公开(公告)号：KR100388496B1

公开(公告)日：2003-06-25

申请号：KR1020010012585

申请日：2001-03-12

Applicant: 한국전자통신연구원

Inventor： 이정익 ,  추혜용 ,  도이미 ,  김성현 ,  이효영 ,  정태형

IPC: C09K11/06

Abstract: PURPOSE: Provided are an organic, electroluminescent polymer compound which has high luminescence efficiency and excellent adhesion to insulation layer or metal electrode, and an organic, electroluminescent device comprising the same. CONSTITUTION: The organic, electroluminescent polymer compound has a structure represented by formula 1. In the formula 1, Ar is an aryl group having polar side chain, R3 and R4, which are same or different, represent a linear or branched alkyl group having C1-C20, each of x and y represents a ratio of each monomer and 0.01

Abstract translation: 目的：提供具有高发光效率和对绝缘层或金属电极的优异粘附性的有机电致发光聚合物化合物以及包含其的有机电致发光器件。 构成：有机电致发光聚合物化合物具有由式1表示的结构。在式1中，Ar为具有极性侧链的芳基，R 3和R 4相同或不同，表示具有C 1的直链或支链烷基 -C20，x和y中的每一个表示每种单体的比例并且0.01

公开(公告)号：KR1020080041975A

公开(公告)日：2008-05-14

申请号：KR1020070053741

申请日：2007-06-01

Applicant: 한국전자통신연구원

Inventor： 최낙진 ,  이정현 ,  박강호 ,  이효영 ,  이형근 ,  김종대

IPC: C08G64/02 ,  C08G64/20 ,  C08G64/40 ,  C08J3/00

Abstract: A method for producing a highly stable polymer actuator is provided to allow the use of a polymer actuator at a low temperature and even after treatment at an extremely high temperature. A method for producing a highly stable polymer actuator comprises: a step(S11) of preparing an ionic polymer/metal composite comprising metal electrodes plated on both surfaces of a conductive polymer membrane; a step(S12) of removing water from the conductive polymer membrane of the ionic polymer/metal composite; and a step(S13) of swelling the ionic polymer/metal composite in a polar solvent having a higher boiling point and a lower freezing point than water. The polar solvent includes propylene carbonate.

Abstract translation: 提供了一种制造高度稳定的聚合物致动器的方法，以允许在低温下甚至在极高温度下处理之后使用聚合物致动器。 制造高度稳定的聚合物致动器的方法包括：制备离子聚合物/金属复合物的步骤（S11），其包含镀在导电聚合物膜的两个表面上的金属电极; 从离子型聚合物/金属复合体的导电性聚合物膜除去水的工序（S12） 和在具有比水高的沸点和低冰点的极性溶剂中使离子聚合物/金属复合物膨胀的步骤（S13）。 极性溶剂包括碳酸亚丙酯。

公开(公告)号：KR100820182B1

公开(公告)日：2008-04-08

申请号：KR1020070054562

申请日：2007-06-04

Applicant: 한국전자통신연구원

Inventor： 최낙진 ,  정민경 ,  박강호 ,  이효영 ,  김종대

IPC: H01L21/027 ,  B82Y40/00

CPC classification number: G03F7/0002 ,  B81C1/0046 ,  B82Y40/00 ,  H01L21/02603 ,  Y10S977/887

Abstract: A method for fabricating a nano wire device using nano imprinting lithography is provided to reduce an interval of fabrication time of a nano wire device by forming a pattern only once. An insulation layer(20) is formed on a substrate(10). A nano wire solution including a nano wire(60) is deposited on the insulation layer wherein a plurality of nano wires and an organic solvent can be mixed in the nano wire solution. Photoresist is formed on the resultant structure. The photoresist is stamped by using a nano imprinting stamp having a pattern of a nano size. A metal layer for a metal electrode is deposited on the stamped photoresist. The photoresist remaining on the insulation layer is removed by a lift-off process.

