公开(公告)号：JP2004171034A

公开(公告)日：2004-06-17

申请号：JP2004082596

申请日：2004-03-22

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： OKUBO AKIRA ,  MITSUI HIDEAKI

IPC: G03F1/24 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide an etching stopper material and an etching mask material which makes a high selectivity etching to a silicon compound material possible to be performed.
SOLUTION: In the case where the layered article has at least: an upper layer which is to be dry etched by using a fluorine-based gas; and a lower layer which is formed between the upper layer and a transparent substrate and durable against the above fluorine gas and which can be dry etched by using a different gas from the above fluorine gas, the layered article is characterized in that the material of the lower layer consists of a single metal selected from the first group comprising Al, Ga, Hg, Ti, V and Zr.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003322959A

公开(公告)日：2003-11-14

申请号：JP2002127470

申请日：2002-04-26

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： MITSUI HIDEAKI ,  SHIODA YUUKI

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/60 ,  G03F1/68 ,  H01L21/027 ,  G03F1/14 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a halftone phase shifting mask blank capable of effectively lowering the transmittance of a phase adjusting layer particularly in the wavelength range of 240-650 nm while suppressing lowering of transmittance at exposure wavelength to a minimum. SOLUTION: In the halftone phase shifting mask blank, a phase shifter portion has at least one transmittance adjusting layer having a function to chiefly control the transmittance of exposure light, and at least one phase adjusting layer which chiefly controls the phase of exposure light, wherein the phase adjusting layer comprises a material containing at least carbon. COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种能够有效地降低相位调整层的透射率的半色调相移掩模坯料的制造方法，特别是在240-650nm的波长范围内，同时抑制曝光波长的透射率降低至 最低限度。 解决方案：在半色调相移掩模空白中，移相器部分具有至少一个透光率调节层，其具有主要控制曝光光的透射率的功能，以及至少一个主要控制曝光阶段的相位调整层 光，其中相调节层包含至少含有碳的材料。 版权所有（C）2004，JPO

公开(公告)号：JP2003322955A

公开(公告)日：2003-11-14

申请号：JP2002127449

申请日：2002-04-26

Applicant: Hoya Corp ,  Hoya株式会社

Inventor： NOZAWA JUN ,  SHIODA YUUKI ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a lithography mask blank capable of improving electric discharge stability in film deposition and stability of film deposition and capable of suppressing generation of particles. SOLUTION: In the method for producing a lithography mask blank including a step of depositing a thin film comprising at least silicon on a transparent substrate by DC sputtering, a silicon target having ≤0.1 Ω.cm specific resistance is used in the step. COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种能够提高成膜时的放电稳定性和膜沉积稳定性并能够抑制粒子产生的光刻掩模坯料的制造方法。 解决方案：在用于制造光刻掩模坯料的方法中，包括通过DC溅射在透明基板上沉积至少包含硅的薄膜的步骤，在步骤中使用具有≤0.1Ω.cm的电阻率的硅靶 。 版权所有（C）2004，JPO

公开(公告)号：JP2003248292A

公开(公告)日：2003-09-05

申请号：JP2002047051

申请日：2002-02-22

Applicant: HOYA CORP

Inventor： OKUBO AKIRA ,  MITSUI HIDEAKI

IPC: G03F1/24 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide an etching stopper material and etching mask material which can etch a silicon compound material with a high selection ratio. SOLUTION: The phase shifter films have at least an upper layer to be subjected to etching by using dry etching using gaseous fluorine, and a lower layer etchable by using dry etching using gas having a resistance to the gaseous fluorine and different from the gaseous fluorine, in which case the material of the lower layer consists of metal alone selected from the first group consisting of, for example, Al, Ga, Hf, Ti, V, and Zr. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002296758A

公开(公告)日：2002-10-09

申请号：JP2001101754

申请日：2001-03-30

Applicant: HOYA CORP

Inventor： SHIODA YUUKI ,  NOZAWA JUN ,  MITSUI HIDEAKI

IPC: G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask which has light transmittance usable also in near 157 nm being the wavelength of an F2 excimer laser, and can suppress reflectance to exposure light necessary to improve the accuracy in a real exposure process, and to provide a blank or the like. SOLUTION: A phase shifter film is composed of a film consisting of four or more layers in which high refractive index layers with a function to mainly adjust the transmittance and low refractive index layers with a function to mainly adjust a phase shift amount are stacked alternately, and at least one layer of low refractive index layers is designed so as to have an antireflection function at least to exposure light.

公开(公告)号：JP2000003029A

公开(公告)日：2000-01-07

申请号：JP18331898

申请日：1998-06-15

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  TAKEUCHI MEGUMI ,  NOZAWA JUN

IPC: G03F1/32 ,  G03F1/54 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of photomask which can deal with requirement for a high accuracy and large sized photomask and which reduces influences on the global environment. SOLUTION: A reversal pattern 5a in a positive-negative reversal relation to the desired mask pattern as a finish product is formed on a substrate which is transparent with respect to desired exposure light (d). Then, a thin film 2 of a material to be formed into the desired mask pattern is deposited on the substrate with the reversal pattern (e). The thin film layer is removed to expose the reversal pattern 5a under the thin film layer (f). The reversal pattern 5a exposed is selectively removed to leave the mask pattern 2a (g). Thus, the photomask having the mask pattern 2a consisting of the desired material is produced.

