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公开(公告)号：KR1020130075810A
公开(公告)日：2013-07-08
申请号：KR1020110144056
申请日：2011-12-28
Applicant: 한국전기연구원
IPC: H01L21/306 , H01L33/00
Abstract: PURPOSE: A method for manufacturing a photonic crystal band-gap element using a wet etching process is provided to utilize a chemical-mechanical polishing (CMP) process, thereby easily manufacturing the element. CONSTITUTION: A method for manufacturing a photonic crystal band-gap element using a wet etching process includes: a step (105) of bonding two wafers with a metal layer; a step (110) of implementing a chemical-mechanical polishing (CMP) process on the upper wafer, and adjusting the thickness of the upper wafer; a step (120) of forming a mask pattern using a photosensitive etching mask; and a step (125) of implementing a wet etching process on the mask pattern. [Reference numerals] (105) Wafer bonding; (110) Chemical-mechanical polishing; (115) Photonic crystal structure compensating circuit construction; (120) Pattern formation; (125) Preparation through a wet etch process; (AA) Start; (BB) End
Abstract translation: 目的：提供使用湿式蚀刻工艺制造光子晶体带隙元件的方法，以利用化学机械抛光（CMP）工艺，从而容易地制造元件。 构成：使用湿蚀刻工艺制造光子晶体带隙元件的方法包括：将两个晶片与金属层接合的步骤（105）; 在上晶片上实施化学机械抛光（CMP）工艺的步骤（110），并调节上晶片的厚度; 使用光敏蚀刻掩模形成掩模图案的步骤（120）; 以及在掩模图案上实施湿蚀刻工艺的步骤（125）。 （附图标记）（105）晶片接合; （110）化学机械抛光; （115）光子晶体结构补偿电路结构; （120）图案形成; （125）通过湿蚀刻工艺制备; （AA）开始; （BB）结束
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公开(公告)号：KR101264099B1
公开(公告)日：2013-05-14
申请号：KR1020110067335
申请日：2011-07-07
Applicant: 한국전기연구원
IPC: H01L21/66
Abstract: 본발명은다중접합반도체의공극검사장치및 방법에관한것이다. 보다상세하게는전자기파를이용하여다중접합반도체의제조과정에서실시간으로다중접합반도체에대한공극검사가가능한다중접합반도체의공극검사장치및 방법에관한것이다. 본발명은다중접합반도체의공극검사장치에있어서, 테라헤르츠광을발생시켜하부에배치된상기다중접합반도체측으로조사하는광원; 상기광원과상기다중접합반도체사이에배치되어상기광원으로부터조사되는테라헤르츠광을균일하게상기다중접합반도체측으로조사하는평행광조사부; 상기다중접합반도체하부에배치되어상기다중접합반도체를투과한테라헤르츠광을집속하는광 집속부; 및상기광 집속부에서집속된테라헤르츠광을검출하는제1 광검출부를포함하는것을특징으로한다. 본발명에의하면테라헤르츠파를이용하여다중접합반도체에대한공극검사를수행하므로수중검사가불필요하여실시간으로다중접합반도체에대한전수검사가가능함과동시에공기에대한투과가가능하므로공극이후에대한검사또한가능한효과를갖는다.
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公开(公告)号：KR101214450B1
公开(公告)日：2012-12-21
申请号：KR1020110096249
申请日：2011-09-23
Applicant: 한국전기연구원
IPC: H01J25/02
Abstract: PURPOSE: A vacuum electronic device is provide to increase intensity of an electric field by locating a slow wave lattice circuit inside a rectangular waveguide, thereby enhancing the efficiency of the electromagnetic waves. CONSTITUTION: A cross section of a slow wave circuit(34) is arranged inside a rectangular waveguide. The cross section of the slow wave circuit is in an inverted triangle shape. An output unit hole is perpendicular to the lower side of an electronic beam input hole. Electronic beams proceed to the electronic beam focusing part(33) passing over the metal gratings, which induces an electric field. An output unit(35) is formed in the lower part of the input hole to be perpendicular to the electronic beams moving area.
Abstract translation: 目的：提供一种真空电子装置，通过将矩形波导内的慢波晶格电路定位来提高电场强度，从而提高电磁波的效率。 构成：慢波电路（34）的横截面布置在矩形波导内。 慢波电路的横截面呈倒三角形。 输出单元孔垂直于电子束输入孔的下侧。 电子束进入通过金属光栅的电子束聚焦部分（33），这引起电场。 输入单元（35）形成在输入孔的下部，以垂直于电子束移动区域。
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公开(公告)号：KR101121639B1
公开(公告)日：2012-03-09
申请号：KR1020090116765
申请日：2009-11-30
Applicant: 한국전기연구원 , 세종대학교산학협력단
Abstract: 본발명은전자방출장치의음극부구조에관한것으로서, 전자를방출하는음극부; 및상기음극부의상부에배치되는양극부;를포함하는전자방출장치에있어서, 상기음극부는, 표면에요철이형성된기판; 및상기기판의상부에형성되는에미터;를포함하는것을특징으로하며, 음극부의기판에형성된요철에의해에미터로부터방출되는단위면적당방출전류를최대화시킬수 있는음극부를제공할수 있다.