Abstract translation: 提供使用纳米压印光刻制造纳米线器件的方法，通过仅形成一次图案来减少纳米线器件的制造时间的间隔。 绝缘层（20）形成在基板（10）上。 包括纳米线（60）的纳米线溶液沉积在绝缘层上，其中可以在纳米线溶液中混合多根纳米线和有机溶剂。 在所得结构上形成光刻胶。 通过使用具有纳米尺寸图案的纳米压印印模冲压光致抗蚀剂。 用于金属电极的金属层沉积在冲压的光致抗蚀剂上。 通过剥离工艺除去残留在绝缘层上的光致抗蚀剂。

公开(公告)号：KR100799593B1

公开(公告)日：2008-01-30

申请号：KR1020070100796

申请日：2007-10-08

Applicant: 한국전자통신연구원

Inventor： 이효영 ,  이정현 ,  방경숙 ,  서경자

IPC: C07F15/02

CPC classification number: C07F17/02

Abstract: A compound for a molecular electronic device is provided to be adequately applied to embody a fine molecular electronic device in several tens of nanometer level. A molecular electronic device is provided to prevent the short-circuiting phenomenon caused by poor coverage due to having a molecular active layer with excellent coverage. A compound for a molecular electronic device consists of a ferrocene disulfide compound represented by the formula(1), wherein each R1 and R2 is respectively C1-20 saturated or unsaturated hydrocarbon which may be substituted or unsubstituted by F. A method for preparing the compound comprises the steps of: (a) subjecting ferrocene to mono-lithiation using tertiary butyl lithium; (b) reacting the mono-lithiated ferrocene with Br(CH2)mBr(m is an integer from 1 to 20) to synthesize a bromoalkyl ferrocene compound(alkyl is (CH2)m); and (c) preparing a ferrocene disulfide compound having a (CH2)m-S-S-(CH2)nCH3 group from the bromoalkyl ferrocene compound using sodium thiosulfate pentahydrate and alkane thiol(alkane is CH3(CH2)n(n is an integer from 1-19)). A molecular electronic device comprises a first electrode, a second electrode formed on the first electrode, and a molecular active layer which is interposed between the first electrode and the second electrode, and is characterized in that the molecular active layer has a structure of the compound for the molecular electronic device being self-assembled at the first electrode.

Abstract translation: 提供了一种用于分子电子器件的化合物，以适用于体现几十纳米级的细分子电子器件。 提供分子电子器件，以防止由于具有优异覆盖的分子活性层而导致的覆盖不良引起的短路现象。 用于分子电子器件的化合物由式（1）表示的二茂铁二硫化物化合物组成，其中每个R 1和R 2分别为可被F取代或未取代的C 1-20的饱和或不饱和烃。 包括以下步骤：（a）使用叔丁基锂对二茂铁进行单次锂化; （b）使单锂化二茂铁与Br（CH 2）m Br（m是1至20的整数）反应，合成溴烷基二茂铁化合物（烷基是（CH 2）m）; 和（c）使用硫代硫酸五水合物和烷烃硫醇（烷烃为CH 3（CH 2）n（n为1-19的整数），由溴烷基二茂铁化合物制备具有（CH 2）mSS-（CH 2）n CH 3基团的二茂铁二硫化物 ））。 分子电子器件包括第一电极，形成在第一电极上的第二电极和介于第一电极和第二电极之间的分子活性层，其特征在于分子活性层具有化合物的结构 用于分子电子器件在第一电极处被自组装。

公开(公告)号：KR100670835B1

公开(公告)日：2007-01-19

申请号：KR1020060025683

申请日：2006-03-21

Applicant: 한국전자통신연구원

Inventor： 박종혁 ,  이효영 ,  최낙진 ,  이정현 ,  방경숙

IPC: H01L21/027 ,  B82Y40/00

CPC classification number: G03F7/0015 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/2059 ,  H01J37/3174 ,  Y10S977/887

Abstract: A method for fabricating a nano-imprint mold is provided to manufacture a quartz NIL(Nano-Imprint Lithography) mold by using a mold such as a silicon substrate. An E-beam resist is coated on a substrate and an E-beam resist pattern is formed on the first substrate by performing an E-beam lithography process(S200). A photoresist pattern is formed on the first substrate by performing a photo-lithography process(S300). A pattern is formed on the first substrate by using the E-beam resist pattern and the photoresist pattern(S400). A NIL mold is formed by printing the pattern of the first substrate on a second substrate for mold(S500,S600).

