公开(公告)号：KR1020060054847A

公开(公告)日：2006-05-23

申请号：KR1020040093678

申请日：2004-11-16

Applicant: 삼성전자주식회사

Inventor： 조홍제 ,  임관택 ,  이영식

IPC: H01L21/3063

CPC classification number: H01L21/67051 ,  H01L21/67057 ,  H01L21/6776

Abstract: 식각 방식을 개선하여 식각 성능을 향상시킨 식각 장치가 개시된다. 식각 장치는 로더, 언로더, 제 1 식각 유닛 및 제 2 식각 유닛을 포함한다. 로더는 식각 공정이 수행될 기판들을 수납하고, 언로더는 식각 공정이 수행된 기판들을 수납한다. 제 1 식각 유닛은 로더와 언로더 사이에 배치되며, 로더로부터 제공되는 기판들 중 제 1 경로를 따라 이송된 제 1 기판에 식각 공정을 수행한다. 제 2 식각 유닛은 로더와 언로더 사이에 배치되며, 로더로부터 제공되는 기판들 중 제 2 경로를 따라 이송된 제 2 기판에 식각 공정을 수행한다. 이에 따라, 1개의 식각 공정 라인에서 피식각 기판의 특성에 따라 선택적으로 식각 공정을 다르게 할 수 있다.
습식, 식각, 장치, 로더, 언로더, 식각 유닛, 기판

公开(公告)号：KR1020050040283A

公开(公告)日：2005-05-03

申请号：KR1020030075447

申请日：2003-10-28

Applicant: 삼성전자주식회사

Inventor： 조홍제 ,  정창오 ,  이육래 ,  최동욱 ,  김영선 ,  강성철

IPC: G02F1/136

Abstract: 본 발명은 액정표시장치 및 그 제조방법에 관한 것으로서, 본 발명의 액정표시장치는 TFT 기판의 가장자리에 금속층과 상기 금속층의 상층에 투명전도층을 갖는 액정표시장치에 있어서, 상기 투명전도층은 상기 금속층의 상면을 노출시키는 개방부를 갖는 것을 특징으로 한다. 이에 의해 그로스 테스트를 수행할 때 패드부와 프로브 핀 사이의 접촉이 안 되는 것을 방지하고 접촉저항을 감소시킬 수 있다.

公开(公告)号：KR1020040071911A

公开(公告)日：2004-08-16

申请号：KR1020030007825

申请日：2003-02-07

Applicant: 삼성전자주식회사

Inventor： 박애나 ,  조홍제 ,  강성철

IPC: G02F1/136

Abstract: PURPOSE: A method for fabricating a thin film transistor substrate is provided to form a lightly doped region while simultaneously etching upper and lower patterns. CONSTITUTION: An amorphous silicon is deposited on an insulating substrate and heat-treated to form a polysilicon layer. The polysilicon layer is patterned to form a polysilicon pattern. A gate insulating layer(140), a gate metal layer, and a metal layer for a mask are sequentially formed on the polysilicon pattern. A photoresist pattern is formed on the metal layer for a mask and the metal layer for a mask and the gate metal layer are etched using the photoresist pattern as a mask to form a doping mask pattern and gate lines(123a,123b,123c). Impurities are heavily doped into the polysilicon pattern using the doping mask pattern as a mask to form source and drain regions(153c,155c). The doping mask pattern is removed and impurities are lightly doped into the polysilicon pattern to form lightly doped regions(157a,157b). The doping mask pattern is wider than the gate line.

Abstract translation: 目的：提供一种制造薄膜晶体管基板的方法，以形成轻掺杂区域同时蚀刻上下图案。 构成：将非晶硅沉积在绝缘衬底上并进行热处理以形成多晶硅层。 图案化多晶硅层以形成多晶硅图案。 在多晶硅图案上依次形成栅极绝缘层（140），栅极金属层和掩模用金属层。 在掩模用金属层和掩模用金属层上形成光致抗蚀剂图形，并使用光致抗蚀剂图案作为掩模蚀刻栅极金属层，形成掺杂掩模图案和栅极线（123a，123b，123c）。 使用掺杂掩模图案作为掩模将杂质重掺杂到多晶硅图案中以形成源区和漏区（153c，155c）。 去除掺杂掩模图案，并将杂质轻掺杂到多晶硅图案中以形成轻掺杂区域（157a，157b）。 掺杂掩模图案比栅极线宽。

公开(公告)号：KR1020040014183A

公开(公告)日：2004-02-14

申请号：KR1020030034007

申请日：2003-05-28

Applicant: 삼성전자주식회사

Inventor： 박홍식 ,  강성철 ,  조홍제

IPC: G02F1/136

Abstract: PURPOSE: An etchant for interconnect and a method for fabricating a thin film display using the same are provided to minimize fabrication costs as well as simplify a fabrication process. CONSTITUTION: According to the method, a gate line(121) having a gate electrode(123) is formed on a substrate. A gate insulation film is formed on the above substrate. A semiconductor layer is formed on an upper part of the gate insulation film. A drain electrode and a data line having a source electrode are formed. And a pixel electrode(190) connected with the above drain electrode is formed. The gate line, the data line, the drain electrode, and the pixel electrode are patterned using the same etchant.