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公开(公告)号：KR1020100058750A
公开(公告)日：2010-06-04
申请号：KR1020080117266
申请日：2008-11-25
Applicant: 한국전기연구원
Abstract: PURPOSE: A pulse electron amplifier using one side of a cavity resonator is provided to generate a pulse electron beam with electron amplification by a secondary electron on one wall of a resonator by additionally applying an AC voltage to the cavity resonator with a constant DC voltage through an electromagnetic wave. CONSTITUTION: A pulse electron amplifier is comprised of two metal plates(510,520) and a dielectric rod with a photonic crystal structure. A protruded surface(521) is formed in a longitudinal direction vertical to an electron beam direction. A DC voltage is applied between two metal plates. An electromagnetic wave passes between the dielectric rods with the photonic crystal structure as an AC voltage. The protruded surface generates an electronic beam through the electron amplification according to the size of the electromagnetic wave and the DC voltage.
Abstract translation: 目的：提供使用空腔谐振器的一侧的脉冲电子放大器，通过在恒定的直流电压通过附加地向空腔谐振器施加AC电压，以在谐振器的一个壁上产生具有通过二次电子的电子放大的脉冲电子束 电磁波。 构成：脉冲电子放大器由两个金属板（510,520）和具有光子晶体结构的介质棒组成。 在垂直于电子束方向的纵向方向上形成突出表面（521）。 在两块金属板之间施加一个直流电压。 电磁波通过光电晶体结构的介质棒之间作为交流电压。 突出表面根据电磁波的大小和直流电压通过电子放大产生电子束。
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Patent Agency Ranking
公开(公告)号：KR1020100055657A
公开(公告)日：2010-05-27
申请号：KR1020080114486
申请日：2008-11-18
Applicant: 한국전기연구원
IPC: G02B27/00
CPC classification number: G02B26/122 , G02B17/023 , G02B17/06 , G02B26/105
Abstract: PURPOSE: An optical delay line using a rotating planar reflector is provided to increase the repetition rate of a time delay by including a reflection structure. CONSTITUTION: An optical delay line comprises a reflection structure. The reflection structure comprises a plurality of an V-type reflection surface(10). The reflecting surface forms an arbitrary angle. The reflection structure revolves around a rotary shaft at a constant angular velocity. The reflection structure changes the optical path difference of an incident light. The reflection structure reflects reversely the incident light. The optical delay line comprises a retro-reflector(50).
Abstract translation: 目的：提供使用旋转平面反射器的光学延迟线，以通过包括反射结构来增加时间延迟的重复率。 构成：光学延迟线包括反射结构。 反射结构包括多个V型反射面（10）。 反射面形成任意角度。 反射结构围绕旋转轴以恒定角速度旋转。 反射结构改变入射光的光程差。 反射结构反映了入射光。 光学延迟线包括后向反射器（50）。
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公开(公告)号：KR1020100010558A
公开(公告)日：2010-02-02
申请号：KR1020080071466
申请日：2008-07-23
Applicant: 한국전기연구원
IPC: H01L27/04 , H01L21/3063
Abstract: PURPOSE: A manufacturing method of a photonic crystal passive device using wet etching is provided to use all dielectric photonic crystal properties by coating a silicon crystal with a conductive material. CONSTITUTION: A photonic crystal structure is formed on a silicon wafer(21) through an anisotropic wet process. A dielectric layer(22) used as an etching mask is deposited. A photoresist(23) is coated on the dielectric layer by using a spin coater. The dielectric layer and photoresist are patterned. The remaining photoresist is removed by using an asher. A silicon cover is coated with a high conductivity material to prevent the loss of electromagnetic wave.
Abstract translation: 目的：提供使用湿蚀刻的光子晶体无源器件的制造方法，以通过用导电材料涂覆硅晶体来使用所有介电光子晶体性质。 构成：通过各向异性湿法在硅晶片（21）上形成光子晶体结构。 沉积用作蚀刻掩模的电介质层（22）。 通过使用旋转涂布机将光致抗蚀剂（23）涂覆在电介质层上。 图案化电介质层和光致抗蚀剂。 剩余的光致抗蚀剂通过使用灰渣除去。 硅覆盖层涂覆有高导电性材料，以防止电磁波的损失。
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公开(公告)号：KR1020090056202A
公开(公告)日：2009-06-03
申请号：KR1020070123258
申请日：2007-11-30
Applicant: 한국전기연구원
Abstract: A cold cathode electron source and manufacturing method thereof are provided to reduce the manufacturing cost by using the insulator formation technology which uses a wet etch process and adhesive. The cold cathode electron source comprises a cold cathode and a grid body portion. The cold cathode comprises a first silicon wafer(110), a conductive metal(120), and an insulating adhesive(130) and an electric field emission material(140). The grid body portion comprises a grid and a metal layer(220). The grid is formed in the one side of the second silicon wafer(210). The lamination film is laminated on the reverse surface of the second silicon wafer. The grid is exposed in the opposite of the second silicon wafer.
Abstract translation: 提供冷阴极电子源及其制造方法，以通过使用使用湿蚀刻工艺和粘合剂的绝缘体形成技术来降低制造成本。 冷阴极电子源包括冷阴极和栅极体部分。 冷阴极包括第一硅晶片（110），导电金属（120）和绝缘粘合剂（130）和电场发射材料（140）。 网格体部分包括网格和金属层（220）。 格栅形成在第二硅晶片（210）的一侧。 层压膜层压在第二硅晶片的反面上。 栅格暴露在与第二硅晶片相对的位置。
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