises a copper salt, a complex agent, a reducing agent, and a pH adjusting agent, wherein the plating solution comprises an acid solution of 2,2'-dipyridyl and has a pH range of 11.5 to 13.0. The electroless copper plating solution has mole ratios of the complex agent and the reducing agent to the copper salt of 1:3 and 1:4 respectively. The plating solution comprises 0.01 to 0.05 mole/L of a copper salt, 0.03 to 0.15 mole/L of a complex agent, 0.04 to 0.20 mole/L of a reducing agent, 0.1 to 0.2 mole/L of a pH adjusting agent, and 0.1 to 0.5 mmol/L of an acid solution of 2,2'-dipyridyl. A method for preparing an electroless copper plating solution comprises the steps of: sequentially dissolving a copper salt, a complex agent, and a reducing agent into water to prepare a plating solution; adjusting a pH(potential of hydrogen) of the plating solution to a range of 11.5 to 13.0 using a pH adjusting agent; dissolving 2,2'-dipyridyl into a mixed solution of water and an acid to prepare an acid solution of 2,2'-dipyridyl; and mixing the acid solution of 2,2'-dipyridyl with the pH-adjusted plating solution.
Abstract:
A transparent electrode is provided to simply fabricate a transparent electrode with high penetration and low resistance by performing a plating process instead of a sputtering process necessitating expensive vacuum equipment. A grid electrode(20) is formed on a transparent substrate(10). A nano metal layer(30) is formed on the grid electrode. A conductive high polymer layer(40) is formed on the grid electrode and the nano metal layer. The substrate can be a transparent inorganic substrate like glass or quartz or a transparent plastic substrate selected from a group composed of PET(polyethylene terephthalate), PEN(polyethylene naphathalate), PES(polyethylene sulfone), polycarbonate, polystyrene, polyester, acrylic resin, olefin maleic copolymer and norbornene-based resin.
Abstract:
A flexible electrochromic device, and a method for manufacturing the same are provided to improve a driving characteristic of an electrochromic device by forming an insulating layer on a transparent electrode, and improve the characteristic of a display device by forming a pattern of high quality by electrophoretic deposition and a compression process. An insulating layer is formed on a flexible transparent electrode(10) except a predetermined pattern. A nanocrystalline semiconductor layer(30) is formed on the transparent electrode at the predetermined pattern by using electrophoretic deposition. An electrochromic monomolecular layer(40) is formed on the semiconductor layer. A flexible opposite electrode(50) is arranged to face the transparent electrode. An electrolyte(60) is formed in a space between the transparent electrode and the opposite electrode.