PANEL PROCESS MONITOR STRUCTURE AND PANEL PROCESS MONITORING METHOD

    公开(公告)号:JP2000251734A

    公开(公告)日:2000-09-14

    申请号:JP4716899

    申请日:1999-02-24

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To detect temperature and atmospheric conditions accurately and efficiently. SOLUTION: This panel display monitor structure is installed to assay parameters for manufacturing conditions of a manufacturing process of a flat display panel 2 and constituted by forming a material 12 having sensitivity to a process environment comprising temperature and atmosphere into a fine particle layer in on a base substance 11.

    ELECTRON EMISSION ELEMENT, ELECTRON SOURCE, AND IMAGE FORMING DEVICE

    公开(公告)号:JPH1055748A

    公开(公告)日:1998-02-24

    申请号:JP15420697

    申请日:1997-06-12

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To enable an electron emission quantity to be changed and extend longer service life by providing plural electrodes with their different electric characteristics respectively capable of applying voltage between two electrodes independently from the outside and switching the electrodes. SOLUTION: After a lift-off resist is formed on a well washed glass substrate 1 by photolithography technique, electrodes 3, 4, 171, 172, and 173 with their specified intervals are formed by vacuum evaporation. The electrodes 171, 172, and 173 connected in parallel to between the electrodes 3 and 4 makes it possible to apply voltage independently from the outside. Next, a part forming a fine particle membrane 5 remains on an electrode substrate 1, and a Cr film is vacuum-evaporated fully. Further, organic solvent containing organic paradium is applied and sintered thereon, and plural fine particle membranes 5 composed of pd fine particles is formed between the electrodes 3 and 4. Finally, the Cr film is removed by etching, and the electron emission element is completed. Thus, the width of each fine particle membrane 5 is changed, electron characteristics are changed, and by which the electron emission quantity can be changed stepwise.

    ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, IMAGE FORMING DEVICE USING THE SAME, AND THEIR MANUFACTURE

    公开(公告)号:JPH0927273A

    公开(公告)日:1997-01-28

    申请号:JP19796895

    申请日:1995-07-12

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To reduce the influence on element component members and on electron emission characteristics by heat generation during current-carrying forming process so as to achieve high reliability of an electron emission element by forming an electron emitting part through a reverse piezoelectric effect on a conductive film. SOLUTION: A piezoelectric element 6 consisting of a piezoelectric electrode 7 and a piezoelectric layer 8 is formed over a substrate 1, element electrodes 4, 5 are provided on the piezoelectric element 6, and a conductive film 3 is formed between the electrodes 4, 5. In current-passing forming, a current is passed between the electrodes 4, 5 and a voltage is applied to the piezoelectric electrode 7 to destroy, deform, or denature the conductive film 3 locally to form an electron emitting part 2. Deflection of the conductive film 3 caused by a reverse piezoelectric effect promotes the local destruction, deformation, or denaturing to reduce the amount of heat during the current-passing forming so as to reduce the influence of the heat on the component members of the element and on electron emission characteristics. Also, the power consumption and the processing time required for the formation of the electron emitting part can both be reduced greatly.

    METHOD OF MANUFACTURING FLUORITE CRYSTAL
    46.
    发明专利

    公开(公告)号:JP2003238292A

    公开(公告)日:2003-08-27

    申请号:JP2002037043

    申请日:2002-02-14

    Applicant: CANON KK

    Inventor: NOMA TAKASHI

    Abstract: PROBLEM TO BE SOLVED: To provide fluorite which is suitable as an optical component for excimer laser of an exposure device for photolithography. SOLUTION: A method of manufacturing a fluorite crystal comprises a step for melting calcium fluoride in a crucible and then solidifying the resulting melt, and includes a step for growing the fluorite single crystal from the lower end of the melt in the crucible, and a step for subsequently depositing fluorite polycrystal from the melt. Further, in the method of manufacturing the fluorite crystal, a step for analyzing the concentration of an impurity in a part of the fluorite polycrystal and judging from the analyzed value whether the quality of the formed fluorite single crystal is good or not. COPYRIGHT: (C)2003,JPO

    SAMPLE HOLDER FOR OBLIQUELY INCIDENT X-RAY DIFFRACTION AND APPARATUS AND METHOD FOR MEASURING OBLIQUELY INCIDENT X-RAY DIFFRACTION USING THE SAME

