公开(公告)号：US09378309B2

公开(公告)日：2016-06-28

申请号：US14294745

申请日：2014-06-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye

IPC: G06F17/50 ,  G02B19/00 ,  G03F7/20

CPC classification number: G06F17/50 ,  G02B19/0014 ,  G02B19/0028 ,  G02B19/0095 ,  G03F7/705

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract translation: 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。

公开(公告)号：US20150356234A1

公开(公告)日：2015-12-10

申请号：US14822661

申请日：2015-08-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Luoqi CHEN ,  Jun Ye ,  Yu Cao

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

Abstract translation: 本公开涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本公开通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其它方面，本公开允许同时优化源和掩码，从而显着加速整体收敛。 根据另外的方面，本公开允许自由形式优化，而不需要常规优化技术所需的约束。

公开(公告)号：US08893067B2

公开(公告)日：2014-11-18

申请号：US13971381

申请日：2013-08-20

Applicant: ASML Netherlands B.V.

Inventor： Jun Ye ,  Yen-Wen Lu ,  Yu Cao ,  Luoqi Chen ,  Xun Chen

IPC: G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F1/00 ,  G03F7/004 ,  G03F7/705 ,  G03F7/70666 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06T7/0004 ,  G06T2207/30148 ,  G21K5/00

Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract translation: 在一个方面，本发明涉及用于模拟，验证，检查，表征，确定和/或评估光刻设计，技术和/或系统的技术和系统，和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中，本发明是加速光刻特性和/或性质的光刻模拟，检查，表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。

公开(公告)号：US20140195993A1

公开(公告)日：2014-07-10

申请号：US14081386

申请日：2013-11-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng LIU ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

公开(公告)号：US20130232457A1

公开(公告)日：2013-09-05

申请号：US13858795

申请日：2013-04-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao ,  Hanying Feng

IPC: G06F17/50

CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70516

Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

Abstract translation: 一种基于模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的有效的光学和抗蚀剂参数校准的方法。 该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 用于校准光刻过程的系统和方法，由此针对光学系统的标称配置计算多项式拟合，并且其可以用于估计其他配置的关键尺寸。

公开(公告)号：US11544440B2

公开(公告)日：2023-01-03

申请号：US15734141

申请日：2019-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus Aart Van Den Brink ,  Yu Cao ,  Yi Zou

IPC: G06F30/398 ,  G06F30/392 ,  G06F119/18

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

公开(公告)号：US20210018844A1

公开(公告)日：2021-01-21

申请号：US17062251

申请日：2020-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu Cao

IPC: G03F7/20

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

公开(公告)号：US10423075B2

公开(公告)日：2019-09-24

申请号：US14575609

申请日：2014-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Hanying Feng ,  Yu Cao ,  Jun Ye ,  Youping Zhang

IPC: G03F7/20 ,  G06F17/10

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

公开(公告)号：US09746784B2

公开(公告)日：2017-08-29

申请号：US14064937

申请日：2013-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Peng Liu ,  Yu Cao

IPC: G03B27/52 ,  G03B27/68 ,  G03B27/32 ,  G03F7/20 ,  G06F17/50

CPC classification number: G03F7/70441 ,  G03F7/70266 ,  G03F7/705 ,  G03F7/70533 ,  G03F7/706 ,  G03F7/70891 ,  G06F17/50

Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

公开(公告)号：US09372957B2

公开(公告)日：2016-06-21

申请号：US14600337

申请日：2015-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.