Abstract translation: 目的：提供用于互连的蚀刻剂和使用其的薄膜显示器的制造方法，以最小化制造成本以及简化制造工艺。 构成：根据该方法，在基板上形成具有栅电极（123）的栅极线（121）。 在上述基板上形成栅极绝缘膜。 半导体层形成在栅极绝缘膜的上部。 形成漏电极和具有源电极的数据线。 并且形成与上述漏电极连接的像素电极（190）。 使用相同的蚀刻剂对栅极线，数据线，漏电极和像素电极进行图案化。

公开(公告)号：KR1020040009100A

公开(公告)日：2004-01-31

申请号：KR1020020042932

申请日：2002-07-22

Applicant: 삼성전자주식회사

Inventor： 강성철 ,  조홍제 ,  박홍식

IPC: G03F7/42

Abstract: PURPOSE: A method for recycling a photoresist stripper is provided, to prevent the environmental pollution due to the waste and to reduce the cost by recycling the photoresist stripper waste solution wasted after the gate process of the LCD or semiconductor manufacturing process. CONSTITUTION: The method comprises the steps of collecting a photoresist stripper waste solution from an apparatus attached with an additional waste solution collection vessel through a transport pipe; distilling the collected photoresist stripper waste solution to remove water; distilling the photoresist stripper waste solution where water is removed step by step to collect the each component of the photoresist stripper in each tank; and mixing the collected components in the composition equal to that of the source solution. The photoresist stripper waste solution comprises 1-50 wt% of an organic amine compound, 40-70 wt% of a protic glycol ether compound, and 40-70 wt% of an aprotic multipolar compound.

Abstract translation: 目的：提供一种回收光致抗蚀剂剥离剂的方法，以防止由于废物引起的环境污染，并通过循环在LCD或半导体制造过程的栅极处理之后浪费的光致抗蚀剂剥离器废液来降低成本。 方案：该方法包括以下步骤：通过运输管从附加有废液收集容器的装置收集光致抗蚀剂剥离剂废液; 蒸馏收集的光致抗蚀剂剥离剂废液以除去水分; 蒸馏除去水分的光致抗蚀剂剥离剂废液，逐步收集每个罐中的光致抗蚀剂剥离器的每个组分; 并将组合物中所收集的组分与源溶液的组成相当。 光致抗蚀剂剥离剂废溶液包含1-50重量％的有机胺化合物，40-70重量％的质子二醇醚化合物和40-70重量％的非质子多极化合物。

公开(公告)号：KR1020040005049A

公开(公告)日：2004-01-16

申请号：KR1020020039333

申请日：2002-07-08

Applicant: 삼성전자주식회사

Inventor： 박애나 ,  강성철 ,  박홍식 ,  조홍제 ,  박봉옥

IPC: H01L29/786

Abstract: PURPOSE: A method for forming a reflective layer pattern and a method for forming a TFT substrate using the same are provided to simplify a fabrication process by using photosensitive organic metal complexes. CONSTITUTION: An organic metal layer is formed by using photosensitive organic metal complexes. An exposure process for the organic metal layer is performed by using a photo mask. A reflective layer pattern is formed by performing a developing process for the organic metal layer. A heat treatment process for the reflective layer pattern is performed. The heat treatment process is performed under the temperature of 100 to 150 degrees centigrade. The developing process for the organic metal layer is performed by using organic solvent.

Abstract translation: 目的：提供一种用于形成反射层图案的方法和使用其形成TFT基板的方法，以通过使用光敏有机金属络合物来简化制造工艺。 构成：通过使用光敏有机金属络合物形成有机金属层。 通过使用光掩模进行有机金属层的曝光处理。 通过对有机金属层进行显影处理形成反射层图案。 执行反射层图案的热处理工艺。 热处理过程在100至150摄氏度的温度下进行。 有机金属层的显影方法通过使用有机溶剂进行。

公开(公告)号：KR1020030095605A

公开(公告)日：2003-12-24

申请号：KR1020020032884

申请日：2002-06-12

Applicant: 삼성전자주식회사

Inventor： 박홍식 ,  강성철 ,  조홍제 ,  박애나 ,  박봉옥 ,  정창오

IPC: H01L29/786

CPC classification number: H01L21/28008 ,  G03F7/0047 ,  H01L21/288 ,  H01L21/32051 ,  H01L27/12 ,  H01L27/124 ,  H01L29/66765 ,  H01L29/78669 ,  H01L51/0003 ,  H01L51/0015 ,  H01L51/0021 ,  H01L51/0545

Abstract: PURPOSE: A method for forming a metal pattern and a method for manufacturing a TFT(Thin Film Transistor) substrate using the same are provided to be capable of simplifying manufacturing processes by exposing and developing a photosensitive organic metal layer for forming the metal pattern. CONSTITUTION: An organic metal layer is formed by coating photosensitive organic metal adhering agent. An exposure process is carried out at the organic metal layer by using a photo mask. A metal pattern is formed by carrying out a development process at the organic metal layer. Preferably, the organic metal layer developing process is carried out by using organic solution. Preferably, a light blocking pattern of the photo mask is formed into a predetermined shape.

Abstract translation: 目的：提供一种用于形成金属图案的方法和使用其的制造TFT（薄膜晶体管）基板的方法，以便通过曝光和显影用于形成金属图案的光敏有机金属层来简化制造工艺。 构成：通过涂布感光性有机金属粘合剂形成有机金属层。 通过使用光掩模在有机金属层进行曝光处理。 通过在有机金属层进行显影处理来形成金属图案。 优选地，有机金属层显影处理通过使用有机溶液进行。 优选地，光掩模的遮光图案形成为预定的形状。