公开(公告)号：EP3053181B1

公开(公告)日：2018-04-18

申请号：EP14781789.4

申请日：2014-09-24

Applicant: Cavendish Kinetics, Inc.

Inventor： RENAULT, Mickael ,  JOSHI, Vikram ,  VAN KAMPEN, Robertus Petrus ,  MAGUIRE, Thomas L. ,  KNIPE, Richard L.

IPC: H01H59/00 ,  H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00166 ,  B81C2201/0104 ,  B81C2201/0109 ,  H01G5/011 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.

公开(公告)号：EP2862187B1

公开(公告)日：2017-07-26

申请号：EP13732034.7

申请日：2013-06-13

Applicant: Cavendish Kinetics Inc.

Inventor： KHIEU, Cong Quoc ,  JOSHI, Vikram ,  KNIPE, Richard L.

IPC: B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01L27/085 ,  H01H59/00

CPC classification number: H01G5/16 ,  B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

公开(公告)号：EP2699512B1

公开(公告)日：2016-05-25

申请号：EP12719162.5

申请日：2012-04-19

Applicant: Cavendish Kinetics Inc.

Inventor： VAN DEN HOEK, Willibrordus Gerardus Maria ,  VAN KAMPEN, Robertus Petrus ,  KNIPE, Richard L. ,  SMITH, Charles G.

IPC: B81C1/00

CPC classification number: H01L29/84 ,  B81B3/0059 ,  B81B7/0035 ,  B81B2203/0127 ,  B81C1/00285 ,  B81C1/00293 ,  B81C1/00682

公开(公告)号：EP2862187A1

公开(公告)日：2015-04-22

申请号：EP13732034.7

申请日：2013-06-13

Applicant: Cavendish Kinetics Inc.

Inventor： KHIEU, Cong Quoc ,  JOSHI, Vikram ,  KNIPE, Richard L.

IPC: H01G5/18 ,  H01G5/38 ,  H01H59/00 ,  H01L27/085

CPC classification number: H01G5/16 ,  B81B7/02 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.

公开(公告)号：EP2751817A1

公开(公告)日：2014-07-09

申请号：EP12828150.8

申请日：2012-09-04

Applicant: Cavendish Kinetics Inc.

Inventor： VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  NAGATA, Toshiyuki

IPC: H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0051 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00523 ,  H01G5/18

Abstract: In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.

公开(公告)号：EP2619780A1

公开(公告)日：2013-07-31

申请号：EP11770225.8

申请日：2011-09-19

Applicant: Cavendish Kinetics Inc.

Inventor： KNIPE, Richard L. ,  VAN KAMPEN, Robertus Petrus ,  UNAMUNO, Anartz ,  GADDI, Roberto

IPC: H01H1/00 ,  H01H59/00

CPC classification number: H01H1/0036 ,  H01H59/0009 ,  H01H2001/0084

Abstract: The present invention generally relates to MEMS devices and methods for their manufacture. The cantilever of the MEMS device may have a waffle-type microstructure. The waffle-type microstructure utilizes the support beams to impart stiffness to the microstructure while permitting the support beam to flex. The waffle-type microstructure permits design of rigid structures in combination with flexible supports. Additionally, compound springs may be used to create very stiff springs to improve hot-switch performance of MEMS devices. To permit the MEMS devices to utilize higher RF voltages, a pull up electrode may be positioned above the cantilever to help pull the cantilever away from the contact electrode.

公开(公告)号：EP2484001A2

公开(公告)日：2012-08-08

申请号：EP10771237.4

申请日：2010-10-01

Applicant: Cavendish Kinetics Inc.

Inventor： KNIPE, Richard L. ,  VAN KAMPEN, Robertus P. ,  UNAMUNO, Anartz

IPC: H02N1/00

CPC classification number: H01H59/0009 ,  H01G5/18

Abstract: The present invention generally relates to RF MEMS devices that are capable of hot switching. The RF MEMS devices, by utilizing one or more spring mechanisms, are capable of hot switching. In certain embodiments, two or more sets of springs may be used that become engaged at specific points in the displacement of the cantilever of the MEMS device. The springs allow for a significant increase in the release voltage for a given pull in landing voltage.

公开(公告)号：EP2344416A2

公开(公告)日：2011-07-20

申请号：EP09749300.1

申请日：2009-11-06

Applicant: Cavendish Kinetics Inc.

Inventor： SMITH, Charles Gordon ,  KNIPE, Richard L. ,  JOSHI, Vikram ,  GADDI, Roberto ,  UNAMUNO, Anartz ,  VAN KAMPEN, Robertus Petrus

IPC: B81C1/00

Abstract: Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.