    公开(公告)号:JP2001147207A

    公开(公告)日:2001-05-29

    申请号:JP33005199

    申请日:1999-11-19

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To easily set a membrane sample to a sample holder for diffracting obliquely incident X-rays in a case measuring the diffraction of obliquely incident X-rays of the membrane sample and to reduce the effect of scattered X-rays due to the constituent member of the sample holder for diffracting obliquely incident X-rays. SOLUTION: Sample support members 4, each of which is arranged so as to cover a part of an aperture part 2 through the end surface A provided on the same plane as a measuring reference surface 3 and holds a sample 1 so that the measuring surface of the sample 1 coincides with a measuring reference sample 3, are provided to a sample holder substrate 14, which has an aperture part 2 and the measuring reference surface 3 formed thereto, within a range wherein the relation of the thickness T of an end surface B in primary X-rays 5 with the distance L from the end surface B to the center of the irradiation region of primary X-rays 5 in the sample 1, the maximum incident angle ωm of primary X-rays 5 and the width W of the irradiation region of primary X-rays 5 in the end surface becomes T>W/2+L+Tanωm and primary X-rays 5 applied to the part other than the measuring surface of the sample 1 is shielded by the end surface B.

    X-RAY DIFFRACTION APPARATUS
    48.
    发明专利

    公开(公告)号:JP2000275192A

    公开(公告)日:2000-10-06

    申请号:JP8173999

    申请日:1999-03-25

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To arbitrarily set resolving power in the measurement of the diffraction pattern of diffracted X-rays generated when a sample is irradiated with X-rays. SOLUTION: In the X-ray diffraction apparatus, a sample 3 is held on a goniometer 12 having a sample rotating mechanism and the incident angle ωof primary X-ray 4 from an X-ray source 7 is regulated by the sample rotating mechanism. A position-sensitive type proportion counter 6 is provided in order to measure the emitting angle α of diffracted/scattered X-rays 5 from the sample 3 to be arranged on a rectilinear stage 11 movable in a Tx-direction and a Ty-direction and changes in its resolving power corresponding to the distance L with the sample 3.

    METHOD AND APPARATUS FOR MEASURING X-RAY STRESS

    公开(公告)号:JP2000275113A

    公开(公告)日:2000-10-06

    申请号:JP8173899

    申请日:1999-03-25

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To accurately measure an internal stress near the surface of a sample or a thin film state sample by excluding an effect of a refraction of an X-ray on the surface of the sample. SOLUTION: In the method for measuring an X-ray stress, a sample 3 is held on a sample rotating mechanism 21, and hence an incident angle α of a primary X-ray 4 from an X-ray source 9 is set to 5 deg. or below. A diffraction X-ray 5 diffraction at the sample 3 is measured in its intensity by an X-ray detector 6. A calculator 19 detects a diffraction angle θ from an intensity distribution of the diffraction X-ray 5 measured by the detector 6, the diffraction angle when no influence of refraction of X-ray exists from the data of the angles α, θ is obtained, and an internal stress of the sample 3 is calculated base on the diffraction angle.

    X-RAY REFLECTANCE MEASURING METHOD, AND DEVICE THEREOF

    公开(公告)号:JPH11337507A

    公开(公告)日:1999-12-10

    申请号:JP14145298

    申请日:1998-05-22

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To provide an X-ray reflectance measuring device, which can evaluate the structure in a micro-area of a test sample when the surface of the test sample is irradiated with X-ray and a reflectance of X-ray reflected on the surface of the test sample is measured to evaluate the structure of the test sample. SOLUTION: A crystalline 2 consisting of powder whose particle diameters are uniform is sprayed on the surface of a measured test sample 1. An X-ray from an X-ray generating device 3 arranged on the surface side of the measured test sample 1 is cast on the crystalline 2 via a collimator 4 comprising slits 4a and 4b. The X-ray cast on the crystalline 2 is diffracted by the crystalline 2 and is made incident on the surface of the measured test sample 1 at a small angle with respect to the surface of the measured test sample 1 to make total reflection on the surface of the measured test sample 1. The X-ray diffracted by the crystalline 2 is made incident on the measured test sample 1 thus, the width of an X-ray irradiated area on the surface of the measured test sample 1 is lessened. The X-ray reflected on the surface of the measured test sample 1 passes through a slit 7 and a monochromator 6 and an X-ray detector detects the X-ray.

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