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公开(公告)号：AT427367T
公开(公告)日：2009-04-15
申请号：AT03756536
申请日：2003-08-07
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , ROISIN PHILIPPE , BOSMANS RICHARD
Abstract: The method according to the invention comprises forming on a SiO x F y layer a silica SiO 2 and/or metal oxide protective layer obtained through ion beam-assisted vapor phase deposition, comprising bombarding the layer being formed with a beam of positive ions formed from a rare gas, oxygen or a mixture of two or more of such gases, or through cathodic sputtering of a silicon or metal layer followed by an oxidation step of the silicon or the metal layer. Application to the production of antireflection coatings.
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公开(公告)号：FR2917510A1
公开(公告)日：2008-12-19
申请号：FR0755749
申请日：2007-06-13
Applicant: ESSILOR INT
Inventor： NOUVELOT LUC , ROTTE JOHANN , SCHERER KARIN , VALLET DANIEL
IPC: G02B1/11
Abstract: L'invention concerne un article d'optique à propriétés antireflet, comprenant un substrat ayant au moins une surface principale revêtue d'un revêtement antireflet comprenant, en partant du substrat :- une sous-couche comprenant deux couches adjacentes formées du même matériau, la somme des épaisseurs de ces deux couches adjacentes étant supérieure ou égale à 75 nm ; et- un empilement antireflet multicouche comprenant au moins une couche de haut indice de réfraction et au moins une couche de bas indice de réfraction,le dépôt de la première desdites deux couches adjacentes de la sous-couche ayant été réalisé sans assistance ionique et le dépôt de la deuxième desdites deux couches adjacentes de la sous-couche ayant été réalisé sous assistance ionique.L'invention concerne également un procédé de fabrication d'un tel article d'optique.
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公开(公告)号：AT414185T
公开(公告)日：2008-11-15
申请号：AT04787278
申请日：2004-09-01
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , BOSMANS RICHARD
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Patent Agency Ranking
公开(公告)号：FR2859485B1
公开(公告)日：2006-09-15
申请号：FR0310473
申请日：2003-09-04
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , BOSMANS RICHARD
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公开(公告)号：AU2003285355A1
公开(公告)日：2004-03-03
申请号：AU2003285355
申请日：2003-08-07
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , ROISIN PHILIPPE , BOSMANS RICHARD
Abstract: The method according to the invention comprises forming on a SiO x F y layer a silica SiO 2 and/or metal oxide protective layer obtained through ion beam-assisted vapor phase deposition, comprising bombarding the layer being formed with a beam of positive ions formed from a rare gas, oxygen or a mixture of two or more of such gases, or through cathodic sputtering of a silicon or metal layer followed by an oxidation step of the silicon or the metal layer. Application to the production of antireflection coatings.
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公开(公告)号：FR2812664B1
公开(公告)日：2002-11-08
申请号：FR0010149
申请日：2000-08-01
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , BOSMANS RICHARD
IPC: G02B1/11 , C23C14/06 , C23C14/10 , C23C14/22 , C23C14/46 , C23C14/48 , C23C14/58 , C23C14/24 , G02B1/12
Abstract: The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films.
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公开(公告)号：AU8409001A
公开(公告)日：2002-02-13
申请号：AU8409001
申请日：2001-07-31
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , BOSMANS RICHARD
Abstract: The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films.
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公开(公告)号：FR2812664A1
公开(公告)日：2002-02-08
申请号：FR0010149
申请日：2000-08-01
Applicant: ESSILOR INT
Inventor： SCHERER KARIN , LACAN PASCALE , BOSMANS RICHARD
IPC: G02B1/11 , C23C14/06 , C23C14/10 , C23C14/22 , C23C14/46 , C23C14/48 , C23C14/58 , C23C14/24 , G02B1/12
Abstract: The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films.
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