公开(公告)号：JPH11237727A

公开(公告)日：1999-08-31

申请号：JP34743598

申请日：1998-12-07

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  MATSUMOTO KENJI ,  YAMAGUCHI YOICHI

IPC: F02G5/00 ,  F02M45/04 ,  F02M47/00 ,  F02M47/02 ,  F02M51/06 ,  F02M57/02 ,  F02M59/10 ,  F02M59/36 ,  F02M59/46 ,  F02M63/00 ,  G03F1/00 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank for obtaining a phase shift mask capable of executing the transfer of fine patterns. SOLUTION: This phase shift mask blank is characterized in that the blank has a light translucent film on a transparent substrate and that the center line average height of the incident and exit face of the light translucent film to exposure light is 0.1 to 50 nmRa. If the center line average height is below 500 nmRa, the difference between the heights of ruggedness is about

公开(公告)号：JPH11184067A

公开(公告)日：1999-07-09

申请号：JP36532597

申请日：1997-12-19

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  TAKEUCHI MEGUMI ,  NOZAWA JUN

IPC: C23C14/06 ,  C23C14/34 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a process for producing a halftone type phase shift mask blank which is capable of exactly and easily controlling the compsn. of an MSi based translucent film (M is a metal or transition metal), is consequently capable of easily obtaining the MSi based translucent film having the desired requirement characteristic of the specific compsn., allows easy deposition, provides the good reproducibility of the deposition and is capable of decreasing the defects in the film. SOLUTION: This halftone type phase shift mask blank is a phase shift mask blank for making a phase shift mask and is constituted by forming the translucent film 2 having a function to give rise to a phase difference of a prescribed quantity to the light transmitted through the translucent film 2 with respect to the light directly transmitted through a transparent substrate 1 on this transparent substrate 1. At this time, the translucent film 2 is formed by using a sputtering target contg. at least one element selected from the metal and the transition metal and at least one compd. selected from the oxide, nitride and oxynitride of these elements.

公开(公告)号：JPH09281689A

公开(公告)日：1997-10-31

申请号：JP11971696

申请日：1996-04-17

Applicant: HOYA CORP

Inventor： OKUBO AKIRA ,  MITSUI HIDEAKI ,  SHIYOUKI TSUTOMU

IPC: G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To make it possible to maintain a sufficiently high relative etching selection ratio and to reduce the film thickness of a mask layer and/or etching stop layer by specifying the material of the etching mask layer (mask layer) and etching stop layer to a mask pattern material layer (X-ray absorber layer) and an etching gas. SOLUTION: The combination of the materials of the X-ray absorber layer 13 and the mask layer 14 and/or the etching stop layer 15 is a combination a material consisting essentially of tantalum(Ta) and a material consisting essentially of chromium(Cr) and these layers are subjected to dry etching using chlorine for the layer consisting essentially of Ta and chlorine and oxygen for the layer consisting essentially of Cr as the etching gas. For example, the etching of Ta4B16 is executed by the gaseous chlorine alone and with this as a mask, the mask layer Cr 14 is etched by using a gaseous mixture composed of the chlorine and oxygen. With these patterns as a mask, the etching of the X-ray absorber layer Ta4 B 13 is executed under the conditions similar to the conditions for the Ta4 B 16. Finally, the etching of the etching stop layer 15 is executed under the conditions similar to the conditions for the mask layer 14.

公开(公告)号：JPH09244218A

公开(公告)日：1997-09-19

申请号：JP3067997

申请日：1997-02-14

Applicant: HOYA CORP

Inventor： MITSUI HIDEAKI ,  MATSUMOTO KENJI ,  YAMAGUCHI YOICHI

IPC: G03F1/32 ,  G03F1/40 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08 ,  G03F1/14

Abstract: PROBLEM TO BE SOLVED: To provide a halftone type halftone phase shift mask blank with which the prevention of electrification by the charge accumulation and static electricity at the time of electron beam plotting is made possible by simple film constitution and a halftone type phase shift mask made therefrom. SOLUTION: This halftone type phase shift mask blank (a) is composed by sputtering a target contg. a transition metal and silicon at a ratio of 30:1 to 1:20 by atomic ratio in an atmosphere contg. oxygen and/or nitrogen and forming a light translucent film 2a consisting of the transition metal, the silicon, and the oxygen and/or nitrogen as the main constituting elements on a transparent substrate 1. This halftone type phase shift mask (b) is composed by forming the mask patterns consisting of light transparent parts 3 and light translucent parts 2 on the light translucent film 2a of the halftone type phase shift mask blank (a).