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公开(公告)号:JPS61267322A
公开(公告)日:1986-11-26
申请号:JP10843785
申请日:1985-05-22
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI
IPC: G21K1/02 , H01L21/027 , H01L21/30
Abstract: PURPOSE:To enable the X-ray shielding plates to be arrayed at high-precision intervals easily and in a short time by a method wherein, after the X-ray shielding plates and the spacers are alternately laminated, the laminated X-ray shielding plates are mutually fixed at both end parts thereof, then the spacers are removed. CONSTITUTION:X-ray shielding plates 1 and spacers 2 are alternately laminated, and after that, the laminated X-ray shielding plates 1 are mutually fixed at both end parts thereof. By heating the whole sit structure, wherein the spacers are included, obtain in such a manner, the spacers 2 only between the laminated X-ray shielding plates 1 are removed by burning. By this way, the X-ray shielding plates 1 consisting of a metal plate and so forth can be laminatedly arrayed at high-precision intervals easily and in a short time.
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公开(公告)号:JPS60239018A
公开(公告)日:1985-11-27
申请号:JP9289384
申请日:1984-05-11
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI
IPC: G03F7/20 , H01L21/027
Abstract: PURPOSE:To contrive to curtail sharply exposing time to be necessitated for exposure having high resolving power by a method wherein a high resolving power exposure process to expose a pattern having high resolving power, and a subexposure process to project a beam of small quantity on a substance to be exposed are combined. CONSTITUTION:High resolving power exposure to project a beam 1 on a wafer 6 through a mask 3 possessing a mask pattern 4 is performed. A subexposure process to project a beam 2 to a sensitizer 5 by the proper irradiation dose of the irradiation dose D0 or less to be decided according to the sensitizer 5 and development, etc. without passing through the mask 3 is combined to before, after or both of before and after of the process thereof. When the irradiation dose of the sum of the irradiation dose projected by the subexposure process thereof, and the irradiation dose projected by the high resolving power exposure process exceeds the irradiation dose D0, the sensitizer 5 is exposed selectively to the beam not absorbed to the pattern 4, and a fine pattern is formed after development. By using the subexposure process like this together, exposing time can be curtailed sharply.
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公开(公告)号:JP2000272991A
公开(公告)日:2000-10-03
申请号:JP2000012324
申请日:2000-01-20
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI
Abstract: PROBLEM TO BE SOLVED: To provide a device for producing a crystal article, capable of inhibiting the generation and increase of a supercooled region and capable of growing an uniform crystal. SOLUTION: This device for producing a crystal article is provided with a crystal growth oven which has a crucible for receiving a raw material, a heater for melting a raw material received in the crucible and a moving means for relatively moving the crucible to the heater, and is used for cooling the raw material melted in the crucible and thereby growing the crystal. Therein, the improvement comprises detecting the generation of latent heat from the temperature change of the crucible or heater or the change of a heat flow speed, determining the speed of the crystal growth and the position of a solid- liquid interface, and controlling the lowering speed of the crucible or a temperature distribution so that the growth speed is a prescribed value.
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公开(公告)号:JP2000133586A
公开(公告)日:2000-05-12
申请号:JP32143298
申请日:1998-10-27
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI , UZAWA SHUNICHI
IPC: H01L21/027 , B81C1/00 , G03F1/00 , G03F7/00 , G03F7/20
Abstract: PROBLEM TO BE SOLVED: To equalize errors and to improve the accuracy or the degree of resolution by a method, wherein the image of a plurality of mask pattern is exposed in overlap on the same region to be exposed using an X-ray proximity system. SOLUTION: First, a fine pattern is exposed with an exposure 1. Then, a rough pattern having the line width of three periods of the fine pattern is exposed with an exposure 1. As a result, the exposed part of the fine pattern in overlap and the rough pattern is exposed by exposure 2, and the exposed part, where fine pattern only and rough pattern only are exposed, is exposed by exposure 1 and other part is exposed by exposure zero. At this point, an exposure threshold Ds is set between the exposures 1 and 2, and the exposed part only of the fine pattern in overlap and the rough pattern can be developed. As a result, the errors in a plurality of mask patterns can be equalized, or the high degree of resolution part of the transferred image of a plurality of mask patterns are emphasized, and the accuracy of exposure and the degree of resolution can be improved.
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公开(公告)号:JPH07321008A
公开(公告)日:1995-12-08
申请号:JP10969794
申请日:1994-05-24
Applicant: CANON KK
Inventor: HARUMI KAZUYUKI , WATANABE YUTAKA , AMAMIYA MITSUAKI
IPC: G03F7/20 , H01L21/027
Abstract: PURPOSE:To provide a synchrotron aligner of high precision at a low cost. CONSTITUTION:Radiation light from a synchrotron ring 1001 is magnified in the specified direction with a convex mirror 1002, up to the size which can irradiate collectively the region to be exposed. Exposure time is so adjusted that the dose in the exposed region is made constant with a shutter 1003. When the mirror 1002 is slightly vibrated at high speed with a vibration mechanism 1000, fine irregularity of the irradiation light irradiated on the exposure region is practically averaged, and uniform exposure is enabled.
