公开(公告)号：KR1019920006897B1

公开(公告)日：1992-08-21

申请号：KR1019880017986

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 박성호 ,  강봉구 ,  이영수 ,  김보우 ,  김진섭

IPC: H01L21/00

Abstract: A grid having ground level is deposited between a plasma discharging cavity and an etching process cavity to form a RF bias applied ECR etching apparatus and the grid is moved up and down to change the mode of microwave. The apparatus includes a plasma discharging cavity (2) in which a gas discharge is occured, a wave guide (5) for guiding microwave having frequency of 2.45 GHz to the top of the cavity (2), a microwave generator having a structure to prevent damage of a magnetron due to reverse microwave, a solenoid magnetic coil (8) for providing magnetic flux density of 875 Gauss to generate divergent magnetic field, and a process cavity (1) for etching a semiconductor plate.

Abstract translation: 具有接地电平的栅极沉积在等离子体放电腔和蚀刻工艺腔之间以形成施加RF偏压的ECR蚀刻装置，栅格上下移动以改变微波模式。 该装置包括其中产生气体放电的等离子体放电腔（2），用于将频率为2.45GHz的微波引导到空腔（2）的顶部的波导（5），具有防止 由于反向微波而导致的磁控管的损坏，用于提供875高斯的磁通密度以产生发散磁场的螺线管磁线圈（8）和用于蚀刻半导体板的工艺空腔（1）。

公开(公告)号：KR100051955B1

公开(公告)日：1992-06-04

申请号：KR1019890012068

申请日：1989-08-24

Applicant: 한국전자통신연구원

Inventor： 이종람 ,  박성호 ,  맹성재 ,  김진섭

IPC: H01L23/52 ,  H01L27/04

公开(公告)号：KR1019900010920A

公开(公告)日：1990-07-11

申请号：KR1019880017986

申请日：1988-12-30

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 박성호 ,  강봉구 ,  이영수 ,  김보우 ,  김진섭

IPC: H01L21/00

Abstract: 내용 없음