公开(公告)号：JPH09219359A

公开(公告)日：1997-08-19

申请号：JP4687596

申请日：1996-02-09

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI ,  TANAKA YUTAKA

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the productivity of a semiconductor wafer, by improving the aligning and transfering accuracies between the semiconductor wafer and its mask in the case of exposuring. SOLUTION: This apparatus comprises a mask 1 having an absorption material pattern on its mask membrane, a measurement means for measuring the interval between the mask 1 and a semiconductor wafer 5, an adjustment means for adjusting the interval between the mask 1 and the wafer 5 and a drive means for moving the foregoing mask pattern in a stepping way to a plurality of portions of the wafer 5 to expose a plurality of foregoing mask patterns at very fine spaces onto the wafer 5. In this case, on the basis of the information of the foregoing measurement means, adjusting by the foregoing adjustment means the interval between the mask 1 and wafer 5, the foregoing mask pattern is moved in a stepping way.

公开(公告)号：JPH0926176A

公开(公告)日：1997-01-28

申请号：JP17206695

申请日：1995-07-07

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI ,  FUJIOKA HIDEHIKO ,  YONEYAMA YOSHITO

IPC: F24F7/06 ,  H01L21/00 ,  H01L21/02 ,  H01L21/677

Abstract: PROBLEM TO BE SOLVED: To curtail equipment costs and a running cost by monitoring the operating condition of treating devices to adjust the condition of a clean room locally according to the results of the monitoring. SOLUTION: Particle detectors 9a-9c measure the cleanness of a clean room 2 by counting foreign particles such as dirt or dust in air. A main controller monitors the operating condition of an exposer 3, a coater developer 4, measured vales of the particle detectors 9a-9c and the like to control the ventilation capacities of fan filter units 7a-7e, cooling capacities of cooling coils 8a-8e and the operation sequence of treating devices (e.g. thermal treatment devices, sputtering devices, CVD devices, epitaxial devices, diffusers, annealing devices and inspecting instruments). This enables managing of the condition of a necessary location at a necessary timing extensively at a high level.

公开(公告)号：JPH08264404A

公开(公告)日：1996-10-11

申请号：JP6961195

申请日：1995-03-28

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI ,  FUJIOKA HIDEHIKO ,  YONEYAMA YOSHITO

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/02

Abstract: PURPOSE: To provide a process system whose running cost in low by increasing utility efficiency of an atmosphere gas such as helium, etc. CONSTITUTION: This system comprises: a first process chamber 101 for light- exposure; and a second process chamber 130 for resist-applying and developing. Atmosphere gas used in the first process chamber 101 is introduced into the second process chamber and reused. The atmosphere gas used in the second process chamber 130 is circulated again in the first process chamber 101. At least a part of the atmosphere gas circulated is refined in a gas refiner 112a to increase the purity.

公开(公告)号：JPH05198480A

公开(公告)日：1993-08-06

申请号：JP3144492

申请日：1992-01-22

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  EBINUMA RYUICHI ,  HASEGAWA TAKAYUKI

IPC: G03F7/20 ,  G21K5/02 ,  H01L21/027

Abstract: PURPOSE:To detect the position of X-rays such as synchrotron radiation with high accuracy without being subjected to the effect of the attenuation of the X-rays. CONSTITUTION:An X-ray intensity sensor 2a and an X-ray intensity sensor 2b for correction are mounted on the optical path of synchrotron radiation (SR-X-rays) S. The light-receiving surfaces of both sensors have the same dimensions, and have width sufficient for receiving SR-X-rays S extending over overall width in the direction (the direction of a y-axis) vertical to the orbital face of a charge-particle storage ring as the light source of the SR-X- rays S. A shutter 3 adjacent to the X-ray intensity sensor 2a is moved in the direction of the y-axis, thus reducing the SR-X-rays incident on the X-ray intensity sensor 2a. The reflecting surface 4a of a mirror 4 is positioned while using the position of the edge 3a of the shutter 3 as the position of the SR-X-rays S at a time when the ratio of an output from the X-ray intensity sensor 2a to an output from the X-ray intensity sensor 2b for correction becomes 1/2.

公开(公告)号：JPH05100098A

公开(公告)日：1993-04-23

申请号：JP28362791

申请日：1991-10-03

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  EBINUMA RYUICHI ,  HASEGAWA TAKAYUKI

IPC: G21K1/06 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027 ,  H05H13/04

Abstract: PURPOSE:To prevent the illuminance irregularity by detecting and resolving the relative displacement between the optical path of X-rays in an SR-X-ray exposure and the reflecting surface of a mirror. CONSTITUTION:When the optical path of X-rays in an X-ray exposure is moved in the Y-axis direction, it is detected by an X-ray position sensor 112, the mirror supporter 106 of a mirror 101 expanding the X-rays is moved along a Y-direct acting guide 203 by a Y-drive motor 110, and the relative displacement between the reflecting surface of the mirror 101 and the optical path of the X-rays is resolved. A cooling means is provided on the mirror supporter 106 and the Y-direct acting guide 203, and the deterioration of precision due to the heat transfer from the Y-drive motor 110 is prevented.

公开(公告)号：JPH05100094A

公开(公告)日：1993-04-23

申请号：JP28927491

申请日：1991-10-08

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  EBINUMA RYUICHI ,  HASEGAWA TAKAYUKI

IPC: G21K1/06 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027 ,  H05H13/04

Abstract: PURPOSE:To effectively utilize the whole width of the reflecting surface of a mirror by moving the mirror in the direction crossing the optical path of X-rays together with a vacuum chamber. CONSTITUTION:A large frame 401 supporting a mirror 101 and a vacuum chamber 105 is moved by an X-feed screw in the direction crossing the optical path of SR-X-rays along X-guide rails 502a, 502b of an upper rack 501. A mirror support device supporting the mirror 101 is supported by the top section of the large frame 401 and moved together with the mirror 101 and the vacuum chamber 105. A beam duct of the SR-X-rays is connected to the opening of the vacuum chamber 105 via beam connecting bellows 111a, 111b. A fitting flange 113 of the beam connecting bellows 111a, 111b can be exchanged with an eccentric flange.

公开(公告)号：JPH0590134A

公开(公告)日：1993-04-09

申请号：JP27837391

申请日：1991-09-30

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  EBINUMA RYUICHI ,  HASEGAWA TAKAYUKI

IPC: G21K1/06 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To make the exposure amount of a wafer uniform, by positioning a mirror for magnifying an SR-X ray, with high precision. CONSTITUTION:A mirror 101 is held by a mirror retaining rod 104, which is supported by a mirror retaining equipment A installed outside a vacuum chamber 105. The mirror retaining equipment A and the vacuum chamber 105 are retained in the mutually independent state by a large frame 401. The mirror retaining equipment A consists in a reference frame 301 capable of pivotary movement around the z-axis, a tilt board 201 capable of pivotary movement adjustment around the z-axis and the x-axis, and a mirror retainer 106 capable of reciprocal movement in the y-axis direction. A pedestal structure body B which retains the large frame 401 consists in a pedestal seat 601 capable of inclination in the arbitrary direction, and a pedestal top 501 capable of pivotal movement around the y-axis.