Abstract translation: 提供一种制造纳米压印模具的方法，以通过使用诸如硅衬底的模具制造石英NIL（Nano-Imprint Lithography）模具。 电子束抗蚀剂涂覆在基板上，并且通过执行电子束光刻工艺在第一基板上形成电子束抗蚀剂图案（S200）。 通过进行光刻工艺在第一衬底上形成光刻胶图案（S300）。 通过使用电子束抗蚀剂图案和光致抗蚀剂图案在第一基板上形成图案（S400）。 通过将第一基板的图案印刷在第二模具用基板（S500，S600）上而形成NIL模具。

公开(公告)号：KR1020060067783A

公开(公告)日：2006-06-20

申请号：KR1020050004972

申请日：2005-01-19

Applicant: 한국전자통신연구원

Inventor： 이효영 ,  추혜용

IPC: C09K11/06

Abstract: 트리아진 그룹으로 이루어지는 CF 화합물 (PFPT)로 구성되는 유기 화합물층을 포함하는 유기 전계발광 소자에 관하여 개시한다. 본 발명에 따른 유기 전계발광 소자는 2개의 전극과, 이들 사이에 형성된 적어도 하나의 유기 화합물층을 포함하고, 상기 유기 화합물층은 다음 식으로 표시되는 트리아진 유도체 화합물이 도핑되어 있다.

식중, R
1 , R
2 , 및 R
3 는 각각 퍼플루오로페닐렌 (perfluorophenylene) 유도체이다.
퍼플루오로페닐 트리아진, 유기 전계발광 소자, PFPT, 도핑

公开(公告)号：KR1020060032101A

公开(公告)日：2006-04-14

申请号：KR1020040081117

申请日：2004-10-11

Applicant: 한국전자통신연구원

Inventor： 이효영 ,  김도현 ,  도현정

IPC: C07C25/13 ,  C08G73/06 ,  C08J5/22 ,  C07D251/24

CPC classification number: H01L51/0035 ,  C07D251/24 ,  H01L51/0067 ,  H01L51/5048 ,  H01L51/5092

Abstract: 트리아진 그룹을 갖는 유기 반도체 소자용 화합물과, 이를 포함하는 유기 반도체 박막 및 유기 반도체 소자와, 이들의 제조 방법에 관하여 개시한다. 본 발명에 따른 유기 반도체 소자용 화합물은 다음 식으로 표시되는 구조를 가진다.

상기 식에서, R
1 , R
2 , 및 R
3 는 각각 퍼플루오로페닐렌 (perfluorophenylene) 유도체이다.
트리아진, N-형 유기 반도체, 퍼플루오로페닐렌, HOMO, LUMO, 에너지 레벨

公开(公告)号：KR100549227B1

公开(公告)日：2006-02-03

申请号：KR1020030062416

申请日：2003-09-06

Applicant: 한국전자통신연구원

Inventor： 김성진 ,  이효영 ,  정문석 ,  정태형 ,  김도현 ,  이은주

IPC: H01L29/786 ,  B82Y10/00

CPC classification number: H01L51/0595 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/005 ,  H01L51/0579

Abstract: 본 발명은 도전성 유기박막 소자의 제작 방법에 관한 것으로, 희생층을 이용하여 하부전극 상부에 에어브리지형의 상부전극을 형성한 후 희생층을 제거하여 상부전극과 하부전극이 교차하는 부분에 수 나노 메터 두께의 나노 갭을 형성한다. 나노 갭의 상부전극과 하부전극 사이에 도전성 유기분자를 균일하게 흡착시키되, 도전성 유기분자가 흡착되는 동안 상부전극과 하부전극을 통해 흐르는 전류를 관찰하여 도전성 유기분자의 흡착 정도를 확인한다. 따라서 제작 공정의 재현성이 향상되어 표준화된 공정의 채택으로 대량 생산이 용이해진다.
도전성 유기분자, 희생층, 나노 갭, 흡착, 에어브리지형, 상부전극