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公开(公告)号:JPH0794568A
公开(公告)日:1995-04-07
申请号:JP23802393
申请日:1993-09-24
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI , WATANABE YUTAKA
IPC: G21K5/02 , H01L21/027 , H01L21/66 , H05H13/04
Abstract: PURPOSE:To provide a method for measuring X-ray spectrum in the vacuum highly accurately. CONSTITUTION:An organic thin film of amorphous structure composed of a light element having atomic number of 11 or below is irradiated with X-ray. Scattered and attenuated X-rays is then measured and the spectra of incident X-ray is determined based on the measurements and the scattering efficiency of the organic thin film. Since the scattering factor of the thin film is difficult to be determined through calculation, comparison is made with a scattering intensity of a gas (e.g. He) having known scattering factor thus determining the scattering efficiency of the organic thin film.
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公开(公告)号:JPH0729811A
公开(公告)日:1995-01-31
申请号:JP17550493
申请日:1993-07-15
Applicant: CANON KK
Inventor: AMAMIYA MITSUAKI , FUJIOKA HIDEHIKO
IPC: G03F7/20 , H01L21/027
Abstract: PURPOSE:To suppress unevenness of exposure by a constitution wherein a plurality of pulse lights expose respective points on a substrate to be exposed and the intensity of light is substantially set at zero at the opposite ends in the scanning direction of the region on a mask irradiated with the pulse light. CONSTITUTION:Pulse light emitted from a laser light source 5 is magnified by means of lenses 6a, 6b before it is projected onto a mask 1 through a filter 8, an aperture 2, and lenses 7a, 7b. A pattern on the mask 1 is projected onto a wafer 3 coated with a photosensitive material through a demagnification projection optical system 4. The filter 8 has such transmissivity distribution as the intensity distribution of flux impinging on the mask 1 substantially approaches zero at the opposite ends thereof in the scanning direction. In the embodiment, the intensity takes the form of Gaussian distribution on the mask 1.
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公开(公告)号:JPH074940A
公开(公告)日:1995-01-10
申请号:JP14201793
申请日:1993-06-14
Applicant: CANON KK
Inventor: MIYAKE AKIRA , AMAMIYA MITSUAKI
Abstract: PURPOSE:To provide a beam-position detection device which can detect a beam position with high accuracy and to provide a system using it. CONSTITUTION:The intensity of a radiant beam 2 which is radiated from a synchrotron ring 1 is measured on the basis of a current which flows in two wires 3a, 3b. On the other hand, the stored current value of the synchrotron ring 1 is measured by a current transformer 5. A beam position can be found precisely on the basis of these measured values.
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49.
公开(公告)号:JPH05152186A
公开(公告)日:1993-06-18
申请号:JP12833492
申请日:1992-04-21
Applicant: CANON KK
Inventor: NOSE TETSUSHI , AMAMIYA MITSUAKI , SAITO KENJI
IPC: G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
Abstract: PURPOSE:To carry out positioning of an exposure apparatus with a high accuracy by detecting a matching state between some of a plurality of alignment patterns of a first object and an alignment pattern of a second object by means of an alignment means, and by measuring a distance between the patterns by means of a length measuring means. CONSTITUTION:A casing 12 relatively movable with respect to a wafer 2 which integrally houses an alignment optical system and a mask 1 is positioned above the wafer 2. A surface spacing measuring instrument 13 for measuring a spacing between a mask 1' and a wafer 2 is disposed in the casing 12 for length measuring purposes having the same marks 1a and 1b as the mask 1. The pattern of the mask 1' is aligned with patterns W1, W2, W3... of the wafer 2 in turn by moving a stage 5 relative to the casing 12 having the mask 1', and the amount of travel of the wafer 5 is successively obtained as an output of a length measuring device 23 when an alignment signal shows a displacement of zero.
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公开(公告)号:JPH0562885A
公开(公告)日:1993-03-12
申请号:JP22288991
申请日:1991-09-03
Applicant: CANON KK
Inventor: MORI MAKIKO , AMAMIYA MITSUAKI , OZAWA KUNITAKA
IPC: G03F7/20 , H01L21/027
Abstract: PURPOSE:To obtain a system in which a protection of a human body, stabilization of a mirror reflectivity for a long period and maintenance are facilitated by providing at least first shielding means for shielding a gamma ray and second shielding means for shielding an X-ray between an SOR ring and a mirror in a beam port. CONSTITUTION:The SOR exposure system comprises an SOR ring 1, at least one exposure unit 2 with an SOR light 4, a beam port 3 for connecting the ring 1 to the unit 2 to guide the light 4, and an X-ray reflecting mirror 9 provided in the port 3 to enlarge the light 4 in a vertical direction. In such an SOR exposure system, at least first shielding means 5 for shielding a gamma ray and second shielding means 8 for shielding an X-ray are provided between the ring 1 and the mirror 9 in the port 3. Further, exposure amount regulating means 11 for controlling an exposure amount when a circuit pattern on a mask 12 is transferred to a wafer 13 is provided between the mirror 9 and the wafer 13.
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