公开(公告)号：EP2755235A4

公开(公告)日：2015-05-20

申请号：EP12830624

申请日：2012-06-19

Applicant: HAMAMATSU PHOTONICS KK

Inventor： IKEYA TOMOHIRO ,  FUKUI TOSHIYUKI ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

IPC: H01L27/146 ,  H01L23/00 ,  H04N5/369

CPC classification number: H01L27/14636 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/14618 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05555 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06135 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/16195 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP2403009A4

公开(公告)日：2013-03-27

申请号：EP10746082

申请日：2010-02-09

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  MIYAZAKI YASUHITO ,  YONETA YASUHITO ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

IPC: H01L31/10 ,  H01L27/144 ,  H01L31/0236

CPC classification number: H01L31/0236 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/103 ,  Y02E10/50

Abstract: A semiconductor photodetection element SP has a silicon substrate 21 comprised of a semiconductor of a first conductivity type, having a first principal surface 21a and a second principal surface 21b opposed to each other, and having a semiconductor layer 23 of a second conductivity type formed on the first principal surface 21a side; and charge transfer electrodes 25 provided on the first principal surface 21a and adapted to transfer generated charge. In the silicon substrate 21, an accumulation layer 31 of the first conductivity type having a higher impurity concentration than the silicon substrate 21 is formed on the second principal surface 21b side and an irregular asperity 10 is formed in a region opposed to at least the semiconductor region 23, in the second principal surface 21b. The region where the irregular asperity 10 is formed in the second principal surface 21b of the silicon substrate 21 is optically exposed.

公开(公告)号：EP2393282A4

公开(公告)日：2012-09-19

申请号：EP10735746

申请日：2010-01-22

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  TAKAGI SHIN-ICHIRO ,  MAETA KENTARO ,  MURAMATSU MASAHARU

IPC: H04N5/335 ,  H01L27/148 ,  H01L29/768 ,  H04N5/341 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3725 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/14806 ,  H01L29/76816

Abstract: A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each or the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.

Abstract translation: 根据一个实施例的固态成像装置是多端口固态成像装置，并且包括成像区域和多个单元。 成像区域包括多个像素列。 这些单元基于来自成像区域的电荷产生信号。 每个或各单元具有输出寄存器，多个乘法寄存器和放大器。 输出寄存器从多个像素列中的一个或多个对应的像素列传送电荷。 乘法寄存器并行提供，并从输出寄存器接收电荷，以分别产生相乘电荷。 放大器基于来自乘法寄存器的相乘电荷产生信号。

公开(公告)号：EP2043153A4

公开(公告)日：2012-08-15

申请号：EP07768243

申请日：2007-07-05

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YONETA YASUHITO ,  SUZUKI HISANORI ,  KOBAYASHI HIROYA ,  MURAMATSU MASAHARU

IPC: H01L27/146 ,  H05K1/02 ,  H05K1/11

CPC classification number: H01L27/14618 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/15192 ,  H05K1/0269 ,  H05K1/0295 ,  H05K1/112 ,  H05K2201/09254 ,  H05K2201/09918 ,  H05K2201/09954 ,  H05K2201/10674 ,  H05K2203/049 ,  H05K2203/166 ,  H01L2924/00014 ,  H01L2924/00012

公开(公告)号：EP2256811A4

公开(公告)日：2011-03-30

申请号：EP10735838

申请日：2010-01-27

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  TAKAGI SHIN-ICHIRO ,  MAETA KENTARO ,  MURAMATSU MASAHARU

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC classification number: H01L27/1485 ,  H01L27/1464 ,  H01L27/14843 ,  H04N5/335 ,  H04N5/37213

Abstract: A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.

公开(公告)号：EP2247099A4

公开(公告)日：2011-03-23

申请号：EP10735747

申请日：2010-01-22

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  TAKAGI SHIN-ICHIRO ,  MAETA KENTARO ,  MURAMATSU MASAHARU

IPC: H04N5/335 ,  H01L27/148 ,  H04N5/341 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3728

CPC classification number: H01L29/76816 ,  H01L27/14806 ,  H04N5/3653 ,  H04N5/37213 ,  H04N5/378

Abstract: A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided.

公开(公告)号：EP2975840A4

公开(公告)日：2016-08-10

申请号：EP14765033

申请日：2014-02-18

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OTSUKA SHINYA ,  SUZUKI HISANORI ,  MURAMATSU MASAHARU

IPC: H04N5/372 ,  H01L27/148 ,  H04N5/341 ,  H04N5/378

CPC classification number: H04N5/372 ,  H01L27/14812 ,  H04N5/37213 ,  H04N5/3725 ,  H04N5/378

Abstract: A solid-state imaging device 1 includes photoelectric converting sections 11, 12, transfer sections 21, 22, first buffer sections 31, 32, second buffer sections 51, 52, first output sections 40, and second output sections 60. The photoelectric converting sections 11, 12 generate electric charges in response to incidence of light. The transfer sections 21, 22 transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections 31, 32 and the second buffer sections 51, 52 acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections 21, 22 and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections 40 and the second output sections 60 acquire the electric charges transferred from the first buffer sections 31, 32 and from the second buffer sections 51, 52, respectively, and output signals according to the acquired electric charges.

公开(公告)号：EP2416362A4

公开(公告)日：2015-03-25

申请号：EP10758533

申请日：2010-03-25

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  MAETA KENTARO ,  MURAMATSU MASAHARU

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372

CPC classification number: H04N5/37206 ,  H01L27/14831 ,  H01L27/14856 ,  H01L27/14887 ,  H01L31/113 ,  H04N5/3592

Abstract: In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16, to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V1 to V5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

公开(公告)号：EP2284898A4

公开(公告)日：2014-04-30

申请号：EP09738736

申请日：2009-04-22

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  OTSUKA SHINYA ,  MURAMATSU MASAHARU

IPC: H01L27/148 ,  G01J1/02 ,  G01J1/44 ,  H04N5/372

CPC classification number: H01L27/14831 ,  H01L27/14825 ,  H04N5/37213

Abstract: A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.

公开(公告)号：EP2413362A4

公开(公告)日：2013-05-01

申请号：EP10756113

申请日：2010-03-24

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  MIYAZAKI YASUHITO ,  MURAMATSU MASAHARU ,  YAMAMOTO KOEI

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14806 ,  H01L31/02363 ,  H01L31/035281

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.