公开(公告)号：KR1020030008993A

公开(公告)日：2003-01-29

申请号：KR1020010044057

申请日：2001-07-21

Applicant: 한국전자통신연구원

Inventor： 이정익 ,  이효영 ,  오지영 ,  추혜용 ,  도이미 ,  김성현 ,  정태형

IPC: C07F7/30

CPC classification number: C09K11/06 ,  C08G61/02 ,  C08G61/10 ,  H01L51/0039 ,  H01L51/50 ,  Y10S428/917

Abstract: PURPOSE: A spirobifluorene compound, an electro luminescence polymer, and an electro luminescence device containing the same are provided, thereby producing the high quality electro luminescence polymer. CONSTITUTION: The spirobifluorene compound is represented by the formula, wherein R1 and R2 are the same or different each other, and independently linear or branched C1-C22 alkyl or aryl substituted with C1-C22 alkyl, in which at least one of R1 and R2 is selected from the group consisting of O, N, S, Si and Ge; and X is halogen, boron or boron ester. The electro luminescence device comprises a glass board(10), a transparent electrode(12), a buffer layer(14), a luminescence polymer layer(16), an insulating layer(18) and a metal electrode layer(20).

Abstract translation: 目的：提供螺二芴化合物，电致发光聚合物和含有它们的电致发光器件，从而产生高质量的电致发光聚合物。 构成：螺二芴化合物由下式表示，其中R 1和R 2彼此相同或不同，并且独立地为C 1 -C 22烷基取代的直链或支链C 1 -C 22烷基或芳基，其中R 1和R 2中的至少一个 选自O，N，S，Si和Ge; 且X为卤素，硼或硼酸酯。 电致发光器件包括玻璃板（10），透明电极（12），缓冲层（14），发光聚合物层（16），绝缘层（18）和金属电极层（20）。

公开(公告)号：KR1020020051289A

公开(公告)日：2002-06-28

申请号：KR1020000080894

申请日：2000-12-22

Applicant: 한국전자통신연구원

Inventor： 정태형 ,  이효영 ,  김성현 ,  도이미 ,  이정익 ,  추혜용

IPC: G02F1/136

Abstract: PURPOSE: A method of patterning an indium tin oxide layer on a plastic thin film and a rotary coater used for the method are provided to coat photoresist in uniform thickness and prevent undercut generated in the event of wet etching. CONSTITUTION: An ITO layer(11) is formed on a plastic substrate(10), and photoresist is coated on the ITO layer. Heat treatment is performed in order to remove a solvent contained in the coated photoresist. Ultraviolet rays are irradiated on a portion of the ITO layer, which is etched, using a patterned mask. The exposed portion of the photoresist is developed. Heat treatment is carried out to eliminate moisture and solvent left in the photoresist. The ITO layer is dipped in an ITO etchant using the patterned photoresist as a mask to wet-etch the ITO layer. The photoresist used as the mask is stripped.

Abstract translation: 目的：提供在塑料薄膜上形成铟锡氧化物层的方法和用于该方法的旋转涂布机，以均匀的厚度涂覆光致抗蚀剂，并防止在湿蚀刻情况下产生的底切。 构成：在塑料基板（10）上形成ITO层（11），在ITO层上涂布光致抗蚀剂。 进行热处理以除去涂覆的光致抗蚀剂中所含的溶剂。 使用图案化掩模将紫外线照射在蚀刻的ITO层的一部分上。 光刻胶的曝光部分显影。 进行热处理以消除残留在光致抗蚀剂中的水分和溶剂。 使用图案化的光致抗蚀剂作为掩模将ITO层浸入ITO蚀刻剂中以湿蚀刻ITO层。 剥离用作掩模的光致抗蚀剂。